SEMiX 452GB126HDs
Absolute Maximum Ratings
Symbol Conditions
IGBT
. () *
1
. ')0 *
156
()*- #
'(00
2))
"
30 *
4(0
"
700
"
9 (0
. '() *
'0
=
() *
4?)
"
30 *
(@0
"
700
"
'?00
"
700
"
A 20 ,,, B ')0
*
A 20 ,,, B '()
*
2000
156(+1
Trench IGBT Modules
SEMiX 452GB126HDs
700 : 8 ; (0 :
< '(00 Inverse Diode
1>
. ')0 *
1>56
1>56(+1>
1>6
'0 : ,
SEMiX 452GAL126HDs
Module
SEMiX 452GAR126HDs
156
Preliminary Data
.
. () *
Features
!
Typical Applications
" #
$%
&#
Remarks
# '()* +,
"- ' ,
Characteristics
Symbol Conditions
IGBT
8
8 - 1 '( "
1
8 0 - 0
8 ') ()*- #
E8
#
# 58 ( C
5.A
1
GAL
18G
Units
)
)-3
7-)
0-4
"
'-(
. '() *
0-?
'-'
. ()*
(-4
4-(
C
. '()*
4-@
2-)
C
'-@
(-')
(
(-2)
' 6D
8 A3 ,,, B')
58
( C
max.
'
1
400 "- 8 ') . ()*,
()- 8 0 typ.
. () *
. '()*,
min.
. () *
GB
Units
() *
8
SEMiX®2s
Values
700
1
400"
. '() *
('-)
'-'4
>
>
0-?3
>
(200
(30
7)
4)
740
'40
F
2)
F
0-034
HI&
GAR
19-04-2007 SCH
© by SEMIKRON
SEMiX 452GB126HDs
Characteristics
Symbol Conditions
Inverse Diode
> 1>
400 ": 8 0 >0
>
®
SEMiX 2s
Trench IGBT Modules
1556
E
1>
400 "
#I# 7(00 "I=
8 A') : 700 5.AJ
##
min.
typ.
max.
Units
. () *,
'-7
'-3
. '() *,
'-7
'-3
. () *
'
'-'
. '() *
0-3
0-?
. () *
(
(-4
C
. '() *
(-@
4
C
. '() *
4@)
@)
"
=
44
F
0-')
HI&
Module
K
SEMiX 452GB126HDs
5LBL
SEMiX 452GAL126HDs
,- A
'3
() *
0-@
C
'() *
'
C
0-02)
HI&
SEMiX 452GAR126HDs
5A
#
Preliminary Data
6
M 6)
4
6
67
(-)
Features
!
Typical Applications
" #
$%
&#
Remarks
# '()* +,
GB
2
GAL
)
N
)
N
()0
Temperature sensor
5'00
'00* 5()) MC
0-2?49)O
MC
G'00I'()
55'00+PG'00I'()'IA'I'00Q:
4))09(O
H
PHQ: G
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GAR
19-04-2007 SCH
© by SEMIKRON
SEMiX 452GB126HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
19-04-2007 SCH
© by SEMIKRON
SEMiX 452GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
19-04-2007 SCH
© by SEMIKRON
SEMiX 452GB126HDs
6R (
%
5
8G
%
19-04-2007 SCH
8"K
%
8"5
© by SEMIKRON