SEMIKRON SK100GH128T

SK100GH128T
1 #2 3*" &
Absolute Maximum Ratings
Symbol Conditions
IGBT
0*
4 1 #2 3*
*
4 1 !#2 3*
*9
!#66
0
!#6
+
1 76 3*
86
+
#66
+
#6
0
4 1 !#2 3*
!6
>
1 #2 3*
;7
+
1 76 3*
26
+
!26
+
226
+
*91 # ' * " : !
SEMITOP®4
0** 1 ;66 0< 0( : #6 0<
0* = !#66 0
Inverse Diode
4 1 !26 3*
IGBT module
SK100GH128T
Units
1 #2 3*
0(
Values
9
91 # ' " : !
1 !6 < & %
4 1 !#2 3*
Module
?9@
+
%4
Target Data
0
Features
!"#"$
% &
' () *+, -.
/* Typical Applications
0 +*" ! C
0( 1 0*" * 1 B +
*
0( 1 6 0" 0* 1 0*
0* 1 6 0" 0( 1 #6 0
0*6
*
0*?@
*
*
0( 1 !2 0
9( 1 !2 E
9(&& 1 !2 E
&&
9?4A@
()
0
min.
typ.
max.
B"2
2"2
;"2
0
6"#
+
6"B
Units
+
B66
+
0
4 1 #2 3*
!"!
!"$
4 1 !#2 3*
!
!"#
4 1 #23*
;
E
4 1 !#23*
!!
E
!"F
#"$
0
0
4 1 !#23*%C
#"!
0
& 1 GH
F
6";;
6"B#
!!";
I
8";
I
6"$B
JK-
*
?@
?&&@
&
3*
#266
4 1 !#2 3*
* 1 !66 +" 0( 1 !2 0 4 1 #23*%C
0* 1 " 0( 1 0
AB6 CCC D!#2
4 1 #2 3*
4 1 !#2 3*
(
3*
1 #2 3*" &
Characteristics
Symbol Conditions
IGBT
0(?@
AB6 CCC D!26
0** 1 ;660
*1 !66+
4 1 !#2 3*
GH-T
1
02-07-2007 DIL
© by SEMIKRON
SK100GH128T
Characteristics
Symbol Conditions
Inverse Diode
0 1 0*
®
SEMITOP 4
1 !66 +< 0( 1 6 0
min.
typ.
4 1 #2 3*%C
#
4 1 !#2 3*%C
!"8
max.
Units
0
0
06
4 1 !#2 3*
!
!"#
0
4 1 !#2 3*
!;
##
E
99
L
1 !66 +
4 1 !#2 3*
+
>*
0**1;660
B
9?4A@.
6"7
I
6"82
JK-
Freewheeling Diode
IGBT module
SK100GH128T
0 1 0*
4 1 3*%C
0
06
4 1 3*
0
4 1 3*
0
4 1 3*
+
>*
99
L
1 +< 0( 1 0
1 +
Target Data
Features
!"#"$
% &
' () *+, -.
/* Typical Applications
0 I
JK-
M
$"2
/
;6
BF$N2O
P
Temperature sensor
9!66
1 !663* ?9#212ME@
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GH-T
2
02-07-2007 DIL
© by SEMIKRON
SK100GH128T
UL recognized file
no. E 63 532
* 8B ? " *)" &
Q #@
* 8B
3
(GA
02-07-2007 DIL
© by SEMIKRON