SK 115 MD 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5( + /- .) + /- ,2 .6 1 9 1 6 + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 0 0 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . Inverse diode ® SEMITOP 3 MOSFET Module 5> + ! 5 5>( + ! 5( + /- ,2 .6 9 1 6 + ,2 .6 : Freewheeling CAL diode 5> + ! 5 + . 8 . : SK 115 MD 10 Preliminary Data Features ! " # Typical Applications $ 1) % % &'# ( ' ) ) + ,-. 0 ) 12 8) 1 1 Characteristics Symbol Conditions MOSFET 0A## 03# 5## 53## A# 03# + 2 0) 5 + -)7 8 03# + 0#6 5 + -)7 8 03# + 2 06 0# + 0##6 : + /- . 03# + 4 /20 60# + 2 0 5 + ,2 86 03# + 12 06 : + /- . A# 5 + ,2 86 03# + 12 06 (#>E F 03# + 2 06 0# + /- 06 + 1 (H : ! ;2 <<< = 1//72 . . /-22 ? @222 0 + /- .) min. typ. 122 /)- @)@ + 1/- . max. 122 122 C)- 0 0 B8 8 D 1@)- D > G)1 1), > > 1)7 > $# F 0 + -2 06 03# + 12 06 5 + -2 8 A3 + -7 D A:! Units @22 1-2 1722 172 (#>E 1)1 I?J Inverse diode 0# 5> + -2 86 03# + 2 06 2)G 0 5AA( K F 5> + -2 86 %: + /- .6 A3 + -7 D /; 2)G 8 B 0A + 7- 86 ? + 122 8?B C2 : + -2 . Free-wheeling diode 0> 5> + 86 03# + 0 0 5AA( K F 5> + 86 %: + . 8 B 0 + 86 ? + 8?B Mechanical data (1 L /)/2 #E(5 'N @ M 17 MD 1 02-05-2006 RAM © by SEMIKRON SK 115 MD 10 MOSFET,TRANSISTOR Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage Fig. 7 Gate charge characteristic, IDp = 80 A Fig. 8 Diode forward characteristic, tp = 80 µs 2 02-05-2006 RAM © by SEMIKRON SK 115 MD 10 MOSFET,TRANSISTOR Dimensions in mm #&33E# E $E58(E EA >A E #$EA '5M# 8M E (&M 5M3 '5M# 5M E 'F / 17 ( This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 02-05-2006 RAM © by SEMIKRON