SEMIKRON SK115MD10

SK 115 MD 10 MOSFET,TRANSISTOR
Absolute Maximum Ratings
Symbol Conditions
MOSFET
0##
03##
5
5(
+ /- .) + /- ,2 .6 1
9 1 6 + ,2 .6 1
:
Values
Units
122
4 /2
,2 72
1/2
0
0
8
8
! ;2 <<< = 1-2
.
,2 72
1/2
8
8
! ;2 <<< = 1-2
.
Inverse diode
®
SEMITOP 3
MOSFET Module
5> + ! 5
5>( + ! 5(
+ /- ,2 .6
9 1 6 + ,2 .6
:
Freewheeling CAL diode
5> + ! 5
+ .
8
.
:
SK 115 MD 10
Preliminary Data
Features
! "
# Typical Applications
$ 1)
% %
&'#
( ' )
) + ,-.
0
) 12 8) 1 1
Characteristics
Symbol Conditions
MOSFET
0A##
03#
5##
53##
A#
03# + 2 0) 5 + -)7 8
03# + 0#6 5 + -)7 8
03# + 2 06 0# + 0##6 : + /- .
03# + 4 /20 60# + 2 0
5 + ,2 86 03# + 12 06 : + /- .
A#
5 + ,2 86 03# + 12 06
(#>E
F
03# + 2 06 0# + /- 06 + 1 (H
:
! ;2 <<< = 1//72
.
.
/-22 ? @222
0
+ /- .) min.
typ.
122
/)-
@)@
+ 1/- .
max.
122
122
C)-
0
0
B8
8
D
1@)-
D
>
G)1
1),
>
>
1)7
>
$#
F
0 + -2 06 03# + 12 06
5 + -2 8
A3 + -7 D
A:!
Units
@22
1-2
1722
172
(#>E 1)1
I?J
Inverse diode
0#
5> + -2 86 03# + 2 06
2)G
0
5AA(
K
F
5> + -2 86 %: + /- .6 A3 + -7 D
/;
2)G
8
B
0A + 7- 86 ? + 122 8?B
C2
:
+ -2 .
Free-wheeling diode
0>
5> + 86 03# + 0
0
5AA(
K
F
5> + 86 %: + .
8
B
0 + 86 ? + 8?B
Mechanical data
(1
L
/)/2
#E(5 'N @
M
17
MD
1
02-05-2006 RAM
© by SEMIKRON
SK 115 MD 10 MOSFET,TRANSISTOR
Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C
Fig. 5 Breakdown voltage vs. temperature
Fig. 6 Typ. capacitancies vs. drain-source voltage
Fig. 7 Gate charge characteristic, IDp = 80 A
Fig. 8 Diode forward characteristic, tp = 80 µs
2
02-05-2006 RAM
© by SEMIKRON
SK 115 MD 10 MOSFET,TRANSISTOR
Dimensions in mm
#&33E# E $E58(E EA >A E #$EA '5M# 8M E (&M 5M3 '5M# 5M E 'F / 17
(
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
3
02-05-2006 RAM
© by SEMIKRON