SEMTECH SC2621STRT

SC2621
500kHz Voltage Mode PWM Controller
With Linear Power Regulator
POWER MANAGEMENT
Description
Features
u
u
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The SC2621 provides the control and protection features
necessary for a synchronous buck converter and a linear regulator in high performance graphic card applications.
The SC2621 is designed to directly drive the top and
bottom MOSFETs of the buck converter. It uses an internal 8.2V supply as the gate drive voltage for minimum
driver power loss and MOSFET switching loss. It allows
the converter to operate at 500kHz switching frequency
with 4V to 16V power rail and as low as 0.5V output. The
SC2621 is capable to drive a N-type MOSFET in a linear
regulator with as low as 0.5V output.
500kHz switching frequency
4V to 16V power rails
Internal LDO for optimum gate drive voltage
1.5A gate drive current
Programmable output voltages
Internal soft start
Power rail under voltage lockout
Hiccup mode short circuit protection
SOIC-14 package
Applications
The SC2621 features soft-start, supply power under voltage lockout, and hiccup mode over current protection.
The SC2621 monitors the output current by using the
Rdson of the bottom MOSFET in the buck converter that
eliminates the need for a current sensing resistor. The
SC2621 is offered in a SOIC-14 package.
u Graphics processor power supplies on PCI-Express
platform
u Embedded, low cost, high efficiency converters
u Point of load power supplies
Typical Application Circuit
12V IN
+
3.3V IN
1
2.5V OUT
2
3
4
5
+
6
7
PN
DH
LDOG
NC
LDFB
B ST
OCS
FB
DRV
DL
COMP
GND
NC
V CC
14
1.5V OUT
13
12
1
2
11
10
9
+
8
SC2621
December 17, 2004
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SC2621
POWER MANAGEMENT
Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified
in the Electrical Characteristics section is not implied.
Parameter
Symbol
Maximum
Units
Input Supply Voltage
VCC
18
V
BST to GND
VBST
40
V
BST to PN
VBST_PN
10
V
PN to GND
VPN
-1 to 30
V
VPN_PULSE
-5
V
VDL
-1 to +10
V
VDL_PULSE
-3
V
VDH_PN
-1 to +10
V
VDH_PULSE
-3
V
VDRV
10
V
Operating Ambient Temperature Range
TA
-25 to 85
°C
Operating Junction Temperature
TJ
-25 to 125
°C
Thermal Resistance Junction to Ambient
θJA
100
°C/W
Thermal Resistance Junction to Case
θJC
32
°C/W
Lead Temperature (Soldering) 10s
TLEAD
300
°C
Storage Temperature
TSTG
-65 to 150
°C
PN to GND Negative Pulse (tpulse < 20ns)
DL to GND
DL to GND Negative Pulse (tpulse < 20ns)
DH to PN
DH to PN Negative Pulse (tpulse < 20ns)
DRV to GND
Electrical Characteristics
Unless specified: VCC = 5V to 16V; VFB = VO; VBST - VPN = 5V to 8.2V; TA = -25 to 85°C
Parameter
Symbol
Conditions
Min
Typ
Max
Units
16
V
7
mA
General
VCC Supply Voltage
VCC
VCC Quiescent Current
IQVCC
VCC = 12V, VBST -VPN = 8.2V
5
VCC Under Voltage Lockout
UVVCC
VHYST = 100mV
4
BST to PN Supply Voltage
VBST_PN
BST Quiescent Current
4
4
V
10
V
3
mA
IQBST
VCC = 12V, VBST -VPN = 8.2V
LDO Output
VDRV
8.6V < VCC < 16V
8.2
V
Dropout Voltage
VDROP
4V < VCC < 8.6V
0.4
V
Internal LDO
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SC2621
POWER MANAGEMENT
Electrical Characteristics
Unless specified: VCC = 5V to 16V; VFB = VO; VBST - VPN = 5V to 8.2V; TA = -25 to 85°C
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Reference Voltage
VOL
LDFB = VOL, TA = 25°C, VCC = 12V
0.495
0.500
0.505
V
Gain
AOLL
LDFB to LDOG
Linear Section
(2)
70
dB
Load Regulation
IO = 0 to 1A , VIN = 3.3V, VCC = 12V
0.4
%
Line Regulation
VIN = 3.2V to 3.4V, VCC = 12V
0.4
%
VCC Supply Rejection
VIN = 3.3V, VCC = 10V to 14V
0.4
%
Gate Sourcing Current
VGATE = 6.5V
1
mA
Gate Sinking Current
VGATE = 6.5V
1
mA
LDFB = 0.5V
-0.2
-1.0
uA
0.500
0.505
V
LDFB Input Bias Current
Sw itching Section
Reference Voltage
VREF
TA = 25°C, VCC = 12V
0.495
Load Regulation
IO = 0.2 to 4A
0.4
%
Line Regulation
VCC = 10V to 14V
0.4
%
Operating Frequency
FS
Ramp Amplitude
Vm
0.8
V
DMAX
97
%
(2)
Maximum Duty Cycle
(2)
DH Rising/Falling Time
DL Rising/Falling Time
tSRC_DH
tSINK_DH
tSRC_DL
tSINK_DL
400
6V Swing at CL = 3.3nF
VBST-VPN = 8.2V
6V Swing at CL = 3.3nF
VDRV = 8.2V
DH, DL Nonoverlapping Time
500
41
27
29
42
600
kHz
ns
ns
30
ns
2
mV
Input Offset Current (2)
40
nA
Open Loop Gain
80
dB
Unity Gain Bandwidth (2)
10
MHz
Output Source Current
0.9
mA
Output Sink Current
0.9
mA
1.2
V/us
Voltage Error Amplifier
Input Offset Voltage
Slew Rate
(2)
(2)
(2)
For CL=500pF Load
Notes:
(1) This device is ESD sensitive. Use of standard ESD handling precautions is required.
(2) Guaranteed by design, not tested in production.
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SC2621
POWER MANAGEMENT
Pin Configuration
Ordering Information
Part Numbers
P ackag e
SC2621STRT(1)(2)
SO-14
TOP VIEW
PN
1
14
DH
LDOG
2
13
NC
LDFB
3
12
BST
OCS
4
11
DRV
FB
5
10
DL
COMP
6
9
GND
NC
7
8
VCC
Note:
(1) Only available in tape and reel packaging. A reel
contains 2500 devices.
(2). Lead free product. This product is fully WEEE and
RoHS compliant.
(SO-14)
Pin Descriptions
Pin #
Pin Name
1
PN
2
LDOG
External LDO gate drive. Connect this pin to the external N-MOSFET gate.
3
LD F B
External LDO feed back. Connect this pin to the linear regulator output.
4
OCS
Current limit setting. Connect resistors from this pin to DRV pin and to ground to program
the trip point of load current. Refer to Applications Information Section for details.
5
FB
6
COMP
7
NC
8
VC C
Chip input power supply.
9
GND
Chip ground.
10
DL
11
DRV
Internal LDO output. Connect a 1uF ceramic capasitor from this pin to ground for
decoupling. This voltage is used for chip bias, including gate drivers.
12
BST
Boost input for top gate drive bias.
13
NC
No connection.
14
DH
Gate drive for top MOSFET.
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Pin Function
Phase node. Connect this pin to bottom N-MOSFET drain.
Voltage feed back of sychronous buck converter.
Error amplifier output for compensation.
No connection.
Gate drive for bottom MOSFET.
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SC2621
POWER MANAGEMENT
Block Diagram
8.2V
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SC2621
POWER MANAGEMENT
Applications Information
down both outputs. After waiting for around 10 milliseconds, the SC2621 begins to charge SS capacitor again
and initiates a fresh startup. The startup and shutdown
cycle will repeat until the short circuit is removed. This is
called a hiccup mode short circuit protection.
THEOR
Y OF OPERA
TION
THEORY
OPERATION
The SC2621 integrates a high-speed, voltage mode PWM
controller with a linear controller into a single package. It
is designed to control two independent output voltages
for high performance graphic card applications.
To program a load trip point for short circuit protection, it
is recommended to connect a 3.3k resistor from the OCS
pin to the ground, and a resistor Rset from the OCS pin to
the DRV pin, as shown in Fig. 1.
As shown in the block diagram of the SC2621, the voltage-mode PWM controller consists of an error amplifier,
a 500kHz ramp generator, a PWM comparator, a RS latch
circuit, and two MOSFET drivers. The buck converter output voltage is fed back to the error amplifier negative
input and is regulated to a reference voltage level. The
error amplifier output is compared with the ramp to generate a PWM wave, which is amplified and used to drive
the MOSFETs in the buck converter. The PWM wave at
the phase node with the amplitude of Vin is filtered out
to get a DC output. The linear controller is an error amplifier. It provides the gate drive and output voltage control
for a linear regulator. Both PWM controller and linear controller work with soft-start and fault monitoring circuitry
to meet application requirement.
12V
8
11
V CC
DRV
Rset
4
3.3k
OCS
SC262 1
GND
9
UVLO, Start Up and Shut Down
To initiate the SC2621, a supply voltage is applied to Vcc
pin. The top gate (DH) and bottom gate (DL) are held low
until Vcc voltage exceed UVLO (Under Voltage Lock Out)
threshold, typically 4.0V. Then the internal Soft-Start (SS)
capacitor begins to charge, the top gate remains low,
and the bottom gate is pulled high to turn on the bottom
MOSFET. When the SS voltage at the capacitor reaches
0.4V, the linear controller is enabled and LDO output is
turned on. Meanwhile, the top and bottom gates of PWM
controller begin to switch. The switching regulator output
is slowly ramping up for a soft turn-on.
Fig. 1. Programming load trip point
The resistor Rset can be found in Fig. 2 for a given phase
node voltage Vpn at the load trip point. This voltage is
the product of the inductor peak current at the load trip
point and the Rdson of the low-side MOSFET:
V pn = I peak ´ Rds _ on
If the supply voltages at Vcc pin falls below UVLO threshold during a normal operation, the SS capacitor begins
to discharge. When the SS voltage reaches 0.4V, the
PWM controller controls the switching regulator output
to ramp down slowly for a soft turn-off. Meanwhile, the
linear controller is disabled and LDO output is turned off.
The soft start time of the SC2621 is fixed at around 5ms.
Therefore, the maximum soft start current is determined
by the output inductance and output capacitance. The
values of output inductor and output bulk capacitors have
to be properly selected so that the soft start peak current does not exceed the load trip point of the short circuit protection.
Hiccup Mode Short Circuit Protection
The SC2621 uses low-side MOSFET Rdson sensing for
over current protection. In every switching cycle, after
the bottom MOSFET is on for 150ns, the SC2621 detects the phase node voltage and compares it with an
internal setting voltage. If the phase node is lower than
the setting voltage, an overcurrent condition occurs. The
SC2621 will discharge the internal SS capacitor and shut-
Internal LDO for Gate Drive
An internal LDO is designed in the SC2621 to lower the
12V supply voltage for gate drive. An 1uF external ceramic capacitor connected in between DRV pin to the
ground is needed to support the LDO. The LDO output is
connected to low gate drive internally, and has to
beconnected to high gate drive through an external bootstrap circuit. The LDO output voltage is set at 8.2V.
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SC2621
POWER MANAGEMENT
Applications Information (Cont.)
PS = I O × VIN × t S × f OSC
350
There is no significant switching loss for the bottom
MOSFET because of its zero voltage switching. The conduction losses of the top and bottom MOSFETs are given
by:
325
Vpn (mV)
300
275
250
PC _ TOP = I O2 × Rdson × D
225
200
PC _ BOT = I O2 × Rdson × (1 - D )
175
150
0
100
200
300
400
500
600
If the requirement of total power losses for each MOSFET
is given, the above equations can be used to calculate
the values of Rdson and gate charge can be calculated
using above equations, then the devices can be determined accordingly. The solution should ensure the
MOSFET is within its maximum junction temperature at
highest ambient temperature.
Rset (k -ohm)
Fig. 2. Pull down resistor for current limit setting
The manufacture data and bench tested results show
that, for low Rdson MOSFETs run at applied load current,
the optimum gate drive voltage is around 8.2V, where
the total power losses of power MOSFETs are minimized.
Output Capacitor
The output capacitors should be selected to meet both
output ripple and transient response criteria. The output
capacitor ESR causes output ripple VRIPPLE during the
inductor ripple current flowing in. To meet output ripple
criteria, the ESR value should be:
COMPONENT SELECTION
General design guideline of switching power supplies can
be applied to the component selection for the SC2621.
RESR <
Induct
or and MOSFET
Inductor
MOSFETss
The selection of inductor and MOSFETs should meet thermal requirement because they are power loss dominant
components. Pick an inductor with as high inductance
as possible without adding extra cost and size. The higher
inductance, the lower ripple current, the smaller core loss
and the higher efficiency will be. However, too high inductance slows down output transient response. It is recommended to choose the inductance that gives the inductor ripple current to be approximate 20% of maximum load current. So choose inductor value from:
L=
The output capacitor ESR also causes output voltage transient VT during a transient load current IT flowing in. To
meet output transient criteria, the ESR value should be:
RESR <
VT
IT
To meet both criteria, the smaller one of above two ESRs
is required.
V
5
× VO × (1 - O )
I O × f osc
VIN
The output capacitor value also contributes to load transient response. Based on a worst case where the inductor energy 100% dumps to the output capacitor during
the load transient, the capacitance then can be calculated by:
The MOSFETs are selected from their Rdson, gate charge,
and package. The SC2621 provides 1.5A gate drive current. To drive a 50nC gate charge MOSFET gives 50nC/
1.5A=33ns switching time. The switching time ts contributes to the top MOSFET switching loss:
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L × f OSC × VRIPPLE
V
VO × (1 - O )
VIN
C > L×
7
I T2
VT2
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SC2621
POWER MANAGEMENT
Applications Information (Cont.)
signal model of the buck converter operating at fixed
switching frequency. The transfer function of the model
is given by:
Input Capacitor
The input capacitor should be chosen to handle the RMS
ripple current of a synchronous buck converter. This value
is given by:
VO VIN
1 + sRESRC
=
×
VC Vm 1 + sL / R + s 2 LC
2
I RMS = (1 - D ) × I IN
+ D × ( I o - I IN )2
where VIN is the power rail voltage, Vm is the amplitude
of the 500kHz ramp, and R is the equivalent load.
where Io is the load current, IIN is the input average current, and D is the duty cycle. Choosing low ESR input
capacitors will help maximize ripple rating for a given size.
MOSFET for Linear Regulator
The MOSFET in linear regulator operates in linear region
with really high power loss. A device with a suitable package has to be selected to handle the loss. To prevent too
high load current during short circuit, the Rdson of the
MOSFET should not be selected too low. A good choice is
to select a MOSFET so that it is almost fully turned on at
maximum load current. For example, in a LDO design with
3.3V in and 1.5V/2A out, a MOSFET with 600 to 800mohm Rdson can be chosen.
SC2621 AND MOSFETS
REF
Vc
PWM
MODULAT OR
-
L
Vo
OUT
COMP
Zf
Zs
Bootstrap Circuit
The SC2621 uses an external bootstrap circuit to provide a voltage at BST pin for the top MOSFET drive. This
voltage, referring to the Phase Node, is held up by a
bootstrap capacitor. Typically, it is recommended to use
a 1uF ceramic capacitor with 16V rating and a commonly
available diode IN4148 for the bootstrap circuit.
Co
Resr
Fig. 3. Block diagram of the control loop
The model is a second order system with a finite DC gain,
a complex pole pair at Fo, and an ESR zero at Fz, as
shown in Fig. 4. The locations of the poles and zero are
determined by:
Filters for Supply Power
For each pin of DRV and Vcc, it is recommended to use a
1uF/16V ceramic capacitor for decoupling. In addition,
place a small resistor (10 ohm) in between Vcc pin and
the supply power for noise reduction.
FO =
CONTROL LOOP DESIGN
FZ =
The goal of compensation is to shape the frequency response charateristics of the buck converter to achieve a
better DC accuracy and a faster transient response for
the output voltage, while maintaining the loop stability.
1
LC
1
RESR C
The compensator in Fig. 3 includes an error amplifier and
impedance networks Zf and Zs. It is implemented by the
circuit in Fig. 5. The compensator provides an integrator,
double poles and double zeros. As shown in Fig. 4, the
integrator is used to boost the gain at low frequency.
Two zeros are introduced to compensate excessive phase
lag at the loop gain crossover due to the integrator
(-90deg) and complex pole pair (-180deg). Two high frequency poles are designed to compensate the ESR zero
The block diagram in Fig. 3 represents the control loop
of a buck converter designed with the SC2621. The control loop consists of a compensator, a PWM modulator,
and a LC filter.
The LC filter and PWM modulator represent the small
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SC2621
POWER MANAGEMENT
Applications Information (Cont.)
(1). Plot the converter gain, including LC filter and PWM
modulator.
and attenuate high frequency noise.
(2). Select the open loop crossover frequency Fc located
at 10% to 20% of the switching frequency. At Fc, find the
required DC gain.
60
Fp1
Fp2
COM PENSATOR GAI N
(3). Use the first compensator pole Fp1 to cancel the
ESR zero Fz.
30
GAIN (dB)
Fz1
LO
Fz2
OP
GA
IN
Fo
0
CO
Fz
NV
ER
TE
RG
AI N
(4). Have the second compensator pole Fp2 at half the
switching frequency to attenuate the switching ripple and
high frequency noise.
Fc
-30
(5). Place the first compensator zero Fz1 at or below
50% of the power stage resonant frequency Fo.
-60
100
1K
10K
100 K
1M
(6). Place the second compensator zero Fz2 at or below
the power stage resonant frequency Fo.
FR EQ UENCY (Hz )
A MathCAD program is available upon request for the
calculation of the compensation parameters.
Fig. 4. Bode plots for control loop design
C2
C1
LA
YOUT GUIDELINES
LAY
R2
C3
R3
The switching regulator is a high di/dt power circuit. Its
Printed Circuit Board (PCB) layout is critical. A good layout can achieve an optimum circuit performance while
minimizing the component stress, resulting in better system reliability. During PCB layout, the SC2621 controller,
MOSFETs, inductor, and power decoupling capacitors have
to be considered as a unit.
Vo
1
-
Vc
2
3
+
VREF
Rtop
Rbot
0.5V
The following guidelines are typically recommended for
using the SC2621 controller.
(1). Place a 4.7uF to 10uF ceramic capacitor close to
the drain of top MOSFET for the high frequency and high
current decoupling. The loop formed by the capacitor,
the top and bottom MOSFETs must be as small as possible. Keep the input bulk capacitors close to the drain
of the top MOSFETs.
Fig. 5. Compensation network
The top resistor Rtop of the voltage divider in Fig. 5 can
be chosen from 1k to 5k. Then the bottom resistor Rbot
is found from:
Rbot =
(2). Place the SC2621 over a quiet ground plane to avoid
pulsing current noise. Keep the ground return of the gate
drive short.
0.5V
× Rtop
VO - 0.5V
(3). Connect bypass capacitors as close as possible to
the decoupling pins (DRV and Vcc) to the ground pin GND.
The trace length of the decoupling capasitor on DRV pin
should be no more than 0.2” (5mm).
where 0.5V is the internal reference voltage of the
SC2621.
The other components of the compensator can be calculated using following design procedure:
 2003 Semtech Corp.
(4). Locate the components of the bootstrap circuit close
to the SC2621.
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SC2621
POWER MANAGEMENT
Outline Drawing - SO-14
A
D
e
N
DIM
A
A1
A2
b
c
D
E1
E
e
h
L
L1
N
01
aaa
bbb
ccc
E/2
2X
E1
ccc C 1
2X N/2 TIPS
2
E
3
B
D
DIMENSIONS
INCHES
MILLIMETERS
MIN NOM MAX MIN NOM MAX
.053
.069
.004
.010
.049
.065
.020
.012
.007
.010
.337 .341 .344
.150 .154 .157
.236 BSC
.050 BSC
.010
.020
.016 .028 .041
(.041)
14
0°
8°
.004
.010
.008
1.75
1.35
0.10
0.25
1.25
1.65
0.31
0.51
0.17
0.25
8.55 8.65 8.75
3.80 3.90 4.00
6.00 BSC
1.27 BSC
0.25
0.50
0.40 0.72 1.04
(1.04)
14
0°
8°
0.10
0.25
0.20
aaa C
h
A2 A
SEATING
PLANE
C
bxN
bbb
A1
h
H
C A-B D
c
GAGE
PLANE
0.25
SIDE VIEW
SEE DETAIL
L
(L1)
A
DETAIL
01
A
NOTES:
1.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2.
DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-
3.
DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS
OR GATE BURRS.
4.
REFERENCE JEDEC STD MS-012, VARIATION AB.
Land Pattern - SO-14
X
DIM
(C)
G
C
G
P
X
Y
Z
Z
Y
DIMENSIONS
INCHES
MILLIMETERS
(.205)
.118
.050
.024
.087
.291
(5.20)
3.00
1.27
0.60
2.20
7.40
P
NOTES:
1.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
2.
REFERENCE IPC-SM-782A, RLP NO. 302A.
Contact Information
Semtech Corporation
Power Management Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
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