SPANSION M420000072

Am42BDS6408H
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 30491 Revision A
Amendment +3 Issue Date October 23, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
ADVANCE INFORMATION
Am42BDS6408H
Am29BDS640H 64 Megabit (4 M x 16-Bit)
Stacked MultiChip Package (MCP) Flash Memory and SRAM
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash
Memory, and 8 Mbit (512 K x 16-Bit) SRAM
FLASH DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
PERFORMANCE CHARCTERISTICS
■ Single 1.8 volt read, program and erase (1.65 to 1.95
volt)
■ Manufactured on 0.13 µm process technology
■ VersatileIO™ (VIO) Feature
— Device generates data output voltages and tolerates
data input voltages as determined by the voltage on
the VIO pin
— 1.8V compatible I/O signals
— Contact factory for availability of 1.5V compatible I/O
signals
■
■
Programable Burst Interface
— 2 Modes of Burst Read Operation
— Linear Burst: 8, 16, and 32 words with
wrap-around
— Continuous Sequential Burst
■
■
— Burst access times of 11/13.5 ns at industrial
temperature range
— Synchronous latency of 56/69 ns
— Asynchronous random access times of 45/50/55 ns
■ Power dissipation (typical values, CL = 30 pF)
— Burst Mode Read: 10 mA
— Simultaneous Operation: 25 mA
— Program/Erase: 15 mA
— Standby mode: 0.2 µA
Simultaneous Read/Write operation
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
— Four bank architecture: 8Mb/24Mb/24Mb/8Mb
■
Read access times at 66/54 MHz (CL=30 pF)
SecSiTM (Secured Silicon) Sector region
HARDWARE FEATURES
■ Handshaking feature
— Provides host system with minimum possible latency
by monitoring RDY
— Reduced Wait-state handshaking option further
reduces initial access cycles required for burst
accesses beginning on even addresses
■ Hardware reset input (RESET#)
— Hardware method to reset the device for reading array
data
— Up to 128 words accessible through a command
sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
■ WP# input
— Write protect (WP#) function allows protection of the
four highest and four lowest 4 kWord boot sectors,
regardless of sector protect status
Sector Architecture
■ Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector
— Sectors can be locked and unlocked in-system at VCC
level
— Sixteen 4 Kword sectors and one hundred twenty-six
32 Kword sectors
— Banks A and D each contain eight 4 Kword sectors
and fifteen 32 Kword sectors; Banks B and C each
contain forty-eight 32 Kword sectors
— Sixteen 4 Kword boot sectors: eight at the top of the
address range and eight at the bottom of the address
range
■ Minimum 1 million erase cycle guarantee per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ 89-ball FBGA package
■ Password Sector Protection
— A sophisticated sector protection method to lock
combinations of individual sectors and sector groups
to prevent program or erase operations within that
sector using a user-defined 64-bit password
■ ACC input: Acceleration function reduces
programming time; all sectors locked when ACC =
VIL
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. Do not design in this product without contacting the factory. AMD reserves the right to change or discontinue work on this proposed product without notice.
Publication# 30491
Rev: A Amendment:+3
Issue Date: October 23, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E
I N F O R M A T I O N
■ CMOS compatible inputs, CMOS compatible outputs
■ Low VCC write inhibit
SOFTWARE FEATURES
■ Supports Common Flash Memory Interface (CFI)
■ Software command set compatible with JEDEC 42.4
standards
— Backwards compatible with Am29F and Am29LV
families
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
■ Burst Suspend/Resume
— Suspends a burst operation to allow system use of the
address and data bus, than resumes the burst at the
previous state
SRAM FEATURES
■ Data# Polling and toggle bits
— Provides a software method of detecting program and
erase operation completion
■ Power dissipation
— Operating: 10 mA typical
— Standby: 2 µA
■ Erase Suspend/Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
■
■
■
■
2
CE1s# and CE2 Chip Select
Power down features using CE1s# and CE2s
Data retention supply voltage: 1.0 to 2.2 volt
Byte data control: LB# (DQ7-DQ0), UB#s (DQ15-DQ8)
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
GENERAL DESCRIPTION
The Am29BDS640H is a 64 Mbit, 1.8 Volt-only, simultaneous
Read/Write, Burst Mode Flash memory device, organized as
4,194,304 words of 16 bits each. This device uses a single
VCC of 1.65 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VHH on ACC may be used for faster
program performance if desired.
At 66 MHz, the device provides a burst access of 11 ns at 30
pF with a latency of 56 ns at 30 pF.At 54 MHz, the device
provides a burst access of 13.5 ns at 30 pF with a latency of
69ns at 30 pF. The device operates within the industrial temperature range of -40°C to +85°C. The device is offered in
the 64-ball FBGA package.
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four
banks. The device can improve overall system performance
by allowing a host system to program or erase in one bank,
then immediately and simultaneously read from another
bank, with zero latency. This releases the system from waiting for the completion of program or erase operations.
The device is divided as shown in the following table:
Bank
Quantity
Size
8
4 Kwords
15
32 Kwords
B
48
32 Kwords
C
48
32 Kwords
15
32 Kwords
8
4 Kwords
A
D
The VersatileIO™ (VIO) control allows the host system to set
the voltage levels that the device generates at its data outputs and the voltages tolerated at its data inputs to the same
voltage level that is asserted on the VIO pin.
The device uses Chip Enable (CE#), Write Enable (WE#),
Address Valid (AVD#) and Output Enable (OE#) to control
asynchronous read and write operations. For burst operations, the device additionally requires Ready (RDY), and
Clock (CLK). This implementation allows easy interface with
minimal glue logic to a wide range of microprocessors/microcontrollers for high performance read operations.
dresses and data needed for the programming and erase
operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
The Erase Suspend/Erase Resume feature enables the
user to put erase on hold for any period of time to read data
from, or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved. If a
read is needed from the SecSi Sector area (One Time Program area) after an erase suspend, then the user must use
the proper command sequence to enter and exit this region.
The hardware RESET# pin terminates any operation in
progress and resets the internal state machine to reading
array data. The RESET# pin may be tied to the system reset
circuitry. A system reset would thus also reset the device,
enabling the system microprocessor to read boot-up firmware from the Flash memory device.
The host system can detect whether a program or erase operation is complete by using the device status bit DQ7
(Data# Polling) and DQ6/DQ2 (toggle bits). After a program
or erase cycle has been completed, the device automatically
returns to reading array data.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when
shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during
power transitions. The device also offers two types of data
protection at the sector level. When at VIL , WP# locks the
four highest and four lowest boot sectors.
The device offers two power-saving features. When addresses have been stable for a specified amount of time, the
device enters the automatic sleep mode. The system can
also place the device into the standby mode. Power consumption is greatly reduced in both modes.
AMD’s Flash technology combines years of Flash memory
manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunnelling. The data is programmed using
hot electron injection.
The burst read mode feature gives system designers flexibility in the interface to the device. The user can preset the
burst length and wrap through the same memory space, or
read the flash array in continuous mode.
The clock polarity feature provides system designers a
choice of active clock edges, either rising or falling. The active clock edge initiates burst accesses and determines
when data will be output.
The device is entirely command set compatible with the
JEDEC 42.4 single-power-supply Flash standard. Commands are written to the command register using standard
microprocessor write timing. Register contents serve as inputs to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch ad-
October 23, 2003
Am42BDS6408H
3
A D V A N C E
I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 6
Flash Memory Block Diagram. . . . . . . . . . . . . . . . 7
Block Diagram of Simultaneous
Operation Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . . 9
Special Handling Instructions for FBGA Package ..........................9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . 11
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 12
Table 1. Device Bus Operations ..........................................................12
VersatileIO™ (VIO) Control .......................................................... 12
Requirements for Asynchronous Read
Operation (Non-Burst) ..................................................................12
Requirements for Synchronous (Burst) Read Operation ............. 12
8-, 16-, and 32-Word Linear Burst with Wrap Around .................. 13
Table 2. Burst Address Groups .............................................................13
Burst Suspend/Resume ............................................................... 13
Configuration Register ................................................................. 14
Reduced Wait-state Handshaking Option ....................................14
Simultaneous Read/Write Operations with Zero Latency ............ 14
Writing Commands/Command Sequences .................................. 14
Accelerated Program Operation ...................................................15
Table 3. Am42BDS6408H Boot Sector/Sector Block Addresses for Protection/Unprotection ...................................................................................16
Sector/Sector Block Protection and Unprotection ........................16
Sector Protection ..........................................................................16
Selecting a Sector Protection Mode .............................................16
Persistent Sector Protection ......................................................... 17
Persistent Protection Bit (PPB) ....................................................17
Persistent Protection Bit Lock (PPB Lock) ................................... 17
Dynamic Protection Bit (DYB) ......................................................17
Table 4. Sector Protection Schemes .....................................................18
Persistent Sector Protection Mode Locking Bit ............................ 18
Password Protection Mode .......................................................... 18
Password and Password Mode Locking Bit ................................. 19
64-bit Password ...........................................................................19
Persistent Protection Bit Lock ......................................................19
High Voltage Sector Protection ....................................................19
Standby Mode .............................................................................. 19
Automatic Sleep Mode ................................................................. 20
RESET#: Hardware Reset Input .................................................. 20
Output Disable Mode ...................................................................20
Figure 1. Temporary Sector Unprotect Operation................................. 20
Figure 2. In-System Sector Protection/
Sector Unprotection Algorithms ............................................................ 21
SecSi™ (Secured Silicon) Sector
Flash Memory Region ..................................................................22
Factory-Locked Area (64 words) .................................................. 22
TM
Table 5. SecSi
Sector Addresses .....................................................22
Customer-Lockable Area (64 words) ........................................... 22
SecSi Sector Protection Bits ........................................................ 22
Hardware Data Protection ............................................................22
Write Protect (WP#) .....................................................................23
Low VCC Write Inhibit ...................................................................23
Write Pulse “Glitch” Protection .....................................................23
Logical Inhibit ............................................................................... 23
Power-Up Write Inhibit ................................................................. 23
Table 6. CFI Query Identification String ................................................23
Table 7. System Interface String........................................................... 24
Table 8. Device Geometry Definition .................................................... 24
Table 9. Primary Vendor-Specific Extended Query ..............................25
4
Table 10. Sector Address Table ........................................................... 26
Command Definitions . . . . . . . . . . . . . . . . . . . . . 30
Reading Array Data ...................................................................... 30
Set Configuration Register Command Sequence ........................ 30
Figure 3. Synchronous/Asynchronous State Diagram.......................... 30
Read Mode Setting ...................................................................... 30
Programmable Wait State Configuration ...................................... 30
Table 11. Programmable Wait State Settings ....................................... 31
Reduced Wait-state Handshaking Option .................................... 31
Table 12. Wait States for Reduced wait-state Handshaking ............... 32
Standard Handshaking Option ..................................................... 32
Table 13. Wait States for Standard Handshaking ................................. 32
Read Mode Configuration ............................................................ 32
Table 14. Read Mode Settings ............................................................. 33
Burst Active Clock Edge Configuration ........................................ 33
RDY Configuration ....................................................................... 33
Table 15. Configuration Register .......................................................... 33
Reset Command .......................................................................... 33
Autoselect Command Sequence .................................................. 34
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence ................................................................... 34
Program Command Sequence ..................................................... 34
Unlock Bypass Command Sequence ........................................... 35
Figure 4. Program Operation ................................................................ 35
Chip Erase Command Sequence ................................................. 35
Sector Erase Command Sequence .............................................. 36
Erase Suspend/Erase Resume Commands ................................ 36
Figure 5. Erase Operation .................................................................... 37
Password Program Command ..................................................... 37
Password Verify Command .......................................................... 37
Password Protection Mode Locking Bit Program Command ....... 37
Persistent Sector Protection Mode Locking Bit Program Command
38
SecSi Sector Protection Bit Program Command .......................... 38
PPB Lock Bit Set Command ........................................................ 38
DYB Write Command ................................................................... 38
Password Unlock Command ........................................................ 38
PPB Program Command .............................................................. 38
All PPB Erase Command ............................................................. 39
DYB Write Command ................................................................... 39
PPB Status Command ................................................................. 39
PPB Lock Bit Status Command ................................................... 39
DYB Status Command ................................................................. 39
Command Definitions ................................................................... 40
Table 16. Command Definitions .......................................................... 40
Write Operation Status . . . . . . . . . . . . . . . . . . . . 43
DQ7: Data# Polling ...................................................................... 43
Figure 6. Data# Polling Algorithm ......................................................... 43
DQ6: Toggle Bit I .......................................................................... 44
Figure 7. Toggle Bit Algorithm .............................................................. 45
..................................................................................................... 45
DQ2: Toggle Bit II ......................................................................... 45
Table 17. DQ6 and DQ2 Indications ..................................................... 46
Reading Toggle Bits DQ6/DQ2 .................................................... 46
DQ5: Exceeded Timing Limits ...................................................... 46
DQ3: Sector Erase Timer ............................................................. 46
Table 18. Write Operation Status ......................................................... 47
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 48
Figure 8. Maximum Negative Overshoot Waveform............................. 48
Figure 9. Maximum Positive Overshoot Waveform .............................. 48
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 48
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 49
CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . 49
SRAM DC and Operating Characteristics . . . . . . 50
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 10. Test Setup............................................................................ 51
Table 19. Test Specifications ................................................................51
Key to Switching Waveforms . . . . . . . . . . . . . . . 51
Switching Waveforms . . . . . . . . . . . . . . . . . . . . . 51
Figure 11. Input Waveforms and Measurement Levels ........................ 51
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 52
VCC Power-up .............................................................................. 52
Figure 12. VCC Power-up Diagram ....................................................... 52
Synchronous/Burst Read (VIO = 1.8 V) ........................................ 53
Figure 13. CLK Synchronous Burst Mode Read (rising active CLK)..... 54
Figure 14. CLK Synchronous Burst Mode Read (Falling Active Clock) 54
Figure 15. Synchronous Burst Mode Read ........................................... 55
Figure 16. 8-word Linear Burst with Wrap Around ................................ 55
Figure 17. Linear Burst with RDY Set One Cycle Before Data ............. 56
Figure 18. Reduced Wait-state Handshake Burst Suspend/Resume at an
even address......................................................................................... 57
Figure 19. Reduced Wait-state Handshake Burst Suspend/Resume at an
odd address .......................................................................................... 57
Figure 20. Reduced Wait-state Handshake Burst Suspend/Resume at address 3Eh (or offset from 3Eh) .............................................................. 58
Figure 21. Reduced Wait-state Handshake Burst Suspend/Resume at address 3Fh (or offset from 3Fh by a multiple of 64) ................................ 58
Figure 22. Standard Handshake Burst Suspend prior to Initial Access 59
Figure 23. Standard Handshake Burst Suspend at or after Inital Access ..
59
Figure 24. Standard Handshake Burst Suspend at address 3Fh (starting
address 3Dh or earlier) ......................................................................... 60
Figure 25. Standard Handshake Burst Suspend at address 3Eh/3Fh (without a valid Initial Access)....................................................................... 60
Figure 26. Standard Handshake Burst Suspend at address 3Eh/3Fh (with
1 Access CLK) ...................................................................................... 61
Figure 27. Read Cycle for Continuous Suspend................................... 61
Asynchronous Mode Read (VIO = 1.8 V) ......................................62
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 28. Asynchronous Mode Read with Latched Addresses ........... 63
Figure 29. Asynchronous Mode Read................................................... 63
October 23, 2003
Figure 30. Reset Timings...................................................................... 64
Erase/Program Operations (VIO = 1.8 V) ..................................... 65
Figure 31. Asynchronous Program Operation Timings: AVD# Latched Addresses ................................................................................................. 66
Figure 32. Asynchronous Program Operation Timings: WE# Latched Addresses ................................................................................................. 67
Figure 33. Synchronous Program Operation Timings: WE# Latched Addresses ................................................................................................. 68
Figure 34. Synchronous Program Operation Timings: CLK Latched Addresses ................................................................................................. 69
Figure 35. Chip/Sector Erase Command Sequence............................. 70
Figure 36. Accelerated Unlock Bypass Programming Timing .............. 71
Figure 37. Data# Polling Timings (During Embedded Algorithm) ......... 72
Figure 38. Toggle Bit Timings (During Embedded Algorithm) .............. 72
Figure 39. Synchronous Data Polling Timings/Toggle Bit Timings....... 73
Figure 40. DQ2 vs. DQ6 ....................................................................... 73
Temporary Sector Unprotect ........................................................ 74
Figure 41. Temporary Sector Unprotect Timing Diagram.....................
Figure 42. Sector/Sector Block Protect and
Unprotect Timing Diagram....................................................................
Figure 43. Latency with Boundary Crossing .........................................
Figure 44. Latency with Boundary Crossing
into Program/Erase Bank......................................................................
Figure 45. Example of Wait States Insertion ........................................
Figure 46. Back-to-Back Read/Write Cycle Timings.............................
74
75
76
77
78
79
SRAM AC Characteristics . . . . . . . . . . . . . . . . . . 80
Read Cycle ................................................................................... 80
Figure 47. SRAM Read Cycle—Address Controlled ............................ 80
Figure 48. SRAM Read Cycle............................................................... 81
Write Cycle ................................................................................... 82
Figure 49. SRAM Write Cycle—WE# Control....................................... 82
Figure 50. SRAM Write Cycle—CE1#s Control.................................... 83
Figure 51. SRAM Write Cycle—UB#s and LB#s Control...................... 84
Erase and Programming Performance . . . . . . .
BGA Ball Capacitance . . . . . . . . . . . . . . . . . . . . .
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . .
85
85
85
86
TLB 089—89-ball Fine-Pitch Ball Grid Array (FBGA) 10 x
8 mm Package ............................................................................. 86
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 87
Am42BDS6408H
5
A D V A N C E
I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Part Number
Am42BDS6408H
Burst Frequency
66 MHz
VCC, VIO = 1.65 – 1.95 V
Speed Option
Max Initial Synchronous Access Time, ns (TIACC)
Reduced Wait-state Handshaking; Even Address
FLASH
Max Initial Synchronous Access Time, ns (TIACC)
Reduced Wait-state Handshaking; Odd Address; or Standard Handshaking
54 MHz
E8, E9 E3, E4 D8, D9 D3, D4
56
56
69
69
71
71
87.5
87.5
Max Burst Access Time, ns (TBACC)
11
Max Asynchronous Access Time, ns (TACC)
50
13.5
50
55
55
Max CE# Access Time, ns (TCE)
SRAM
Max OE# Access Time, ns (TOE)
11
13.5
Max Access time, ns (tACC)
70
55
70
55
Max CE# Access time, ns (tCE)
70
55
70
55
Max OE# Access, ns (tOE)
35
25
35
25
Note: Speed Options ending in “8” and “6” indicate the “reduced wait-state handshaking” option, which speeds initial
synchronous accesses for even addresses.
Speed Options ending in “9” and “7” indicate the “standard handshaking” option.
See the AC Characteristics section of this datasheet for full specifications.
6
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
FLASH MEMORY BLOCK DIAGRAM
VCC
VSS
VSSIO
VIO
DQ15–DQ0
RDY
Buffer
RDY
Erase Voltage
Generator
Input/Output
Buffers
WE#
WP#
ACC
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC
Detector
AVD#
CLK
Burst
State
Control
Timer
Burst
Address
Counter
Address Latch
RESET#
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A21–A0
October 23, 2003
Am42BDS6408H
7
A D V A N C E
I N F O R M A T I O N
BLOCK DIAGRAM OF SIMULTANEOUS
OPERATION CIRCUIT
VCC
Y-Decoder
Bank A Address
Bank A
Latches and
Control Logic
VSS
VIO
DQ15–DQ0
A21–A0
X-Decoder
OE#
WP#
ACC
RESET#
WE#
CE#
AVD#
RDY
Bank B
Latches and
Control Logic
Y-Decoder
Bank B Address
DQ15–DQ0
X-Decoder
A21–A0
STATE
CONTROL
&
COMMAND
REGISTER
DQ15–DQ0
Status
Control
A21–A0
DQ15–DQ0
Bank C
Latches and
Control Logic
Bank C Address
A21–A0
Y-Decoder
X-Decoder
DQ15–DQ0
A21–A0
8
Bank D
Am42BDS6408H
Latches and
Control Logic
Bank D Address
Y-Decoder
X-Decoder
DQ15–DQ0
October 23, 2003
A D V A N C E
I N F O R M A T I O N
CONNECTION DIAGRAM
89-ball Fine-Pitch Ball Grid Array
(Top View, Balls Facing Down)
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
NC
NC
NC
NC
ADV#
VSS
CLK
NC
NC
NC
B1
B2
B3
B4
B5
B6
B7
B8
B9
NC
NC
WP#
A7
LB#
ACC
WE#
A8
A11
C2
C3
C4
C5
C6
C7
C8
C9
A12
A15
UB#
RESET#
CE2s
A19
SRAM Only
A3
A6
D2
D3
D4
D5
D6
D7
D8
D9
A2
A5
A18
RDY
A20
A9
A13
A21
E1
E2
E3
E4
E5
E6
E7
E8
E9
E10
NC
A1
A4
A17
NC
NC
A10
A14
NC
NC
F1
F2
F3
F4
F5
F6
F7
F8
F9
F10
NC
A0
VSS
DQ1
NC
NC
DQ6
NC
A16
NC
K1
NC
G2
G3
G4
G5
G6
G7
G8
G9
CE#f
OE#
DQ9
DQ3
DQ4
DQ13
DQ15
NC
H2
H3
H4
H5
H6
H7
H8
H9
CE1#s
DQ0
DQ10
VCCf
VCCs
DQ12
DQ7
VSS
J2
J3
J4
J5
J6
J7
J8
J9
NC
DQ8
DQ2
DQ11
NC
DQ5
DQ14
NC
K2
K3
K4
K5
K6
K7
K8
K9
K10
NC
NC
NC
NC
NC
VSS
VIOf
NC
Special Handling Instructions for FBGA
Package
Special handling is required for Flash Memory products
in FBGA packages.
October 23, 2003
NC
Flash Only
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compromised if the package body is exposed to temperatures
above 150°C for prolonged periods of time.
Am42BDS6408H
9
A D V A N C E
I N F O R M A T I O N
PIN DESCRIPTION
High = device ignores address inputs
A18–A0
= 19 Address Inputs (Common)
A21–A19
= 3 Address Inputs (Flash)
DQ15–DQ0
= 16 Data Inputs/Outputs (Common)
CE#f
= Chip Enable (Flash)
CE1#s
= Chip Enable 1 (SRAM)
CE2s
= Chip Enable 2 (SRAM)
OE#
= Output Enable (Common)
WE#
= Write Enable (Common)
UB#s
= Upper Byte Control (SRAM)
LB#s
= Lower Byte Control (SRAM)
RESET#
= Hardware Reset Pin, Active Low
VCCf
= Flash 1.8 volt-only single power
supply (see Product Selector Guide
for speed options and voltage supply
tolerances)
= Input & Output Buffer Power Supply
must be tied to VCC.
VCCs
= SRAM Power Supply
VSSIOf
= Output Buffer Ground
VSS
= Device Ground (Common)
NC
= Pin Not Connected Internally
RDY
= Ready output; indicates the status of
the Burst read. Low = data not valid
at expected time. High = data valid.
AVD#
= Hardware write protect input. At VIL,
disables program and erase functions in the two outermost sectors.
Should be at VIH for all other conditions.
ACC
= At VID, accelerates programming;
automatically places device in unlock bypass mode. At VIL, locks all
sectors. Should be at VIH for all
other conditions.
LOGIC SYMBOL
VIOf
CLK
WP#
19
A18–A0
A21–A19
CE#f
CE1#s
16
DQ15–DQ0
CE2s
OE#
WE#
= CLK is not required in asynchronous
mode. In burst mode, after the initial
word is output, subsequent active
edges of CLK increment the internal
address counter.
= Address Valid input. Indicates to device that the valid address is present
on the address inputs (A21–A0).
RDY
WP#
RESET#
UB#s
LB#s
ACC
AVD#
CLK
Low = for asynchronous mode, indicates valid address; for burst mode,
causes starting address to be
latched.
10
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am42BDS6408
H
D
8
I
T
Tape and Reel
T
S
=
=
7 Inches
13 Inches
TEMPERATURE RANGE
I
=
Industrial (–40°C to +85°C)
HANDSHAKING OPTIONS + SRAM speed
8
=
9
3
=
=
4
=
Reduced wait-state handshaking
Enabled + 70 ns SRAM
Standard handshaking + 70 ns SRAM
Reduced Wait-state handshaking
Enabled + 55 ns SRAM
Standard handshaking + 55 ns SRAM
SPEED
E
D
=
=
66 MHz
54 MHz
PROCESS TECHNOLOGY
H
=
0.13 um
DEVICE NUMBER/DESCRIPTION
Am42BDS6408H
64 Megabit (4 M x 16-Bit) CMOS Flash Memory, Simultaneous Read/Write,
Burst Mode Flash Memory, 1.8 Volt-only Read, Program, and Erase
8 Mb (512 K x 16-bit) SRAM
WP# at VIL level protects top and bottom sectors
Valid Combinations
Valid Combinations
Package
Marking
Order Number
Flash
Burst
Frequency
(MHz)
SRAM
Speed
(ns)
Valid Combinations list configurations planned to be supported in
volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on
newly released combinations.
70
Note: For the Am29BDS640H, the last digit of the speed
grade specifies the VIO range of the device. Speed options
ending in “8” and “9” (e.g., D8, D9) indicate a 1.8 Volt VIO
range.
M420000070
Am42BDS6408HE8
66
Am42BDS6408HE9
M420000071
Am42BDS6408HD8
M420000072
Am42BDS6408HD9
M420000073
54
I
Am42BDS6408HE3
M420000074
Am42BDS6408HE4
M420000075
Am42BDS6408HD3
M420000076
Am42BDS6408HD4
M420000077
66
55
54
October 23, 2003
Am42BDS6408H
11
A D V A N C E
I N F O R M A T I O N
DEVICE BUS OPERATIONS
the register serve as inputs to the internal state
machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the
resulting output. The following subsections describe
each of these operations in further detail.
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register
itself does not occupy any addressable memory location. The register is composed of latches that store the
commands, along with the address and data information needed to execute the command. The contents of
Table 1.
Device Bus Operations
CE#
OE#
WE#
A21–0
DQ15–0
RESET#
CLK
(See
Note)
Asynchronous Read - Addresses Latched
L
L
H
Addr In
I/O
H
X
Asynchronous Read - Addresses Steady State
L
L
H
Addr In
I/O
H
X
L
Asynchronous Write
L
H
L
Addr In
I/O
H
X
L
Synchronous Write
L
H
L
Addr In
I/O
H
Standby (CE#)
H
X
X
HIGH Z
HIGH Z
H
X
X
Hardware Reset
X
X
X
HIGH Z
HIGH Z
L
X
X
Load Starting Burst Address
L
X
H
Addr In
X
H
Advance Burst to next address with appropriate
Data presented on the Data Bus
L
L
H
HIGH Z
Burst
Data Out
H
H
Terminate current Burst read cycle
H
X
H
HIGH Z
HIGH Z
H
X
Terminate current Burst read cycle via RESET#
X
X
H
HIGH Z
HIGH Z
L
Terminate current Burst read cycle and start
new Burst read cycle
L
X
H
HIGH Z
I/O
H
Operation
AVD#
Burst Read Operations
X
X
Legend: L = Logic 0, H = Logic 1, X = Don’t Care, S = Stable Logic 0 or 1 but no transitions.
Note: Default active edge of CLK is the rising edge.
VersatileIO™ (VIO) Control
VersatileIOTM
The
(VIO) control allows the host system
to set the voltage levels that the device generates at its
data outputs and the voltages tolerated at its data
inputs to the same voltage level that is asserted on the
VIO pin.
Requirements for Asynchronous Read
Operation (Non-Burst)
To read data from the memory array, the system must
first assert a valid address on A21–A0, while driving
AVD# and CE# to VIL. WE# should remain at VIH. The
rising edge of AVD# latches the address. The data will
appear on DQ15–DQ0. Since the memory array is
divided into four banks, each bank remains enabled for
read access until the command register contents are
altered.
12
Address access time (tACC) is equal to the delay from
stable addresses to valid output data. The chip enable
access time (t C E ) is the delay from the stable
addresses and stable CE# to valid data at the outputs.
The output enable access time (tOE) is the delay from
the falling edge of OE# to valid data at the output.
The internal state machine is set for reading array data
in asynchronous mode upon device power-up, or after
a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power
transition.
Requirements for Synchronous (Burst)
Read Operation
The device is capable of continuous sequential burst
operation and linear burst operation of a preset length.
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
When the device first powers up, it is enabled for asynchronous read operation.
Prior to entering burst mode, the system should determine how many wait states are desired for the initial
word (tIACC) of each burst access, what mode of burst
operation is desired, which edge of the clock will be the
active clock edge, and how the RDY signal will transition with valid data. The system would then write the
configuration register command sequence. See “Set
Configuration Register Command Sequence” section
on page 30 and “Command Definitions” section on
page 30 for further details.
If the clock frequency is less than 6 MHz during a burst
mode operation, additional latencies will occur. RDY
indicates the length of the latency by pulsing low.
8-, 16-, and 32-Word Linear Burst with Wrap Around
The remaining three modes are of the linear wrap
around design, in which a fixed number of words are
read from consecutive addresses. In each of these
modes, the burst addresses read are determined by
the group within which the starting address falls. The
groups are sized according to the number of words
read in a single burst sequence for a given mode (see
Table 2.)
Once the system has written the “Set Configuration
Register” command sequence, the device is enabled
for synchronous reads only.
The initial word is output tIACC after the active edge of
the first CLK cycle. Subsequent words are output tBACC
after the active edge of each successive clock cycle,
which automatically increments the internal address
counter. Note that the device has a fixed internal
address boundary that occurs every 64 words, starting
at address 00003Fh. During the time the device is outputting data at this fixed internal address boundary
(address 00003Fh, 00007Fh, 0000BFh, etc.), a two
cycle latency occurs before data appears for the next
address (address 000040h, 000080h, 0000C0h, etc.).
The RDY output indicates this condition to the system
by pulsing low. For standard handshaking devices,
there is no two cycle latency between 3Fh and 40h (or
offset from these values by a multiple of 64) if the
latched address was 3Eh or 3Fh (or offset from these
values by a multiple of 64). See Figure 43, “Latency
with Boundary Crossing,” on page 76.
For reduced wait-state handshaking devices, if the
address latched is 3Eh or 3Fh (or offset from these
values by a multiple of 64) two additional cycle latency
occurs prior to the initial access and the two cycle
latency between 3Fh and 40h (or offset from these
values by a multiple of 64) will not occur.
The device will continue to output sequential burst
data, wrapping around to address 000000h after it
reaches the highest addressable memory location,
until the system drives CE# high, RESET# low, or
AVD# low in conjunction with a new address. See
Table 1, “Device Bus Operations,” on page 12.
If the host system crosses the bank boundary while
reading in burst mode, and the device is not programming or erasing, a two-cycle latency will occur as
described above in the subsequent bank. If the host
system crosses the bank boundary while the device is
programming or erasing, the device will provide read
status information. The clock will be ignored. After the
host has completed status reads, or the device has
completed the program or erase operation, the host
can restart a burst operation using a new address and
AVD# pulse.
October 23, 2003
Table 2.
Mode
Burst Address Groups
Group Size Group Address Ranges
8-word
8 words
0-7h, 8-Fh, 10-17h,...
16-word
16 words
0-Fh, 10-1Fh, 20-2Fh,...
32-word
32 words
00-1Fh, 20-3Fh, 40-5Fh,...
As an example: if the starting address in the 8-word
mode is 39h, the address range to be read would be
38- 3F h, and the burs t s equenc e would be
39-3A-3B-3C-3D-3E-3F-38h-etc. The burst sequence
begins with the starting address written to the device,
but wraps back to the first address in the selected
group. In a similar fashion, the 16-word and 32-word
Linear Wrap modes begin their burst sequence on the
starting address written to the device, and then wrap
back to the first address in the selected address group.
Note that in these three burst read modes the
address pointer does not cross the boundary that
occurs every 64 words; thus, no wait states are
inserted (except during the initial access).
The RDY pin indicates when data is valid on the bus.
The devices can wrap through a maximum of 128
words of data (8 words up to 16 times, 16 words up to
8 times, or 32 words up to 4 times) before requiring a
new synchronous access (latching of a new address).
Burst Suspend/Resume
The Burst Suspend/Resume feature allows the system
to temporarily suspend a synchronous burst operation
during the initial access (before data is available) or
after the device is outputting data. When the burst
operation is suspended, any previously latched internal
data and the current state are retained.
Burst Suspend requires CE# to be asserted, WE#
de-asserted, and the initial address latched by AVD# or
the CLK edge. Burst Suspend occurs when OE# is
de-asserted. See Figure 18, “Reduced Wait-state
Handshake Burst Suspend/Resume at an even
address,” on page 57, Figure 19, “Reduced Wait-state
Handshake Burst Suspend/Resume at an odd
address,” on page 57, Figure 20, “Reduced Wait-state
Am42BDS6408H
13
A D V A N C E
I N F O R M A T I O N
Handshake Burst Suspend/Resume at address 3Eh (or
offset from 3Eh),” on page 58, Figure 21, “Reduced
Wait-state Handshake Burst Suspend/Resume at
address 3Fh (or offset from 3Fh by a multiple of 64),” on
page 58, Figure 22, “Standard Handshake Burst
Suspend prior to Initial Access,” on page 59, Figure 23,
“Standard Handshake Burst Suspend at or after Inital
Access,” on page 59, Figure 24, “Standard Handshake
Burst Suspend at address 3Fh (starting address 3Dh
or earlier),” on page 60, Figure 25, “Standard Handshake Burst Suspend at address 3Eh/3Fh (without a
valid Initial Access),” on page 60, and Figure 26, “Standard Handshake Burst Suspend at address 3Eh/3Fh
(with 1 Access CLK),” on page 61.
Burst plus Burst Suspend should not last longer than
tRCC without re-latching an address or crossing an
address boundary. To resume the burst access, OE#
must be re-asserted. The next active CLK edge will
resume the burst sequence where it had been suspended. See, Figure 27, “Read Cycle for Continuous
Suspend,” on page 61.
The RDY pin is only controlled by CE#. RDY will remain
active and is not placed into a high-impedance state
when OE# is de-asserted.
Configuration Register
The device uses a configuration register to set the
various burst parameters: number of wait states, burst
read mode, active clock edge, RDY configuration, and
synchronous mode active.
Reduced Wait-state Handshaking Option
The device can be equipped with a reduced wait-state
handshaking feature that allows the host system to
simply monitor the RDY signal from the device to determine when the initial word of burst data is ready to be
read. The host system should use the programmable
wait state configuration to set the number of wait states
for optimal burst mode operation. The initial word of
burst data is indicated by the rising edge of RDY after
OE# goes low.
The presence of the reduced wait-state handshaking
feature may be verified by writing the autoselect
command sequence to the device. See “Autoselect
Command Sequence” for details.
For optimal burst mode performance on devices
without the reduced wait-state handshaking option, the
host system must set the appropriate number of wait
states in the flash device depending on clock frequency
and the presence of a boundary crossing. See “Set
Configuration Register Command Sequence” section
on page 30 section for more information. The device
will automatically delay RDY and data by one additional
clock cycle when the starting address is odd.
14
The autoselect function allows the host system to
determine whether the flash device is enabled for
reduced wait-state handshaking. See the “Autoselect
Command Sequence” section for more information.
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank of
memory while programming or erasing in another bank
of memory. An erase operation may also be suspended
to read from or program to another location within the
sa me bank (except the sector being erased).
Figure 46, “Back-to-Back Read/Write Cycle Timings,”
on page 79 shows how read and write cycles may be
initiated for simultaneous operation with zero latency.
Refer to the DC Character i sti cs tabl e for
read-while-program and read-while-erase current
specifications.
Writing Commands/Command Sequences
The device has the capability of performing an asynchronous or synchronous write operation. While the
device is configured in Asynchronous read it is able to
perform Asynchronous write operations only. CLK is
ignored in the Asynchronous programming mode.
When in the Synchronous read mode configuration, the
device is able to perform both Asynchronous and Synchronous write operations. CLK and WE# address
latch is supported in the Synchronous programming
mode. During a synchronous write operation, to write a
command or command sequence (which includes programming data to the device and erasing sectors of
memory), the system must drive AVD# and CE# to VIL,
and OE# to V IH when providing an address to the
device, and drive WE# and CE# to VIL, and OE# to VIH
when writing commands or data. During an asynchronous write operation, the system must drive CE# and
WE# to VIL and OE# to VIH when providing an address,
command, and data. Addresses are latched on the last
falling edge of WE# or CE#, while data is latched on the
1st rising edge of WE# or CE#. The asynchronous and
synchronous programing operation is independent of
the Set Device Read Mode bit in the Configuration
Register (see Table 15, “Configuration Register,” on
page 33).
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are
required to program a word, instead of four.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 10, “Sector Address
Table,” on page 26 indicates the address space that
each sector occupies. The device address space is
divided into four banks: Banks B and C contain only 32
Kword sectors, while Banks A and D contain both 4
Kword boot sectors in addition to 32 Kword sectors. A
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
“bank address” is the address bits required to uniquely
select a bank. Similarly, a “sector address” is the
address bits required to uniquely select a sector.
ICC2 in the “DC Characteristics” section on page 49
represents the active current specification for the write
mode. The AC Characteristics section contains timing
specification tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. ACC is primarily intended to
allow faster manufacturing throughput at the factory.
If the system asserts VHH on this input, the device automatically enters the aforementioned Unlock Bypass
October 23, 2003
mode and uses the higher voltage on the input to
reduce the time required for program operations. The
system would use a two-cycle program command
sequence as required by the Unlock Bypass mode.
Removing VHH from the ACC input returns the device
to normal operation. Note that sectors must be
unlocked prior to raising ACC to VHH. Note that the
ACC pin must not be at VHH for operations other than
accelerated programming, or device damage may
result. In addition, the ACC pin must not be left floating
or unconnected; inconsistent behavior of the device
may result.
When at VIL, ACC locks all sectors. ACC should be at
VIH for all other conditions.
Am42BDS6408H
15
A D V A N C E
Table 3. Am42BDS6408H Boot Sector/Sector
Block Addresses for Protection/Unprotection
I N F O R M A T I O N
Sector
A21–A12
Sector/
Sector Block Size
SA135
1111111001
4 Kwords
1111111010
4 Kwords
A21–A12
Sector/
Sector Block Size
SA136
Sector
SA137
1111111011
4 Kwords
SA0
0000000000
4 Kwords
SA138
1111111100
4 Kwords
SA1
0000000001
4 Kwords
SA139
1111111101
4 Kwords
SA2
0000000010
4 Kwords
SA140
1111111110
4 Kwords
SA3
0000000011
4 Kwords
SA141
1111111111
4 Kwords
SA4
0000000100
4 Kwords
SA5
0000000101
4 Kwords
SA6
0000000110
4 Kwords
SA7
0000000111
4 Kwords
SA8
0000001XXX
32 Kwords
32 Kwords
Sector/Sector Block Protection and Unprotection
The hardware sector protection feature disables both
programming and erase operations in any sector. The
hardware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
SA9
0000010XXX
SA10
0000011XXX
32 Kwords
SA11–SA14
00001XXXXX
128 (4x32) Kwords
SA15–SA18
00010XXXXX
128 (4x32) Kwords
SA19–SA22
00011XXXXX
128 (4x32) Kwords
SA23-SA26
00100XXXXX
128 (4x32) Kwords
SA27-SA30
00101XXXXX
128 (4x32) Kwords
SA31-SA34
00110XXXXX
128 (4x32) Kwords
SA35-SA38
00111XXXXX
128 (4x32) Kwords
SA39-SA42
01000XXXXX
128 (4x32) Kwords
SA43-SA46
01001XXXXX
128 (4x32) Kwords
SA47-SA50
01010XXXXX
128 (4x32) Kwords
SA51–SA54
01011XXXXX
128 (4x32) Kwords
SA55–SA58
01100XXXXX
128 (4x32) Kwords
SA59–SA62
01101XXXXX
128 (4x32) Kwords
SA63–SA66
01110XXXXX
128 (4x32) Kwords
SA67–SA70
01111XXXXX
128 (4x32) Kwords
SA71–SA74
10000XXXXX
128 (4x32) Kwords
SA75–SA78
10001XXXXX
128 (4x32) Kwords
SA79–SA82
10010XXXXX
128 (4x32) Kwords
SA83–SA86
10011XXXXX
128 (4x32) Kwords
SA87–SA90
10100XXXXX
128 (4x32) Kwords
WP# Hardware Protection
SA91–SA94
10101XXXXX
128 (4x32) Kwords
SA95–SA98
10110XXXXX
128 (4x32) Kwords
A write protect pin that can prevent program or erase
operations in the outermost sectors.
SA99–SA102
10111XXXXX
128 (4x32) Kwords
SA103–SA106
11000XXXXX
128 (4x32) Kwords
SA107–SA110
11001XXXXX
128 (4x32) Kwords
The WP# Hardware Protection feature is always available, independent of the software managed protection
method chosen.
SA111–SA114
11010XXXXX
128 (4x32) Kwords
Selecting a Sector Protection Mode
SA115–SA118
11011XXXXX
128 (4x32) Kwords
SA119–SA122
11100XXXXX
128 (4x32) Kwords
SA123–SA126
11101XXXXX
128 (4x32) Kwords
SA127–SA130
11110XXXXX
128 (4x32) Kwords
SA131
1111100XXX
32 Kwords
SA132
1111101XXX
32 Kwords
SA133
1111110XXX
32 Kwords
SA134
1111111000
4 Kwords
All parts default to operate in the Persistent Sector
Protection mode. The customer must then choose if
the Persistent or Password Protection method is most
desirable. There are two one-time programmable
non-volatile bits that define which sector protection
method will be used. If the customer decides to continue using the Persistent Sector Protection method,
they must set the Persistent Sector Protection Mode
Locking Bit. This will permanently set the part to op-
16
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table 3,
“ A m 4 2 B D S 6 4 0 8 H B o o t S e c t o r / S e c t o r B l o ck
Addresses for Protection/Unprotection,” on page 16
Sector Protection
The Am42BDS6408H features several levels of sector
protection, which can disable both the program and
erase operations in certain sectors or sector groups:
Persistent Sector Protection
A command sector protection method that replaces
the old 12 V controlled protection method.
Password Sector Protection
A highly sophisticated protection method that requires
a password before changes to certain sectors or sector groups are permitted
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
erate only using Persistent Sector Protection. If the
customer decides to use the password method, they
must set the Password Mode Locking Bit. This will
permanently set the part to operate only using password sector protection.
ity of the user to perfor m the preprogramming
operation. Otherwise, an already erased sector PPBs
has the potential of being over-erased. There is no
ha r dwa r e m ech a ni sm t o p r eve n t se ct or P PBs
over-erasure.
It is important to remember that setting either the Persistent Sector Protection Mode Locking Bit or the
Password Mode Locking Bit permanently selects the
protection mode. It is not possible to switch between
the two methods once a locking bit has been set. It is
important that one mode is explicitly selected
when the device is first programmed, rather than
relying on the default mode alone. This is so that it
is not possible for a system program or virus to later
set the Password Mode Locking Bit, which would
cause an unexpected shift from the default Persistent
Sector Protection Mode into the Password Protection
Mode.
Persistent Protection Bit Lock (PPB Lock)
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at the factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See “Autoselect Command Sequence” section on page 33 for details.
Persistent Sector Protection
The Persistent Sector Protection method replaces the
old 12 V controlled protection method while at the
same time enhancing flexibility by providing three different sector protection states:
■ Persistently Locked—A sector is protected and
cannot be changed.
■ Dynamically Locked—The sector is protected and
can be changed by a simple command
■ Unlocked—The sector is unprotected and can be
changed by a simple command
In order to achieve these states, three types of “bits”
are going to be used:
Persistent Protection Bit (PPB)
A single Persistent (non-volatile) Protection Bit is assigned to a maximum four sectors (“Am42BDS6408H
Boot Sector/Sector Block Addresses for Protection/Unprotection” section on page 16). All 4 Kbyte
boot-block sectors have individual sector Persistent
Protection Bits (PPBs) for greater flexibility. Each PPB
is individually modifiable through the PPB Program
Command.
Note: If a PPB requires erasure, all of the sector PPBs
must first be preprogrammed prior to PPB erasing. All
PPBs erase in parallel, unlike programming where individual PPBs are programmable. It is the responsibil-
October 23, 2003
A global volatile bit. When set to “1”, the PPBs cannot
be changed. When cleared (“0”), the PPBs are
changeable. There is only one PPB Lock bit per device. The PPB Lock is cleared after power-up or hardware reset. There is no command sequence to unlock
the PPB Lock.
Dynamic Protection Bit (DYB)
A volatile protection bit is assigned for each sector.
After power-up or hardware reset, the contents of all
DYBs is “0”. Each DYB is individually modifiable
through the DYB Write Command.
When the par ts are first shipped, the PPBs are
cleared. The DYBs and PPB Lock are defaulted to
power up in the cleared state – meaning the PPBs are
changeable.
When the device is first powered on the DYBs power
up cleared (sectors not protected). The Protection
State for each sector is determined by the logical OR
of the PPB and the DYB related to that sector. For the
sectors that have the PPBs cleared, the DYBs control
whether or not the sector is protected or unprotected.
By issuing the DYB Write command sequences, the
DYBs will be set or cleared, thus placing each sector in
the protected or unprotected state. These are the
so-called Dynamic Locked or Unlocked states. They
are called dynamic states because it is very easy to
switch back and forth between the protected and unprotected conditions. This allows software to easily
protect sectors against inadvertent changes yet does
not prevent the easy removal of protection when
changes are needed. The DYBs maybe set or cleared
as often as needed.
The PPBs allow for a more static, and difficult to
change, level of protection. The PPBs retain their state
across power cycles because they are Non-Volatile.
Individual PPBs are set with a command but must all
be cleared as a group through a complex sequence of
program and erasing commands. The PPBs are also
limited to 100 erase cycles.
The PBB Lock bit adds an additional level of protection. Once all PPBs are programmed to the desired
settings, the PPB Lock may be set to “1”. Setting the
PPB Lock disables all program and erase commands
to the Non-Volatile PPBs. In effect, the PPB Lock Bit
locks the PPBs into their current state. The only way to
clear the PPB Lock is to go through a power cycle.
System boot code can determine if any changes to the
Am42BDS6408H
17
A D V A N C E
I N F O R M A T I O N
PPB are needed e.g. to allow new system code to be
downloaded. If no changes are needed then the boot
code can set the PPB Lock to disable any further
changes to the PPBs during system operation.
The WP# write protect pin adds a final level of hardware protection to the four highest and four lowest 4
Kbyte sectors (SA0 - SA3, SA138 - SA141 for a dual
boot). When this pin is low it is not possible to change
the contents of these four sectors. These sectors generally hold system boot code. So, the WP# pin can
prevent any changes to the boot code that could override the choices made while setting up sector protection during system initialization.
It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic
state. The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a
simple DYB Write command sequence is all that is
necessary. The DYB write command for the dynamic
sectors switch the DYBs to signify protected and unprotected, respectively. If there is a need to change the
status of the persistently locked sectors, a few more
steps are required. First, the PPB Lock bit must be disabled by either putting the device through a power-cycle, or hardware reset. The PPBs can then be
changed to reflect the desired settings. Setting the
PPB lock bit once again will lock the PPBs, and the device operates normally again.
Note: to achieve the best protection, it’s recommended
to execute the PPB lock bit set command early in the
boot code, and protect the boot code by holding WP#
= VIL.
Table 4.
Sector Protection Schemes
In summary, if the PPB is set, and the PPB lock is set,
the sector is protected and the protection can not be
removed until the next power cycle clears the PPB
lock. If the PPB is cleared, the sector can be dynamically locked or unlocked. The DYB then controls
whether or not the sector is protected or unprotected.
If the user attempts to program or erase a protected
sector, the device ignores the command and returns to
read mode. A program command to a protected sector
enables status polling for approximately 1 µs before
the device returns to read mode without having modified the contents of the protected sector. An erase
command to a protected sector enables status polling
for approximately 50 µs after which the device returns
to read mode without having erased the protected sector.
The programming of the DYB, PPB, and PPB lock for a
g i ve n s e c t o r c a n b e v e r i f i e d b y w r i t i n g a
DYB/PPB/PPB lock verify command to the device.
Persistent Sector Protection Mode
Locking Bit
Like the password mode locking bit, a Persistent Sector Protection mode locking bit exists to guarantee that
the device remain in software sector protection. Once
set, the Persistent Sector Protection locking bit prevents programming of the password protection mode
locking bit. This guarantees that a hacker could not
place the device in password protection mode.
Password Protection Mode
The Password Sector Protection Mode method allows
an even higher level of security than the Persistent
Sector Protection Mode. There are two main differences between the Persistent Sector Protection and
the Password Sector Protection Mode:
DYB
PPB
PPB
Lock
0
0
0
Unprotected—PPB and DYB are
changeable
■ When the device is first powered on, or comes out
of a reset cycle, the PPB Lock bit is set to the
locked state, rather than cleared to the unlocked
state.
0
0
1
Unprotected—PPB not
changeable, DYB is changeable
■ The only means to clear the PPB Lock bit is by writing a unique 64-bit Password to the device.
0
1
0
1
0
0
1
1
0
0
1
1
1
0
1
1
1
1
Sector State
Protected—PPB and DYB are
changeable
Protected—PPB not
changeable, DYB is changeable
Table 4 contains all possible combinations of the DYB,
PPB, and PPB lock relating to the status of the sector.
18
The Password Sector Protection method is otherwise
identical to the Persistent Sector Protection method.
A 64-bit password is the only additional tool utilized in
this method.
The password is stored in a one-time programmable
(OTP) region of the flash memory. Once the Password
Mode Locking Bit is set, the password is permanently
set with no means to read, program, or erase it. The
password is used to clear the PPB Lock bit. The Password Unlock command must be written to the flash,
along with a password. The flash device internally
compares the given password with the pre-pro-
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
grammed password. If they match, the PPB Lock bit is
cleared, and the PPBs can be altered. If they do not
match, the flash device does nothing. There is a
built-in 2 µs delay for each “password check.” This
delay is intended to thwart any efforts to run a program
that tries all possible combinations in order to crack
the password.
Password and Password Mode Locking Bit
In order to select the Password sector protection
scheme, the customer must first program the password. AMD recommends that the password be
somehow correlated to the unique Electronic Serial
Number (ESN) of the particular flash device. Each ESN
is different for every flash device; therefore each password should be different for every flash device. While
programming in the password region, the customer
may perform Password Verify operations.
Once the desired password is programmed in, the
customer must then set the Password Mode Locking
Bit. This operation achieves two objectives:
1. It permanently sets the device to operate using the
Password Protection Mode. It is not possible to reverse this function.
2. It also disables all further commands to the password region. All program, and read operations are
ignored.
Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors.
The user must be sure that the Password Protection
method is desired when setting the Password Mode
Locking Bit. More importantly, the user must be sure
that the password is correct when the Password Mode
Locking Bit is set. Due to the fact that read operations
are disabled, there is no means to verify what the
password is afterwards. If the password is lost after
setting the Password Mode Locking Bit, there will be
no way to clear the PPB Lock bit.
The Password Mode Locking Bit, once set, prevents
reading the 64-bit password on the DQ bus and further
password programming. The Password Mode Locking
Bit is not erasable. Once Password Mode Locking Bit
is programmed, the Persistent Sector Protection Locking Bit is disabled from programming, guaranteeing
that no changes to the protection scheme are allowed.
64-bit Password
The 64-bit Password is located in its own memory
space and is accessible through the use of the Password Program and Verify commands (see “Password
Program Command” section on page 37 and “Password Verify Command” section on page 37). The
password function works in conjunction with the Password Mode Locking Bit, which when set, prevents the
October 23, 2003
Password Verify command from reading the contents
of the password on the pins of the device.
Persistent Protection Bit Lock
The Persistent Protection Bit (PPB) Lock is a volatile
bit that reflects the state of the Password Mode Locking Bit after power-up reset. If the Password Mode
Lock Bit is also set, after a hardware reset (RESET#
asserted) or a power-up reset the ONLY means for
clearing the PPB Lock Bit in Password Protection
Mode is to issue the Password Unlock command. Successful execution of the Password Unlock command
clears the PPB Lock Bit, allowing for sector PPBs
modifications. Asserting RESET#, taking the device
through a power-on reset, or issuing the PPB Lock Bit
Set command sets the PPB Lock Bit to a “1”.
If the Password Mode Locking Bit is not set, including
Persistent Protection Mode, the PPB Lock Bit is
cleared after power-up or hardware reset. The PPB
Lock Bit is set by issuing the PPB Lock Bit Set command. Once set the only means for clearing the PPB
Lock Bit is by issuing a hardware or power-up reset.
The Password Unlock command is ignored in Persistent Protection Mode.
High Voltage Sector Protection
Sector protection and unprotection may also be implemented using programming equipment. The procedure
requires high voltage (V ID ) to be placed on the
RESET# pin. Refer to Figure 2, “In-System Sector Protection/ Sector Unprotection Algorithms,” on page 21
for details on this procedure. Note that for sector unprotect, all unprotected sectors must be first protected
prior to the first sector write cycle. Once the Password
Mode Locking bit or Persistent Protection Locking bit
are set, the high voltage sector protect/unprotect capability is disabled.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# inputs are both held at VCC ± 0.2 V.
The device requires standard access time (tCE) for read
access, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation is completed.
ICC3 in the “DC Characteristics” section on page 49
represents the standby current specification.
Am42BDS6408H
19
A D V A N C E
I N F O R M A T I O N
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. While in asynchronous mode, the
device automatically enables this mode when
addresses remain stable for tACC + 60 ns. The automatic sleep mode is independent of the CE#, WE#, and
OE# control signals. Standard address access timings
provide new data when addresses are changed. While
in sleep mode, output data is latched and always available to the system. While in synchronous mode, the
device automatically enables this mode when either the
first active CLK level is greater than tACC or the CLK
runs slower than 5 MHz. Note that a new burst operation is required to provide new data.
ICC6 in the “DC Characteristics” section on page 49
represents the automatic sleep mode current specification.
Embedded Algorithms) before the device is ready to
read data again. If RESET# is asser ted when a
program or erase operation is not executing, the reset
operation is completed within a time of tREADY (not
during Embedded Algorithms). The system can read
data tRH after RESET# returns to VIH.
Refer to the “AC Characteristics” section on page 64 for
RESET# parameters and to Figure 30, “Reset Timings,” on page 64 for the timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The outputs are placed in the high impedance state.
Figure 1.
Temporary Sector Unprotect Operation
START
RESET#: Hardware Reset Input
The RESET# input provides a hardware method of
resetting the device to reading array data. When
RESET# is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all outputs, resets the configuration
register, and ignores all read/write commands for the
duration of the RESET# pulse. The device also resets
the internal state machine to reading array data. The
operation that was interrupted should be reinitiated
once the device is ready to accept another command
sequence, to ensure data integrity.
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS ± 0.2 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS ± 0.2 V, the standby current will
be greater.
RESET# may be tied to the system reset circuitry. A
system reset would thus also reset the Flash memory,
enabling the system to read the boot-up firmware from
the Flash memory.
If RESET# is asserted during a program or erase operation, the device requires a time of tREADY (during
20
Notes:
1. All protected sectors unprotected (If WP# = VIL,
outermost boot sectors will remain protected).
2. All previously protected sectors are protected once
again.
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A7–A0 =
00000010
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A7–A0 =
01000010
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A7–A0 =
00000010
Reset
PLSCNT = 1
Read from
sector address
with A7–A0 =
00000010
Wait 15 ms
Verify Sector
Unprotect: Write
40h to sector
address with
A7–A0 =
00000010
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Protect another
sector?
PLSCNT
= 1000?
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Protect
Algorithm
Read from
sector address
with A7–A0 =
00000010
Data = 01h?
Sector Protect
complete
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2. In-System Sector Protection/
Sector Unprotection Algorithms
October 23, 2003
Am42BDS6408H
21
A D V A N C E
I N F O R M A T I O N
SecSi™ (Secured Silicon) Sector
Flash Memory Region
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN) The 128-word SecSi sector is divided into 64
factory-lockable words that can be programmed and
locked by the customer. The SecSi sector is located at
addresses 000000h-00007Fh in both Persistent Protection mode and Password Protection mode. It uses
in dica to r b its (DQ6 , D Q7) t o in dica te t he fa ctory-locked and customer-locked status of the part.
The system accesses the SecSi Sector through a
command sequence (see “Enter SecSi™ Sector/Exit
SecSi Sector Command Sequence”). After the system
has written the Enter SecSi Sector command sequence, it may read the SecSi Sector by using the addresses normally occupied by the boot sectors. This
mode of operation continues until the system issues
the Exit SecSi Sector command sequence, or until
power is removed from the device. On power-up, or
following a hardware reset, the device reverts to sending commands to the normal address space.
Factory-Locked Area (64 words)
T h e fa c t o r y - l o cke d a r e a o f t h e S e c S i S e c t o r
(000000h-00003Fh) is locked when the par t is
shipped, whether or not the area was programmed at
the factory. The SecSi Sector Factory-locked Indicator
Bit (DQ7) is permanently set to a “1”. AMD offers the
ExpressFlash service to program the factory-locked
area with a random ESN, a customer-defined code, or
any combination of the two. Because only AMD can
program and protect the factory-locked area, this
method ensures the security of the ESN once the
product is shipped to the field. Contact an AMD representative for details on using AMD’s ExpressFlash service.
Table 5.
SecSiTM Sector Addresses
Sector Size
Address Range
Am42BDS6408H
128 words
000000h–00007Fh
Factory-Locked Area
64 words
000000h-00003Fh
Customer-Lockable Area
64 words
000040h-00007Fh
Customer-Lockable Area (64 words)
The customer-lockable area of the SecSi Sector
(000040h-00007Fh) is shipped unprotected, which allows the customer to program and optionally lock the
area as appropriate for the application. The SecSi
Sector Customer-locked Indicator Bit (DQ6) is shipped
as “0” and can be permanently locked to “1” by issuing
the SecSi Protection Bit Program Command. The
SecSi Sector can be read any number of times, but
can be programmed and locked only once. Note that
22
the accelerated programming (ACC) and unlock bypass functions are not available when programming
the SecSi Sector.
The Customer-lockable SecSi Sector area can be protected using one of the following procedures:
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 2, except that RESET# may be at either VIH or VID. This
allows in-system protection of the SecSi Sector Region without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
■ Write the three-cycle Enter SecSi Sector Secure
Region command sequence, and then use the alternate method of sector protection described in the
High Voltage Sector Protection section.
Once the SecSi Sector is locked and verified, the system must write the Exit SecSi Sector Region command sequence to return to reading and writing the
remainder of the array.
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
SecSi Sector Protection Bits
The SecSi Sector Protection Bits prevent programming of the SecSi Sector memory area. Once set, the
SecSi Sector memory area contents are non-modifiable.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 16, “Command Definitions,” on page 40 for command definitions).
The device offers two types of data protection at the
sector level:
■ The PPB and DYB associated command sequences disables or re-enables both program and
erase operations in any sector or sector group.
■ When WP# is at VIL, the four outermost sectors are
locked.
■ When ACC is at VIL, all sectors are locked.
The following hardware data protection measures
prevent accidental erasure or programming, which
might otherwise be caused by spurious system level
signals during VCC power-up and power-down transitions, or from system noise.
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
Write Protect (WP#)
The Write Protect feature provides a hardware method
of protecting the four outermost sectors. This function
is provided by the WP# pin and overrides the previously discussed Sector Protection/Unprotection
method.
If the system asserts VIL on the WP# pin, the device
disables program and erase functions in the eight “outermost” 4 Kword boot sectors.
If the system asserts VIH on the WP# pin, the device
reverts to whether sectors 0–3 and 138–141 were last
set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends on
whether they were last protected or unprotected using
the method described in “PPB Program Command”
section on page 38.
Note that the WP# pin must not be left floating or unconnected; inconsistent behavior of the device may result.
Low VCC Write Inhibit
When V CC is less than V LKO, the device does not
accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets to reading array data. Subsequent writes
are ignored until VCC is greater than VLKO. The system
must provide the proper signals to the control inputs to
prevent unintentional writes when VCC is greater than
VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
Table 6.
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = RESET# = VIL and OE# = VIH during
power up, the device does not accept commands on
the rising edge of WE#. The internal state machine is
automatically reset to the read mode on power-up.
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families.
Flash vendors can standardize their existing interfaces
for long-term compatibility.
This device enters the CFI Query mode when the
system writes the CFI Query command, 98h, to
address 55h any time the device is ready to read array
data. The system can read CFI information at the
addresses given in Tables 6-9. To terminate reading
CFI data, the system must write the reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 6-9. The
system must write the reset command to return the
device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the AMD
site at the following URL:
http://www.amd.com/flash/cfi.
Alternatively, contact an AMD representative for copies
CFI Query Identification String
Addresses
Data
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
October 23, 2003
Description
Am42BDS6408H
23
A D V A N C E
Table 7.
System Interface String
Addresses
Data
Description
1Bh
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single byte/word write 2N µs
20h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0004h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 8.
Addresses
24
I N F O R M A T I O N
Device Geometry Definition
Data
Description
2N
byte
27h
0017h
Device Size =
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
Am42BDS6408H
October 23, 2003
A D V A N C E
Table 9.
I N F O R M A T I O N
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
000Ch
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Technology (Bits 5-2) 0011 = 0.13 µm
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0000h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0007h
Sector Protect/Unprotect scheme
07 = Advanced Sector Protection
4Ah
0077h
Simultaneous Operation
Number of Sectors in all banks except boot block
4Bh
0001h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page, 04 = 16 Word Page
4Dh
00B5h
4Eh
00C5h
4Fh
0001h
50h
0000h
Program Suspend. 00h = not supported
57h
0004h
Bank Organization: X = Number of banks
58h
0017h
Bank A Region Information. X = Number of sectors in bank
59h
0030h
Bank B Region Information. X = Number of sectors in bank
5Ah
0030h
Bank C Region Information. X = Number of sectors in bank
5Bh
0017h
Bank D Region Information. X = Number of sectors in bank
October 23, 2003
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
01h = Dual Boot Device, 02h = Bottom Boot Device, 03h = Top Boot Device
Am42BDS6408H
25
A D V A N C E
Table 10.
Bank
Bank D
Bank C
26
I N F O R M A T I O N
Sector Address Table
Sector
Sector Size
Address Range
SA0
4 Kwords
000000h-000FFFh
SA1
4 Kwords
001000h-001FFFh
SA2
4 Kwords
002000h-002FFFh
SA3
4 Kwords
003000h-003FFFh
SA4
4 Kwords
004000h-004FFFh
SA5
4 Kwords
005000h-005FFFh
SA6
4 Kwords
006000h-006FFFh
SA7
4 Kwords
007000h-007FFFh
SA8
32 Kwords
008000h-00FFFFh
SA9
32 Kwords
010000h-017FFFh
SA10
32 Kwords
018000h-01FFFFh
SA11
32 Kwords
020000h-027FFFh
SA12
32 Kwords
028000h-02FFFFh
SA13
32 Kwords
030000h-037FFFh
SA14
32 Kwords
038000h-03FFFFh
SA15
32 Kwords
040000h-047FFFh
SA16
32 Kwords
048000h-04FFFFh
SA17
32 Kwords
050000h-057FFFh
SA18
32 Kwords
058000h-05FFFFh
SA19
32 Kwords
060000h-067FFFh
SA20
32 Kwords
068000h-06FFFFh
SA21
32 Kwords
070000h-077FFFh
SA22
32 Kwords
078000h-07FFFFh
SA23
32 Kwords
080000h-087FFFh
SA24
32 Kwords
088000h-08FFFFh
SA25
32 Kwords
090000h-097FFFh
SA26
32 Kwords
098000h-09FFFFh
SA27
32 Kwords
0A0000h-0A7FFFh
SA28
32 Kwords
0A8000h-0AFFFFh
SA29
32 Kwords
0B0000h-0B7FFFh
SA30
32 Kwords
0B8000h-0BFFFFh
SA31
32 Kwords
0C0000h-0C7FFFh
SA32
32 Kwords
0C8000h-0CFFFFh
SA33
32 Kwords
0D0000h-0D7FFFh
SA34
32 Kwords
0D8000h-0DFFFFh
SA35
32 Kwords
0E0000h-0E7FFFh
SA36
32 Kwords
0E8000h-0EFFFFh
SA37
32 Kwords
0F0000h-0F7FFFh
SA38
32 Kwords
0F8000h-0FFFFFh
Am42BDS6408H
October 23, 2003
A D V A N C E
Bank
Bank C
October 23, 2003
I N F O R M A T I O N
Sector
Sector Size
Address Range
SA39
32 Kwords
100000h-107FFFh
SA40
32 Kwords
108000h-10FFFFh
SA41
32 Kwords
110000h-117FFFh
SA42
32 Kwords
118000h-11FFFFh
SA43
32 Kwords
120000h-127FFFh
SA44
32 Kwords
128000h-12FFFFh
SA45
32 Kwords
130000h-137FFFh
SA46
32 Kwords
138000h-13FFFFh
SA47
32 Kwords
140000h-147FFFh
SA48
32 Kwords
148000h-14FFFFh
SA49
32 Kwords
150000h-157FFFh
SA50
32 Kwords
158000h-15FFFFh
SA51
32 Kwords
160000h-167FFFh
SA52
32 Kwords
168000h-16FFFFh
SA53
32 Kwords
170000h-177FFFh
SA54
32 Kwords
178000h-17FFFFh
SA55
32 Kwords
180000h-187FFFh
SA56
32 Kwords
188000h-18FFFFh
SA57
32 Kwords
190000h-197FFFh
SA58
32 Kwords
198000h-19FFFFh
SA59
32 Kwords
1A0000h-1A7FFFh
SA60
32 Kwords
1A8000h-1AFFFFh
SA61
32 Kwords
1B0000h-1B7FFFh
SA62
32 Kwords
1B8000h-1BFFFFh
SA63
32 Kwords
1C0000h-1C7FFFh
SA64
32 Kwords
1C8000h-1CFFFFh
SA65
32 Kwords
1D0000h-1D7FFFh
SA66
32 Kwords
1D8000h-1DFFFFh
SA67
32 Kwords
1E0000h-1E7FFFh
SA68
32 Kwords
1E8000h-1EFFFFh
SA69
32 Kwords
1F0000h-1F7FFFh
SA70
32 Kwords
1F8000h-1FFFFFh
Am42BDS6408H
27
A D V A N C E
Bank
Bank B
28
I N F O R M A T I O N
Sector
Sector Size
Address Range
SA71
32 Kwords
200000h-207FFFh
SA72
32 Kwords
208000h-20FFFFh
SA73
32 Kwords
210000h-217FFFh
SA74
32 Kwords
218000h-21FFFFh
SA75
32 Kwords
220000h-227FFFh
SA76
32 Kwords
228000h-22FFFFh
SA77
32 Kwords
230000h-237FFFh
SA78
32 Kwords
238000h-23FFFFh
SA79
32 Kwords
240000h-247FFFh
SA80
32 Kwords
248000h-24FFFFh
SA81
32 Kwords
250000h-257FFFh
SA82
32 Kwords
258000h-25FFFFh
SA83
32 Kwords
260000h-267FFFh
SA84
32 Kwords
268000h-26FFFFh
SA85
32 Kwords
270000h-277FFFh
SA86
32 Kwords
278000h-27FFFFh
SA87
32 Kwords
280000h-287FFFh
SA88
32 Kwords
288000h-28FFFFh
SA89
32 Kwords
290000h-297FFFh
SA90
32 Kwords
298000h-29FFFFh
SA91
32 Kwords
2A0000h-2A7FFFh
SA92
32 Kwords
2A8000h-2AFFFFh
SA93
32 Kwords
2B0000h-2B7FFFh
SA94
32 Kwords
2B8000h-2BFFFFh
SA95
32 Kwords
2C0000h-2C7FFFh
SA96
32 Kwords
2C8000h-2CFFFFh
SA97
32 Kwords
2D0000h-2D7FFFh
SA98
32 Kwords
2D8000h-2DFFFFh
SA99
32 Kwords
2E0000h-2E7FFFh
SA100
32 Kwords
2E8000h-2EFFFFh
SA101
32 Kwords
2F0000h-2F7FFFh
SA102
32 Kwords
2F8000h-2FFFFFh
Am42BDS6408H
October 23, 2003
A D V A N C E
Bank
Bank B
Bank A
October 23, 2003
I N F O R M A T I O N
Sector
Sector Size
Address Range
SA103
32 Kwords
300000h-307FFFh
SA104
32 Kwords
308000h-30FFFFh
SA105
32 Kwords
310000h-317FFFh
SA106
32 Kwords
318000h-31FFFFh
SA107
32 Kwords
320000h-327FFFh
SA108
32 Kwords
328000h-32FFFFh
SA109
32 Kwords
330000h-337FFFh
SA110
32 Kwords
338000h-33FFFFh
SA111
32 Kwords
340000h-347FFFh
SA112
32 Kwords
348000h-34FFFFh
SA113
32 Kwords
350000h-357FFFh
SA114
32 Kwords
358000h-35FFFFh
SA115
32 Kwords
360000h-367FFFh
SA116
32 Kwords
368000h-36FFFFh
SA117
32 Kwords
370000h-377FFFh
SA118
32 Kwords
378000h-37FFFFh
SA119
32 Kwords
380000h-387FFFh
SA120
32 Kwords
388000h-38FFFFh
SA121
32 Kwords
390000h-397FFFh
SA122
32 Kwords
398000h-39FFFFh
SA123
32 Kwords
3A0000h-3A7FFFh
SA124
32 Kwords
3A8000h-3AFFFFh
SA125
32 Kwords
3B0000h-3B7FFFh
SA126
32 Kwords
3B8000h-3BFFFFh
SA127
32 Kwords
3C0000h-3C7FFFh
SA128
32 Kwords
3C8000h-3CFFFFh
SA129
32 Kwords
3D0000h-3D7FFFh
SA130
32 Kwords
3D8000h-3DFFFFh
SA131
32 Kwords
3E0000h-3E7FFFh
SA132
32 Kwords
3E8000h-3EFFFFh
SA133
32 Kwords
3F0000h-3F7FFFh
SA134
4 Kwords
3F8000h-3F8FFFh
SA135
4 Kwords
3F9000h-3F9FFFh
SA136
4 Kwords
3FA000h-3FAFFFh
SA137
4 Kwords
3FB000h-3FBFFFh
SA138
4 Kwords
3FC000h-3FCFFFh
SA139
4 Kwords
3FD000h-3FDFFFh
SA140
4 Kwords
3FE000h-3FEFFFh
SA141
4 Kwords
3FF000h-3FFFFFh
Am42BDS6408H
29
A D V A N C E
I N F O R M A T I O N
COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 16, “Command Definitions,” on
p a g e 4 0 d e f i n e s t h e va li d r e g i s t e r co m m a n d
sequences. Writing incorrect address and data values
or writing them in the improper sequence may place the
device in an unknown state. The system must write the
reset command to return the device to reading array
data. Refer to the AC Characteristics section for timing
diagrams.
be C0h, address bits A11–A0 should be 555h, and
address bits A19–A12 set the code to be latched. The
device will power up or after a hardware reset with the
default setting, which is in asynchronous mode. The
register must be set before the device can enter synchronous mode. The configuration register can not be
changed during device operations (program, erase, or
sector lock).
Reading Array Data
Power-up/
Hardware Reset
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data in asynchronous mode. Each bank is
ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-suspend-read mode, after which the system can read data
from any non-erase-suspended sector within the same
bank. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data from any non-erase-suspended sector
within the same bank. See the “Erase Suspend/Erase
Resume Commands” section on page 36 for more
information.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase operation,
or if the bank is in the autoselect mode. See the “Reset
Command” section on page 33 for more information.
See also “Requirements for Asynchronous Read Operation (Non-Burst)” section on page 12 and “Requirements for Synchronous (Burst) Read Operation”
section on page 12 for more information. The Asynchronous Read and Synchronous/Burst Read tables
provide the read parameters, and Figure 13, “CLK Synchronous Burst Mode Read (rising active CLK),” on
page 54, Figure 15, “Synchronous Burst Mode Read,”
on page 55, and Figure 28, “Asynchronous Mode Read
with Latched Addresses,” on page 63 show the timings.
Set Configuration Register Command Sequence
The device uses a configuration register to set the
various burst parameters: number of wait states, burst
read mode, active clock edge, RDY configuration, and
synchronous mode active. The configuration register
must be set before the device will enter burst mode.
The configuration register is loaded with a three-cycle
command sequence. The first two cycles are standard
unlock sequences. On the third cycle, the data should
30
Asynchronous Read
Mode Only
Set Burst Mode
Configuration Register
Command for
Synchronous Mode
(A19 = 0)
Set Burst Mode
Configuration Register
Command for
Asynchronous Mode
(A19 = 1)
Synchronous Read
Mode Only
Figure 3.
Synchronous/Asynchronous State
Diagram
Read Mode Setting
On power-up or hardware reset, the device is set to be
in asynchronous read mode. This setting allows the
system to enable or disable burst mode during system
operations. Address A19 determines this setting: “1” for
asynchronous mode, “0” for synchronous mode.
Programmable Wait State Configuration
The programmable wait state feature informs the
device of the number of clock cycles that must elapse
after AVD# is driven active before data will be available.
This value is determined by the input frequency of the
device. Address bits A14–A12 determine the setting
(see Table 11, “Programmable Wait State Settings,” on
page 31).
The wait state command sequence instructs the device
to set a particular number of clock cycles for the initial
access in burst mode. The number of wait states that
should be programmed into the device is directly
related to the clock frequency.
Am42BDS6408H
October 23, 2003
A D V A N C E
Table 11.
I N F O R M A T I O N
Programmable Wait State Settings
A14
A13
A12
Total Initial Access
Cycles
0
0
0
2
Table 12.
Wait States for Reduced wait-state
Handshaking
VIO = 1.8 V
System
Frequency
Range
Even Initial
Address
Odd Initial
Address
Device
Speed
Rating
0
0
1
3
0
1
0
4
6–22 MHz
2
2
0
1
1
5
22–28 MHz
2
3
D
1
0
0
6
28–43 MHz
3
4
(54 MHz)
1
0
1
7 (default)
43–54 MHz
4
5
1
1
0
Reserved
6–28 MHz
2
2
1
1
1
Reserved
28–35 MHz
2
3
E
35–53 MHz
3
4
(66 MHz)
53–66 MHz
4
5
Notes:
1. Upon power-up or hardware reset, the default setting is
seven wait states.
2. RDY will default to being active with data when the Wait
State Setting is set to a total initial access cycle of 2.
VIO = 1.5 V
It is recommended that the wait state command
sequence be written, even if the default wait state value
is desired, to ensure the device is set as expected. A
hardware reset will set the wait state to the default setting.
Reduced Wait-state Handshaking Option
If the device is equipped with the reduced wait-state
handshaking option, the host system should set
address bits A14–A12 to 010 for the system/device to
execute at maximum speed.
Table 12 describes the typical number of clock cycles
(wait states) for various conditions.
System
Frequency
Range
Even Initial
Address
Odd Initial
Address
6–18 MHz
2
2
18–22 MHz
2
3
22–33 MHz
3
4
33–45 MHz
4
5
45–54 MHz
5
6
6–23 MHz
2
2
23–28 MHz
2
3
28–42 MHz
3
4
42–56 MHz
4
5
56–66 MHz
5
6
Device
Speed
Rating
D
(54 MHz)
E
(66 MHz)
Notes:
1. If the latched address is 3Eh or 3Fh (or an address offset
from either address by a multiple of 64), add two access
cycles to the values listed.
2. In the 8-, 16-, and 32-word burst modes, the address
pointer does not cross 64-word boundaries (3Fh, or
addresses offset from 3Fh by a multiple of 64).
3. Typical initial access cycles may vary depending on
system margin requirements.
Standard Handshaking Option
For optimal burst mode performance on devices with
the standard handshaking option, the host system
must set the appropriate number of wait states in the
flash device depending on the clock frequency.
October 23, 2003
Am42BDS6408H
31
A D V A N C E
I N F O R M A T I O N
Table 13 describes the typical number of clock cycles
(wait states) for various conditions with A14-A12 set to
101.
Table 13.
Table 14 shows the address bits and settings for the
four read modes.
Table 14.
Read Mode Settings
Wait States for Standard Handshaking
Conditions at Address
Initial address
Initial address is 3E or 3Fh (or
offset from these addresses by
a multiple of 64) and is at
boundary crossing*
Typical No. of Clock
Cycles after AVD# Low
7
7
* In the 8-, 16- and 32-word burst read modes, the address
pointer does not cross 64-word boundaries (addresses
which are multiples of 3Fh).
Address Bits
Burst Modes
A16
A15
Continuous
0
0
8-word linear wrap around
0
1
16-word linear wrap around
1
0
32-word linear wrap around
1
1
Note: Upon power-up or hardware reset the default setting is
continuous.
Burst Active Clock Edge Configuration
The autoselect function allows the host system to
determine whether the flash device is enabled for
h a nd sh a kin g . Se e t he “ Au t o se le ct C om m an d
Sequence” section on page 33 for more information.
Read Mode Configuration
The device supports four different read modes: continuous mode, and 8, 16, and 32 word linear wrap around
modes. A continuous sequence begins at the starting
address and advances the address pointer until the
burst operation is complete. If the highest address in
the device is reached during the continuous burst read
mode, the address pointer wraps around to the lowest
address.
For example, an eight-word linear read with wrap
around begins on the starting address written to the
device and then advances to the next 8 word boundary.
The address pointer then returns to the 1st word after
the previous eight word boundary, wrapping through
the starting location. The sixteen- and thirty-two linear
wrap around modes operate in a fashion similar to the
eight-word mode.
32
By default, the device will deliver data on the rising
edge of the clock after the initial synchronous access
time. Subsequent outputs will also be on the following
rising edges, barring any delays. The device can be set
so that the falling clock edge is active for all synchronous accesses. Address bit A17 determines this setting; “1” for rising active, “0” for falling active.
RDY Configuration
By default, the device is set so that the RDY pin will
output VOH whenever there is valid data on the outputs.
The device can be set so that RDY goes active one
data cycle before active data. Address bit A18 determines this setting; “1” for RDY active with data, “0” for
RDY active one clock cycle before valid data. In asynchronous mode, RDY is an open-drain output.
Configuration Register
Table 15 shows the address bits that determine the
configuration register settings for various device functions.
Am42BDS6408H
October 23, 2003
A D V A N C E
Table 15.
I N F O R M A T I O N
Configuration Register
Address BIt
Function
Settings (Binary)
A19
Set Device
Read Mode
A18
RDY
0 = RDY active one clock cycle before data
1 = RDY active with data (default)
A17
Clock
0 = Burst starts and data is output on the falling edge of CLK
1 = Burst starts and data is output on the rising edge of CLK (default)
0 = Synchronous Read (Burst Mode) Enabled
1 = Asynchronous Mode (default)
Synchronous Mode
A16
A15
A14
A13
A12
Read Mode
00 = Continuous (default)
01 = 8-word linear with wrap around
10 = 16-word linear with wrap around
11 = 32-word linear with wrap around
000 = Data is valid on the 2th active CLK edge after AVD# transition to VIH
001 = Data is valid on the 3th active CLK edge after AVD# transition to VIH
010 = Data is valid on the 4th active CLK edge after AVD# transition to VIH
Programmable 011 = Data is valid on the 5th active CLK edge after AVD# transition to VIH
100 = Data is valid on the 6th active CLK edge after AVD# transition to VIH
Wait State
101 = Data is valid on the 7th active CLK edge after AVD# transition to VIH (default)
110 = Reserved
111 = Reserved
Note:Device will be in the default state upon power-up or hardware reset.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the bank to which
the system was writing to the read mode. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins (prior to the third cycle).
This resets the bank to which the system was writing to
the read mode. If the program command sequence is
written to a bank that is in the Erase Suspend mode,
writing the reset command returns that bank to the
erase-suspend-read mode. Once programming
begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to the read mode. If a bank entered
the autoselect mode while in the Erase Suspend mode,
writing the reset command returns that bank to the
erase-suspend-read mode.
October 23, 2003
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 16, “Command Definitions,” on page 40 shows
the address and data requirements. The autoselect
command sequence may be written to an address
within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be
written while the device is actively programming or
erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the
autoselect command. The bank then enters the
autoselect mode. No subsequent data will be made
available if the autoselect data is read in synchronous
mode. The system may read at any address within the
same bank any number of times without initiating
another autoselect command sequence. Read commands to other banks will return data from the array.
The following table describes the address requirements for the various autoselect functions, and the
resulting data. BA represents the bank address, and
Am42BDS6408H
33
A D V A N C E
I N F O R M A T I O N
SA represents the sector address. The device ID is
read in three cycles.
Description
Address
Read Data
Manufacturer
ID
(BA) + 00h
0001h
Device ID,
Word 1
(BA) + 01h
227Eh
Device ID,
Word 2
(BA) + 0Eh
221Eh
Device ID,
Word 3
(BA) + 0Fh
2201h
Sector
Protection
Verification
(SA) + 02h
0001 (locked),
0000 (unlocked)
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and addresses
are no longer latched. The system can determine the
status of the program operation by monitoring DQ7 or
DQ6/DQ2. Refer to the “Write Operation Status”
section on page 43 for information on these status bits.
Any commands written to the device during the
Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should be
reinitiated once that bank has returned to the read
mode, to ensure data integrity.
DQ15 - DQ8 = 0
DQ7: Factory Lock Bit
1 = Locked, 0 = Not Locked
DQ6: Customer Lock Bit
Indicator Bits
(BA) + 03h
1 = Locked, 0 = Not Locked
DQ5: Handshake Bit
1 = Reduced Wait-state
Handshake,
0 = Standard Handshake
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, eight word electronic serial number (ESN). The system can access the SecSi Sector
region by issuing the three-cycle Enter SecSi Sector
command sequence. The device continues to access
the SecSi Sector region until the system issues the
four-cycle Exit SecSi Sector command sequence. The
Exit SecSi Sector command sequence returns the device to normal operation. The SecSi Sector is not accessible when the device is executing an Embedded
Program or embedded Erase algorithm. Table 16,
“Command Definitions,” on page 40 shows the address
and data requirements for both command sequences.
Program Command Sequence
Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program
algorithm. The system is not required to provide further
controls or timings. The device automatically provides
34
internally generated program pulses and verifies the
programmed cell margin. Table 16, “Command Definitions,” on page 40 shows the address and data requirements for the program command sequence.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from
“0” back to a “1.” Attempting to do so may cause that
bank to set DQ5 = 1, or cause the DQ7 and DQ6 status
bit to indicate the operation was successful. However,
a succeeding read will show that the data is still “0.”
Only erase operations can convert a “0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to primarily program to a bank faster than using the standard
program command sequence. The unlock bypass
command sequence is initiated by first writing two
unlock cycles. This is followed by a third write cycle
containing the unlock bypass command, 20h. The
device then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass
program command, A0h; the second cycle contains the
program address and data. Additional data is programmed in the same manner. This mode dispenses
with the initial two unlock cycles required in the standard program command sequence, resulting in faster
total programming time. The host system may also initiate the chip erase and sector erase sequences in the
unlock bypass mode. The erase command sequences
are four cycles in length instead of six cycles. Table 16,
“Command Definitions,” on page 40 shows the requirements for the unlock bypass command sequences.
During the unlock bypass mode, only the Read, Unlock
Bypass Program, Unlock Bypass Sector Erase, Unlock
Bypass Chip Erase, and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the
system must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
bank address and the data 90h. The second cycle
need only contain the data 00h. The bank then returns
to the read mode.
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
The device offers accelerated program operations
through the ACC input. When the system asserts VHH
on this input, the device automatically enters the
Unlock Bypass mode. The system may then write the
t wo - c y c le U n l o ck B y p a s s p ro gra m c o m m a n d
sequence. The device uses the higher voltage on the
ACC input to accelerate the operation.
Figure 4, “Program Operation,” on page 35 illustrates
the algorithm for the program operation. Refer to the
Erase/Program Operations table in the AC Characteristics section for parameters, and Figure 31, “Asynchronous Program Operation Timings: AVD# Latched
Addresses,” on page 66 and Figure 33, “Synchronous
Program Operation Timings: WE# Latched Addresses,”
on page 68 for timing diagrams.
Write Program
Command Sequence
Sector Erase Command Sequence
No
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 16, “Command Definitions,” on page 40 shows the address and data
requirements for the sector erase command sequence.
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 16 for program command sequence.
Figure 4.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
October 23, 2003
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that
occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading array
data, to ensure data integrity.
Figure 5, “Erase Operation,” on page 37 illustrates the
algorithm for the erase operation. Refer to the
Erase/Program Operations table in the AC Characteristics section for parameters and timing diagrams.
Data Poll
from System
Verify Data?
When the Embedded Erase algorithm is complete, that
bank returns to the read mode and addresses are no
longer latched. The system can determine the status of
the erase operation by using DQ7 or DQ6/DQ2. Refer
to the “Write Operation Status” section on page 43 for
information on these status bits.
The host system may also initiate the chip erase
command sequence while the device is in the unlock
bypass mode. The command sequence is two cycles
cycles in length instead of six cycles. See Table 16,
“Command Definitions,” on page 40 for details on the
unlock bypass command sequences.
START
Embedded
Program
algorithm
in progress
trols or timings during these operations. Table 16,
“Command Definitions,” on page 40 shows the address
and data requirements for the chip erase command
sequence.
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase
time-out of no less than 50 µs occurs. During the
time-out period, additional sector addresses and sector
erase commands may be written. Loading the sector
erase buffer may be done in any sequence, and the
number of sectors may be from one sector to all sectors. The time between these additional cycles must be
less than 50 µs, otherwise erasure may begin. Any
sector erase address and command following the
exceeded time-out may or may not be accepted. It is
recommended that processor interrupts be disabled
during this time to ensure all commands are accepted.
Am42BDS6408H
35
A D V A N C E
I N F O R M A T I O N
The interrupts can be re-enabled after the last Sector
Erase command is written. Any command other than
Sector Erase or Erase Suspend during the time-out
period resets that bank to the read mode. The system
must rewrite the command sequence and any additional addresses and commands.
this command. This command is valid only during the
sector erase operation, including the minimum 50 µs
time-out period during the sector erase command
sequence. The Erase Suspend command is ignored if
written during the chip erase operation or Embedded
Program algorithm.
The system can monitor DQ3 to determine if the sector
erase timer has timed out (See “DQ3: Sector Erase
Timer” section on page 46.) The time-out begins from
the rising edge of the final WE# pulse in the command
sequence.
When the Erase Suspend command is written during
the sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded Erase
operation is in progress, the system can read data from
the non-erasing bank. The system can determine the
status of the erase operation by reading DQ7 or
DQ6/DQ2 in the erasing bank. Refer to the “Write
Operation Status” section on page 43 for information
on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that
occurs, the sector erase command sequence should
be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
The host system may also initiate the sector erase
command sequence while the device is in the unlock
bypass mode. The command sequence is four cycles
cycles in length instead of six cycles.
Figure 5, “Erase Operation,” on page 37 illustrates the
algorithm for the erase operation. Refer to the
Erase/Program Operations table in the Figure , “AC
Characteristics,” on page 65 for parameters and timing
diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system
to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. The bank address is required when writing
36
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The
system can read data from or program data to any
sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any
address within erase-suspended sectors produces
status information on DQ7–DQ0. The system can use
DQ7, or DQ6 and DQ2 together, to determine if a
sector is actively erasing or is erase-suspended. Refer
to the Figure , “Write Operation Status,” on page 43 for
information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard program operation. Refer to the
“Write Operation Status” section on page 43 for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
“ A m 4 2 B D S 6 4 0 8 H B o o t S e c t o r / S e c t o r B l o ck
Addresses for Protection/Unprotection” section on
page 16 and “Autoselect Command Sequence” section
on page 33 for details.
To resume the sector erase operation, the system must
write the Erase Resume command. The bank address
of the erase-suspended bank is required when writing
this command. Further writes of the Resume command
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
are ignored. Another Erase Suspend command can be
written after the chip has resumed erasing.
from the factory. All 64-bit password combinations are
valid as a password.
Password Verify Command
START
The Password Verify Command is used to verify the
Password. The Password is verifiable only when the
Password Mode Locking Bit is not programmed. If the
Password Mode Locking Bit is programmed and the
user attempts to verify the Password, the device will always drive all F’s onto the DQ data bus.
Write Erase
Command Sequence
Data Poll
from System
No
Also, the device will not operate in Simultaneous Operation when the Password Verify command is executed.
Only the password is returned regardless of the bank
address. The lower two address bits (A1–A0) are valid
during the Password Verify. Writing the Read/Reset
command returns the device back to normal operation.
Embedded
Erase
algorithm
in progress
Data = FFh?
Password Protection Mode Locking Bit
Program Command
Yes
Erasure Completed
Notes:
1. See Table 16 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 5.
Erase Operation
Password Program Command
The Password Program Command permits programming the password that is used as part of the hardware protection scheme. The actual password is
64-bits long. 4 Password Program commands are required to program the password. The user must enter
the unlock cycle, password program command (38h)
and the program address/data for each portion of the
password when programming. There are no provisions
for entering the 2-cycle unlock cycle, the password
program command, and all the password data. There
is no special addressing order required for programming the password. Also, when the password is undergoing programming, Simultaneous Operation is
disabled. Read operations to any memory location will
return the programming status. Once programming is
complete, the user must issue a Read/Reset command to return the device to normal operation. Once
the Password is written and verified, the Password
Mode Locking Bit must be set in order to prevent verification. The Password Program Command is only capable of programming “0”s. Programming a “1” after a
cell is programmed as a “0” results in a time-out by the
Embedded Program Algorithm™ with the cell remaining as a “0”. The password is all F’s when shipped
October 23, 2003
The Password Protection Mode Locking Bit Program
Command programs the Password Protection Mode
Locking Bit, which prevents further verifies or updates
to the Password. When the Password Protection Mode
Locking Bit is undergoing programming, Simultaneous
Operation is disabled. Once programmed, the Password Protection Mode Locking Bit cannot be erased! If
the Password Protection Mode Locking Bit is verified
as program without margin, the Password Protection
Mode Locking Bit Program command can be executed
to improve the program margin. Once the Password
Protection Mode Locking Bit is programmed, the Persistent Sector Protection Locking Bit program circuitry
is disabled, thereby forcing the device to remain in the
Password Protection mode. Exiting the Mode Locking
Bit Program command is accomplished by writing the
Read/Reset command.
Persistent Sector Protection Mode
Locking Bit Program Command
The Persistent Sector Protection Mode Locking Bit
Program Command programs the Persistent Sector
Protection Mode Locking Bit, which prevents the Password Mode Locking Bit from ever being programmed.
If the Persistent Sector Protection Mode Locking Bit is
verified as programmed without margin, the Persistent
Sector Protection Mode Locking Bit Program Command should be reissued to improve program margin.
By disabling the program circuitry of the Password
Mode Locking Bit, the device is forced to remain in the
Persistent Sector Protection mode of operation, once
this bit is set. Exiting the Persistent Protection Mode
Locking Bit Program command is accomplished by
writing the Read/Reset command. When the Persistent Sector Protection Mode Locking Bit is undergoing
programming, Simultaneous Operation is disabled.
Am42BDS6408H
37
A D V A N C E
I N F O R M A T I O N
SecSi Sector Protection Bit Program
Command
The SecSi Sector Protection Bit Program Command
programs the SecSi Sector Protection Bit, which prevents the SecSi sector memory from being cleared. If
the SecSi Sector Protection Bit is verified as programmed without margin, the SecSi Sector Protection
Bit Program Command should be reissued to improve
program margin. Exiting the VCC -level SecSi Sector
Protection Bit Program Command is accomplished by
writing the Read/Reset command.
PPB Lock Bit Set Command
The PPB Lock Bit Set command is used to set the
PPB Lock bit if it is cleared either at reset or if the
Password Unlock command was successfully executed. There is no PPB Lock Bit Clear command.
Once the PPB Lock Bit is set, it cannot be cleared unless the device is taken through a power-on clear or
the Password Unlock command is executed. Upon setting the PPB Lock Bit, the PPBs are latched into the
DYBs. If the Password Mode Locking Bit is set, the
PPB Lock Bit status is reflected as set, even after a
power-on reset cycle. Exiting the PPB Lock Bit Set
command is accomplished by writing the Read/Reset
command, only while in the Persistent Sector Protection Mode.
DYB Write Command
The DYB Write command is used to set or clear a DYB
for a given sector. The high order address bits
(A21–A12) are issued at the same time as the code
01h or 00h on DQ7-DQ0. All other DQ data bus pins
are ignored during the data write cycle. The DYBs are
modifiable at any time, regardless of the state of the
PPB or PPB Lock Bit. The DYBs are cleared at
power-up or hardware reset. Exiting the DYB Write
command is accomplished by writing the Read/Reset
command.
Password Unlock Command
The Password Unlock command is used to clear the
PPB Lock Bit so that the PPBs can be unlocked for
modification, thereby allowing the PPBs to become accessible for modification. The exact password must be
entered in order for the unlocking function to occur.
This command cannot be issued any faster than 2 µs
at a time to prevent a hacker from running through the
all 64-bit combinations in an attempt to correctly match
a password. If the command is issued before the 2 µs
execution window for each portion of the unlock, the
command will be ignored.
The Password Unlock function is accomplished by
writing Password Unlock command and data to the device to perform the clearing of the PPB Lock Bit. The
password is 64 bits long, so the user must write the
38
Password Unlock command 4 times. A1 and A0 are
used for matching. Writing the Password Unlock command is not address order specific. The lower address
A1–A0= 00, the next Password Unlock command is to
A1–A0= 01, then to A1–A0= 10, and finally to A1–A0=
11.
Once the Password Unlock command is entered for all
four words, the RDY pin goes LOW indicating that the
device is busy. Approximately 1uSec is required for
each portion of the unlock. Once the first portion of the
password unlock completes (RDY is not driven and
DQ6 does not toggle when read), the Password Unlock command is issued again, only this time with the
next part of the password. Four Password Unlock commands are required to successfully clear the PPB
Lock Bit. As with the first Password Unlock command,
the RDY signal goes LOW and reading the device results in the DQ6 pin toggling on successive read operations until complete. It is the responsibility of the
microprocessor to keep track of the number of Password Unlock commands, the order, and when to read
the PPB Lock bit to confirm successful password unlock. In order to relock the device into the Password
Mode, the PPB Lock Bit Set command can be re-issued.
PPB Program Command
The PPB Program command is used to program, or
set, a given PPB. Each PPB is individually programmed (but is bulk erased with the other PPBs).
The specific sector address (A21–A12) are written at
the same time as the program command 60h with A6
= 0. If the PPB Lock Bit is set and the corresponding
PPB is set for the sector, the PPB Program command
will not execute and the command will time-out without
programming the PPB.
After programming a PPB, two additional cycles are
needed to determine whether the PPB has been programmed with margin. If the PPB has been programmed without margin, the program command
should be reissued to improve the program margin.
The PPB Program command does not follow the Embedded Program algorithm.
All PPB Erase Command
The All PPB Erase command is used to erase all
PPBs in bulk. There is no means for individually erasing a specific PPB. Unlike the PPB program, no specific sector address is required. However, when the
PPB erase command is written (60h) and A6 = 1, all
Sector PPBs are erased in parallel. If the PPB Lock Bit
is set the ALL PPB Erase command will not execute
and the command will time-out without erasing the
PPBs. After erasing the PPBs, two additional cycles
are needed to determine whether the PPB has been
erased with margin. If the PPBs has been erased with-
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
out margin, the erase command should be reissued to
improve the program margin.
bit, removing power or resetting the device will clear
the DYBs.
It is the responsibility of the user to preprogram all
PPBs prior to issuing the All PPB Erase command. If
the user attempts to erase a cleared PPB, over-erasure may occur making it difficult to program the PPB
at a later time. Also note that the total number of PPB
program/erase cycles is limited to 100 cycles. Cycling
the PPBs beyond 100 cycles is not guaranteed.
PPB Status Command
DYB Write Command
The DYB Write command is used for setting the DYB,
which is a volatile bit that is cleared at hardware reset.
There is one DYB per sector. If the PPB is set, the sector is protected regardless of the value of the DYB. If
the PPB is cleared, setting the DYB to a 1 protects the
sector from programs or erases. Since this is a volatile
October 23, 2003
The programming of the PPB for a given sector can be
verified by writing a PPB status verify command to the
device.
PPB Lock Bit Status Command
The programming of the PPB Lock Bit for a given sector can be verified by writing a PPB Lock Bit status verify command to the device.
DYB Status Command
The programming of the DYB for a given sector can be
verified by writing a DYB Status command to the device.
Am42BDS6408H
39
A D V A N C E
I N F O R M A T I O N
Command Definitions
Command Sequence
(Note 1)
Cycles
Table 16.
Command Definitions
Bus Cycles (Notes 1–6)
First
Second
Third
1
RA
RD
Reset (Note 8)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
Device ID
6
555
AA
2AA
55
Sector Lock Verify (Note
10)
4
555
AA
2AA
55
Indicator Bits (Note 11)
4
555
AA
2AA
55
Program
4
555
AA
2AA
55
555
Chip Erase
6
555
AA
2AA
55
555
Sector Erase
6
555
AA
2AA
55
555
Erase Suspend (Note 14)
1
BA
B0
Erase Resume (Note 15)
1
BA
30
Set Configuration Register (Note 16)
3
555
AA
2AA
55
Autoselect (Note 9)
Asynchronous Read (Note 7)
CFI Query (Note 17)
Unlock
Bypass
Mode
Fourth
Addr Data Addr Data Addr Data Addr
1
55
98
Unlock Bypass Entry
3
555
AA
2AA
55
Unlock Bypass Program
(Notes 12, 13)
2
XX
A0
PA
PD
Unlock Bypass Sector
Erase (Notes 12, 13)
2
XX
80
SA
30
Unlock Bypass Erase
(Notes 12, 13)
2
XX
80
XXX
10
Unlock Bypass CFI
(Notes 12, 13)
1
XX
98
Unlock Bypass Reset
2
XX
XXX
00
90
(BA)
555
(BA)
555
(SA)
555
(BA)
555
(CR)
555
555
90
90
90
(BA)
X00
(BA)
X01
(SA)
X02
(BA)
Data
Fifth
Sixth
0001
227E
(BA)
(BA)
221E
2201
X0E
X0F
(Note
10)
X03
(Note
11)
A0
PA
Data
80
555
AA
2AA
55
555
10
80
555
AA
2AA
55
SA
30
(SA)
OW
48
OW
RD
(0)
XX1
PD1
XX2
PD2
90
Seventh
Addr Data Addr Data Addr Data
C0
20
Sector Protection Command Definitions
SecSi
Sector
SecSi Sector Entry
3
555
AA
2AA
55
555
88
SecSi Sector Exit
4
555
AA
2AA
55
555
90
XX
00
SecSi Protection Bit
Program (Notes 18, 19,
21)
6
555
AA
2AA
55
555
60
(SA)
OW
68
XX0
PD0
XX1
PD1
XX2
PD2
XX3
PD3
XX0
PD0
XX1
PD1
XX2
PD2
XX3
PD3
XX0
PD0
Password Program
(Notes 18, 23)
4
555
AA
2AA
55
555
38
Password
Protection
Password Verify
Password Unlock (Note
23)
40
4
7
555
555
AA
AA
2AA
2AA
55
55
555
555
C8
28
Am42BDS6408H
XX3
PD3
October 23, 2003
Command Sequence
(Note 1)
PPB
Command
s
PPB Lock
Bit
Cycles
A D V A N C E
I N F O R M A T I O N
Bus Cycles (Notes 1–6)
First
Second
Third
Fourth
Addr Data Addr Data Addr Data Addr
Data
Fifth
Sixth
PPB Program (Notes 18,
19, 21)
6
555
AA
2AA
55
555
60
(SA)
+ WP
68
(SA)
+ WP
48
XX
RD
(0)
All PPB Erase (Notes
18, 19, 22, 24)
6
555
AA
2AA
55
555
60
WP
60
WP
40
XX
RD
(0)
PPB Status (Note 25)
4
555
AA
2AA
55
(BA)
555
90
(SA)
X02
RD
(0)
PPB Lock Bit Set
3
555
AA
2AA
55
555
78
55
(BA)
555
58
SA
RD
(1)
PPB Lock Bit Status
(Note 19)
4
555
AA
2AA
DYB Write
4
555
AA
2AA
55
555
48
SA
X1
DYB Erase
4
555
AA
2AA
55
555
48
SA
X0
DYB Status
4
555
AA
2AA
55
(BA)
555
58
SA
RD
(0)
Password Protection Mode Locking
Bit Program (Notes 18, 19, 21)
6
555
AA
2AA
55
555
60
PL
68
PL
48
PL
RD
(0)
Persistent Protection Mode Locking
Bit Program (Notes 18, 19, 21)
6
555
AA
2AA
55
555
60
SL
68
SL
48
SL
RD
(0)
Password Protection Mode Locking
Bit Read (Notes 18, 19, 21)
4
555
AA
2AA
55
555
60
PL
RD
(0)
Persistent Protection Mode Locking
Bit Read (Notes 18, 19, 21)
4
555
AA
2AA
55
555
60
SL
RD
(0)
DYB
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the rising edge of the AVD# pulse or active edge of CLK which
ever comes first.
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A21–A12 uniquely select any sector.
BA = Address of the bank (A21, A20, A19) that is being switched to
autoselect mode, is in bypass mode, or is being erased.
SLA = Address of the sector to be locked. Set sector address (SA) and
either A6 = 1 for unlocked or A6 = 0 for locked.
CR = Configuration Register address bits A19–A12.
OW = Address (A7–A0) is (00011010).
PD3–PD0 = Password Data. PD3–PD0 present four 16 bit
combinations that represent the 64-bit Password
PWA = Password Address. Address bits A1 and A0 are used to select
each 16-bit portion of the 64-bit entity.
PWD = Password Data.
PL = Address (A7-A0) is (00001010)
RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 1, if
unprotected, DQ0 = 0.
RD(1) = DQ1 protection indicator bit. If protected, DQ1 = 1, if
unprotected, DQ1 = 0.
SL = Address (A7-A0) is (00010010)
WD= Write Data. See “Configuration Register” definition for specific
write data
WP = Address (A7-A0) is (00000010)
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except for the following, all bus cycles are write cycle: read cycle,
fourth through sixth cycles of the Autoselect commands, fourth
cycle of the configuration register verify and password verify
commands, and any cycle reading at RD(0) and RD(1).
Seventh
Addr Data Addr Data Addr Data
Suspend) when a bank is in the autoselect mode, or if DQ5 goes
high (while the bank is providing status information) or performing
sector lock/unlock.
9.
The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address. See the
Autoselect Command Sequence section for more information.
4. Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD, PD, WD, PWD, and PD3-PD0.
10. The data is 0000h for an unlocked sector and 0001h for a locked
sector
5. Unless otherwise noted, address bits A21–A12 are don’t cares.
11. DQ15 - DQ8 = 0, DQ7: Factory Lock Bit (1 = Locked, 0 = Not
Locked), DQ6: Customer Lock Bit (1 = Locked, 0 = Not Locked),
DQ5: Handshake Bit (1 = Reduced wait-state Handshake, 0 =
Standard Handshake), DQ4 - DQ0 = 0
6. Writing incorrect address and data values or writing them in the
improper sequence may place the device in an unknown state.
The system must write the reset command to return the device to
reading array data.
7. No unlock or command cycles required when bank is reading
array data.
8. The Reset command is required to return to reading array data
(or to the erase-suspend-read mode if previously in Erase
October 23, 2003
12. The Unlock Bypass command sequence is required prior to this
command sequence.
13. The Unlock Bypass Reset command is required to return to
reading array data when the bank is in the unlock bypass mode.
Am42BDS6408H
41
A D V A N C E
I N F O R M A T I O N
14. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
21. The fourth cycle programs the addressed locking bit. The fifth and
sixth cycles are used to validate whether the bit has been fully
programmed. If DQ0 (in the sixth cycle) reads 0, the program
command must be issued and verified again.
15. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
22. The fourth cycle erases all PPBs. The fifth and sixth cycles are
used to validate whether the bits have been fully erased. If DQ0
(in the sixth cycle) reads 1, the erase command must be issued
and verified again.
16. See “Set Configuration Register Command Sequence” for details.
17. Command is valid when device is ready to read array data or
when device is in autoselect mode.
18. The Reset command returns the device to reading the array.
19. Regardless of CLK and AVD# interaction or Control Register bit
15 setting, command mode verifies are always asynchronous
read operations.
20. ACC must be at VHH during the entire operation of this command
42
23. The entire four bus-cycle sequence must be entered for each
portion of the password.
24. Before issuing the erase command, all PPBs should be
programmed in order to prevent over-erasure of PPBs.
25. In the fourth cycle, 01h indicates PPB set; 00h indicates PPB not
set.
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
WRITE OPERATION STATUS
The device provides several bits to determine the
status of a program or erase operation: DQ2, DQ3,
DQ5, DQ6, and DQ7. Table 18, “Write Operation
Status,” on page 47 and the following subsections
describe the function of these bits. DQ7 and DQ6 each
offers a method for determining whether a program or
erase operation is complete or in progress.
DQ7: Data# Polling
invalid. Valid data on DQ7-DQ0 will appear on successive read cycles.
Table 18, “Write Operation Status,” on page 47 shows
the outputs for Data# Polling on DQ7. Figure 6, “Data#
Polling Algorithm,” on page 43 shows the Data# Polling
al g or it h m. F ig u r e 37 , “ D a t a # Po l lin g T i m in g s
(During Embedded Algorithm),” on page 72 in the AC
Characteristics section shows the Data# Polling timing
diagram.
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is
in Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the command sequence.
START
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming dur ing Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then that bank returns to the read
mode.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status information on DQ7.
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 µs, then
the bank returns to the read mode. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the
selected sectors that are protected. However, if the
system reads DQ7 at an address within a protected
sector, the status may not be valid.
Just prior to the completion of an Embedded Program
or Erase operation, DQ7 may change asynchronously
with DQ6–DQ0 while Output Enable (OE#) is asserted
low. That is, the device may change from providing
status information to valid data on DQ7. Depending on
when the system samples the DQ7 output, it may read
the status or valid data. Even if the device has completed the program or erase operation and DQ7 has
valid data, the data outputs on DQ6-DQ0 may be still
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 6.
October 23, 2003
Yes
Am42BDS6408H
Data# Polling Algorithm
43
A D V A N C E
I N F O R M A T I O N
RDY: Ready
The RDY is a dedicated output that, when the device is
configured in the Synchronous mode, indicates (when
at logic low) the system should wait 1 clock cycle before
expecting the next word of data. The RDY pin is only
controlled by CE#. Using the RDY Configuration
Command Sequence, RDY can be set so that a logic
low indicates the system should wait 2 clock cycles
before expecting valid data.
The following conditions cause the RDY output to be
low: during the initial access (in burst mode), and after
the boundary that occurs every 64 words beginning
with the 64th address, 3Fh.
When the device is configured in Asynchronous Mode,
the RDY is an open-drain output pin which indicates
whether an Embedded Algorithm is in progress or completed. The RDY status is valid after the rising edge of
the final WE# pulse in the command sequence.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.) If the output is in high impedance (Ready), the device is in the read mode, the
standby mode, or in the erase-suspend-read mode.
Table 18, “Write Operation Status,” on page 47 shows
the outputs for RDY.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address in the
same bank, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
cause DQ6 to toggle. When the operation is complete,
DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles
for approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase
Suspend mode, DQ6 stops toggling. However, the
system must also use DQ2 to determine which sectors
are erasing or erase-suspended. Alternatively, the
system can use DQ7 (see the subsection on DQ7:
Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 ms after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded
Program algorithm is complete.
See the following for additional information: Figure 7,
“Toggle Bit Algorithm,” on page 45, “DQ6: Toggle Bit I”
o n p a g e 4 4 , F i g u r e 3 8 , “ To g g l e B i t T i m i n g s
(During Embedded Algorithm),” on page 72 (toggle bit
timing diagram), and Table 17, “DQ6 and DQ2 Indications,” on page 46.
Toggle Bit I on DQ6 requires either OE# or CE# to be
de-asserted and reasserted to show the change in
state.
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address
44
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. But DQ2 cannot distinguish whether the sector is
actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both
status bits are required for sector and mode information. Refer to Table 17, “DQ6 and DQ2 Indications,” on
page 46 to compare outputs for DQ2 and DQ6.
START
Read Byte
(DQ7-DQ0)
Address = VA
Read Byte
(DQ7-DQ0)
Address = VA
DQ6 = Toggle?
See the following for additional information: Figure 7,
“Toggle Bit Algorithm,” on page 45, “DQ6: Toggle Bit I”
o n p a g e 4 4 , F i g u r e 3 8 , “ To g g l e B i t T i m i n g s
(During Embedded Algorithm),” on page 72, and
Table 17, “DQ6 and DQ2 Indications,” on page 46.
No
Yes
No
DQ5 = 1?
Yes
Read Byte Twice
(DQ7-DQ0)
Adrdess = VA
DQ6 = Toggle?
No
Yes
FAIL
PASS
Note:The system should recheck the toggle bit even if DQ5 =
“1” because the toggle bit may stop toggling as DQ5 changes
to “1.” See the subsections on DQ6 and DQ2 for more
information.
Figure 7.
Toggle Bit Algorithm
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
October 23, 2003
Am42BDS6408H
45
A D V A N C E
Table 17.
I N F O R M A T I O N
DQ6 and DQ2 Indications
If device is
and the system reads
then DQ6
and DQ2
programming,
at any address,
toggles,
does not toggle.
at an address within a sector
selected for erasure,
toggles,
also toggles.
at an address within sectors not
selected for erasure,
toggles,
does not toggle.
at an address within a sector
selected for erasure,
does not toggle,
toggles.
at an address within sectors not
selected for erasure,
returns array data,
returns array data. The system can read
from any sector not selected for erasure.
at any address,
toggles,
is not applicable.
actively erasing,
erase suspended,
programming in
erase suspend
Reading Toggle Bits DQ6/DQ2
DQ5: Exceeded Timing Limits
Refer to Figure 7, “Toggle Bit Algorithm,” on page 45 for
the following discussion. Whenever the system initially
begins reading toggle bit status, it must read DQ7–DQ0
at least twice in a row to determine whether a toggle bit
is toggling. Typically, the system would note and store
the value of the toggle bit after the first read. After the
second read, the system would compare the new value
of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase
operation. The system can read array data on
DQ7–DQ0 on the following read cycle.
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1,” indicating that
the program or erase cycle was not successfully completed.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is
high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the
device did not completed the operation successfully,
and the system must write the reset command to return
to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to
determine the status of the operation (Figure 7, “Toggle
Bit Algorithm,” on page 45).
46
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a
“0” back to a “1.” Under this condition, the device halts
the operation, and when the timing limit has been
exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write the
reset command to return to the read mode (or to the
erase-suspend-read mode if a bank was previously in
the erase-suspend-program mode).
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional sectors
are selected for erasure, the entire time-out also
applies after each additional sector erase command.
When the time-out period is complete, DQ3 switches
from a “0” to a “1.” If the time between additional sector
erase commands from the system can be assumed to
be less than 50 µs, the system need not monitor DQ3.
See also “Sector Erase Command Sequence” on
page 35.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all
further commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
device will accept additional sector erase commands.
To ensure the command has been accepted, the
system software should check the status of DQ3 prior
to and following each subsequent sector erase com-
Table 18.
Erase
Suspend
Mode
Write Operation Status
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RDY (Note
5)
DQ7#
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
High
Impedance
Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
High
Impedance
DQ7#
Toggle
0
N/A
N/A
0
Embedded Program Algorithm
Embedded Erase Algorithm
Erase-SuspendRead (Note 4)
Table 18 shows the status of DQ3 relative to the other
status bits.
DQ7
(Note 2)
Status
Standard
Mode
mand. If DQ3 is high on the second status check, the
last command might not have been accepted.
Erase-Suspend-Program
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
4. The system may read either asynchronously or synchronously (burst) while in erase suspend.
5. The RDY pin acts a dedicated output to indicate the status of an embedded erase or program operation is in progress. This
is available in the Asynchronous mode only.
October 23, 2003
Am42BDS6408H
47
A D V A N C E
I N F O R M A T I O N
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground:
All Inputs and I/Os except
as noted below (Note 1) . . . . . . . –0.5 V to VIO + 0.5 V
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
VCC (Note 1) . . . . . . . . . . . . . . . . . . –0.5 V to +2.5 V
20 ns
VIO . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to +2.5 V
A9, RESET#, ACC (Note 1) . . . . . –0.5 V to +12.5 V
Output Short Circuit Current (Note 3) . . . . . . 100 mA
Notes:
1. Minimum DC voltage on input or I/Os is –0.5 V. During
voltage transitions, inputs or I/Os may undershoot VSS to
–2.0 V for periods of up to 20 ns. See Figure 8. Maximum
DC voltage on input or I/Os is VCC + 0.5 V. During voltage
transitions outputs may overshoot to VCC + 2.0 V for
periods up to 20 ns. See Figure 9.
2. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
3. Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only; functional operation of the device at these or any other conditions above those indicated
in the operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 8. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
1.0 V
20 ns
20 ns
Figure 9. Maximum Positive
Overshoot Waveform
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Supply Voltages
VCC Supply Voltages . . . . . . . . . . .+1.65 V to +1.95 V
. . . . . . . . . . . . . . . . . . . . . . . . . . VCC >= VIO - 100mV
VIO Supply Voltages: . . . . . . . . . . +1.65 V to +1.95 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
48
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
DC CHARACTERISTICS
CMOS COMPATIBLE
Parameter Description
Test Conditions Note: 1 & 2
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
µA
ICCB
VCC Active burst Read Current
CE# = VIL, OE# = VIH,
WE# = VIH, burst length
=8
54 MHz
9
17
mA
CE# = VIL, OE# = VIH,
WE# = VIH, burst length
= 16
54 MHz
8
15.5
mA
CE# = VIL, OE# = VIH,
WE# = VIH, burst length
= Continuous
54 MHz
7
14
mA
CE# = VIL, OE# = VIH, WE# = VIH,
burst length = 8
50
200
µA
0.2
10
µA
10 MHz
TBD
TBD
mA
5 MHz
12
16
mA
1 MHz
3.5
5
mA
IIO1
VIO Non-active Output
OE# = VIH
ICC1
VCC Active Asynchronous Read
Current (Note 3)
CE# = VIL, OE# = VIH,
WE# = VIH
ICC2
VCC Active Write Current (Note 4)
CE# = VIL, OE# = VIH, ACC = VIH
15
40
mA
ICC3
VCC Standby Current (Note 5)
CE# = RESET# = VCC ± 0.2 V
1
40
µA
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
1
40
µA
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIH
25
60
mA
ICC6
VCC Sleep Current
CE# = VIL, OE# = VIH
1
40
µA
Accelerated Program Current
(Note 6)
CE# = VIL, OE# = VIH,
VACC = 12.0 ± 0.5 V
VACC
7
15
mA
IACC
VCC
5
10
mA
V
VIO = 1.8 V
–0.4
0.4
VIO = 1.5 V
TBD
TBD
VIO = 1.8 V
VIO – 0.4
VIO + 0.4
VIO = 1.5 V
TBD
TBD
V
0.1
V
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
IOL = 100 µA, VIO = VCC = VCC min
VOH
Output High Voltage
IOH = –100 µA, VIO = VCC = VCC min
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 1.8
VHH
VLKO
VIO – 0.1
V
11.5
12.5
V
Voltage for Accelerated Program
11.5
12.5
V
Low VCC Lock-out Voltage
1.0
1.4
V
Note:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. VIO= VCC
3. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3.
6. Total current during accelerated programming is the sum of VACC and VCC currents.
October 23, 2003
Am42BDS6408H
49
A D V A N C E
I N F O R M A T I O N
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Leakage Current
VIN = VSS to VCC
–1.0
1.0
µA
ILO
Output Leakage Current
CE1#s = VIH, CE2s = VIL or OE# =
VIH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
ICC
Operating Power Supply Current
IIO = 0 mA, CE1#s = VIL, CE2s =
WE# = VIH, VIN = VIH or VIL
5
mA
ICC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
IIO = 0 mA, CE1#s ≤ 0.2 V,
CE2 ≥ VCC – 0.2 V, VIN ≤ 0.2 V or
VIN ≥ VCC – 0.2 V
1
5
mA
ICC2s
Average Operating Current
Cycle time = Min., IIO = 0 mA,
100% duty, CE1#s = VIL, CE2s =
VIH, VIN = VIL = or VIH
8
15
mA
VOL
Output Low Voltage
IOL = 0.1 mA
0.2
V
VOH
Output High Voltage
IOH = –0.1 mA
ISB1
Standby Current (CMOS)
CE1#s ≥ VCC – 0.2 V, CE2 ≥ VCC
– 0.2 V (CE1#s controlled) or CE2
≤ 0.2 V (CE2s controlled), CIOs =
VSS or VCC, Other input = 0 ~ VCC
VIL
Input Low Voltage
VIH
Input High Voltage
1.4
V
2
25
µA
–0.2
(Note 2)
0.4
V
1.4
VCC+0.
2
(Note 3)
V
Notes:
1. Typical values measured at VCC = 2.0 V, TA = 25°C. Not 100% tested.
2. Undershoot is –1.0 V when pulse width ≤ 20 ns.
3. Overshoot is VCC + 1.0 V when pulse width ≤ 20 ns.
4. Overshoot and undershoot are sampled, not 100% tested.
50
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
TEST CONDITIONS
Table 19.
Device
Under
Test
Test Condition
All Speed Options
Unit
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
0.0–VIO
V
Input timing measurement
reference levels
VIO/2
V
Output timing measurement
reference levels
VIO/2
V
Input Pulse Levels
CL
Figure 10.
Test Specifications
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
SWITCHING WAVEFORMS
All Inputs and Outputs
VIO
Input
VIO/2
Measurement Level
VIO/2
Output
0.0 V
Figure 11.
October 23, 2003
Input Waveforms and Measurement Levels
Am42BDS6408H
51
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
VCC Power-up
Parameter
Description
Test Setup
Speed
Unit
tVCS
VCC Setup Time
Min
50
µs
tVIOS
VIO Setup Time
Min
50
µs
tRSTH
RESET# Low Hold Time
Min
50
µs
tVCS
VCC
tVIOS
VIO
tRSTH
RESET#
Figure 12.
52
VCC Power-up Diagram
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
Synchronous/Burst Read (VIO = 1.8 V)
Parameter
JEDEC
Standard Description
E6, E7,
E8, E9
(66 MHz)
D6, D7,
D8, D9
(54 MHz)
Unit
tIACC
Latency (Even address in Reduced wait-state
Handshake mode)
Max
56
69
ns
tIACC
Latency (Standard Handshake or Odd address in
Reduced wait-state Handshake mode
Max
71
87.5
ns
tBACC
Burst Access Time Valid Clock to Output Delay
Max
11
13.5
ns
tACS
Address Setup Time to CLK (Note 1)
Min
4
5
ns
tACH
Address Hold Time from CLK (Note 1)
Min
6
7
ns
tBDH
Data Hold Time from Next Clock Cycle
Min
3
4
ns
tCR
Chip Enable to RDY Valid
Max
11
13.5
ns
tOE
Output Enable to Output Valid
Max
11
13.5
ns
tCEZ
Chip Enable to High Z
Max
8
10
ns
tOEZ
Output Enable to High Z
Max
8
10
ns
tCES
CE# Setup Time to CLK
Min
4
5
ns
tRDYS
RDY Setup Time to CLK
Min
4
5
ns
tRACC
Ready Access Time from CLK
Max
11
13.5
ns
tAAS
Address Setup Time to AVD# (Note 1)
Min
4
5
ns
tAAH
Address Hold Time to AVD# (Note 1)
Min
6
7
ns
tCAS
CE# Setup Time to AVD#
Min
tAVC
AVD# Low to CLK
Min
4
5
ns
tAVD
AVD# Pulse
Min
10
12
ns
tACC
Access Time
Max
50
55
ns
tCKA
CLK to access resume
Max
11
13.5
ns
tCKZ
CLK to High Z
Max
8
10
ns
tOES
Output Enable Setup Time
Min
4
5
ns
tRCC
Read cycle for continuous suspend
Max
0
1
ns
ms
Notes:
1. Addresses are latched on the first of either the active edge of CLK or the rising edge of AVD#.
2. Please contact AMD for availability of VIO = 1.5 V devices.
October 23, 2003
Am42BDS6408H
53
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tCES
CE#
tCEZ
7 cycles for initial access shown.
1
2
3
4
5
6
7
CLK
tAVC
AVD#
tAVD
tACS
tBDH
Addresses
Aa
tBACC
tACH
Hi-Z
Data
tIACC
Da
Da + 1
Da + n
tACC
tOEZ
OE#
tCR
RDY
tRACC
tOE
Hi-Z
Hi-Z
tRDYS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two
cycles to seven cycles.
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 13.
CLK Synchronous Burst Mode Read (rising active CLK)
tCES
CE#
1
tCEZ
4 cycles for initial access shown.
2
3
4
5
CLK
tAVC
AVD#
tAVD
tACS
tBDH
Addresses
Aa
tBACC
tACH
Hi-Z
Data
tIACC
tACC
Da
Da + 1
Da + n
tOEZ
OE#
Hi-Z
tOE
tCR
tRACC
Hi-Z
RDY
tRDYS
Notes:
1. Figure shows total number of wait states set to four cycles. The total number of wait states can be programmed from two
cycles to seven cycles. Clock is set for active falling edge.
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 14.
54
CLK Synchronous Burst Mode Read (Falling Active Clock)
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tCEZ
7 cycles for initial access shown.
tCAS
CE#
1
2
3
4
5
6
7
CLK
tAVC
AVD#
tAVD
tAAS
Addresses
tBDH
Aa
tBACC
tAAH
Hi-Z
Data
tIACC
Da
Da + 1
Da + n
tACC
tOEZ
OE#
tCR
RDY
tRACC
tOE
Hi-Z
Hi-Z
tRDYS
Notes:
1. Figure shows total number of wait states set to seven cycles. The total number of wait states can be programmed from two
cycles to seven cycles. Clock is set for active rising edge.
2. If any burst address occurs at a 64-word boundary, two additional clock cycle are inserted, and is indicated by RDY.
3. The device is in synchronous mode.
Figure 15.
tCES
Synchronous Burst Mode Read
7 cycles for initial access shown.
CE#
1
2
3
4
5
6
7
CLK
tAVC
AVD#
tAVD
tACS
tBDH
Addresses
A6
tBACC
tACH
Data
tIACC
D6
D7
D0
D1
D5
D6
tACC
OE#
tCR
RDY
tOE
tRACC
Hi-Z
tRDYS
Note: Figure assumes 7 wait states for initial access and automatic detect synchronous read. D0–D7 in data waveform indicate
the order of data within a given 8-word address range, from lowest to highest. Starting address in figure is the 7th address in
range (A6). See “Requirements for Synchronous (Burst) Read Operation”. The Set Configuration Register command sequence
has been written with A18=1; device will output RDY with valid data.
Figure 16.
October 23, 2003
8-word Linear Burst with Wrap Around
Am42BDS6408H
55
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
tCES
tCEZ
6 wait cycles for initial access shown.
CE#
1
2
3
4
5
6
CLK
tAVC
AVD#
tAVD
tACS
Addresses
tBDH
Aa
tBACC
tACH
Hi-Z
Data
tIACC
D0
tACC
RDY
D2
D3
Da + n
tOEZ
tRACC
OE#
tCR
D1
tOE
Hi-Z
Hi-Z
tRDYS
Note: Figure assumes 6 wait states for initial access and synchronous read. The Set Configuration Register command sequence
has been written with A18=0; device will output RDY one cycle before valid data.
Figure 17.
56
Linear Burst with RDY Set One Cycle Before Data
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Suspend
Resume
x
x+2
x+1
x+3
x+4
x+5
x+6
x+7
x+8
CLK
AVD#
tOES
tOES
Addresses
tCKA
tCKZ
OE#
Data
D(20)
D(20)
D(21)
D(22)
D(23)
D(23)
D(23)
D(24)
RDY
tRACC
tRACC
Note: Figure is for any even address other than 3Eh (or multiple thereof).
Figure 18.
Reduced Wait-state Handshake Burst Suspend/Resume at an even address
Suspend
Resume
x
x+2
x+1
x+3
x+4
x+5
x+6
x+7
x+8
CLK
AVD#
tOES
tOES
Addresses
tCKZ
OE#
Data
D(23)
D(23)
RDY
tCKA
tRACC
D(24)
D(25)
D(25)
D(25)
D(26)
D(27)
tRACC
Note: Figure is for any odd address other than 3Fh (or multiple thereof).
Figure 19.
October 23, 2003
Reduced Wait-state Handshake Burst Suspend/Resume at an odd address
Am42BDS6408H
57
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Resume
Suspend
x+2
x+1
x
x+3
x+4
x+5
x+7
x+6
x+8
x+9
x+10
CLK
AVD#
tOES
tOES
Addresses
OE#
Data
RDY
Figure 20.
tCKA
tCKZ
D(3E)
D(3E)
D(3F)
D(3F)
D(40)
D(3F)
D(41)
D(42)
D(41)
D(41)
D(41)
tRACC
tRACC
Reduced Wait-state Handshake Burst Suspend/Resume at address 3Eh (or offset from 3Eh)
Resume
Suspend
x
x+2
x+1
x+3
x+4
x+5
x+7
x+6
x+8
x+9
x+10
CLK
AVD#
tOES
tOES
Addresses
OE#
Data
RDY
tRACC
Figure 21.
58
tCKZ
D(3F)
tCKA
D(3F)
D(3F)
D(3F)
D(40)
D(41)
D(41)
D(41)
D(42)
D(41)
D(43)
tRACC
tRACC
Reduced Wait-state Handshake Burst Suspend/Resume at address 3Fh (or offset from 3Fh by
a multiple of 64)
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Resume
Suspend
1
CLK
2
3
6
5
4
x
7
x+2
x+1
x+3
x+4
x+6
x+5
x+7
x+8
AVD#
tOES
Addresses
tOES
A(n)
tCKA
OE#
Data(1)
tACC
RDY(1)
D(n)
D(n+1)
D(n+2)
3F
3F
D(3F)
D(40)
D(n)
D(n+1)
D(n+2)
D(n+3)
D(n+4)
D(n+5)
D(n+6)
tRACC
Data(2)
RDY(2)
tRACC
Note: Figure assumes 6 wait states for initial access and synchronous read. The Set Configuration Register command sequence
has been written with A18=0; device will output RDY with valid data.
1) RDY goes low during the two-cycle latency during a boundary crossing.
2) RDY stays high when a burst sequence crosses no boundaries.
Figure 22.
Standard Handshake Burst Suspend prior to Initial Access
Resume
Suspend
CLK
1
2
3
4
6
5
7
8
9
x
x+2
x+1
x+3
AVD#
tOES
Addresses
tOES
tOES
A(n)
tCKA
OE#(1)
tCKA
tCKZ
D(n)
Data(1)
D(n)
D(n+1)
D(n+1)
D(n+2)
tACC
tRACC
RDY(1)
tRACC
tRACC
OE#(2)
Data(2)
D(n)
D(n+1)
tRACC
RDY(2)
tRACC
tRACC
Note: Figure assumes 6 wait states for initial access and synchronous read. The Set Configuration Register command sequence
has been written with A18=0; device will output RDY with valid data.
1) Burst suspend during the initial synchronous access
2) Burst suspend after one clock cycle following the initial synchronous access
Figure 23.
October 23, 2003
Standard Handshake Burst Suspend at or after Inital Access
Am42BDS6408H
59
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Resume
Suspend
CLK
1
2
3
4
6
5
7
8
x
9
x+2
x+1
x+5
x+4
x+3
AVD#
tOES
tOES
Addresses
tOES
A(3D)
tCKA
tCKA
OE#
Data
tCKZ
D(3D)
D(3E)
D(3F)
D(3F)
D(3F)
D(3F)
D(4D)
tACC
tRACC
tRACC
tRACC
RDY
Note: Figure assumes 6 wait states for initial access and synchronous read. The Set Configuration Register command sequence
has been written with A18=0; device will output RDY with valid data.
Figure 24.
Standard Handshake Burst Suspend at address 3Fh (starting address 3Dh or earlier)
Resume
Suspend
CLK
1
2
3
4
5
6
AVD#
Addresses(1)
OE#
7
8
tOES
x
x+1
x+2
x+3
x+4
x+5
x+6
tOES
A(3E)
tOES
tCKA
tCKZ
D(3E)
D(3E)
Data(1)
D(3F)
D(40)
D(41)
D(42)
D(40)
D(41)
D(42)
D(43)
tACC
tRACC
RDY(1)
Addresses(2)
tRACC
A(3F)
Data(2)
RDY(2)
tRACC
D(3F)
D(3F)
tRACC
tRACC
tRACC
Note: Figure assumes 6 wait states for initial access and synchronous read. The Set Configuration Register command sequence
has been written with A18=0; device will output RDY with valid data.
1) Address is 3Eh or offset by a multiple of 64 (40h)
2) Address is 3Fh or offset by a multiple of 64 (40h)
Figure 25.
60
Standard Handshake Burst Suspend at address 3Eh/3Fh (without a valid Initial Access)
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Suspend
1
CLK
2
3
5
4
6
7
8
Resume
9
x
x+1
x+2
x+3
x+4
x+5
x+6
AVD#
tOES
Addresses(1)
tOES
A(3E)
tOES
OE#
tCKA
tCKZ
Data(1)
Addresses(2)
D(3F)
D(3E)
tACC
RDY(1)
(Even)
tRACC
D(3F)
tRACC
D(40)
D(41)
D(42)
D(41)
D(42)
D(43)
tRACC
A(3F)
Data(2)
D(3F)
RDY(2)
(Odd)
D(40)
tRACC
D(40)
tRACC
tRACC
Note: Figure assumes 6 wait states for initial access and synchronous read. The Set Configuration Register command sequence
has been written with A18=0; device will output RDY with valid data.
1) Address 3Eh or offset by a multiple of 64 (40h)
2) Address is 3Fh or offset by a multiple of 64 (40h)
Figure 26.
Standard Handshake Burst Suspend at address 3Eh/3Fh (with 1 Access CLK)
Resume
Suspend
1
CLK
2
3
5
4
6
7
x
x+2
x+1
x+3
x+4
x+5
x+6
x+7
x+8
tRCC
AVD#
tOES
Addresses
tOES
A(n)
tCKA
OE#
Data(1)
RDY
D(n)
D(n+1)
D(n+2)
D(3F)
D(3F)
D(3F)
D(40)
tACC
tRACC
Data(2)
D(n)
CE#
???
???
tRCC
Note: Figure assumes 6 wait states for initial access and synchronous read. The Set Configuration Register command sequence
has been written with A18=0; device will output RDY with valid data.
1) Device crosses a page boundary prior to tRCC
2) Device neither crosses a page boundary nor latches a new address prior to tRCC
Figure 27.
October 23, 2003
Read Cycle for Continuous Suspend
Am42BDS6408H
61
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Asynchronous Mode Read (VIO = 1.8 V)
Parameter
JEDEC Standard Description
E3, E4,
E8, E9
(66 MHz)
D6, D7,
D8, D9
(54 MHz)
Unit
tCE
Access Time from CE# Low
Max
50
TBD
ns
tACC
Asynchronous Access Time (Note 1)
Max
50
TBD
ns
tAVDP
AVD# Low Time
Min
10
12
ns
tAAVDS
Address Setup Time to Rising Edge of AVD
Min
4
5
ns
tAAVDH
Address Hold Time from Rising Edge of AVD
Min
6
7
ns
tOE
Output Enable to Output Valid
Max
11
13.5
ns
tOEH
Output Enable Hold Time
tOEZ
tCAS
Read
Min
0
Toggle and
Data# Polling
Min
8
10
ns
Output Enable to High Z (Note 2)
Max
8
10
ns
CE# Setup Time to AVD#
Min
0
ns
ns
Notes:
1. Asynchronous Access Time is from the last of either stable addresses or the falling edge of AVD#.
2. Not 100% tested.
62
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
CE#
tOE
OE#
tOEH
WE#
tCE
tOEZ
Data
Valid RD
tACC
RA
Addresses
tAAVDH
tCAS
AVD#
tAVDP
tAAVDS
Note: RA = Read Address, RD = Read Data.
Figure 28.
Asynchronous Mode Read with Latched Addresses
CE#
tOE
OE#
tOEH
WE#
tCE
Data
tOEZ
Valid RD
tACC
RA
Addresses
AVD#
Note: RA = Read Address, RD = Read Data.
Figure 29.
October 23, 2003
Asynchronous Mode Read
Am42BDS6408H
63
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed
Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded Algorithms)
to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
200
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
Note: Not 100% tested.
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
CE#, OE#
tReady
RESET#
tRP
Figure 30.
64
Reset Timings
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase/Program Operations (VIO = 1.8 V)
Parameter
JEDEC Standard Description
tAVAV
tWC
Write Cycle Time (Note 1)
tAVWL
tAS
Address Setup Time
(Notes 2, 3)
tWLAX
tAH
Address Hold Time
(Notes 2, 3)
Min
Synchronous
E6, E7,
E8, E9
(66 MHz)
D6, D7,
D8, D9
(54 MHz)
Unit
50
55
ns
4
5
Min
ns
Asynchronous
0
Synchronous
6
7
20
20
Min
Asynchronous
ns
tAVDP
AVD# Low Time
Min
10
12
ns
tDVWH
tDS
Data Setup Time
Min
20
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
Min
0
ns
tCAS
CE# Setup Time to AVD#
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
20
30
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
20
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 4)
Typ
9
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 4)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Notes 4, 5)
tELWL
0.4
Typ
sec
Chip Erase Operation (Notes 4, 5)
54
tVID
VACC Rise and Fall Time
Min
500
ns
tVIDS
VACC Setup Time (During Accelerated Programming)
Min
1
µs
tVCS
VCC Setup Time
Min
50
µs
tCS
CE# Setup Time to WE#
Min
0
ns
tAVSW
AVD# Setup Time to WE#
Min
4
5
ns
tAVHW
AVD# Hold Time to WE#
Min
4
5
ns
tACS
Address Setup Time to CLK (Notes 2, 3)
Min
4
5
ns
tACH
Address Hold Time to CLK (Notes 2, 3)
Min
6
7
ns
tAVHC
AVD# Hold Time to CLK
Min
4
5
ns
tCSW
Clock Setup Time to WE#
Min
5
ns
Notes:
1. Not 100% tested.
2. Asynchronous mode allows the Asynchronous program operation only. Synchronous mode allows both Asynchronous and Synchronous program
operation.
3. In asynchronous program operation timing, addresses are latched on the falling edge of WE# or rising edge of AVD#. In synchronous program
operation timing, addresses are latched on the first of either the falling edge of WE# or the active edge of CLK.
4. See the “Erase and Programming Performance” section for more information.
5. Does not include the preprogramming time.
October 23, 2003
Am42BDS6408H
65
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
VIH
Read Status Data
CLK
VIL
tAVDP
AVD#
tAH
tAS
Addresses
VA
PA
555h
Data
A0h
VA
In
Progress
PD
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tWHWH1
tCS
tWPH
tWC
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. CLK can be either VIL or VIH.
5. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Configuration Register.
Figure 31.
66
Asynchronous Program Operation Timings: AVD# Latched Addresses
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data
VIH
CLK
VIL
tAVSW
tAVHW
AVD#
tAVDP
tAS
tAH
Addresses
555h
VA
PA
Data
A0h
VA
In
Progress
PD
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tWHWH1
tCS
tWPH
tWC
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. CLK can be either VIL or VIH.
5. The Asynchronous programming operation is independent of the Set Device Read Mode bit in the Configuration Register.
Figure 32.
October 23, 2003
Asynchronous Program Operation Timings: WE# Latched Addresses
Am42BDS6408H
67
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data
tAVCH
CLK
tACS
tACH
AVD#
tAVDP
Addresses
VA
PA
555h
Data
A0h
VA
In
Progress
PD
Complete
tDS
tDH
tCAS
CE#
OE#
tCH
tCSW
tWP
WE#
tWHWH1
tWPH
tWC
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.
5. Either CE# or AVD# is required to go from low to high in between programming command sequences.
6. The Synchronous programming operation is dependent of the Set Device Read Mode bit in the Configuration Register. The
Configuration Register must be set to the Synchronous Read Mode.
Figure 33.
68
Synchronous Program Operation Timings: WE# Latched Addresses
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data
tAVCH
CLK
tAS
tAH
AVD#
tAVDP
Addresses
VA
PA
555h
Data
A0h
VA
In
Progress
PD
Complete
tDS
tDH
tCAS
CE#
OE#
tCH
tCSW
tWP
WE#
tWHWH1
tWPH
tWC
tVCS
VCC
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A21–A12 are don’t care during command sequence unlock cycles.
4. Addresses are latched on the first of either the rising edge of AVD# or the active edge of CLK.
5. Either CE# or AVD# is required to go from low to high in between programming command sequences.
6. The Synchronous programming operation is dependent of the Set Device Read Mode bit in the Configuration Register. The
Configuration Register must be set to the Synchronous Read Mode.
Figure 34.
October 23, 2003
Synchronous Program Operation Timings: CLK Latched Addresses
Am42BDS6408H
69
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
VIH
Read Status Data
CLK
VIL
tAVDP
AVD#
tAH
tAS
Addresses
555h for
chip erase
Data
VA
SA
2AAh
55h
VA
10h for
chip erase
In
Progress
30h
Complete
tDS
tDH
CE#
tCH
OE#
tWP
WE#
tCS
tVCS
tWHWH2
tWPH
tWC
VCC
Figure 35.
Chip/Sector Erase Command Sequence
Notes:
1. SA is the sector address for Sector Erase.
2. Address bits A21–A12 are don’t cares during unlock cycles in the command sequence.
70
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
CE#
AVD#
WE#
Addresses
PA
Don't Care
Data
OE#
ACC
1 µs
A0h
Don't Care
PD
Don't Care
tVIDS
VID
tVID
VIL or VIH
Note: Use setup and hold times from conventional program operation.
Figure 36.
October 23, 2003
Accelerated Unlock Bypass Programming Timing
Am42BDS6408H
71
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
AVD#
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
Addresses
VA
VA
Status Data
Data
Status Data
Notes:
1. Status reads in figure are shown as asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,
and Data# Polling will output true data.
3. While in Asynchronous mode, RDY will be low while the device is in embedded erase or programming mode.
Figure 37.
Data# Polling Timings (During Embedded Algorithm)
AVD#
tCEZ
tCE
CE#
tCH
tOEZ
tOE
OE#
tOEH
WE#
tACC
Addresses
VA
Data
VA
Status Data
Status Data
Notes:
1. Status reads in figure are shown as asynchronous.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete,
the toggle bits will stop toggling.
3. While in Asynchronous mode, RDY will be low while the device is in embedded erase or programming mode.
Figure 38.
72
Toggle Bit Timings (During Embedded Algorithm)
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
CE#
CLK
AVD#
Addresses
VA
VA
OE#
tIACC
Data
tIACC
Status Data
Status Data
RDY
Notes:
1. The timings are similar to synchronous read timings.
2. VA = Valid Address. Two read cycles are required to determine status. When the Embedded Algorithm operation is complete, the
toggle bits will stop toggling.
3. RDY is active with data (A18 = 0 in the Configuration Register). When A18 = 1 in the Configuration Register, RDY is active one
clock cycle before data.
Figure 39.
Enter
Embedded
Erasing
WE#
Synchronous Data Polling Timings/Toggle Bit Timings
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 40.
October 23, 2003
DQ2 vs. DQ6
Am42BDS6408H
73
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tVHH
VHH Rise and Fall Time (See Note)
Min
250
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RDY High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
VID
VID
RESET#
VIL or VIH
VIL or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RDY
Figure 41.
74
Temporary Sector Unprotect Timing Diagram
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Protect/Unprotect
Data
60h
1 µs
Valid*
Verify
60h
40h
Status
Sector Protect: 150 µs
Sector Unprotect: 15 ms
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 42. Sector/Sector Block Protect and
Unprotect Timing Diagram
October 23, 2003
Am42BDS6408H
75
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS)
Address boundary occurs every 64 words, beginning at address
00003Fh: 00007Fh, 0000BFh, etc.) Address 000000h is also a boundary crossing.
C60
C61
C62
3C
3D
3E
C63
C63
C63
C64
C65
C66
C67
3F
3F
3F
40
41
42
43
CLK
Address (hex)
AVD#
(stays high)
tRACC
tRACC
RDY(1)
latency
tRACC
tRACC
RDY(2)
Data
latency
D60
D61
D62
D63
D64
D65
D66
D67
Notes:
1. RDY active with data (A18 = 0 in the Configuration Register).
2. RDY active one clock cycle before data (A18 = 1 in the Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device not crossing
a bank in the process of performing an erase or program.
4. If the starting address latched in is either 3Eh or 3Fh (or some 64 multiple of either), there is no additional 2 cycle latency at
the boundary crossing.
Figure 43.
76
Latency with Boundary Crossing
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Address boundary occurs every 64 words, beginning at address
00003Fh: (00007Fh, 0000BFh, etc.) Address 000000h is also a boundary crossing.
C60
C61
C62
3C
3D
3E
C63
C63
C63
C64
3F
3F
3F
40
CLK
Address (hex)
AVD#
(stays high)
tRACC
RDY(1)
latency
tRACC
tRACC
RDY(2)
latency
Data
OE#,
CE#
tRACC
D60
D61
D62
D63
Invalid
Read Status
(stays low)
Notes:
1. RDY active with data (A18 = 0 in the Configuration Register).
2. RDY active one clock cycle before data (A18 = 1 in the Configuration Register).
3. Cxx indicates the clock that triggers Dxx on the outputs; for example, C60 triggers D60. Figure shows the device crossing a
bank in the process of performing an erase or program.
Figure 44. Latency with Boundary Crossing
into Program/Erase Bank
October 23, 2003
Am42BDS6408H
77
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Data
D0
D1
Rising edge of next clock cycle
following last wait state triggers
next burst data
AVD#
total number of clock cycles
following AVD# falling edge
OE#
1
2
3
0
1
4
5
6
7
3
4
5
CLK
2
number of clock cycles
programmed
Wait State Decoding Addresses:
A14, A13, A12 = “111” ⇒ Reserved
A14, A13, A12 = “110” ⇒ Reserved
A14, A13, A12 = “101” ⇒ 5 programmed, 7 total
A14, A13, A12 = “100” ⇒ 4 programmed, 6 total
A14, A13, A12 = “011” ⇒ 3 programmed, 5 total
A14, A13, A12 = “010” ⇒ 2 programmed, 4 total
A14, A13, A12 = “001” ⇒ 1 programmed, 3 total
A14, A13, A12 = “000” ⇒ 0 programmed, 2 total
Note: Figure assumes address D0 is not at an address boundary, active clock edge is rising, and wait state is set to “101”.
Figure 45.
78
Example of Wait States Insertion
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
AC CHARACTERISTICS
Last Cycle in
Program or
Sector Erase
Command Sequence
Read status (at least two cycles) in same bank
and/or array data from other bank
tWC
tRC
Begin another
write or program
command sequence
tRC
tWC
CE#
OE#
tOE
tOEH
tGHWL
WE#
tWPH
tWP
tDS
tOEZ
tACC
tOEH
tDH
Data
PD/30h
RD
RD
AAh
tSR/W
Addresses
PA/SA
RA
RA
555h
tAS
AVD#
tAH
Note: Breakpoints in waveforms indicate that system may alternately read array data from the “non-busy bank” while checking
the status of the program or erase operation in the “busy” bank. The system should read status twice to ensure valid information.
Figure 46.
October 23, 2003
Back-to-Back Read/Write Cycle Timings
Am42BDS6408H
79
A D V A N C E
I N F O R M A T I O N
SRAM AC CHARACTERISTICS
Read Cycle
Parameter
Symbol
Description
E6, E7,
D6, D7
E8, E9,
D8, D9
Unit
tRC
Read Cycle Time
Min
55
70
ns
tAA
Address Access Time
Max
55
70
ns
tCO1, tCO2
Chip Enable to Output
Max
55
70
ns
tOE
Output Enable Access Time
Max
25
35
ns
tBA
LB#s, UB#s to Access Time
Max
55
70
ns
Chip Enable (CE1#s Low and CE2s High) to Low-Z Output
Min
10
ns
tBLZ
UB#, LB# Enable to Low-Z Output
Min
10
ns
tOLZ
Output Enable to Low-Z Output
Min
5
ns
tHZ1, tHZ2
Chip Disable to High-Z Output
Max
25
ns
tBHZ
UB#s, LB#s Disable to High-Z Output
Max
25
ns
tOHZ
Output Disable to High-Z Output
Max
25
ns
tOH
Output Data Hold from Address Change
Min
10
ns
tLZ1, tLZ2
tRC
Address
tOH
Data Out
tAA
Data Valid
Previous Data Valid
Note: CE1#s = OE# = VIL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL
Figure 47.
80
SRAM Read Cycle—Address Controlled
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
SRAM AC CHARACTERISTICS
tRC
Address
tAA
tCO1
CE#1s
CE2s
tCO2
tHZ
tOE
OE#
Data Out
tOH
High-Z
tOLZ
tBLZ
tLZ
Figure 48.
tOHZ
Data Valid
SRAM Read Cycle
Notes:
1. WE# = VIH.
2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device
interconnection.
October 23, 2003
Am42BDS6408H
81
A D V A N C E
I N F O R M A T I O N
SRAM AC CHARACTERISTICS
Write Cycle
Parameter
Symbol
Description
E6, E7,
D6, D7
E8, E9,
D8, D9
Unit
tWC
Write Cycle Time
Min
55
70
ns
tCw
Chip Enable to End of Write
Min
45
60
ns
tAS
Address Setup Time
Min
tAW
Address Valid to End of Write
Min
45
60
ns
tBW
UB#s, LB#s to End of Write
Min
45
60
ns
tWP
Write Pulse Time
Min
45
50
ns
tWR
Write Recovery Time
Min
0
Min
0
tWHZ
Write to Output High-Z
Max
20
tDW
Data to Write Time Overlap
Min
30
ns
tDH
Data Hold from Write Time
Min
0
ns
tOW
End Write to Output Low-Z
min
5
ns
0
ns
ns
ns
tWC
Address
tWR
tCW
(See Note 1)
CE1#s
tAW
CE2s
WE#
Data In
tCW
(See Note 1)
tWP
(See Note 4)
tAS
(See Note 3)
tDW
High-Z
High-Z
Data Valid
tWHZ
Data Out
tDH
tOW
Data Undefined
Notes:
1. WE# controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 49.
82
SRAM Write Cycle—WE# Control
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
SRAM AC CHARACTERISTICS
tWC
Address
tAS (See Note 2 ) t
CW
(See Note 3)
tWR (See Note 4)
CE1#s
tAW
CE2s
tBW
UB#s, LB#s
tWP
(See Note 5)
WE#
tDW
Data Valid
Data In
Data Out
tDH
High-Z
High-Z
Notes:
1. CE1#s controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 50.
October 23, 2003
SRAM Write Cycle—CE1#s Control
Am42BDS6408H
83
A D V A N C E
I N F O R M A T I O N
SRAM AC CHARACTERISTICS
tWC
Address
tCW
(See Note 2)
CE1#s
tWR (See Note 3)
tAW
tCW (See Note 2)
CE2s
tBW
UB#s, LB#s
tAS
(See Note 4)
WE#
tWP
(See Note 5)
tDW
Data In
tDH
Data Valid
Data Out
High-Z
High-Z
Notes:
1. UB#s and LB#s controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 51.
84
SRAM Write Cycle—UB#s and LB#s Control
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
32 Kword
0.4
5
4 Kword
0.2
5
Unit
Sector Erase Time
s
Chip Erase Time
54
Word Programming Time
9
210
µs
Accelerated Word Programming Time
4
120
µs
Chip Programming Time (Note 3)
38
114
s
Accelerated Chip Programming Time
17
50
s
Comments
Excludes 00h programming
prior to erasure (Note 4)
s
Excludes system level
overhead (Note 5)
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 1 million cycles. Additionally,
programming typicals assumes a checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 16, “Command Definitions,” on page 40 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
BGA BALL CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
October 23, 2003
Am42BDS6408H
85
A D V A N C E
I N F O R M A T I O N
PHYSICAL DIMENSIONS
TLB 089—89-ball Fine-Pitch Ball Grid Array (FBGA) 10 x 8 mm Package
D1
A
D
eD
0.15 C
10
(2X)
9
8
SE
7
7
6
E
E1
5
4
eE
3
2
1
K
INDEX MARK
PIN A1
CORNER
B
10
TOP VIEW
J
H
G
F
E
D
C B
A
PIN A1
CORNER
7
SD
0.15 C
(2X)
BOTTOM VIEW
0.20 C
A A2
A1
C
89X
0.08 C
SIDE VIEW
6
b
0.15 M C A B
0.08 M C
NOTES:
PACKAGE
TLB089
JEDEC
10.00 mm x 8.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.20
A1
0.20
---
---
A2
0.81
---
0.97
NOTE
PROFILE
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
BODY SIZE
E
8.00 BSC.
BODY SIZE
D1
7.20 BSC.
MATRIX FOOTPRINT
E1
7.20 BSC.
MATRIX FOOTPRINT
MD
10
MATRIX SIZE D DIRECTION
ME
10
MATRIX SIZE E DIRECTION
n
89
---
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
BALL HEIGHT
10.00 BSC.
0.33
4.
BODY THICKNESS
D
φb
1.
N/A
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
BALL COUNT
0.43
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
BALL DIAMETER
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
eE
0.80 BSC
BALL PITCH
eD
0.80 BSC
BALL PITCH
SD / SE
0.40 BSC
SOLDER BALL PLACEMENT
B10,C1,C10,D1,D10,G1,G10
H1,H10,J1,J10
DEPOPULATED SOLDER BALLS
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9.
N/A
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3294\ 16-038.22a
Note: BSC is an ANSI standard for Basic Space Centering
86
Am42BDS6408H
October 23, 2003
A D V A N C E
I N F O R M A T I O N
REVISION SUMMARY
Revision A (July 14, 2003)
Initial release.
Revision A+1 (July 15, 2003)
Corrected Ordering Information OPNs.
Revision A+2 (July 21, 2003)
Corrected typos in datasheet regarding package name.
Revision A+3 (October 23, 2003)
Corrected globally all pSRAM to SRAM. Remove 80
MHz option throughout.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
October 23, 2003
Am42BDS6408H
87
Representatives in U.S. and Canada
Sales Offices and Representatives
North America
ALABAMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 5 6 ) 8 3 0 - 9 1 9 2
ARIZONA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 2 ) 24 2 - 4 4 0 0
CALIFORNIA,
Irvine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 4 5 0 - 7 5 0 0
Sunnyvale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 7 3 2 - 24 0 0
COLORADO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 74 1 - 2 9 0 0
CONNECTICUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 0 3 ) 2 6 4 - 7 8 0 0
FLORIDA,
Clearwater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 2 7 ) 7 9 3 - 0 0 5 5
Miami (Lakes) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 5 ) 8 2 0 - 1 1 1 3
GEORGIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 7 0 ) 8 1 4 - 0 2 2 4
ILLINOIS,
Chicago . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 3 0 ) 7 7 3 - 4 4 2 2
MASSACHUSETTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 1 3 - 6 4 0 0
MICHIGAN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 4 8 ) 4 7 1 - 6 2 9 4
MINNESOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 1 2 ) 74 5 - 0 0 0 5
NEW JERSEY,
Chatham . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 3 ) 7 0 1 - 1 7 7 7
NEW YORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 4 2 5 - 8 0 5 0
NORTH CAROLINA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 0 - 8 0 8 0
OREGON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 24 5 - 0 0 8 0
PENNSYLVANIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 1 5 ) 3 4 0 - 1 1 8 7
SOUTH DAKOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 6 0 5 ) 69 2 - 5 7 7 7
TEXAS,
Austin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 1 2 ) 3 4 6 - 7 8 3 0
Dallas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 7 2 ) 9 8 5 - 1 3 4 4
Houston . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 8 1 ) 3 76 - 8 0 8 4
VIRGINIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 0 3 ) 7 3 6 - 9 5 6 8
International
AUSTRALIA, North Ryde . . . . . . . . . . . . . . . . . . . . . . . T E L ( 6 1 ) 2 - 8 8 - 7 7 7 - 2 2 2
BELGIUM, Antwerpen . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 2 ) 3 - 2 4 8 - 4 3 - 0 0
BRAZIL, San Paulo . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 5 5 ) 1 1 - 5 5 0 1 - 2 1 0 5
CHINA,
Beijing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 1 0 - 6 5 1 0 - 2 1 8 8
Shanghai . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 2 1 - 6 3 5 - 0 0 8 3 8
Shenzhen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 6 ) 7 5 5 - 24 6 - 1 5 5 0
FINLAND, Helsinki . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 5 8 ) 8 8 1 - 3 1 1 7
FRANCE, Paris . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 3 ) - 1 - 4 9 7 5 1 0 1 0
GERMANY,
Bad Homburg . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 6 1 7 2 - 9 2 6 7 0
Munich . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 8 9 - 4 5 0 5 3 0
HONG KONG, Causeway Bay . . . . . . . . . . . . . . . . . . . T E L ( 8 5 ) 2 - 2 9 5 6 - 0 3 8 8
ITALY, Milan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 9 ) - 0 2 - 3 8 1 9 6 1
INDIA, New Delhi . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 9 1 ) 1 1 - 6 2 3 - 8 6 2 0
JAPAN,
Osaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 6 - 6 2 4 3 - 3 2 5 0
Tokyo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 1 ) 3 - 3 3 4 6 - 7 6 0 0
KOREA, Seoul . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 2 ) 2 - 3 4 6 8 - 2 6 0 0
RUSSIA, Moscow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(7)-095-795-06-22
SWEDEN, Stockholm . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 6 ) 8 - 5 62 - 5 4 0 - 0 0
TAIWAN,Taipei . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 8 8 6 ) 2 - 8 7 7 3 - 1 5 5 5
UNITED KINGDOM,
Frimley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 2 7 6 - 8 0 3 1 0 0
Haydock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 4 ) 1 9 4 2 - 2 7 2 8 8 8
Advanced Micro Devices reserves the right to make changes in its product without notice
in order to improve design or performance characteristics.The performance
characteristics listed in this document are guaranteed by specific tests, guard banding,
design and other practices common to the industry. For specific testing details, contact
your local AMD sales representative.The company assumes no responsibility for the use of
any circuits described herein.
© Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD Arrow logo and combination thereof, are trademarks of
Advanced Micro Devices, Inc. Other product names are for informational purposes only
and may be trademarks of their respective companies.
es
ARIZONA,
Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 8 0 ) 8 3 9 - 2 3 2 0
CALIFORNIA,
Calabasas - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 8 ) 8 7 8 - 5 8 0 0
Irvine - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 4 9 ) 2 6 1 - 2 1 2 3
San Diego - Centaur. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 8 ) 2 7 8 - 4 9 5 0
Santa Clara - Fourfront. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 0 8 ) 3 5 0 - 4 8 0 0
CANADA,
Burnaby, B.C. - Davetek Marketing. . . . . . . . . . . . . . . . . . . . ( 6 0 4 ) 4 3 0 - 3 6 8 0
Calgary, Alberta - Davetek Marketing. . . . . . . . . . . . . . . . . ( 4 0 3 ) 2 8 3 - 3 5 7 7
Kanata, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . . . ( 6 1 3 ) 5 9 2 - 9 5 4 0
Mississauga, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . ( 9 0 5 ) 6 7 2 - 2 0 3 0
St Laurent, Quebec - J-Squared Tech. . . . . . . . . . . . . . . . ( 5 1 4 ) 7 4 7 - 1 2 1 1
COLORADO,
Golden - Compass Marketing . . . . . . . . . . . . . . . . . . . . . . ( 3 0 3 ) 2 7 7 - 0 4 5 6
FLORIDA,
Melbourne - Marathon Technical Sales . . . . . . . . . . . . . . . . ( 3 2 1 ) 7 2 8 - 7 7 0 6
Ft. Lauderdale - Marathon Technical Sales . . . . . . . . . . . . . . ( 9 5 4 ) 5 2 7 - 4 9 4 9
Orlando - Marathon Technical Sales . . . . . . . . . . . . . . . . . . ( 4 0 7 ) 8 7 2 - 5 7 7 5
St. Petersburg - Marathon Technical Sales . . . . . . . . . . . . . . ( 7 2 7 ) 8 9 4 - 3 6 0 3
GEORGIA,
Duluth - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . ( 6 7 8 ) 5 8 4 - 1 1 2 8
ILLINOIS,
Skokie - Industrial Reps, Inc. . . . . . . . . . . . . . . . . . . . . . . . . ( 8 4 7 ) 9 6 7 - 8 4 3 0
INDIANA,
Kokomo - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 6 5 ) 4 5 7 - 7 2 4 1
IOWA,
Cedar Rapids - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . ( 3 1 9 ) 2 9 4 - 1 0 0 0
KANSAS,
Lenexa - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 3 ) 4 6 9 - 1 3 1 2
MASSACHUSETTS,
Burlington - Synergy Associates . . . . . . . . . . . . . . . . . . . . . ( 7 8 1 ) 2 3 8 - 0 8 7 0
MICHIGAN,
Brighton - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 1 0 ) 2 2 7 - 0 0 0 7
MINNESOTA,
St. Paul - Cahill, Schmitz & Cahill, Inc. . . . . . . . . . . . . . . . . . ( 6 5 1 ) 69 9 - 0 2 0 0
MISSOURI,
St. Louis - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 1 4 ) 9 9 7 - 4 5 5 8
NEW JERSEY,
Mt. Laurel - SJ Associates . . . . . . . . . . . . . . . . . . . . . . . . . ( 8 5 6 ) 8 6 6 - 1 2 3 4
NEW YORK,
Buffalo - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 7 4 1 - 7 1 1 6
East Syracuse - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 3 1 5 ) 4 3 7 - 8 3 4 3
Pittsford - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 5 8 6 - 3 6 6 0
Rockville Centre - SJ Associates . . . . . . . . . . . . . . . . . . . . ( 5 1 6 ) 5 3 6 - 4 2 4 2
NORTH CAROLINA,
Raleigh - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . . ( 9 1 9 ) 8 4 6 - 5 7 2 8
OHIO,
Middleburg Hts - Dolfuss Root & Co. . . . . . . . . . . . . . . . . ( 4 4 0 ) 8 1 6 - 1 6 6 0
Powell - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 7 8 1 - 0 7 2 5
Vandalia - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . ( 9 3 7 ) 8 9 8 - 9 6 1 0
Westerville - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . ( 6 1 4 ) 5 2 3 - 1 9 9 0
OREGON,
Lake Oswego - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . ( 5 0 3 ) 6 7 0 - 0 5 5 7
UTAH,
Murray - Front Range Marketing . . . . . . . . . . . . . . . . . . . . ( 8 0 1 ) 2 8 8 - 2 5 0 0
VIRGINIA,
Glen Burnie - Coherent Solution, Inc. . . . . . . . . . . . . . . . . ( 4 1 0 ) 7 6 1 - 2 2 5 5
WASHINGTON,
Kirkland - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . ( 4 2 5 ) 8 2 2 - 9 2 2 0
WISCONSIN,
Pewaukee - Industrial Representatives . . . . . . . . . . . . . . . . ( 2 6 2 ) 5 74 - 9 3 9 3
Representatives in Latin America
ARGENTINA,
Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655
CHILE,
Santiago - LatinRep/WWRep. . . . . . . . . . . . . . . . . . . . . . . . . .(+562)264-0993
COLUMBIA,
Bogota - Dimser. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 7 1 ) 4 1 0 - 4 1 8 2
MEXICO,
Guadalajara - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 3 ) 8 1 7 - 3 9 0 0
Mexico City - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . ( 5 2 5 ) 7 5 2 - 2 7 2 7
Monterrey - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . . ( 5 2 8 ) 3 69 - 6 8 2 8
PUERTO RICO,
Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 8 7 ) 8 5 1 - 6 0 0 0
One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400
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©2003 Advanced Micro Devices, Inc.
01/03
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