STMICROELECTRONICS 2STR2160

2STR2160
Low voltage fast-switching PNP power transistor
Preliminary Data
Features
■
Very low collector-emitter saturation voltage
■
High current gain characteristic
■
Fast switching speed
■
Miniature SOT-23 plastic package for surface
mounting circuits
Applications
SOT-23
■
LED
■
Battery charger
■
Motor and relay driver
■
Voltage regulation
Figure 1.
Internal schematic diagram
Description
The device in a PNP transistor manufactured
using new “PB-HCD” (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary NPN is the 2STR1160.
Table 1.
Device summary
Order code
Marking
Package
Packing
2STR2160
260
SOT-23
Tape and reel
June 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
9
Content
2STR2160
Content
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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2STR2160
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Parameter
Value
Unit
VCBO
Collector-base voltage (IE = 0)
-60
V
VCEO
Collector-emitter voltage (IB = 0)
-60
V
VEBO
Emitter-base voltage (IC = 0)
-5
V
Collector current
-1
A
ICM
Collector peak current (tP < 5ms)
-2
A
Ptot
Total dissipation at Tamb = 25°C
0.5
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
250
°C/W
IC
TJ
Table 3.
Symbol
Max. operating junction temperature
Thermal data
Parameter
Rthj-amb(1) Thermal resistance junction-amb max
1. Device mounted on PCB area of 1 cm2
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Electrical characteristics
2
2STR2160
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = -60 V
-0.1
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = -5 V
-0.1
µA
Collector-base
breakdown voltage
(IE = 0)
IC = -100 µA
-60
V
Collector-emitter
V(BR)CEO(1) breakdown voltage
(IB = 0)
IC = -10 mA
-60
V
-5
V
V(BR)CBO
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = -100 µA
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = -0.5 A
VBE(sat)(1)
Base-emitter saturation
voltage
hFE(1)
ton
toff
DC current gain
Resistive load
Turn-on time
Turn-off time
1. Pulsed duration = 300 µs, duty cycle ≤1.5%
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Test conditions
IB = -50 mA
IC = -1 A
IB = -100 mA
260
480
IC = -1 A
IB = -100 mA
1.3
IC = -0.5 A
VCE = -2V
IC = -1 A
VCE = -2 V
IC = -2 A
VCE = -2 V
IC = -1.5 A
180
45
mV
mV
V
560
30
VCC = -10 V
IB1 = -IB2 = -150 mA
VBB(off)= 5 V
220
500
ns
ns
2STR2160
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data
2STR2160
SOT-23 mechanical data
mm.
DIM.
min.
typ
max.
A
0.89
1.4
A1
0
0.1
B
0.3
0.51
C
0.085
0.18
D
2.75
3.04
e
0.85
1.05
e1
1.7
2.1
E
1.2
1.6
H
2.1
2.75
L
S
0.6
0.35
0.65
0053390_G
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2STR2160
Package mechanical data
Figure 2.
SOT-23 footprint
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Revision history
4
2STR2160
Revision history
Table 5.
8/9
Document revision history
Date
Revision
18-Jun-2008
1
Changes
Initial release
2STR2160
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