74VHC245 OCTAL BUS TRANSCEIVER (3-STATE) ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.0 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON CONTROL INPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN) BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 245 IMPROVED LATCH-UP IMMUNITY LOW NOISE: VOLP = 0.9V (MAX.) DESCRIPTION The 74VHC245 is an advanced high-speed CMOS OCTAL BUS TRANSCEIVER (3-STATE) fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. This IC is intended for two-way asynchronous communication between data busses; the SOP TSSOP Table 1: Order Codes PACKAGE T&R SOP TSSOP 74VHC245MTR 74VHC245TTR direction of data transmission is determined by DIR input. The enable input G can be used to disable the device so that the busses are effectively isolated. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. All floating bus terminals during High Z State must be held HIGH or LOW. Figure 1: Pin Connection And IEC Logic Symbols November 2004 Rev. 6 1/12 74VHC245 Figure 2: Input Equivalent Circuit Table 2: Pin Description PIN N° SYMBOL 1 2, 3, 4, 5, 6, 7, 8, 9 18, 17, 16, 15, 14, 13, 12, 11 19 10 20 DIR A1 to A8 Directional Control Data Inputs/Outputs B1 to B8 Data Inputs/Outputs G GND VCC NAME AND FUNCTION Output Enable Input Ground (0V) Positive Supply Voltage Table 3: Truth Table INPUTS FUNCTION OUTPUT G DIR A BUS B BUS L L H L H X OUTPUT INPUT Z INPUT OUTPUT Z A=B B=A Z X : Don‘t Care Z : High Impedance Table 4: Absolute Maximum Ratings Symbol VCC VI Parameter Value Unit Supply Voltage -0.5 to +7.0 V DC Input Voltage (DIR, G) -0.5 to +7.0 V VI/O Bus I/O Voltage -0.5 to VCC + 0.5 V VO DC Output Voltage IIK DC Input Diode Current -0.5 to VCC + 0.5 - 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 25 mA ICC or IGND DC VCC or Ground Current Storage Temperature Tstg TL Lead Temperature (10 sec) V ± 75 mA -65 to +150 °C 300 °C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied Table 5: Recommended Operating Conditions Symbol Value Unit Supply Voltage 2 to 5.5 V Input Voltage (DIR, G) 0 to 5.5 V VI/O Bus I/O Voltage 0 to VCC V VO Output Voltage 0 to VCC V Top Operating Temperature -55 to 125 °C 0 to 100 0 to 20 ns/V VCC VI dt/dv Parameter Input Rise and Fall Time (note 1) (VCC = 3.3 ± 0.3V) (VCC = 5.0 ± 0.5V) 1) VIN from 30% to 70% of VCC 2/12 74VHC245 Table 6: DC Specifications Test Condition Symbol VIH VIL VOH VOL IOZ II ICC Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Low Level Output Voltage High Impedance Output Leakage Current Input Leakage Current Quiescent Supply Current Value TA = 25°C VCC (V) Min. 2.0 3.0 to 5.5 2.0 3.0 to 5.5 Typ. Max. -40 to 85°C -55 to 125°C Min. Min. Max. 1.5 1.5 1.5 0.7VCC 0.7VCC 0.7VCC Max. V 0.5 0.5 0.5 0.3VCC 0.3VCC 0.3VCC 2.0 IO=-50 µA 1.9 2.0 1.9 1.9 3.0 IO=-50 µA 2.9 3.0 2.9 2.9 4.5 IO=-50 µA 4.4 4.5 3.0 IO=-4 mA 2.58 3.94 4.4 4.4 2.48 2.4 Unit V V 4.5 IO=-8 mA 2.0 IO=50 µA 0.0 0.1 0.1 0.1 3.0 IO=50 µA 0.0 0.1 0.1 0.1 4.5 IO=50 µA 0.0 0.1 0.1 0.1 3.0 IO=4 mA 0.36 0.44 0.55 4.5 IO=8 mA 0.36 0.44 0.55 5.5 VI = VIH or VIL VO = VCC or GND ±0.25 ± 2.5 ± 2.5 µA 0 to 5.5 VI = 5.5V or GND ± 0.1 ±1 ±1 µA 5.5 VI = VCC or GND 4 40 40 µA 3.8 3.7 V 3/12 74VHC245 Table 7: AC Electrical Characteristics (Input tr = tf = 3ns) Test Condition Symbol Parameter VCC (V) CL (pF) tPLH tPHL Propagation Delay Time 3.3(*) (*) (**) Output Disable Time tPLZ tPHZ Output Enable Time tOSLH tOSHL Output to Output Skew time (note 1) TA = 25°C -55 to 125°C Max. Min. Max. Min. Max. 15 5.8 8.4 1.0 10.0 1.0 10.0 50 8.3 11.9 1.0 13.5 1.0 13.5 15 4.0 5.5 1.0 6.5 1.0 6.5 5.0(**) 50 5.5 7.5 1.0 8.5 1.0 8.5 3.3(*) 15 RL = 1KΩ 8.5 13.2 1.0 15.5 1.0 15.5 3.3(*) 50 RL = 1KΩ 11.0 16.7 1.0 19.0 1.0 19.0 5.0(**) 15 RL = 1KΩ 5.8 8.5 1.0 10.0 1.0 10.0 5.0(**) 1.0 12.0 1.0 12.0 3.3 Min. -40 to 85°C Typ. 5.0 tPZL tPZH Value 50 RL = 1KΩ 7.3 10.6 (*) 50 RL = 1KΩ 11.5 15.8 1.0 18.0 1.0 18.0 (**) 50 RL = 1KΩ 7.0 9.7 1.0 11.0 1.0 11.0 3.3(*) 50 1.5 1.5 1.5 5.0(**) 50 1.0 1.0 1.0 3.3 5.0 Unit ns ns ns ns (*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5V Note 1: Parameter guaranteed by design. tsoLH = |tpLHm - tpLHn|, tsoHL = |tpHLm - tpHLn| Table 8: Capacitive Characteristics Test Condition Symbol Parameter Value TA = 25°C Min. CIN Input Capacitance CI/O Output Capacitance Power Dissipation Capacitance (note 1) CPD Typ. Max. 4 10 -40 to 85°C -55 to 125°C Min. Min. Max. 10 Unit Max. 10 pF 8 pF 21 pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per circuit) 4/12 74VHC245 Table 9: Dynamic Switching Characteristics Test Condition Symbol VOLP VOLV VIHD VILD Parameter Dynamic Low Voltage Quiet Output (note 1, 2) Dynamic High Voltage Input (note 1, 3) Dynamic Low Voltage Input (note 1, 3) TA = 25°C VCC (V) Min. 5.0 5.0 Value -0.9 CL = 50 pF 5.0 Typ. Max. 0.6 0.9 -40 to 85°C -55 to 125°C Min. Min. Max. Unit Max. V -0.6 3.5 V 1.5 V 1) Worst case package. 2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n-1) outputs switching and one output at GND. 3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz. Figure 3: Test Circuit TEST SWITCH tPLH, tPHL Open tPZL, tPLZ VCC tPZH, tPHZ GND CL =15/ 50pF or equivalent (includes jig and probe capacitance) RL = R1 = 1KΩ or equivalent RT = ZOUT of pulse generator (typically 50Ω) 5/12 74VHC245 Figure 4: Waveform - Propagation Delays (f=1MHz; 50% duty cycle) Figure 5: Waveform - Output Enable And Disable Time (f=1MHz; 50% duty cycle) 6/12 74VHC245 SO-20 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 2.35 2.65 0.093 0.104 A1 0.1 0.30 0.004 0.012 B 0.33 0.51 0.013 0.020 C 0.23 0.32 0.009 0.013 D 12.60 13.00 0.496 0.512 E 7.4 7.6 0.291 0.299 e 1.27 0.050 H 10.00 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.4 1.27 0.016 0.050 k 0° 8° 0° 8° ddd 0.100 0.004 0016022D 7/12 74VHC245 TSSOP20 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. A MIN. TYP. MAX. 1.2 A1 0.05 A2 0.8 b 0.047 0.15 0.002 0.004 0.006 1.05 0.031 0.039 0.041 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0079 D 6.4 6.5 6.6 0.252 0.256 0.260 E 6.2 6.4 6.6 0.244 0.252 0.260 E1 4.3 4.4 4.48 0.169 0.173 0.176 1 e 0.65 BSC K 0˚ L 0.45 A 0.0256 BSC 0.60 8˚ 0˚ 0.75 0.018 8˚ 0.024 0.030 A2 A1 b K e L E c D E1 PIN 1 IDENTIFICATION 1 0087225C 8/12 74VHC245 Tape & Reel SO-20 MECHANICAL DATA mm. inch DIM. MIN. A TYP MAX. MIN. 330 MAX. 12.992 C 12.8 D 20.2 0.795 N 60 2.362 T 13.2 TYP. 0.504 30.4 0.519 1.197 Ao 10.8 11 0.425 0.433 Bo 13.2 13.4 0.520 0.528 Ko 3.1 3.3 0.122 0.130 Po 3.9 4.1 0.153 0.161 P 11.9 12.1 0.468 0.476 9/12 74VHC245 Tape & Reel TSSOP20 MECHANICAL DATA mm. inch DIM. MIN. A MAX. MIN. 330 13.2 TYP. MAX. 12.992 C 12.8 D 20.2 0.795 N 60 2.362 T 10/12 TYP 0.504 22.4 0.519 0.882 Ao 6.8 7 0.268 0.276 Bo 6.9 7.1 0.272 0.280 Ko 1.7 1.9 0.067 0.075 Po 3.9 4.1 0.153 0.161 P 11.9 12.1 0.468 0.476 74VHC245 Table 10: Revision History Date Revision 12-Nov-2004 6 Description of Changes Order Codes Revision - pag. 1. 11/12 74VHC245 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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