STMICROELECTRONICS BU508DFI

BU508DFI
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY ( > 1500 V )
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
HORIZONTAL DEFLECTION FOR COLOUR
TV UP TO 25"
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DESCRIPTION
The
BU508DFI
is
manufactured
using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CES
V CEO
V EBO
IC
I CM
IB
I BM
P tot
V isol
T stg
Tj
April 2002
Parameter
Collector-Emitter Voltage (V BE = 0)
Collector-Emitter Voltage (I B = 0)
Emitter-Base Voltage (I C = 0)
Collector Current
Collector Peak Current (t p < 5 ms)
Base Current
Base Peak Current (t p < 5 ms)
Total Dissipation at T c = 25 o C
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
Value
1500
700
10
8
15
5
8
50
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o
o
C
C
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BU508DFI
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
2.5
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ.
T j = 125 o C
I C = 100 m A
Max.
Unit
1
2
mA
mA
300
mA
700
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 4.5 A
IB = 2 A
1
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 4.5 A
IB = 2 A
1.3
V
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
I C = 4.5 A h FE = 2.5 V CC = 140 V
L C = 0.9 mH L B = 3 µH
(see figure 1)
VF
Diode Forward Voltage I F = 4 A
fT
Transition Frequency
I C = 0.1 A
2
V CE = 5 V
f = 5 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/6
µs
ns
7
550
Thermal Impedance
7
V
MHz
BU508DFI
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load
3/6
BU508DFI
Switching Time Percentance vs. Case
Figure 1: Inductive Load Switching Test Circuit.
4/6
BU508DFI
ISOWATT218 MECHANICAL DATA
DIM.
A
C
D
D1
E
F
F2
F3
G
H
L
L1
L2
L3
L4
L5
L6
N
R
DIA
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
mm
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
21.20
19.90
23.60
42.50
5.25
20.75
2.3
0.819
0.752
0.898
1.594
0.191
0.797
0.083
3.7
0.138
9
20.80
19.10
22.80
40.50
4.85
20.25
2.1
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
0.354
4.6
3.5
inch
TYP.
0.835
0.783
0.929
1.673
0.207
0.817
0.091
0.181
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
0.146
P025C/A
5/6
BU508DFI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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