STMICROELECTRONICS BUX87

BUX87
®
HIGH VOLTAGE NPN
SILICON POWER TRANSISTOR
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY (450V VCEO)
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
HIGH DC CURRENT GAIN
APPLICATIONS
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
■
DESCRIPTION
The BUX87 is manufactured using High Voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
3
2
1
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CES
Collector-Emitter Voltage (V BE = -1.5V)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
IB
Collector Current
Collector Peak Current (t p < 5 ms)
Value
Unit
1000
V
450
V
5
V
0.5
A
1
A
Base Current
0.3
A
I BM
Base Peak Current (t p < 5 ms)
0.6
A
P tot
Total Dissipation at T c = 25 o C
40
W
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
September 2003
-65 to 150
o
C
150
o
C
1/5
BUX87
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
3.12
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CEV
Collector Cut-off
Current (V BE = -1.5V)
V CE = 1000 V
V CE = 1000 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Min.
Typ.
T j = 125 o C
I C = 100 mA
Max.
Unit
100
1
µA
mA
1
mA
450
V
5
V
V BEO
Collector-Base
Sustaining Voltage
I C = 10 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = 0.1 A
I C = 0.2 A
IB = 0.01 A
IB = 0.02 A
0.8
1
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = 0.2 A
IB = 0.02 A
1
V
DC Current Gain
I C = 50 mA
I C = 40 mA
VCE = 5 V
VCE = 5 V
VCE = 10 V f=1MHz
h FE ∗
fT
Transition Frequency
I C = 50 mA
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
V CC = 250 V
I B1 = 40 mA
t p = 20 µs
I C = 200 mA
I B2 = -80 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/5
Derating Curve
50
12
20
MHz
4.5
0.5
µs
µs
BUX87
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Reverse Biased SOA
3/5
BUX87
SOT-32 (TO-126) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.425
b
0.7
0.9
0.028
0.035
b1
0.40
0.65
0.015
0.025
C
2.4
2.7
0.094
0.106
c1
1.0
1.3
0.039
0.051
D
15.4
16.0
0.606
0.630
e
2.2
0.087
e3
4.4
0.173
F
G
3.8
3
0.150
3.2
H
0.118
0.126
2.54
0.100
H2
2.15
0.084
I
1.27
0.05
O
0.3
0.011
V
o
10
10o
1: Base
2: Collector
3: Emitter
0016114/B
4/5
BUX87
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5