STB13007DT4 High voltage fast-switching NPN power transistor General features ■ Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully characterized at 125 °C ■ Large RBSOA ■ In compliance with the 2002/93/EC European Directive 1 3 D2PAK (T0-263) Internal schematic diagram Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. Applications ■ Electronic transformers for halogen lamps ■ Switch mode power supplies Order codes Part Number Marking Package Packing STB13007DT4 B13007D D 2PAK Tape & Reel June 2006 Rev 1 1/10 www.st.com 10 STB13007DT4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 STB13007DT4 1 Electrical ratings Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCEV Collector-emitter voltage (V BE = -1.5V) 700 V VCEO Collector-emitter voltage (IB = 0) 400 V VEBO Emitter-base voltage (IC = 0) 9 V Collector current 8 A Collector peak current (tP < 5ms) 16 A Base current 4 A IBM Base peak current (tP < 5ms) 8 A Ptot Total dissipation at T c = 25°C 80 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 1.56 62.5 °C/W °C/W IC ICM IB TJ Table 2. Symbol Rthj-case Rthj-amb Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-amb __max __max 3/10 Electrical characteristics 2 STB13007DT4 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter Test Conditions Min. Typ. VCE =700V Max. Unit 10 0.5 µA mA ICES Collector cut-off current (VBE =0V) ICEO Collector cut-off current (IB =0) VCE =400V 100 µA IEBO Emitter cut-off current (IC =0) VEB =9V 100 µA Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) VCE =700V Tc =100°C IC =10mA 400 V IC = 2A VCE(sat) (1) Collector-emitter saturation voltage _ _ _ IB = 0.4A IC = 5 A __ _ IB = 1A 0.8 V 1.5 V IC = 8 A __ _ IB = 2A 2 V IC = 5 A __ _ IB = 1A 3 V 1.2 V IC = 5A _ _ _ IB = 0.4A __ _ IB = 1A 1.6 V IC = 5A __ _ IB = 1A 1.5 V Tc =100°C IC = 2A VBE(sat) (1) Base-emitter saturation voltage Tc =100°C DC current gain IC = 2A IC = 5A Vf Diode forward voltage IC = 3A ts Inductive load Storage time Fall time hFE tf ts tf Inductive load Storage time Fall time _ _VCE = 5V _VCE = 5V 40 8 25 2.5 V 1.7 2.3 µs 90 150 ns IC = 5A ___ VClamp = 250V IB1 = 1A VBE(off) = -5V RBB = 0Ω L = 200µH (see fig. 11) IC = 5A ___ VClamp = 250V IB1 = 1A VBE(off) = -5V RBB = 0Ω L = 200µH Tc =125°C Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 4/10 18 (see fig. 11) 2.2 µs 150 ns STB13007DT4 2.1 Electrical characteristics Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Derating curve Figure 3. DC current gain Figure 4. DC current gain Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter saturation voltage 5/10 Electrical characteristics 2.2 STB13007DT4 Figure 7. Diode forward voltage Figure 8. Figure 9. Switching times inductive load Figure 10. Reverse biased safe operating area Test circuits Figure 11. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier 6/10 Switching times inductive load STB13007DT4 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data STB13007DT4 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 8/10 STB13007DT4 4 Revision history Revision history Table 4. Revision history Date Revision 19-Jun-2006 1 Changes Initial release. 9/10 STB13007DT4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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