STMICROELECTRONICS BULD742CT4

BULD742C
High voltage fast-switching
NPN power transistor
Features
■
Low spread of dynamic parameters
■
High voltage capability
■
Minimum lot-to-lot spread for reliable operation
■
Very high switching speed
3
1
Applications
■
Electronic ballast for fluorescent lighting
■
Switch mode power supplies
DPAK
Description
The device is manufactured using high voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
BULD742CT4
BULD742C
DPAK
Tape & reel
August 2007
Rev 1
1/12
www.st.com
12
Contents
BULD742C
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
BULD742C
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VBE = 0)
1050
V
VCEO
Collector-emitter voltage (IB = 0)
400
V
VEBO
Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms)
V(BR)EBO
V
Collector current
4
A
Collector peak current (tP < 5ms)
8
A
Base current
2
A
IBM
Base peak current (tP < 5ms)
4
A
Ptot
Total dissipation at Tc = 25°C
45
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
2.78
°C/W
73
°C/W
IC
ICM
IB
TJ
Table 3.
Symbol
Max. operating junction temperature
Thermal data
Parameter
Rthj-case Thermal resistance junction - case
Rthj-amb
Thermal resistance junction - ambient
3/12
Electrical characteristics
2
BULD742C
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test Conditions
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE =1050 V
0.2
10
µA
ICEO
Collector cut-off current
(IB = 0)
VCE =400 V
10
250
µA
V(BR)EBO
Emitter base breakdown
voltage (IC = 0)
IE = 1 mA
15
19
24
V
IC =10 mA
400
450
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IB = 0)
IC = 1 A
0.5
1.5
V
V
IC = 3.5 A
IB = 1 A
1.1
1.5
V
IC = 0.1 A
IC = 0.8 A
_
VCE = 5 V
_ _ VCE = 3 V
75
35
100
50
2.4
350
3.5
500
IC = 3.5 A
VBE(sat) (1)
Base-emitter saturation
voltage
DC current gain
ts
tf
Ear
Repetitive avalanche
energy
IB = 0.2 A
0.15
0.6
Collector-emitter
saturation voltage
Resistive load
Storage time
Fall time
_
V
IB = 1 A
VCE(sat) (1)
hFE (1)
_ _
IC = 2 A
48
25
VCC = 125 V
IB1 = -IB2 = 400 mA
tp = 300 µs
L = 2 mH
VBE(off) = -5 V
1. Pulsed duration = 300 ms, duty cycle ≤1.5%
4/12
Min.
VBE(off) = -5 V
µs
ns
C = 1.8 nF
6
mJ
BULD742C
2.1
Electrical characteristics
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
Output characteristics
Figure 5.
DC current gain
Figure 6.
DC current gain
Figure 7.
Collector - emitter saturation
voltage
5/12
Electrical characteristics
Figure 8.
6/12
Base-emitter saturation
voltage
BULD742C
Figure 9.
Resistive load switching on
times (hFE = 5)
Figure 10. Resistive load switching off
times (hFE = 5)
Figure 11. Resistive load switching on
times (hFE = 10)
Figure 12. Resistive load switching off
times (hFE = 10)
Figure 13. Reverse biased SOA
BULD742C
3
Test circuit
Test circuit
Figure 14. Energy rating test circuit
Figure 15. Resistive load switching test circuit
7/12
Package mechanical data
4
BULD742C
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/12
BULD742C
Package mechanical data
DPAK MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
A1
A2
B
b4
MIN.
2.2
0.9
0.03
0.64
5.2
2.4
1.1
0.23
0.9
5.4
0.086
0.035
0.001
0.025
0.204
0.094
0.043
0.009
0.035
0.212
C
C2
D
D1
E
E1
0.45
0.48
6
0.6
0.6
6.2
0.017
0.019
0.236
0.023
0.023
0.244
6.6
0.252
e
e1
H
L
(L1)
L2
L4
R
V2
TYP
5.1
6.4
0.090
4.6
10.1
0.173
0.368
0.039
2.8
0.8
0.181
0.397
0.110
0.031
1
0.023
0.2
0°
0.260
0.185
2.28
0.6
MAX.
0.200
4.7
4.4
9.35
1
TYP.
0.039
0.008
8°
0°
8°
0068772-F
9/12
Packaging mechanical data
5
BULD742C
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
10/12
inch
1.5
D1
1.5
E
1.65
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
0.059
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
BULD742C
6
Revision history
Revision history
Table 5.
Document revision history
Date
Revision
09-Aug-2007
1
Changes
First release.
11/12
BULD742C
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