EMIF11-10002C4 ® 9 LINES EMI FILTER AND ESD PROTECTION IPADTM MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required : Mobile phones and communication systems ■ Computers, printers and MCU Boards ■ DESCRIPTION The EMIF11-10002C4 is a highly integrated devices designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interferences. This device includes 9 EMI filters & ESD protection circuitry which prevents the device from destruction when subjected to ESD surges up 15kV. In addition, the EMIF11 integrates 2 other ESD protection for data and 1 ESD protection for VCC. BENEFITS ■ ■ ■ ■ ■ ■ EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering High efficiency in ESD suppression (IEC61000-4-2 level 4) High reliability offered by monolithic integration High reducing of parasitic elements through integration & wafer level packaging QFN 4x4mm package for an easy layout QFN 4x4mm PIN CONFIGURATION (ball side) I1 I2 Level 4 on input pins 15kV 8 kV (air discharge) (contact discharge) I4 I5 I6 GND 01 I7 02 I8 03 I9 GND 04 COMPLIES WITH THE FOLLOWING STANDARDS: IEC61000-4-2 I3 GND I10 05 I11 06 I12 GND GND 07 08 09 010 011 012 MIL STD 883E - Method 3015-7 Class 3 BASIC CELL CONFIGURATION Input 4 to 12 GND Output 4 to 12 GND I1/O1 I2/O2 (Vcc) I3/O3 GND Ri/o = 100Ω Cline = 45pF 9 filters TM : IPAD is a trademark of STMicroelectronics. October 2003 - Ed: 1A 1/6 EMIF11-10002C4 ABSOLUTE RATINGS (limiting values) Symbol Value Unit Tj Maximum junction temperature Parameter and test conditions 150 °C TL Maximum lead temperature for soldering during 10s 260 °C Top Operating temperature range -40 to + 85 °C Tstg Storage temperature range -40 to +85 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C) Symbol I Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage RI/O Series resistance between Input & Output Cline Input capacitance per line IF VF VCL VBR VRM V IRM IR IPP Symbol Test conditions VBR IR = 1 mA IRM VRM = 3V per line RI/O Cells 4 to 12 Cline VR = 0V (Cells 4 to 12) Min. Typ. Max. Unit 6 7 8 V 1 µA 110 Ω 90 100 45 Fig. 1: S21(dB) attenuation measurement and Aplac simulation. 0 pF Fig. 2: Analog crosstalk measurements. -30 dB dB -10 Measurement -20 -40 -50 Simulation -30 -60 -40 -70 -50 -80 1 10 100 f/Hz 2/6 1,000 MHz 1 10 100 f/Hz 1,000MHz EMIF11-10002C4 Fig. 3: Digital crosstalk measurement. Fig. 4: ESD response to IEC61000-4-2 (+15kV air discharge) on one input V(in) and on one output V(out). Vin Vin V(In) Vout » 1.8mV -> è Xtalk = -55dB V(Out) 10V/div Fig. 5: ESD response to IEC61000-4-2 (-15kV air discharge) on one input V(in) and on one output V(out). 100ns/div Fig. 6: Line capacitance of filter cells versus applied voltage. C(pF) 55 V(In) F = 1MHz Vosc = 30mVRMS Tj = 25°C 50 45 40 35 30 25 20 V(Out) 15 10 5 VR(V) 0 0.0 10V/div 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 100ns/div 3/6 EMIF11-10002C4 Aplac model. Ix_die Ox_die R16_04 100 D16 DEMIF22 ➡ For each filter cell(filter4 to 12) D04 DEMIF22 substrate Vcc I3_die R3 10MEG 0 O3_die D1301 DEMIF30 I1_die O1_die D02 DEMIF22 D03 DEMIF22 substrate substrate Substrate Substrate substrate Substrate R95 Rcorner R96 Rcorner L126 Lcorner L127 Lcorner Substrate R97 Rpad R98 Rcorner L128 Lpad L129 Lcorner Substrate R99 Rcorner L130 Lcorner 0 Demif30 Model RS=0.7 CJO=30p M=.3333 VJ=.6 ISR=100p BV=7 IBV=1m TT=100n 4/6 Demif22 Model RS=0.7 CJO=22p M=.3333 VJ=.6 ISR=100p BV=14 IBV=1m TT=100n CAP = 0.2pF RES = 10meg Lcorner = 0.4nH Rcorner = 0.15 Lpad = 0.15nH Rpad = 0.1 EMIF11-10002C4 Aplac model (continued). 0 0 cap res I1_die I3_die 0.4nH I4 I4_die cap res I5_die cap res cap res 0.4nH I11 I6_die 0.4nH I12 res O6_die 0.4nH res O12_die 0.4nH I12_die O5 cap O11 cap cap res res O5_die 0.4nH res O11_die 0.4nH I11_die O4 cap O10 cap res O4_die 0.4nH res O10_die 0.4nH I10_die cap res 0.4nH I6 0.4nH I10 O3 cap O9 cap res O3_die 0.4nH res O9_die 0.4nH I9_die cap res 0.4nH I5 0.4nH I9 O1 cap O8 cap cap res O1_die 0.4nH res O8_die 0.4nH I8_die res cap O7 cap 0.4nH I8 cap res O7_die 0.4nH cap res 0.4nH I3 I7_die 0 res cap 0.4nH I7 cap res cap res 0.4nH I1 0 O6 res cap O12 0 0 cap res res cap 0 0 PACKING Dot identifying Pin A1 location All dimensions in mm ST ST xxx yww xxx yww xxx yww 5.5 +/- 0.05 12 +/- 0.3 1.1 +/- 0.1 ST 1.75 +/- 0.1 Ø 1.5 +/- 0.1 4 +/- 0.1 4 +/- 0.1 User direction of unreeling 5/6 EMIF11-10002C4 PACKAGE MECHANICAL DATA QFN 4x4mm DIMENSIONS REF. Millimeters Min. A A1 Max. A 0.80 1.00 0.031 0.040 0 0.05 0 0.002 2 3 E1 A2 0.65 D 4.00 0.157 D1 3.75 0.148 E 4.00 0.157 E1 3.75 Ø Ø P D2 R 1 2 3 0.80 0.026 0.031 E Ne Q Typ. A1 1 b Min. D Nd SEATING PLANE Inches Max. D1 A2 Ø 0.50 Typ. E2 0.148 12° 12° P 0.24 0.42 0.60 0.009 0.017 0.024 R 0.13 0.17 0.23 0.005 0.007 0.009 e 0.50 0.020 N 24.00 0.945 Nd 6.00 0.236 Ne 6.00 0.236 L e L 0.30 b 0.18 Q 0.40 0.50 0.012 0.30 0.007 0.20 0.45 0.016 0.020 0.008 0.018 0.012 D2 1.95 2.10 2.25 0.077 0.083 0.089 E2 1.95 2.10 2.25 0.077 0.083 0.089 OTHER INFORMATION Ordering code Marking Package Weight Base qty Delivery mode EMIF11-10002C4 E11U QFN 4x4mm 235 mg 4000 Tape & reel (7”) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 6/6