MJD122 Low voltage power Darlington transistor Features ■ Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 (IPAK) power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”) 1 Applications ■ 3 3 1 TO-251 TO-252 IPAK DPAK (suffix “-1”) General purpose switching and amplifier 2 (suffix “T4”) Description The device is manufactured using Epitaxial-base technology for high performance. PNP type is MJD127. Figure 1. Internal schematic diagram R1 typ. =10 KW R2 typ. =150 W Table 1. Device summary Order code Marking Package Packaging MJD122T4 MJD122 TO-252 (DPAK) Tape & reel MJD122-1 MJD122 TO-251 (IPAK) Tube October 2007 Rev 10 1/9 www.st.com 9 Electrical ratings 1 MJD122 Electrical ratings Table 2. Absolute maximum rating Symbol Value Unit VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-base voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 8 A Collector peak current 16 A Base current 0.12 A PTOT Total dissipation at T case = 25°C Total dissipation at T amb = 25°C 20 1.75 W W Tstg Storage temperature -65 to 150 °C 150 °C IC ICM IB TJ 2/9 Parameter Max. operating junction temperature MJD122 2 Electrical characteristics Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol ICBO Parameter Collector cut-off current (IE = 0) Test Conditions Min. Typ. Max. Unit VCB = 100 V 10 µA ICEO Collector cut-off current (IB = 0) VCE = 50 V 10 µA IEBO Emitter cut-off current (IC = 0) VEB = 5V 2 mA Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) 100 IC = 4 A _ IB = 16 mA IC = 8 A Base-emitter saturation voltage Base-emitter on voltage VCE(sat) (1) Collector-emitter saturation voltage VBE(sat) (1) VBE(on) (1) hFE IC =30 mA DC current gain V _ IB = 80 mA 2 4 V V IC = 8 A _ IB = 80 mA 4.5 V IC = 4 A _ VCE = 4 V 2.8 V IC = 4A VCE = 4 V 1000 IC = 8 A VCE = 4 V 100 12000 Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% 2.1 Electrical characteristic (curves) Figure 2. Safe operating area Figure 3. Derating curve 3/9 Electrical characteristics 4/9 MJD122 Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage Figure 6. Base-emitter on voltage Figure 7. DC current gain Figure 8. Resistive load switching time Figure 9. Freewheel diode forward voltage MJD122 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/9 Package mechanical data MJD122 TO-251 (IPAK) MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.028 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 B3 0.85 B5 0.033 0.30 B6 0.012 0.95 0.037 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.237 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 15.90 16.30 0.626 0.642 L 9.00 9.40 0.354 0.370 L1 0.80 1.20 0.031 0.047 L2 0.80 V1 10o 1.00 0.031 0.039 10o P032N_E 6/9 MJD122 Package mechanical data TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. 0.094 MAX. A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 L4 V2 0.8 0.60 0 o 0.398 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 7/9 Revision history 4 MJD122 Revision history Table 4. 8/9 Document revision history Date Revision Changes 01-Aug-2002 8 01-Oct-2007 9 Collector current limits have been improved. 03-Oct-2007 10 Package change from SOT-32 to TO-252. MJD122 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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