MJE802 ® SILICON NPN POWER DARLINGTON TRANSISTOR ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package. It is intended for use in medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Base-Emitter Voltage (I C = 0) 5 V IC Collector Current 4 A IB Base Current 0.1 A P tot Total Power Dissipation at T case ≤ 25 o C 40 W T stg Storage Temperature Tj Max Operating Junction Temperature September 2003 -65 to 150 o C 150 o C 1/4 MJE802 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient o 3.13 Max C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit Collector Cut-off Current (I E = 0) V CB = rated V CBO V CB = rated V CBO T case = 100 o C 100 µA 500 µA I CEO Collector Cut-off Current (I B = 0) V CE = rated V CEO 100 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA I CBO Collector-Emitter V CEO(sus) ∗ Sustaining Voltage (I B = 0) 80 I C = 50 mA V Collector-Emitter Saturation Voltage IC = 4 A I C = 1.5 A I B = 40 mA I B = 30 mA 3 2.5 V V V BE ∗ Base-Emitter Voltage IC = 4 A I C = 1.5 A V CE = 3 V V CE = 3 V 3 2.5 V V h FE ∗ DC Current Gain IC = 4 A I C = 1.5 A V CE = 3 V V CE = 3 V Small Signal Current Gain I C = 1.5 A f = 1 MHz V CE = 3 V V CE(sat) ∗ hfe * Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5% Safe Operating Area 2/4 Min. 100 750 1 MJE802 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 7.4 7.8 0.291 TYP. MAX. 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 G 3 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 I 1.27 0.084 0.05 O 0.3 0.011 V 10o 10o 1: Base 2: Collector 3: Emitter 0016114/B 3/4 MJE802 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4