STX112 ® SILICON NPN POWER DARLINGTON TRANSISTOR ■ ■ MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The device is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-92 plastic package. It is intented for use in linear and switching applications. Ordering codes: STX112 STX112-AP TO-92 (shipment in bulk) (shipment in ammopack) INTERNAL SCHEMATIC DIAGRAM R 1 Typ.= 7K Ω R 2 Typ.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 2 A Collector Peak Current 4 A mA IC I CM Base Current 50 P tot Total Dissipation at T amb = 25 o C 1.2 T stg Storage Temperature IB Tj Max. Operating Junction Temperature October 2000 W -65 to 150 o C 150 o C 1/5 STX112 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient Max o 104 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CEO Collector Cut-off Current (I B = 0) V CE = 50 V 2 mA I CBO Collector Cut-off Current (I E = 0) V CB = 100 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ I C = 30 mA 100 Collector-Emitter Saturation Voltage IC = 2 A I B = 8 mA V BE ∗ Base-Emitter Voltage IC = 2 A V CE = 4 V h FE ∗ DC Current Gain IC = 1 A IC = 2 A V CE = 4 V V CE = 4 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/5 Min. Derating Curve 1000 500 V 2.5 V 2.8 V STX112 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Freewheel Diode Forward Voltage 3/5 STX112 TO-92 MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. TYP. MAX. A 4.58 5.33 0.180 0.210 B 4.45 5.2 0.175 0.204 C 3.2 4.2 0.126 0.165 D 12.7 E 4/5 TYP. 0.500 1.27 F 0.4 G 0.35 0.050 0.51 0.016 0.14 0.020 STX112 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5