STMICROELECTRONICS STX112

STX112
®
SILICON NPN POWER
DARLINGTON TRANSISTOR
■
■
MONOLITHIC DARLINGTON
CONFIGURATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■
DESCRIPTION
The device is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in TO-92 plastic package. It is intented
for use in linear and switching applications.
Ordering codes:
STX112
STX112-AP
TO-92
(shipment in bulk)
(shipment in ammopack)
INTERNAL SCHEMATIC DIAGRAM
R 1 Typ.= 7K Ω
R 2 Typ.= 230
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Base Voltage (I E = 0)
100
V
V CEO
Collector-Emitter Voltage (I B = 0)
100
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
Collector Current
2
A
Collector Peak Current
4
A
mA
IC
I CM
Base Current
50
P tot
Total Dissipation at T amb = 25 o C
1.2
T stg
Storage Temperature
IB
Tj
Max. Operating Junction Temperature
October 2000
W
-65 to 150
o
C
150
o
C
1/5
STX112
THERMAL DATA
R thj-amb
Thermal Resistance Junction-ambient
Max
o
104
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 50 V
2
mA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 100 V
1
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
2
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat) ∗
I C = 30 mA
100
Collector-Emitter
Saturation Voltage
IC = 2 A
I B = 8 mA
V BE ∗
Base-Emitter Voltage
IC = 2 A
V CE = 4 V
h FE ∗
DC Current Gain
IC = 1 A
IC = 2 A
V CE = 4 V
V CE = 4 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/5
Min.
Derating Curve
1000
500
V
2.5
V
2.8
V
STX112
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Freewheel Diode Forward Voltage
3/5
STX112
TO-92 MECHANICAL DATA
mm
inch
DIM.
MIN.
MAX.
MIN.
TYP.
MAX.
A
4.58
5.33
0.180
0.210
B
4.45
5.2
0.175
0.204
C
3.2
4.2
0.126
0.165
D
12.7
E
4/5
TYP.
0.500
1.27
F
0.4
G
0.35
0.050
0.51
0.016
0.14
0.020
STX112
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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