PD55025-E PD55025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 14.5dB gain @ 500MHz / 12.5V ■ New RF plastic package PowerSO-10RF (formed lead) Description The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55025’s superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-10RF (straight lead) Pin connection Source The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Order codes May 2006 Part number Package Packing PD55025-E PowerSO-10RF (formed lead) Tube PD55025S-E PowerSO-10RF (straight lead) Tube PD55015TR-E PowerSO-10RF (formed lead) Tape and reel PD55015STR-E PowerSO-10RF (straight lead) Tape and reel Rev 1 1/22 www.st.com 22 Contents PD55025-E, PD55025S-E Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.1 PD55025S (VDS = 12.5V ID = 500mA) . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.2 PD55025S (VDS = 12.5V ID = 1.5A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.3 PD55025S (VDS = 12.5V ID = 3A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7.4 PD55025S (VDS = 13.8V IDS = 3A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 PD55025-E, PD55025S-E Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25°C) Symbol Value Unit V(BR)DSS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V Drain current 7 A Power dissipation (@ TC = 70°C) 79 W Max. operating junction temperature 165 °C -65 to +150 °C Value Unit 1.2 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage temperature Thermal data Table 2. Symbol RthJC Thermal data Parameter Junction - case thermal resistance 3/22 Electrical Characteristics 2 PD55025-E, PD55025S-E Electrical Characteristics TCASE = +25 oC 2.1 Static Table 3. Static Symbol 2.2 Test conditions Min. Max. Unit IDSS VGS = 0V VDS = 28V 1 µA IGSS VGS = 20V VDS = 0V 1 µA VGS(Q) VDS = 28V ID = 100mA 5.0 V VDS(ON) VGS = 10V ID = 3A 0.8 V GFS VDS = 10V ID = 3A CISS VGS = 0V VDS = 12.5V f = 1MHz 86 pF COSS VGS = 0V VDS = 12.5V f = 1MHz 76 pF CRSS VGS = 0V VDS = 12.5V f = 1MHz 5.8 pF 2.0 0.7 2.5 mho Dynamic Table 4. Symbol POUT Dynamic Test conditions VDD = 12.5V, IDQ = 200mA Min. f = 500MHz Typ. 25 Max. Unit W GP VDD = 12.5V, IDQ = 200mA, POUT = 25W, f = 500MHz 14.5 dB hD VDD = 12.5V, IDQ = 200mA, POUT = 25W, f = 500MHz 50 % Load VDD = 15.5V, IDQ = 200mA, POUT = 25W, f = 500MHz mismatch All phase angles 4/22 Typ. 20:1 VSWR PD55025-E, PD55025S-E 3 Impedance Impedance Figure 1. Current conventions Table 5. Impedance data Freq. (MHz) ZIN (Ω) ZDL(Ω) 175 3.20 - j 4.41 1.56 + j 2.14 480 1.01 - j 1.67 1.06 + j 0.22 500 0.93 - j 1.53 1.12 + j 0.20 520 0.88 - j 1.98 1.07 + j 0.83 5/22 Typical performance PD55025-E, PD55025S-E 4 Typical performance Figure 2. Capacitance vs supply voltage Figure 3. 1000 Drain current vs gate source voltage 6 Vds = 10 V 5 C is s 100 4 Id (A) C (pF) C os s 10 3 2 C rs s 1 f = 1 MHz 1 0 0 4 8 12 16 20 24 28 2.0 2.5 3.0 Figure 4. 3.5 4.0 4.5 5.0 5.5 Vgs (V) Vds (V) Gate-source voltage vs case temperature Figure 5. Output power vs input power 45 1.04 480 MHz 40 500 MHz 520 MHz 1.02 35 Id = 5 A Id (A) Id = 4 A Id = 3 A Pout (W) 30 1.00 25 20 0.98 Id = 2 A 15 Id = 1 A 10 0.96 Id = .5 A 0.94 -25 0 25 50 Vgs (V) 6/22 Vdd = 12.5 V Idq = 200 m A 5 Vds = 10 V 75 100 0 0.00 1.00 2.00 3.00 P in (W ) 4.00 5.00 6.00 PD55025-E, PD55025S-E Figure 6. Typical performance Output power vs input power Figure 7. 45 18 40 Vdd = 13.8 V 16 35 14 Vdd = 12.5 V 30 12 25 Gp (dB) Pout (W) Power gain vs. output power 20 15 480 MHz 10 520 MHz 8 6 10 4 f = 520 MHz Idq = 200 m A 5 0 1 2 3 4 5 Vdd = 12.5 V Idq = 200 m A 2 0 0 6 0 10 20 30 Pin (W ) Figure 8. 40 50 P out (W ) Drain efficiency vs output power Figure 9. Input return loss vs output power 0 70 Vdd = 12.5 V Idq = 200 m A -5 60 500 MHz -10 50 -15 480, 520 MHz 40 RL (dB) Nd (%) 500 MHz 30 480 MHz -20 -25 500 MHz 20 -30 Vdd = 12.5 V Idq = 200 m A 10 520 MHz -35 0 -40 0 10 20 30 P out (W ) 40 50 0 10 20 30 40 50 P out (W ) 7/22 Typical performance PD55025-E, PD55025S-E Figure 10. Output power vs bias current Figure 11. Drain efficiency vs bias current 40 60 35 500 MHz 50 480 MHz 520 MHz 30 480 MHz 520 MHz Nd (%) Pout (W) 40 500 MHz 25 20 30 15 20 10 10 5 Vdd = 12.5 V Pin = 0.85 W Vdd = 12.5 V Pin = 0.85 W 0 0 0 200 400 600 800 1000 0 1200 200 400 600 800 1000 1200 Idq (m A) Idq (m A) Figure 12. Output power vs supply voltage Figure 13. Drain efficiency vs supply voltage 70 35 480 MHz 60 30 500 MHz 500 MHz 50 25 500 MHz 20 Nd (%) Pout (W) 520 MHz 520 MHz 15 30 10 20 Idq = 200 m A P in = 0.85 W 5 10 0 Idq = 200 m A Pin = 0.85 W 0 5 7 9 11 13 Vdd (V) 8/22 40 15 17 19 6 8 10 12 Vdd (V) 14 16 18 PD55025-E, PD55025S-E Typical performance Figure 14. Output power vs gate bias voltage Figure 15. Output power vs input power (f = 175 MHz) 30 45 40 25 35 30 480 MHz 15 Pout (W) Pout (W) 20 500 MHz 25 20 520 MHz 15 10 10 5 Vdd = 12.5 V Idq = 200 m A 5 Vdd = 12.5 V Pin = 0.85 W 0 0 0 1 2 3 0 4 0.5 1 1.5 2 2.5 Pin (W ) Vgs (V) Figure 16. Power gain vs output power (f = 175 MHz) Figure 17. Drain efficiency vs output power (f = 175 MHz) 30 80 70 25 60 20 Nd (%) Gp (W) 50 15 40 30 10 20 Vdd = 12.5 V Idq = 200 m A 5 Vdd = 12.5 V Idq = 200 m A 10 0 0 0 10 20 30 P out (W ) 40 50 0 10 20 30 40 50 P out (W ) 9/22 Typical performance PD55025-E, PD55025S-E Figure 18. Input return loss vs output power (f = 175 MHz) 0 -5 RL (dB) -10 -15 -20 Vdd = 12.5 V Idq = 200 m A -25 -30 0 10 20 30 P out (W ) 10/22 40 50 PD55025-E, PD55025S-E 5 Test circuit Test circuit Figure 19. 500MHz test circuit schematic (engineering) VGG + B1 + C10 C9 R3 C8 VDD B2 R2 C18 C19 C17 C16 L1 C7 R1 RF INPUT Z1 Z3 Z4 DUT Z5 Z6 Z7 C1 C2 Table 6. Z2 C3 C4 C5 C6 Z8 C13 C12 Z9 C15 N2 RF OUTPUT C14 C11 Test circuit component part list Component B1,B2 Description FERRITE BEAD C1,C13 300 pF, 100 mil CHIP CAPACITOR C2,C3,C4,C12,C13,C14 1 to 20 pF TRIMMER CAPACITOR C6 39 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C7, C19 120 pF 100 mil CHIP CAPACITOR C10, C16 10 µF, 50 V ELECTROLYTIC CAPACITOR C9, C17 0.1 mF, 100 mil CHIP CAP C8, C18 1.000 pF 100 mil CHIP CAP C5, C11 33 pF, 100 mil CHIP CAP L1 56 nH, 7 TURN, COILCRAFT N1, N2 TYPE N FLANGE MOUNT R1 15 Ω, 1 W CHIP RESISTOR R2 1 KΩ, 1 W CHIP RESISTOR R3 33 KΩ, 1 W CHIP RESISTOR Z1 0.471” X 0.080” MICROSTRIP Z2 1.082” X 0.080” MICROSTRIP Z3 0.372” X 0.080” MICROSTRIP Z4,Z5 0.260” X 0.223” MICROSTRIP Z6 0.050” X 0.080” MICROSTRIP Z7 0.551” X 0.080” MICROSTRIP Z8 0.825” X 0.080” MICROSTRIP Z9 0.489” X 0.080” MICROSTRIP BOARD ROGER, ULTRA LAM 2000 THK 0.030”, ε r = 2.55 2oz. ED cu 2 SIDES. 11/22 Circuit layout 6 PD55025-E, PD55025S-E Circuit layout Figure 20. 500MHz test circuit BIAS Figure 21. 500MHz test circuit photomaster 12/22 VDD GND PD55025-E, PD55025S-E Circuit layout Figure 22. 175MHz test circuit schematic (engineering) ) C 8 C 9 C 1 0 F B 2 + V D D C 1 1 R 1 ) F B 1 + V G G C 1 3 C 1 2 C 1 6 R 2 C 1 4 C 1 5 L 1 R 3 R F IN P U T C 6 C 1 C 2 C 3 R 5 C 4 R F O U T P U T C 5 R 4 C 7 Table 7. 175MHz test circuit component part list Component Description C1, C6 300 pF CHIP CAPACITOR C2, C3 91 pF CHIP CAPACITOR C4, C14 75 pF CHIP CAPACITOR C5 1-20 pF TRIMMER CAPACITOR C7 .01 µF MOLDED CAPACITOR C8, C13 10 µF ELECTROLYTIC CAPACITOR C9, C12 .1 µF CHIP CAPACITOR C10, C11 1000 pF CHIP CAPACITOR C15, C16 1200 pF CHIP CAPACITOR FB1, FB2 FERRITE BEAD R1 33 KΩ CHIP RESISTOR R2 17 Ω CHIP RESISTOR R3 15 Ω CHIP RESISTOR R4 47 Ω CHIP RESISTOR R5 220 Ω CHIP RESISTOR L1 5 TURN, 16 AWG MAGNET WIRE, ID = .40” ,INDUCTOR BOARD ROGER, ULTRA LAM 2000, THK 0.030”, ε r = 2.55 2oz. ED cu 2 SIDES. 13/22 Common source s-parameter PD55025-E, PD55025S-E 7 Common source s-parameter 7.1 PD55025S (VDS = 12.5V ID = 500mA) Table 8. 7.2 FREQ IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.837 0.846 0.862 0.878 0.895 0.910 0.921 0.932 0.941 0.946 0.953 0.957 0.960 0.964 0.966 0.968 0.970 0.971 0.972 0.972 -162 -169 -171 -173 -174 -174 -175 -176 -177 -178 -178 -179 -180 180 179 178 178 177 177 176 13.33 6.51 4.15 2.93 2.20 1.71 1.36 1.11 0.92 0.78 0.66 0.57 0.50 0.44 0.39 0.95 0.31 0.28 0.26 0.23 89 76 66 58 51 45 40 35 31 27 24 21 18 16 14 12 10 8 6 5 0.018 0.017 0.016 0.015 0.013 0.012 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.004 0.003 0.002 0.002 0.002 0.002 0.003 -1 -12 -19 -26 -31 -36 -40 -42 -43 -44 -43 -42 -39 -34 -29 -15 -2 16 34 45 0.780 0.803 0.831 0.859 0.874 0.886 0.892 0.897 0.915 0.932 0.946 0.964 0.975 0.976 0.981 0.979 0.964 0.960 0.953 0.940 -168 -172 -172 -172 -172 -173 -173 -175 -176 -177 -178 -179 -178 -179 -179 -179 -179 180 179 178 PD55025S (VDS = 12.5V ID = 1.5A) Table 9. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 14/22 S-parameter S-parameter IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ 0.876 0.880 0.887 0.895 0.905 0.915 0.922 0.931 0.938 0.942 0.948 0.952 0.954 0.959 0.961 0.963 0.966 0.967 0.968 0.968 -164 -172 -174 -175 -176 -176 -177 -178 -178 -179 -179 -180 180 179 178 178 177 177 176 176 13.87 6.87 4.46 3.22 2.47 1.96 1.60 1.32 1.11 0.95 0.82 0.71 0.63 0.55 0.49 0.45 0.40 0.36 0.33 0.30 90 79 71 64 58 52 47 42 38 34 31 28 25 22 20 17 15 13 11 9 0.013 0.012 0.012 0.011 0.010 0.009 0.009 0.008 0.007 0.006 0.005 0.005 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 1 -7 -13 -18 -22 -25 -28 -30 -31 -31 -30 -27 -22 -16 -6 3 17 27 38 45 0.823 0.838 0.855 0.873 0.879 0.885 0.886 0.889 0.906 0.923 0.937 0.956 0.967 0.969 0.973 0.970 0.956 0.952 0.945 0.933 -172 -175 -176 -175 -175 -175 -175 -177 -178 -179 -179 -179 -179 -179 -179 -179 -180 179 179 177 PD55025-E, PD55025S-E 7.3 PD55025S (VDS = 12.5V ID = 3A) Table 10. FREQ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 7.4 Common source s-parameter S-parameter IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ 0.890 0.892 0.898 0.904 0.913 0.921 0.926 0.935 0.941 0.944 0.949 0.953 0.955 0.959 0.961 0.963 0.966 0.967 0.968 0.969 -165 -172 -174 -175 -176 -177 -177 -178 -179 -179 -180 180 179 179 178 177 177 176 176 175 13.19 6.55 4.28 3.11 2.39 1.91 1.57 1.31 1.10 0.94 0.82 0.71 0.63 0.56 0.50 0.45 0.41 0.37 0.34 0.31 91 81 73 66 60 54 49 44 40 36 33 29 26 24 21 19 17 15 15 11 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.007 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.004 2 -6 -12 -15 -20 -23 -25 -27 -28 -27 -25 -21 -17 -10 -2 10 22 32 41 49 0.837 0.846 0.865 0.879 0.883 0.089 0.887 0.889 0.905 0.921 0.936 0.954 0.964 0.965 0.968 0.966 0.952 0.948 0.942 0.930 -174 -176 -176 -176 -176 -176 -176 -177 -179 -179 -180 180 -180 -180 -180 -179 -180 180 179 177 PD55025S (VDS = 13.8V IDS = 3A) Table 11. S-parameter FREQ IS11I S11∠Φ IS21I S21∠Φ IS12I S12∠Φ IS22I S22∠Φ (MHz) 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.849 0.881 0.895 0.903 0.912 0.921 0.927 0.936 0.943 0.946 0.952 0.955 0.957 0.961 0.963 0.965 0.968 0.969 0.970 0.971 -164 -171 -173 -175 -176 -176 -177 -178 -178 -179 -180 180 179 179 178 178 177 176 176 175 13.99 6.94 4.51 3.27 2.50 1.99 1.62 1.35 1.13 0.97 0.83 0.72 0.64 0.56 0.50 0.45 0.41 0.37 0.34 0.31 91 80 72 65 58 52 47 42 38 34 31 27 24 22 19 17 15 13 11 9 0.012 0.011 0.011 0.010 0.010 0.009 0.008 0.007 0.006 0.006 0.005 0.004 0.004 0.003 0.003 0.003 0.003 0.003 0.003 0.003 2 -6 -12 -16 -21 -24 -27 -29 -29 -29 -26 -23 -17 -8 2 14 27 36 45 54 0.833 0.841 0.857 0.871 0.877 0.882 0.883 0.886 0.904 0.920 0.935 0.955 0.965 0.967 0.970 0.968 0.953 0.949 0.943 0.930 -173 -175 -175 -175 -175 -175 -176 -177 -178 -179 -179 -180 -179 -179 -179 -179 -179 180 179 178 15/22 Package mechanical data 8 PD55025-E, PD55025S-E Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 16/22 PD55025-E, PD55025S-E Table 12. Package mechanical data PowerSO-10RF Formed lead (Gull Wing) Mechanical data Dim. mm. Min. Typ. A1 0 0.05 A2 3.4 3.5 A3 1.2 1.3 A4 0.15 0.2 b 5.4 c D Min. Typ. Max. 0.1 0. 0.0019 0.0038 3.6 0.134 0.137 0.142 1.4 0.046 0.05 0.054 0.25 0.005 0.007 0.009 5.53 5.65 0.212 0.217 0.221 0.23 0.27 0.32 0.008 0.01 0.012 9.4 9.5 9.6 0.370 0.374 0.377 a Max. 0.2 0.007 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 13.85 14.1 14.35 0.544 0.555 0.565 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 L 0.8 1 R1 T 1.1 0.030 0.039 0.25 R2 Note: Inch 0.01 0.8 2 deg 5 deg 0.042 0.031 8 deg 2 deg 5 deg T1 6 deg 6 deg T2 10 deg 10 deg 8 deg Resin protrusions not included (max value: 0.15 mm per side) Figure 23. Package dimensions Critical dimensions: - Stand-off (A1) - Overall width (L) 17/22 Package mechanical data Table 13. PD55025-E, PD55025S-E PowerSO-10RF Straight Lead Mechanical data Dim. mm. Min. Typ. Max. Min. Typ. Max. A1 1.62 1.67 1.72 0.064 0.065 0.068 A2 3.4 3.5 3.6 0.134 0.137 0.142 A3 1.2 1.3 1.4 0.046 0.05 0.054 A4 0.15 0.2 0.25 0.005 0.007 0.009 a 0.2 0.007 b 5.4 5.53 5.65 0.212 0.217 0.221 c 0.23 0.27 0.32 0.008 0.01 0.012 D 9.4 9.5 9.6 0.370 0.374 0.377 D1 7.4 7.5 7.6 0.290 0.295 0.298 E 15.15 15.4 15.65 0.595 0.606 0.615 E1 9.3 9.4 9.5 0.365 0.37 0.375 E2 7.3 7.4 7.5 0.286 0.292 0.294 E3 5.9 6.1 6.3 0.231 0.24 0.247 F 0.5 0.019 G 1.2 0.047 R1 Note: Inch 0.25 0.01 R2 0.8 0.031 T1 6 deg 6 deg T2 10 deg 10 deg Resin protrusions not included (max value: 0.15 mm per side) Figure 24. Package dimensions CRITICAL DIMENSIONS: - Overall width (L) 18/22 PD55025-E, PD55025S-E Package mechanical data Figure 25. Tube information 19/22 Package mechanical data Figure 26. Reel information 20/22 PD55025-E, PD55025S-E PD55025-E, PD55025S-E 9 Revision history Revision history Table 14. Revision history Date Revision 29-Apr-2006 1 Changes Initial release. 21/22 PD55025-E, PD55025S-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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