LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package Description The LET9120 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. M246 Epoxy sealed Figure 1. Pin connection 1 2 5 4 1-2 Drain 3 Source 4-5 Gate Table 1. Device summary Order code Package Branding LET9120 M246 LET9120 October 2010 Doc ID 15509 Rev 5 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 Contents LET9120 Contents 1 2 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 Doc ID 15509 Rev 5 LET9120 Electrical data 1 Electrical data 1.1 Maximum ratings TCASE = 25 °C Table 2. Absolute maximum ratings Symbol Value Unit V(BR)DSS Drain-source voltage 80 V VGS Gate-source voltage - 0.5 / + 15 V Drain current 18 A Power dissipation (@ TC = 70 °C) 200 W Max. operating junction temperature 200 °C - 65 to + 150 °C Value Unit 0.65 °C/W ID PDISS TJ TSTG 1.2 Parameter Storage temperature Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Doc ID 15509 Rev 5 3/11 Electrical characteristics 2 LET9120 Electrical characteristics TCASE = + 25 °C 2.1 Static Table 4. Static (per section) Symbol 2.2 Test conditions Min. 80 Max. Unit V(BR)DSS VGS = 0 V IDS = 10 mA IDSS VGS = 0 V VDS = 28 V 1 µA IGSS VGS = 5 V VDS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 100 mA 5.0 V VDS(ON) VGS = 10 V ID = 3 A 1.2 V GFS VDS = 10 V ID = 3 A CISS VGS = 0 V VDS = 28 V f = 1 MHz 58 pF COSS VGS = 0 V VDS = 28 V f = 1 MHz 30 pF CRSS VGS = 0 V VDS = 28 V f = 1 MHz 0.7 pF V 2.0 0.9 2.5 mho Dynamic Table 5. Dynamic Symbol Test conditions Min. Typ. 120 150 Max. Unit POUT VDD = 32 V IDQ = 400 mA GPS VDD = 32 V IDQ = 400 mA POUT = 150 W 16 18 ηD VDD = 32 V IDQ = 400 mA POUT = 150 W 60 70 % 20:1 VSWR PIN = 2.5 W Load VDD = 32 V IDQ = 400 mA POUT = 160 W @ 860 MHz Mismatch All phase angles Table 6. 4/11 Typ. W - dB Impedance data Frequency Mhz Z source Ω (As measured in the circuit gate to gate) Z load Ω (As measured in the circuit drain to drain) 860 1.5 + j 2.2 6.2 + j 5.2 Doc ID 15509 Rev 5 LET9120 Typical performance 3 Typical performance Figure 2. Gain & efficiency vs. output power 24 80 Vdd = 28 V Idq = 400 mA Freq = 400 MHz Idq = 100 mA 60 21 50 20 40 19 30 17 20 40 60 80 100 120 140 Vdd = 32 V Freq = 860 MHz 12 0 0 18 14 10 16 20 16 20 Efficiency 0 160 40 80 Output power & efficiency vs. input Figure 5. power 200 Pin = 1.5 W 120 60 100 80 40 Vdd = 32 V Idq = 400 mA Freq = 860 MHz Output power (W) 140 20 Pin = 3.5 W 140 120 100 80 Vdd = 32 V Idq = 400 mA Freq = 860 MHz 60 20 Pin = 2.5 W 160 80 Efficiency (%) Output power (W) 160 40 200 Output power vs. drain supply voltage 180 Efficiency 60 160 200 100 Pout 180 120 Output power (W) Output Power (W) Figure 4. Idq = 800 mA 22 Gain 18 Idq = 400 mA 24 Gain (dB) 22 Gain vs. output power & bias current 26 70 Efficiency (%) 23 Gain (dB) Figure 3. 40 20 0 0 0 0.8 1.6 2.4 3.2 4 4.8 0 22 Input power (W) 24 26 28 30 32 34 Supply voltage (V) Doc ID 15509 Rev 5 5/11 Test circuit LET9120 4 Test circuit Figure 6. Test circuit schematic - 860 MHz R1 Vgg C1 C2 R2 C5 T L4 C8 F B1 VDD C7 T L9 Vdd G C 11 T L1 C 13 T L2 T L3 C 15 D T L10 S DUT T r1 C 16 Input T L11 T L12 C 17 C 18 C 19 Output T r2 Ballun2 S C 12 Ballun1 T L5 C 14 T L6 T L7 G D T L14 T L15 T L16 C 20 Vdd T L8 T L13 C4 C3 Vgg C6 R4 F B2 R3 C 10 C9 VDD AM07851v1 Table 7. Circuit component list Item Q.ty Part number Vender R1, R3 2 CR1206-8W-130JB VENKEL 13 Ω, 1/8 W surface mount chip resistor R2, R4 2 CR1206-8W-122JB VENKEL 1.2 kΩ, 1/8 W surface mount chip resistor R5, R6 2 CR1206-8W-250JB VENKEL 25 Ω, 1/8 W surface mount chip resistor B1, B2 2 2743021447 C1, C3, C7, C9 4 C2, C4, C5, C6 4 ATC100B910XXXX ATC C8, C10 2 C1812X7R501-104KNE VENKEL C11, C12 2 ATC100B620XXXX ATC 62 pF chip capacitor C13, C14 2 ATC100B151XXXX ATC 150 pF chip capacitor C15 1 ATC100B110XXXX ATC 11 pF chip capacitor C16 1 ATC100B7R5XXXX ATC 7.5 pF chip capacitor C17 1 ATC100B1R1XXXX ATC 1.1 pF chip capacitor C18 1 27291PC JOHANSON 6/11 Description FAIR-RITE CORP Surface mount EMI shield bead 100 µF, 63 V electrolytic capacitor Doc ID 15509 Rev 5 91 pF chip capacitor 0.1 F 500 V surface mount ceramic chip capacitor 0.8 - 8 pF giga trim variable capacitor LET9120 Table 7. Test circuit Circuit component list (continued) Item Q.ty Part number Vender C19, C20 2 ATC100B101XXXX ATC Description 100 pF chip capacitor TL1, TL5 L= 0.250in [6.35mm] W=0.214in [5.44mm] TL2, TL6 L= 0.182in [4.62mm] W=0.284in [7.21mm] TL3, TL7 L= 0.318in [8.08mm] W=0.284in [7.21mm] TL4, TL8, TL9, TL13 L= 2.37in [60.19mm] W=0.082in [2.08mm] TL10, TL14 L= 0.314in [7.97mm] W=0.230in [5.84mm] TL11, TL15 L= 0.460in [11.68mm] W=0.230in [5.84mm] TL12, TL16 L= 0.280in [7.11mm] Board 3X5 1 Rogers Corp Doc ID 15509 Rev 5 Er=2.55 t=0.0026in W=0.230in [5.84mm] h=0.030in 7/11 Package mechanical data 5 LET9120 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 8/11 Doc ID 15509 Rev 5 LET9120 Package mechanical data Table 8. M246 (0.230 x 0.650 WIDE 4/L BAL N/HERM W/FLG) mechanical data mm. Inch. Dim. Min. Typ. Max. Min. Typ. Max. A 5.33 5.59 0.210 0.220 B 6.48 6.73 0.255 0.265 C 17.27 18.29 0.680 0.720 D 5.72 5.97 0.225 0.235 E 22.86 .900 F 28.83 29.08 1.135 1.145 G 16.26 16.76 0.640 0.660 H 4.19 5.08 0.165 0.200 I 0.08 0.15 0.003 0.006 J 1.83 2.24 0.072 0.088 K 1.40 1.65 0.055 0.065 L 3.18 3.43 0.125 0.135 Figure 7. Package dimensions Controlling dimension: Inches Ref. 7145054A Doc ID 15509 Rev 5 9/11 Revision history 6 LET9120 Revision history Table 9. 10/11 Document revision history Date Revision Changes 10-Mar-2009 1 First Issue. 22-Jul-2009 2 Updated document’s title. 18-Nov-2009 3 Updated VGS in Table 2. 11-Feb-2010 4 Changed test condition for V(BR)DSS in Table 4: Static (per section). 22-Oct-2010 5 Added: Typical performance on page 5 and Test circuit on page 6. Doc ID 15509 Rev 5 LET9120 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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