STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65Ω - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) (@Tjmax) ID PW STB12NK80Z 800V <0.75Ω 10.5 A 190W STP12NK80Z 800V <0.75Ω 10.5 A 190W 3 1 STW12NK80Z 800V <0.75Ω 10.5 A 190W ■ Extremely high dv/dt capability ■ Improved esd capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing reliability 2 TO-220 TO-247 3 1 D2PAK Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Application ■ Switching application Order codes Part number Marking Package Packaging STB12NK80Z B12NK80Z D2PAK Tape & reel STP12NK80Z P12NK80Z TO-220 Tube STW12NK80Z W12NK80Z TO-247 Tube April 2007 Rev 6 1/16 www.st.com 16 Contents STB12NK80Z - STP12NK80Z - STW12NK80Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STB12NK80Z - STP12NK80Z - STW12NK80Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Drain-source voltage (VGS = 0) 800 V Drain-gate voltage (RGS = 20KΩ) 800 V Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 10.5 A ID VDS VDGR VGS Parameter Drain current (continuous) at TC=100°C 6.6 A IDM(1) Drain current (pulsed) 42 A PTOT Total dissipation at TC = 25°C 190 W Derating Factor 1.51 W/°C Peak diode recovery voltage slope 4.5 V -55 to 150 °C dv/dt(2) TJ Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤10.5 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Thermal data Value Symbol Rthj-case Rthj-a Tl Table 3. Symbol Parameter TO-220/ D²PAK Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Unit TO-247 0.66 62.5 °C/W 50 °C/W 300 °C Value Unit Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 10.5 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 400 mJ 3/16 Electrical characteristics 2 STB12NK80Z - STP12NK80Z - STW12NK80Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1mA, VGS= 0 IDSS Peak diode recovery voltage slope VDS =Max rating, VDS =Max rating, Tc=125°C IGSS Gate body leakage current VGS = ± 20V (VGS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA RDS(on) Static drain-source on resistance VGS= 10V, ID = 5.25A Table 5. Symbol gfs (1) Min. Typ. Max. Unit 800 3 V 1 50 µA µA ±10 µA 3.75 4.5 V 0.65 0.75 Ω Typ. Max. Unit Dynamic Parameter Test conditions Forward transconductance VDS =15V, ID = 5.25A Min. 12 S Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 2620 250 53 pF pF pF Equivalent output capacitance VGS=0, VDS =0V to 640V 100 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=640V, ID = 10.5A VGS =10V (see Figure 18) 87 14 44 nC nC nC td(on) tr td(off) tf Turn-on delay time Rise time Off-voltage rise time Fall time VDD=400 V, ID= 5.25A, RG=4.7Ω, VGS=10V (see Figure 19) 30 18 70 20 ns ns ns ns tr(Voff) tf tc Off voltage rise time Fall time Cross-over time VDD=640 V, ID= 10.5A, RG=4.7Ω, VGS=10V (see Figure 19) 16 15 28 ns ns ns Ciss Coss Crss Cosseq(2) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Table 6. Symbol ISD Source drain diode Parameter Test conditions Source-drain current (pulsed) (2) Forward on voltage ISD=10.5A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10.5A, di/dt = 100A/µs, VDD=100V, Tj=150°C trr Qrr IRRM Min Typ. Source-drain current (1) ISDM VSD Electrical characteristics Max Unit 10.5 A 42 A 1.6 V 635 5.9 18.5 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Table 7. Symbol BVGSO(1) Gate-source zener diode Parameter Gate-Source breakdown voltage Test conditions Igs=±1mA (Open drain) Min 30 Typ. Max Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ D²PAK Figure 2. Thermal impedance for TO-220/ D²PAK Figure 3. Safe operating area for TO-247 Figure 4. Thermal impedance for TO-247 Figure 5. Output characteristics Figure 6. Transfer characteristics 6/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Electrical characteristics Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics Figure 15. Maximum avalanche energy vs temperature 8/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 14. Normalized BVDSS vs temperature STB12NK80Z - STP12NK80Z - STW12NK80Z 3 Test circuit Package mechanical data Test circuit Package mechanical data Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform 9/16 Package mechanical data 4 STB12NK80Z - STP12NK80Z - STW12NK80Z Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/16 Package mechanical data STB12NK80Z - STP12NK80Z - STW12NK80Z TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 12/16 TYP 5.50 0.216 STB12NK80Z - STP12NK80Z - STW12NK80Z Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 10.4 0.393 D1 E 8 10 E1 0.315 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 13/16 Packing mechanical data 5 STB12NK80Z - STP12NK80Z - STW12NK80Z Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB12NK80Z - STP12NK80Z - STW12NK80Z 6 Revision history Revision history Table 8. Revision history Date Revision Changes 22-Jun-2004 2 Preliminary version 28-Jan-2005 3 Complete version 08-Sep-2005 4 Figure 1 and Figure 3 changed 31-Jul-2006 5 The document has been reformatted 27-Apr-2007 6 Modified Rds(on) value on Table 4 15/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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