STMICROELECTRONICS STGP10NB60SFP

STGP10NB60S
STGP10NB60SFP- STGB10NB60S
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D²PAK
PowerMESH™ IGBT
Figure 1: Package
Table 1: General Features
TYPE
VCES
VCE(sat) (Max)
@25°C
IC
@100°C
STGP10NB60S
STGP10NB60SFP
STGB10NB60S
600 V
600 V
600 V
< 1.7 V
< 1.7 V
< 1.7 V
10 A
10 A
10 A
■
■
■
■
HIGHT INPUT IMPEDANCE (VOLTAGE
DRIVEN)
VERY LOW ON-VOLTAGE DROP( Vcesat )
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve
minimum on-voltage drop for low frequency applications (<1kHz).
3
1
3
2
1
TO-220FP
2
TO-220
3
1
D²PAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL
■
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGP10NB60S
GP10NB60S
TO-220
TUBE
STGP10NB60SFP
GP10NB60SFP
TO-220FP
TUBE
STGB10NB60ST4
GB10NB60S
D²PAK
TAPE & REEL
Rev.2
February 2005
1/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
TO-220/D²PAK
TO-220FP
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
± 20
V
20
A
Collector Current (continuous) at 100°C
10
A
Collector Current (pulsed)
80
A
IC
IC
ICM (1)
PTOT
Collector Current (continuous) at 25°C
Total Dissipation at TC = 25°C
Derating Factor
VISO
Insulation Withstand Voltage A.C.(t=1sec, Tc=25°C)
Tstg
Storage Temperature
Tj
80
25
W
0.64
0.20
W/°C
--
2500
V
– 55 to 150
Operating Junction Temperature
°C
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Typ.
TO-220
D²PAK
TO-220FP
TL
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
Max.
Unit
1.56
°C/W
5.0
°C/W
62.5
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collectro-Emitter
Breakdown Voltage
IC = 250 µA, VGE = 0
600
V
VBR(ECS)
Emitter-Collector
Breakdown Voltage
IC = 1mA, VGE = 0
20
V
ICES
Collector cut-off
(VGE = 0)
VGE = Max Rating, Tc=25°C
VCE = Max Rating, Tc=125°C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V , VCE = 0
±100
nA
Max.
Unit
5
V
1.7
V
V
V
Table 6: On
Symbol
VGE(th)
VCE(SAT)
2/13
Parameter
Test Conditions
Gate Threshold Voltage
VCE= VGE, IC= 250 µA
Collector-Emitter
Saturation Voltage
VGE=15 V, IC= 5 A,
VGE=15 V, IC= 10 A,
VGE=15 V, IC= 10 A, Tj= 125°C
Min.
Typ.
2.5
1.15
1.35
1.25
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Forward Transconductance
VCE = 25 V , IC = 10 A
Cies
Input Capacitance
VCE = 25 V, f= 1 MHz, VGE = 0
Coes
Min.
Typ.
Max.
Unit
7
S
610
pF
Output Capacitance
65
pF
Cres
Reverse Transfer
Capacitance
12
pF
Qg
Total Gate Charge
VCE = 400 V, IC = 10 A,
VGE = 15 V
(see Figure 20)
33
nC
ICL
Latching Current
Vclamp = 480 V , Tj = 150°C
RG = 1 kΩ
20
A
Table 8: Switching On
Symbol
td(on)
tr
(di/dt)on
Eon (1)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Current Rise Time
VCC = 480 V, IC = 10 A RG=1KΩ
VGE = 15 V
(see Figure 18)
0.7
0.46
µs
µs
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 10 A RG=1KΩ
VGE =15 V,Tj = 125°C
8
0.6
A/µs
mJ
Table 9: Switching Off
Symbol
tc
tr(Voff)
tf
Eoff (**)
tc
tr(Voff)
tf
Eoff (**)
Parameter
Cross-Over Time
Off Voltage Rise Time
Current Fall Time
Test Conditions
Vcc = 480 V, IC = 10 A,
RG = 10 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 18)
Turn-off Switching Loss
Cross-Over Time
Off Voltage Rise Time
Current Fall Time
Vcc = 480 V, IC = 10 A,
RG = 10 Ω , VGE = 15 V
TJ = 125 °C
(see Figure 18)
Turn-off Switching Loss
Min.
Typ.
Max.
Unit
2.2
µs
1.2
µs
1.2
µs
5.0
mJ
3.8
µs
1.2
µs
1.9
µs
8.0
mJ
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail ( Jedec Standardization)
3/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Gate Thereshold vs Temperature
4/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Figure 9: Capacitance Variations
Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Off Losses vs Gate Resistance
Figure 13: Off Losses vs Temperature
Figure 11: Normalized Breakdown Voltage vs
Temperature
Figure 14: Off Losses vs Collector Current
5/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Figure 15: Thermal Impedance For TO-220/
D²PAK
Figure 16: Turn-Off SOA
6/13
Figure 17: Thermal Impedance For TO-220FP
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Figure 18: Test Circuit for Inductive Load
Switching
Figure 20: Gate Charge Test Circuit
Figure 19: Switching Waveforms
7/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
8/13
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
9/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
TO-263 (D 2PAK) MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
4.32
MIN.
4.57
0.178
0.180
A1
0.00
0.25
0.00
0.009
TYP.
MAX.
b
0.71
0.91
0.028
0.350
b2
1.15
1.40
0.045
0.055
c
0.46
0.61
0.018
0.024
c2
1.22
1.40
0.048
0.055
D
8.89
9.40
0.350
D1
8.01
E
10.04
e
10/13
TYP
9.02
0.355
0.370
0.315
10.28
0.395
2.54
0.404
0.010
H
13.10
13.70
0.515
0.540
L
1.30
1.70
0.051
0.067
L1
1.15
1.39
0.045
0.054
L2
1.27
1.77
0.050
0.069
L4
2.70
3.10
0.106
0.122
V2
0°
8°
0°
8°
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
0.456
B
1.5
C
12.8
D
20.2
G
24.4
N
100
F
11.4
11.6
0.449
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
50
T
0.25
0.35
W
23.7
24.3
MAX.
12.992
0.059
13.2
0.504
0.520
0795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
K0
R
MIN.
330
T
TAPE MECHANICAL DATA
inch
MAX.
1.574
0.0098 0.0137
0.933
0.956
* on sales type
11/13
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Table 10: Revision History
Date
Revision
10-Nov-2004
28-Feb-2005
1
2
12/13
Description of Changes
First release
Some values changed in table 6
STGP10NB60S - STGP10NB60SFP - STGB10NB60S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
13/13