STMICROELECTRONICS STGF3NC120HD

STGF3NC120HD
N-CHANNEL 3A - 1200V TO-220FP
FAST PowerMESH™ IGBT with Integral Damper Diode
Table 1: General Features
Figure 1: Package
TYPE
VCES
VCE(sat) (Max)
@25°C
IC
@100°C
STGF3NC120HD
1200 V
< 2.8 V
3A
■
■
■
■
LOW ON-VOLTAGE DROP (Vcesat)
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
HIGH SPEED
3
DESCRIPTION
This PowerMESH™ IGBT is designed using the
latest high voltage technology based on a patented strip layout. A new lifetime control allows good
switching performance and low voltage drop. This
IGBT featuring a co-packaged diode is optimized
for horizontal deflection applications in small and
medium sets.
1
2
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HORIZONTAL DEFLECTION
■ HOME APPLIANCE
■ LIGHTING
Table 2: Order Code
PART NUMBER
MARKING
PACKAGE
PACKAGING
STGF3NC120HD
GF3NC120HD
TO-220FP
TUBE
Rev. 2
January 2005
1/11
STGF3NC120HD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
Unit
1200
V
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC = 25°C
6
A
IC
Collector Current (continuous) at TC = 100°C
3
A
Collector Current (pulsed)
10
A
ICM ()
PTOT
Total Dissipation at TC = 25°C
25
W
Derating Factor
0.20
W/°C
VISO
Insulation withstand voltage AC (t=1sec, Tc=25°C)
2500
V
Tstg
Storage Temperature
–55 to 150
°C
Tj
Operating Junction Temperature range
() Pulse width limited by safe operating area
Table 4: Thermal Data
Min.
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
TL
Maximum Lead Temperature for Soldering Purpose (1.6 mm
from case, for 10 sec.)
Typ.
Max.
5.0
°C/W
62.5
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC = 1 mA, VGE = 0
ICES
Collector cut-off Current
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250 µA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tc= 125°C
2/11
Test Conditions
Min.
Typ.
Max.
1200
Unit
V
2
2.3
2.2
50
1
µA
mA
±100
nA
5
V
2.8
V
V
STGF3NC120HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Forward Transconductance
VCE = 25 V , IC = 3 A
Cies
Input Capacitance
VCE = 25 V, f= 1 MHz, VGE = 0
Coes
Output Capacitance
Cres
Reverse Transfer
Capacitance
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 960 V, IC = 3 A,
VGE = 15 V
(see Figure 22)
ICL
Turn-off SOA minimum
current
Vclamp = 960 V , Tj = 150°C
RG = 10 Ω, VGE = 15 V
Min.
Typ.
Max.
Unit
4
S
470
pF
45
pF
6
pF
24
3
10
32
10
nC
nC
nC
A
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 20)
15
3.5
880
ns
ns
A/µs
td(on)
tr
(di/dt)on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
VCC = 480 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 20)
14.5
4
770
ns
ns
A/µs
Table 8: Switching Off
Symbol
Parameter
tr(Voff)
Off Voltage Rise Time
td(off)
Turn-off Delay Time
tf
tr(Voff)
td(off)
tf
Current Fall Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
Test Conditions
Min.
Vcc = 800 V, IC = 3 A,
RG = 10 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 20)
Vcc = 800 V, IC = 3 A,
RG = 10 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 20)
Typ.
Max.
Unit
72
ns
118
ns
250
ns
132
ns
210
ns
470
ns
Table 9: Switching Energy
Symbol
Parameterr
Test Conditions
Min.
Typ.
Max
Unit
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 21)
236
290
526
µJ
µJ
µJ
Eon (2)
Eoff (3)
Ets
Turn-on Switching Losses
Turn-off Switching Loss
Total Switching Loss
VCC = 800 V, IC = 3 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 21)
360
620
980
µJ
µJ
µJ
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current.
3/11
STGF3NC120HD
Table 10: Collector-Emitter Diode
Symbol
4/11
Parameterr
Test Conditions
Min.
Typ.
Max
Unit
3
12
A
A
2.0
V
V
If
Ifm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
If = 1.5 A
If = 1.5A, Tj = 125°C
1.6
1.3
trr
Qrr
Irm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A, VR = 40 V
Tj = 25°C, di/dt = 100 A/µs
(see Figure 23)
51
85
3.3
ns
nC
A
trr
Qrr
Irm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A, VR = 40 V
Tj = 125°C, di/dt = 100 A/µs
(see Figure 23)
64
133
4.2
ns
nC
A
STGF3NC120HD
Figure 3: Output Characteristics
Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Normalized Gate Threshold vs Temperature
5/11
STGF3NC120HD
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Switching Losses vs Temperature
Figure 11: Switching Losses vs Gate Resistance
Figure 14: Switching Losses vs Collector Current
6/11
STGF3NC120HD
Figure 15: Thermal Impedance
Figure 18: Power Losses
Figure 16: Collector-Emitter Diode Characteristics
Figure 19: Power Losses
Figure 17: Turn-Off SOA
7/11
STGF3NC120HD
Figure 20: Test Circuit for Inductive Load
Switching
Figure 22: Gate Charge Test Circuit
Figure 21: Switching Waveforms
Figure 23: Diode Recovery Time Waveforms
8/11
STGF3NC120HD
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
inch
MAX.
MIN.
A
4.4
TYP
4.6
0.173
TYP.
0.181
MAX.
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
1.126
1.204
L2
16
0.630
L3
28.6
30.6
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
9/11
STGF3NC120HD
Table 11: Revision History
Date
Revision
13-Dec-2004
21-Jan-2005
1
2
10/11
Description of Changes
First release
Modified Curve 17
STGF3NC120HD
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