STMICROELECTRONICS STGP12NB60HD

STGP12NB60HD
N-CHANNEL 12A - 600V TO-220
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGP12NB60HD
600 V
< 2.8 V
12 A
■
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE
LOW ON-VOLTAGE DROP (Vcesat)
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
CO-PACKAGED WITH TURBOSWITCHT
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH FREQUENCY MOTOR CONTROLS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ UPS
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
Parameter
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC = 25°C
24
A
IC
Collector Current (continuous) at TC = 100°C
12
A
Collector Current (pulsed)
96
A
Total Dissipation at TC = 25°C
100
W
ICM ()
PTOT
Derating Factor
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
0.8
W/°C
–65 to 150
°C
150
°C
() Pulse width limited by safe operating area
July 2003
1/9
STGP12NB60HD
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
1.25
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
IGES
Gate-Emitter Leakage
Current (VCE = 0)
Min.
Typ.
Max.
600
Unit
V
10
µA
VCE = Max Rating, TC = 125 °C
100
µA
VGE = ± 20V , VCE = 0
±100
nA
Typ.
Max.
Unit
5
V
2.8
V
ON (1)
Symbol
Parameter
Test Conditions
Min.
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250 µA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 12 A
2.0
VGE = 15V, IC = 12 A, Tj =125°C
1.7
3
V
DYNAMIC
Symbol
Parameter
gfs
Forward Transconductance
Cies
Input Capacitance
Coes
Test Conditions
Min.
VCE = 15 V , IC = 12 A
Typ.
Max.
Unit
10
S
920
pF
Output Capacitance
120
pF
Cres
Reverse Transfer
Capacitance
27
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC = 12 A,
VGE = 15V
68
10
30
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V , Tj = 150°C
RG = 10 Ω
VCE = 25V, f = 1 MHz, VGE = 0
48
A
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Eon
2/9
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Rise Time
VCC = 480 V, IC = 12 A
RG = 10Ω , VGE = 15 V
5
46
ns
ns
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 12 A
RG=10Ω, VGE = 15 V,
Tj =125°C
800
290
A/µs
µJ
STGP12NB60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol
tc
Parameter
Cross-over Time
Test Conditions
Min.
Vcc = 480 V, IC = 12A,
RGE = 10 Ω , VGE = 15 V
Typ.
Max.
Unit
150
ns
27
ns
tr(Voff)
Off Voltage Rise Time
td(off)
Delay Time
76
ns
Fall Time
92
ns
Turn-off Switching Loss
0.21
mJ
Total Switching Loss
0.49
mJ
230
ns
76
ns
95
ns
tf
Eoff(**)
Ets
tc
Cross-over Time
tr(Voff)
Off Voltage Rise Time
td(off)
Delay Time
tf
Eoff(**)
Ets
Vcc = 480 V, IC = 12 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
Fall Time
200
ns
Turn-off Switching Loss
0.45
mJ
Total Switching Loss
0.74
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Ifm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
If = 6 A
If = 6 A, Tj = 125 °C
1.3
1.1
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 6 A ,VR = 50 V,
Tj = 125°C, di/dt = 100 A/µs
80
240
5.5
If
trr
Qrr
Irrm
Max.
Unit
12
48
A
A
1.9
V
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Thermal Impedance
3/9
STGP12NB60HD
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collettor Current
Gate Threshold vs Temperature
4/9
STGP12NB60HD
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/9
STGP12NB60HD
Switching Off Safe Operating Area
6/9
Diode Forward Voltage
STGP12NB60HD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/9
STGP12NB60HD
TO-220 MECHANICAL DATA
DIM.
8/9
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
L30
28.90
0.645
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STGP12NB60HD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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