STGF20NB60S N-CHANNEL 13A - 600V TO-220FP PowerMESH™ IGBT Figure 1: Package Table 1: General Features TYPE STGF20NB60S VCES VCE(sat) (Max) @25°C IC @100°C 600 V < 1.7 V 13 A LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency to applications (<1kHz). 3 1 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS LIGHT DIMMER STATIC RELAYS MOTOR CONTROL Table 2: Order Code PART NUMBER MARKING PACKAGE PACKAGING STGF20NB60S GF20NB60S TO-220FP TUBE Rev. 3 August 2005 1/11 STGF20NB60S Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C (#) 24 A IC Collector Current (continuous) at TC = 100°C (#) 13 A Collector Current (pulsed) 70 A ICM () PTOT Total Dissipation at TC = 25°C 40 W Derating Factor 0.32 W/°C VISO Insulation withstand voltage AC (t=1sec, Tc=25°C) 2500 V Tstg Storage Temperature –55 to 150 °C Tj Operating Junction Temperature range () Pulse width limited by safe operating area Table 4: Thermal Data Min. Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) Typ. Max. 3.15 °C/W 62.5 °C/W 300 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol Parameter Test Conditions VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off Current (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C 10 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ±100 nA VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA 5 V VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 20 A, Tj= 25°C VGE = 15V, IC = 20A, Tj=150°C 1.7 V V (#) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C C ESAT ( MAX ) C C 2/11 Min. Typ. Max. 600 Unit V 2.5 1.25 1.2 STGF20NB60S ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Parameter Test Conditions Forward Transconductance VCE = 10 V , IC = 8 A Cies Input Capacitance VCE = 25 V, f= 1 MHz, VGE = 0 Coes Min. Typ. Max. Unit 20 S 1820 pF Output Capacitance 167 pF Cres Reverse Transfer Capacitance 27 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 480 V, IC = 20 A, VGE = 15 V (see Figure 19) ICL Turn-off SOA minimum current Vclamp = 480 V , Tj = 125°C RG = 100 Ω 83 10 27 115 80 nC nC nC A (1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5% Table 7: Switching On Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Current Slope VCC = 480 V, IC = 20 A RG= 100 Ω, VGE= 15V (see Figure 17) 92 70 340 ns ns A/µs td(on) tr (di/dt)on Turn-on Delay Time Current Rise Time Turn-on Delay Time VCC = 480 V, IC = 20 A RG= 100 Ω, VGE= 15V, Tj= 125°C (see Figure 17) 80 73 320 ns ns A/µs Table 8: Switching Off Symbol tc Parameter Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Turn-off Delay Time tf Current Fall Time tc Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Turn-off Delay Time tf Test Conditions Min. Vcc = 480 V, IC = 20 A, RG = 100 Ω , VGE = 15 V TJ = 25 °C (see Figure 17) Vcc = 480 V, IC = 20 A, RG = 100 Ω , VGE = 15 V Tj = 125 °C (see Figure 17) Current Fall Time Typ. Max. Unit 1.6 µs 0.78 µs 1.1 µs 0.79 µs 2.4 µs 1.1 µs 2.4 µs 1.2 µs Table 9: Switching Energy Symbol Parameterr Test Conditions Min. Typ. Max Unit Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 480 V, IC = 20 A RG= 100 Ω, VGE= 15V, (see Figure 18) 0.84 7.4 8.24 mJ mJ mJ Eon (2) Eoff (3) Ets Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss VCC = 480 V, IC = 20 A RG= 100 Ω, VGE=15V,Tj=125°C (see Figure 18) 0.86 11.5 12.4 mJ mJ mJ (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. (3) Turn-off losses include also the tail of the collector current. 3/11 STGF20NB60S Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Normalized Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Gate Threshold vs Temperature 4/11 STGF20NB60S Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage Figure 10: Capacitance Variations Figure 13: Switching Losses vs Gate Charge Figure 11: Switching Losses vs Temperature Figure 14: Switching Losses vs Collector Current 5/11 STGF20NB60S Figure 15: Thermal Impedance 6/11 Figure 16: Collector-Emitter Diode Characteristics STGF20NB60S Figure 17: Test Circuit for Inductive Load Switching Figure 19: Gate Charge Test Circuit Figure 18: Switching Waveforms 7/11 STGF20NB60S In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STGF20NB60S TO-220FP MECHANICAL DATA mm. DIM. MIN. inch MAX. MIN. A 4.4 TYP 4.6 0.173 TYP. 0.181 MAX. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 1.126 1.204 L2 16 0.630 L3 28.6 30.6 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/11 STGF20NB60S Table 10: Revision History Date Revision 17-Dec-2004 05-Aug-2005 2 3 10/11 Description of Changes New template, no content change Some values changed in table 6 STGF20NB60S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 11/11