STGW35NC120HD 35 A - 1200 V - very fast IGBT Features ■ Low on-losses ■ Low on-voltage drop (VCE(sat)) ■ High current capability ■ High input impedance (voltage driven) ■ Low gate charge ■ Ideal for soft switching application 2 3 1 TO-247 Application ■ Induction heating Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STGW35NC120HD GW35NC120HD TO-247 Tube January 2008 Rev 1 1/13 www.st.com 13 Contents STGW35NC120HD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 9 STGW35NC120HD 1 Electrical ratings Electrical ratings Table 2. Symbol Parameter Value Unit 1200 V VCES Collector-emitter voltage (VGE = 0) IC (1) Collector current (continuous) at 25 °C 58 A IC (1) Collector current (continuous) at 100 °C 34 A ICL (2) Turn-off latching current 135 A ICP (3) Pulsed collector current 135 A VGE Gate-emitter voltage ±25 V PTOT Total dissipation at TC = 25 °C 220 W Diode RMS forward current at TC = 25 °C 30 A Surge non repetitive forward current tp = 10 ms sinusoidal 100 A –55 to 150 °C IF IFSM Tj Tstg 1. Absolute maximum ratings Operating junction temperature Storage temperature Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Min. Typ. Max. Unit Thermal resistance junction-case IGBT 0.562 °C/W Thermal resistance junction-case diode 1.5 °C/W Thermal resistance junction-ambient 50 °C/W 3/13 Electrical characteristics 2 STGW35NC120HD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Static Parameter Collector-emitter VBR(CES) breakdown voltage (VGE = 0) VCE(SAT) VGE(th) Test conditions IC = 1 mA Min. Typ. Max. Unit 1200 Collector-emitter saturation VGE= 15 V, IC= 20 A, voltage VGE= 15 V, IC= 20 A, TC=125 °C V 2.75 V V 5.75 V VCE =1200 V, TC=125 °C 500 10 µA mA ± 100 nA Gate threshold voltage VCE= VGE, IC= 250µA ICES Collector-emitter leakage current (VGE = 0) VCE =1200 V IGES Gate-emitter leakage current (VCE = 0) VGE =± 20 V gfs (1) Forward transconductance VCE = 25 V, IC= 20 A 2.2 2.0 3.75 14 S 1. Pulse duration = 300 µs, duty cycle 1.5% Table 5. Symbol Cies Coes Cres Qg Qge Qgc 4/13 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE=0 VCE = 960 V, IC= 20 A,VGE=15 V Min. Typ. Max. Unit 2510 175 30 110 16 49 pF pF pF 120 nC nC nC STGW35NC120HD Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Table 7. Symbol Eon (1) Eoff (2) Ets Eon (1) Eoff (2) Ets 1. Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A Turn-on delay time Current rise time Turn-on current slope VCC = 960 V, IC = 20 A Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A Off voltage rise time Turn-off delay time Current fall time VCC = 960 V, IC = 20 A Min. RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, TC=125 °C (see Figure 17) RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, TC=125 °C (see Figure 17) Typ. Max. Unit 29 11 1820 ns ns A/µs 27 14 1580 ns ns A/µs 90 275 312 ns ns ns 150 336 592 ns ns ns Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A Turn-on switching losses Turn-off switching losses Total switching losses VCC = 960 V, IC = 20 A Min. RG= 10 Ω, VGE= 15 V, (see Figure 17) RG= 10 Ω, VGE= 15 V, TC=125 °C (see Figure 17) Typ. Max. Unit 1660 4438 6098 µJ µJ µJ 3015 6900 9915 µJ µJ µJ Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C) 2. Turn-off losses include also the tail of the collector current Table 8. Symbol Collector-emitter diode Parameter VF Forward on-voltage trr Reverse recovery time Reverse recovery charge Reverse recovery current Qrr Irrm Test conditions IF = 20 A IF = 20 A, TC = 125 °C IF = 20 A, VR = 27 V, TC=125 °C, di/dt = 100 A/µs (see Figure 20) Min. Typ. Max. Unit 1.9 1.7 2.5 V V 152 722 9 ns nC A 5/13 Electrical characteristics 2.1 6/13 STGW35NC120HD Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs. temperature Figure 6. Gate charge vs. gate-source voltage Figure 7. Capacitance variations STGW35NC120HD Figure 8. Electrical characteristics Normalized gate threshold voltage vs. temperature Figure 9. Collector-emitter on voltage vs. collector current Figure 10. Normalized breakdown voltage vs. temperature Figure 11. Switching losses vs. temperature Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current 7/13 Electrical characteristics STGW35NC120HD Figure 14. Thermal Impedance Figure 15. Turn-off SOA Figure 16. Forward voltage drop vs. forward current IFM(A) 100 90 Tj=150˚C (typical values) 80 70 60 50 Tj=25˚C (maximum values) 40 Tj=150˚C (maximum values) 30 20 10 VFM(V) 0 0.0 8/13 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 STGW35NC120HD 3 Test circuit Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveform Figure 20. Diode recovery time waveform 9/13 Package mechanical data 4 STGW35NC120HD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/13 STGW35NC120HD Package mechanical data TO-247 MECHANICAL DATA DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Diam MIN. 4.90 2.35 0.6 1.2 mm. TYP MAX. 5.16 2.45 0.76 1.33 MIN. 0.193 0.093 0.024 0.047 3 2 1.9 3.04 2.13 3.2 0.075 0.120 16.03 21.09 4.45 19.18 20.31 41.40 6.30 3 0.621 0.820 0.155 0.737 0.789 1.609 0.238 3.66 0.140 0.084 0.126 0.429 0.078 5° 60° 5° 60° 3.56 MAX. 0.203 0.096 0.030 0.052 0.118 0.078 10.90 15.77 20.83 3.93 18.72 20.04 40.88 6.04 2 inch TYP. 0.631 0.830 0.175 0.755 0.800 1.630 0.248 0.118 0.144 11/13 Revision history 5 STGW35NC120HD Revision history Table 9. 12/13 Document revision history Date Revision 25-Jan-2008 1 Changes First issue. STGW35NC120HD Please Read Carefully: Information in this document is provided solely in connection with ST products. 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