STMICROELECTRONICS STGW35NC120HD

STGW35NC120HD
35 A - 1200 V - very fast IGBT
Features
■
Low on-losses
■
Low on-voltage drop (VCE(sat))
■
High current capability
■
High input impedance (voltage driven)
■
Low gate charge
■
Ideal for soft switching application
2
3
1
TO-247
Application
■
Induction heating
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STGW35NC120HD
GW35NC120HD
TO-247
Tube
January 2008
Rev 1
1/13
www.st.com
13
Contents
STGW35NC120HD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
................................................ 9
STGW35NC120HD
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Parameter
Value
Unit
1200
V
VCES
Collector-emitter voltage (VGE = 0)
IC (1)
Collector current (continuous) at 25 °C
58
A
IC (1)
Collector current (continuous) at 100 °C
34
A
ICL (2)
Turn-off latching current
135
A
ICP (3)
Pulsed collector current
135
A
VGE
Gate-emitter voltage
±25
V
PTOT
Total dissipation at TC = 25 °C
220
W
Diode RMS forward current at TC = 25 °C
30
A
Surge non repetitive forward current tp = 10 ms
sinusoidal
100
A
–55 to 150
°C
IF
IFSM
Tj
Tstg
1.
Absolute maximum ratings
Operating junction temperature
Storage temperature
Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = ----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
2. Vclamp = 80% of VCES, Tj =150 °C, RG=10 Ω, VGE=15 V
3. Pulse width limited by max. junction temperature allowed
Table 3.
Symbol
Rthj-case
Rthj-amb
Thermal resistance
Parameter
Min.
Typ.
Max.
Unit
Thermal resistance junction-case IGBT
0.562
°C/W
Thermal resistance junction-case diode
1.5
°C/W
Thermal resistance junction-ambient
50
°C/W
3/13
Electrical characteristics
2
STGW35NC120HD
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Collector-emitter
VBR(CES) breakdown voltage
(VGE = 0)
VCE(SAT)
VGE(th)
Test conditions
IC = 1 mA
Min.
Typ. Max. Unit
1200
Collector-emitter saturation VGE= 15 V, IC= 20 A,
voltage
VGE= 15 V, IC= 20 A, TC=125 °C
V
2.75
V
V
5.75
V
VCE =1200 V, TC=125 °C
500
10
µA
mA
±
100
nA
Gate threshold voltage
VCE= VGE, IC= 250µA
ICES
Collector-emitter leakage
current (VGE = 0)
VCE =1200 V
IGES
Gate-emitter leakage
current (VCE = 0)
VGE =± 20 V
gfs (1)
Forward transconductance
VCE = 25 V, IC= 20 A
2.2
2.0
3.75
14
S
1. Pulse duration = 300 µs, duty cycle 1.5%
Table 5.
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
4/13
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz, VGE=0
VCE = 960 V,
IC= 20 A,VGE=15 V
Min. Typ. Max. Unit
2510
175
30
110
16
49
pF
pF
pF
120
nC
nC
nC
STGW35NC120HD
Table 6.
Symbol
td(on)
tr
(di/dt)on
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Table 7.
Symbol
Eon (1)
Eoff
(2)
Ets
Eon (1)
Eoff
(2)
Ets
1.
Electrical characteristics
Switching on/off (inductive load)
Parameter
Test conditions
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 960 V, IC = 20 A
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 960 V, IC = 20 A
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 960 V, IC = 20 A
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 960 V, IC = 20 A
Min.
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
RG= 10 Ω, VGE= 15 V,
TC=125 °C (see Figure 17)
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
RG= 10 Ω, VGE= 15 V,
TC=125 °C (see Figure 17)
Typ.
Max.
Unit
29
11
1820
ns
ns
A/µs
27
14
1580
ns
ns
A/µs
90
275
312
ns
ns
ns
150
336
592
ns
ns
ns
Switching energy (inductive load)
Parameter
Test conditions
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960 V, IC = 20 A
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 960 V, IC = 20 A
Min.
RG= 10 Ω, VGE= 15 V,
(see Figure 17)
RG= 10 Ω, VGE= 15 V,
TC=125 °C (see Figure 17)
Typ.
Max.
Unit
1660
4438
6098
µJ
µJ
µJ
3015
6900
9915
µJ
µJ
µJ
Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
Collector-emitter diode
Parameter
VF
Forward on-voltage
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Qrr
Irrm
Test conditions
IF = 20 A
IF = 20 A, TC = 125 °C
IF = 20 A, VR = 27 V,
TC=125 °C, di/dt = 100 A/µs
(see Figure 20)
Min.
Typ.
Max.
Unit
1.9
1.7
2.5
V
V
152
722
9
ns
nC
A
5/13
Electrical characteristics
2.1
6/13
STGW35NC120HD
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage
vs. temperature
Figure 6.
Gate charge vs. gate-source
voltage
Figure 7.
Capacitance variations
STGW35NC120HD
Figure 8.
Electrical characteristics
Normalized gate threshold
voltage vs. temperature
Figure 9.
Collector-emitter on voltage
vs. collector current
Figure 10. Normalized breakdown
voltage vs. temperature
Figure 11. Switching losses vs.
temperature
Figure 12. Switching losses vs. gate
resistance
Figure 13. Switching losses vs. collector
current
7/13
Electrical characteristics
STGW35NC120HD
Figure 14. Thermal Impedance
Figure 15. Turn-off SOA
Figure 16. Forward voltage drop vs.
forward current
IFM(A)
100
90
Tj=150˚C
(typical values)
80
70
60
50
Tj=25˚C
(maximum values)
40
Tj=150˚C
(maximum values)
30
20
10
VFM(V)
0
0.0
8/13
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
STGW35NC120HD
3
Test circuit
Test circuit
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
Figure 19. Switching waveform
Figure 20. Diode recovery time waveform
9/13
Package mechanical data
4
STGW35NC120HD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STGW35NC120HD
Package mechanical data
TO-247 MECHANICAL DATA
DIM.
A
D
E
F
F1
F2
F3
F4
G
H
L
L1
L2
L3
L4
L5
M
V
V2
Diam
MIN.
4.90
2.35
0.6
1.2
mm.
TYP
MAX.
5.16
2.45
0.76
1.33
MIN.
0.193
0.093
0.024
0.047
3
2
1.9
3.04
2.13
3.2
0.075
0.120
16.03
21.09
4.45
19.18
20.31
41.40
6.30
3
0.621
0.820
0.155
0.737
0.789
1.609
0.238
3.66
0.140
0.084
0.126
0.429
0.078
5°
60°
5°
60°
3.56
MAX.
0.203
0.096
0.030
0.052
0.118
0.078
10.90
15.77
20.83
3.93
18.72
20.04
40.88
6.04
2
inch
TYP.
0.631
0.830
0.175
0.755
0.800
1.630
0.248
0.118
0.144
11/13
Revision history
5
STGW35NC120HD
Revision history
Table 9.
12/13
Document revision history
Date
Revision
25-Jan-2008
1
Changes
First issue.
STGW35NC120HD
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