STGP19NC60S N-channel 600V - 20A - TO-220 Medium frequency PowerMESH™ IGBT Features Type VCES STGP19NC60S 600V VCE(sat) (typ)@150°C IC @100°C < 1.35V 20A ■ Very low on-voltage drop (VCE(sat)) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling diode. ■ Minimum power losses at 5 kHz in hard switching ■ Optimized performance for medium operating frequencies. 2 TO-220 Figure 1. Application ■ 3 1 Internal schematic diagram Medium frequency motor control Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code Marking Package Packaging STGP19NC60S GP19NC60S TO-220 Tube September 2007 Rev 3 1/14 www.st.com Contents STGP19NC60S Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/14 ................................................ 9 STGP19NC60S 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit VCES Collector-emitter voltage (VGS = 0) 600 V IC(1) Collector current (continuous) at TC = 25°C 50 A IC(1) Collector current (continuous) at TC = 100°C 20 A Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25°C 125 W – 55 to 150 °C Value Unit 1 °C/W 62.5 °C/W ICP (2) Tj Operating junction temperature 1. Calculated according to the iterative formula: T –T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------C C R × V (T , I ) THJ – C CESAT ( MAX ) C C 2. Pulsed: width limited by max junction temperature allowed Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max IGBT Rthj -amb Thermal resistance junction-ambient max 3/14 Electrical characteristics 2 STGP19NC60S Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol Parameter VBR(CES) Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation VGE= 15V, IC= 12A voltage VGE= 15V, IC=12A,Tc=150°C VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C IGES gfs Table 4. Symbol 4/14 Static Test conditions IC= 1mA, VGE= 0 Min. Typ. Max. 600 Unit V 1.55 1.35 1.9 V V 5.75 V VCE= Max rating,TC= 150°C 150 1 µA mA Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA Forward transconductance VCE = 15V, IC= 12A 3.75 10 S Dynamic Parameter Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 480V, IC = 12A, VGE = 15V, Figure 17 Min. Typ. Max. Unit 1190 135 28.5 pF pF pF 54.5 8.7 25.8 nC nC nC STGP19NC60S Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Table 6. Symbol Eon Eoff(1) Ets Eon Eoff(1) Ets Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Test conditions Min. VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Figure 18 VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Tj = 125°C Typ. Max. Unit 17.5 6.2 1870 ns ns A/µs 17 6.5 1700 ns ns A/µs 90 175 215 ns ns ns 155 245 290 ns ns ns Figure 18 Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Figure 18 VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Tj = 125°C Figure 18 Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Figure 16 VCC = 480V, IC = 12A RG= 10Ω, VGE= 15V, Tj = 125°C Min. Typ. Max. Unit 135 815 995 µJ µJ µJ 200 1175 1375 µJ µJ µJ Figure 16 1. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGP19NC60S 2.1 Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. Transfer characteristics Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs temperature Figure 5. Gate charge vs gate-source voltage Figure 6. 6/14 Capacitance variations STGP19NC60S Electrical characteristics Figure 7. Normalized gate threshold voltage vs temperature Figure 8. Collector-emitter on voltage vs collector current Figure 9. Normalized breakdown voltage vs temperature Figure 10. Switching losses vs temperature Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector current 7/14 Electrical characteristics Figure 13. Turn-off SOA Figure 15. IC vs. frequency 8/14 STGP19NC60S Figure 14. Thermal impedance STGP19NC60S 2.2 Electrical characteristics Frequency applications For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) ● The maximum power dissipation is limited by maximum junction to case thermal resistance: Equation 1 PD = ∆T / RTHJ-C considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C ● The conduction losses are: Equation 2 PC = IC * VCE(SAT) * δ with 50% of duty cycle, VCESAT typical value @125°C. ● Power dissipation during ON & OFF commutations is due to the switching frequency: Equation 3 PSW = (EON + EOFF) * freq. Typical values @ 125°C for switching losses are used (test conditions: VCE = 480V, VGE=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see Note 1), while the tail of the collector current is included in the EOFF measurements. 9/14 Test circuit 3 STGP19NC60S Test circuit Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/14 STGP19NC60S 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGP19NC60S TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 12/14 Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STGP19NC60S 5 Revision history Revision history Table 7. Document revision history Date Revision Changes 02-Jul-2007 1 First release 13-Aug-2007 2 From target to preliminary version 18-Sep-2007 3 Added new section: Electrical characteristics (curves) 13/14 STGP19NC60S Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14