STN951 Low voltage fast-switching PNP power transistor Preliminary Data General features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package ■ 2 1 In compliance with the 2002/93/EC European Directive 2 3 SOT-223 Description The device is manufactured in PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Internal schematic diagram Applications ■ Emergency lighting ■ Voltage regulators ■ Relay drivers ■ High efficiency low voltage switching applications Order codes Part Number Marking Package Packing STN951 N951 SOT-223 Tape & reel November 2006 Rev 2 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/8 www.st.com 8 STN951 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2/8 STN951 1 Electrical ratings Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) -60 V VCEO Collector-emitter voltage (IB = 0) -60 V VEBO Emitter-base voltage (IC = 0) -6 V Collector current -5 A Collector peak current (tP < 5ms) -10 A Base current -1 A IBM Base peak current (tP < 5ms) -2 A Ptot Total dissipation at T amb = 25°C 1.6 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 78 °C/W IC ICM IB Tj Table 2. Symbol Max. operating junction temperature Thermal data Parameter Rthj-amb(1) Thermal resistance junction-amb __max (1) Device mounted on PCB area of 1cm2 3/8 Electrical characteristics 2 STN951 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test Conditions Typ. Max. Unit ICBO Collector cut-off current (IE =0) VCB = -60V -0.1 µA IEBO Emitter cut-off current (IC =0) VEB = -5V -0.1 µA Collector-base V(BR)CBO (2) Breakdown voltage (IE =0) IC = -100µA -60 V Collector-emitter V(BR)CEO (2) Breakdown voltage (IB =0) IC = -10mA -60 V Collector-base V(BR)EBO (2) Breakdown voltage (IC =0) IE = -100µA -6 V VCE(sat) (2) Collector-emitter saturation voltage IC = -100mA IB = -5mA IB = -50mA IC = -1A -10 -50 mV -70 -120 mV mV IC = -2A IB = -50mA -140 -250 IC = -5A IB = -200mA -350 -500 mV -1 -1.15 V -0.89 -1 V VBE(sat) (2) Base-emitter saturation voltage IC = -4A IB = -200mA VBE(on) (2) Base-emitter on voltage IC = -4A VCE = -1V IC = -10mA VCE = -1V 150 300 hFE (2) fT CCBO ton ts tf IC = -2A V CE = -1V 150 270 IC = -5A V CE = -1V 65 90 IC = -10A V CE = -1V 10 25 Transition frequency VCE = -10V IC = -100mA 130 MHz Collector-base capacitance VCB = -10V f = 1MHz 60 pF IC = -1A VCC = -30V 80 ns 600 ns 70 ns DC current gain Resistive load Turn-on time Storage time Fall time IB1 = - IB2 = -0.1A Note (2) Pulsed duration = 300 µs, duty cycle ≤1.5% 4/8 Min. 350 STN951 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data STN951 SOT-223 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. 1.80 MAX. 0.071 B 0.60 0.70 0.80 0.024 0.027 0.031 B1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 D 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 E 3.30 3.50 3.70 0.130 0.138 0.146 H 6.70 7.00 7.30 0.264 0.276 0.287 V A1 10 o 10o 0.02 P008B 6/8 STN951 4 Revision history Revision history Table 4. Revision history Date Revision Changes 03-Oct-2006 1 Initial release. 30-Nov-2006 2 The emitter base voltage value has been modified 7/8 STN951 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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