STP08IE120F4 Emitter Switched Bipolar Transistor ESBT® 1200 V - 8 A - 0.10 Ω Preliminary Data General features VCS(ON) IC RCS(ON) 0.8 V 8A 0.10 W ■ High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz ■ Squared RBSOA up to 1200V ■ Very low Ciss driven by RG = 47Ω ■ Very low turn-off cross over time TO220FP-4L Internal schematic diagrams Applications ■ Aux SMPS for three phase mains Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. Order codes Part Number Marking Package Packing STP08IE120F4 P08IE120F4 TO220FP-4L Tube November 2006 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 STP08IE120F4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STP08IE120F4 1 Electrical ratings Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit 1200 V VCS(SS) Collector-source voltage (V BS = VGS = 0 V) VBS(OS) Base-source voltage (IC = 0, V GS = 0 V) 30 V VSB(OS) Source-base voltage (IC = 0, V GS = 0 V) 17 V ± 17 V Collector current 8 A Collector peak current (tP < 5ms) 24 A Base current 6 A IBM Base peak current (tP < 5ms) 12 A Ptot Total dissipation at T c = 25°C 21 W Tstg Storage temperature -40 to 150 °C 150 °C Value Unit 6 °C/W VGS IC ICM IB TJ Table 2. Symbol Rthj-case Gate-source voltage Max. operating junction temperature Thermal data Parameter Thermal resistance junction-case __max 3/11 Electrical characteristics 2 STP08IE120F4 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Symbol Parameter ICS(SS) Collector-source current (VBS = V GS = 0) VCE = 1200V 100 µA IBS(OS) Base-source current (IC = 0, VGS = 0) VBS(OS) = 30V 10 µA ISB(OS) Source-base current (IC = 0, VGS = 0) VSB(OS) = 17V 100 µA IGS(OS) Gate-source leakage VGS = ± 17V 100 nA VCS(ON) Collector-source ON voltage VGS = 10V _IC = 8A IB = 1.6A VGS = 10V_ IC = 4A IB = 0.4A 1 1.2 V V VGS = 10V_ IC = 8A VCS = 1V VGS = 10V_ IC = 4A_ VCS = 1V hFE DC current gain VBS(ON) Base Source ON voltage VGS(th) Gate threshold voltage CISS QGS(tot) ts tf ts tf VCSW VCS(dyn) VCS(dyn) 4/11 Electrical characteristics Input capacitance Test Conditions VGS = 10V_ IC = 8A 2 VGS = 0 INDUCTIVE LOAD Storage time Fall time VClamp = 960V IC = 4A IB = 0.8A VGS = 10V RG = 47Ω tp = 4µs IC = 4A IB = 0.4A VGS = 10V VClamp = 960V RG = 47Ω tp = 4µs RG = 47Ω hFE = 5A IC = 8A Collector-source dynamic voltage (500ns) VCC = VClamp = 400V V GS = 10V RG = 47Ω IC = 4A IB = 0.8A Collector-source dynamic voltage VCC = VClamp = 400V V GS = 10V RG = 47Ω IC = 4A IB = 0.8A (1 µs) 1.5 1.5 VCS = 25V ______f = 1MHz VGS = 10V Maximum collectorsource voltage switched without snubber 5 7 IB = 1.6A VBS = VGS ______IB = 250µA IBpeak = 4A IBpeak = 4A Typ. Max. Unit 0.8 0.5 VGS = 10V_ IC = 4A_ IB = 0.4A Gate-source charge INDUCTIVE LOAD Storage time Fall time Min. 3 V V 4 V 550 pF 26 nC 670 ns 15 ns 340 ns 10.2 ns 1200 V 5.75 V 3.35 V tpeak = 500ns tpeak = 500ns STP08IE120F4 2.1 Electrical characteristics Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. DC current gain Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage Figure 5. Base-source On voltage Figure 6. Base-source On voltage 5/11 Electrical characteristics Figure 7. Reverse biased safe operting Figure 8. area Figure 9. Dynamic collector-emitter saturation voltage Figure 11. Inductive load switching time 6/11 STP08IE120F4 Gate threshold voltage vs temperature Figure 10. Inductive load switching time STP08IE120F4 2.2 Electrical characteristics Test circuits Figure 12. Inductive load switching and RBSOA test circuit 7/11 Package mechanical data 3 STP08IE120F4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STP08IE120F4 Package mechanical data TO220FP-4L MECHANICAL DATA DIM. A A1 A2 b b1 b2 b3 b4 c D E e e1 H1 L L1 L2 Dia P Q MIN. 4.30 2.60 1.30 0.50 1.05 mm. TYP 1.50 MAX. 4.70 3 1.70 0.70 1.3 1.25 0.45 15.50 9.80 2.29 0.50 2.54 7.62 6.30 1.50 0.60 15.90 10.20 2.79 6.70 13.60 3.30 15.40 3 3.30 15.80 3.40 3.50 7514291B 9/11 Revision history 4 STP08IE120F4 Revision history Table 4. 10/11 Revision history Date Revision 28-Nov-2006 1 Changes Initial release. STP08IE120F4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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