STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS(on) ID Pw STP10NK80Z 800V <0.90Ω 9A 160 W STW10NK80Z 800V <0.90Ω 9A 160 w STP10NK80ZFP 800V <0.90Ω 9A 40 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeability 3 1 3 2 1 TO-220 2 TO-220FP TO-247 Description Internal schematic diagram The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Applications ■ Switching application Order codes Part number Marking Package Packaging STP10NK80Z P10NK80Z TO-220 Tube STP10NK80ZFP P10NK80ZFP TO-220FP Tube STW10NK80Z W10NK80Z TO-247 Tube July 2006 Rev 6 1/15 www.st.com 15 Contents STP10NK80ZFP - STP10NK80Z - STW10NK80Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 9 STP10NK80ZFP - STP10NK80Z - STW10NK80Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220/ TO-247 VDS VDGR VGS TO-220FP Drain-source voltage (VGS = 0) 800 V Drain-gate voltage (RGS = 20KΩ) 800 V Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 9 9(1) A ID Drain current (continuous) at TC=100°C 6 6(1) A IDM(2) Drain current (pulsed) 36 36(1) A PTOT Total dissipation at TC = 25°C 160 40 W Derating Factor 1.28 0.32 W/°C Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ) dv/dt (3) VISO TJ Tstg Peak diode recovery voltage slope Insulation withstand voltage (DC) 4 KV 4.5 V/ns -- Operating junction temperature Storage temperature 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤9A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX Table 2. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP Rthj-case Thermal resistance junction-case Max Rthj-a Thermal resistance junction-ambient Max Tl Maximum lead temperature for soldering purpose Table 3. Symbol 0.78 TO-247 3.1 62.5 300 0.78 °C/W 50 °C/W °C Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) Value Unit 9 A 290 mJ 3/15 Electrical characteristics 2 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test condictions ID = 1mA, VGS= 0 Min. Typ. Max. 800 Unit V VDS = Max rating, VDS = Max rating @125°C 1 50 µA µA Gate body leakage current (VDS = 0) VGS = ±20V ±10 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 100µA 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 4.5A 0.78 0.9 Ω IDSS Zero gate voltage drain current (VGS = 0) IGSS Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Qg Qgd Test condictions Forward transconductance VDS =15V, ID = 4.5A Input capacitance Output capacitance Reverse transfer capacitance Coss eq(2). Equivalent output capacitance Qgs 3 Total gate charge Gate-source charge Gate-drain charge Min. Typ. Max. Unit 9.6 S VDS =25V, f=1 MHz, VGS=0 2180 205 38 pF pF pF VGS=0, VDS =0V to 640V 105 pF VDD=640V, ID = 9A 72 12.5 37 nC nC nC VGS =10V (see Figure 19) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS inceases from 0 to 80% VDSS 4/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol Electrical characteristics Switching times Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test condictions Min. VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V (see Figure 20) VDD=400 V, ID=4.5A, RG=4.7Ω, VGS=10V (see Figure 20) Typ. Max. Unit 30 20 ns ns 65 17 ns ns Gate-source zener diode Parameter BVGSO(1) Gate-Source Breakdown Voltage Test condictions Igs=±1mA (Open Drain) Min. Typ. Max. Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Table 8. Symbol Source drain diode Max Unit Source-drain current 9 A ISDM(1) Source-drain current (pulsed) 36 A VSD(2) Forward on voltage ISD=9A, VGS=0 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=9A, ISD trr Qrr IRRM Parameter Test condictions di/dt = 100A/µs, VDD=45V, Tj=150°C Min Typ. 645 6.4 20 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/15 Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 6/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Electrical characteristics Figure 7. Output characterisics Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/15 Electrical characteristics STP10NK80ZFP - STP10NK80Z - STW10NK80Z Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics Figure 16. Normalized BVDSS vs temperature Figure 17. Maximum avalanche energy vs temperature 8/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/15 Package mechanical data 4 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/15 Package mechanical data STP10NK80ZFP - STP10NK80Z - STW10NK80Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 12/15 L5 1 2 3 L4 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 13/15 Revision history 5 STP10NK80ZFP - STP10NK80Z - STW10NK80Z Revision history Table 9. 14/15 Document revision history Date Revision Changes 08-Sep-2005 4 Complete document 10-Mar-2006 5 Inserted ecopack indication 28-Sep-2005 6 New template, no content change STP10NK80ZFP - STP10NK80Z - STW10NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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