STMICROELECTRONICS STP10NK80Z_06

STP10NK80ZFP
STP10NK80Z - STW10NK80Z
N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247
Zener-protected superMESHTM MOSFET
General features
Type
VDSS
RDS(on)
ID
Pw
STP10NK80Z
800V
<0.90Ω
9A
160 W
STW10NK80Z
800V
<0.90Ω
9A
160 w
STP10NK80ZFP
800V
<0.90Ω
9A
40 W
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeability
3
1
3
2
1
TO-220
2
TO-220FP
TO-247
Description
Internal schematic diagram
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STP10NK80Z
P10NK80Z
TO-220
Tube
STP10NK80ZFP
P10NK80ZFP
TO-220FP
Tube
STW10NK80Z
W10NK80Z
TO-247
Tube
July 2006
Rev 6
1/15
www.st.com
15
Contents
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
................................................ 9
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/ TO-247
VDS
VDGR
VGS
TO-220FP
Drain-source voltage (VGS = 0)
800
V
Drain-gate voltage (RGS = 20KΩ)
800
V
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
9
9(1)
A
ID
Drain current (continuous) at TC=100°C
6
6(1)
A
IDM(2)
Drain current (pulsed)
36
36(1)
A
PTOT
Total dissipation at TC = 25°C
160
40
W
Derating Factor
1.28
0.32
W/°C
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt
(3)
VISO
TJ
Tstg
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
4
KV
4.5
V/ns
--
Operating junction temperature
Storage temperature
2500
-55 to 150
V
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤9A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2.
Thermal data
Value
Symbol
Parameter
Unit
TO-220 TO-220FP
Rthj-case
Thermal resistance junction-case Max
Rthj-a
Thermal resistance junction-ambient Max
Tl
Maximum lead temperature for soldering
purpose
Table 3.
Symbol
0.78
TO-247
3.1
62.5
300
0.78
°C/W
50
°C/W
°C
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
9
A
290
mJ
3/15
Electrical characteristics
2
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On/off states
Parameter
Drain-source breakdown
voltage
Test condictions
ID = 1mA, VGS= 0
Min.
Typ.
Max.
800
Unit
V
VDS = Max rating,
VDS = Max rating @125°C
1
50
µA
µA
Gate body leakage current
(VDS = 0)
VGS = ±20V
±10
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 100µA
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 4.5A
0.78
0.9
Ω
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Table 5.
Symbol
gfs (1)
Ciss
Coss
Crss
Dynamic
Parameter
Qg
Qgd
Test condictions
Forward transconductance
VDS =15V, ID = 4.5A
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss eq(2). Equivalent output
capacitance
Qgs
3
Total gate charge
Gate-source charge
Gate-drain charge
Min.
Typ.
Max.
Unit
9.6
S
VDS =25V, f=1 MHz, VGS=0
2180
205
38
pF
pF
pF
VGS=0, VDS =0V to 640V
105
pF
VDD=640V, ID = 9A
72
12.5
37
nC
nC
nC
VGS =10V
(see Figure 19)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
4/15
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Symbol
Electrical characteristics
Switching times
Parameter
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test condictions
Min.
VDD=400 V, ID=4.5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=400 V, ID=4.5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Typ.
Max.
Unit
30
20
ns
ns
65
17
ns
ns
Gate-source zener diode
Parameter
BVGSO(1) Gate-Source Breakdown
Voltage
Test condictions
Igs=±1mA
(Open Drain)
Min.
Typ.
Max.
Unit
30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Table 8.
Symbol
Source drain diode
Max
Unit
Source-drain current
9
A
ISDM(1)
Source-drain current (pulsed)
36
A
VSD(2)
Forward on voltage
ISD=9A, VGS=0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=9A,
ISD
trr
Qrr
IRRM
Parameter
Test condictions
di/dt = 100A/µs,
VDD=45V, Tj=150°C
Min
Typ.
645
6.4
20
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/15
Electrical characteristics
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220
Figure 2.
Thermal impedance for TO-220
Figure 3.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Safe operating area for TO-247
Figure 6.
Thermal impedance for TO-247
6/15
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Electrical characteristics
Figure 7.
Output characterisics
Figure 8.
Transfer characteristics
Figure 9.
Transconductance
Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
7/15
Electrical characteristics
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Figure 13. Normalized gate threshold voltage
vs temperature
Figure 14. Normalized on resistance vs
temperature
Figure 15. Source-drain diode forward
characteristics
Figure 16. Normalized BVDSS vs temperature
Figure 17. Maximum avalanche energy vs
temperature
8/15
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
3
Test circuit
Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
Figure 21. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/15
Package mechanical data
4
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/15
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/15
Package mechanical data
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
12/15
L5
1 2 3
L4
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Package mechanical data
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
0.620
0.214
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
5.50
0.216
13/15
Revision history
5
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
Revision history
Table 9.
14/15
Document revision history
Date
Revision
Changes
08-Sep-2005
4
Complete document
10-Mar-2006
5
Inserted ecopack indication
28-Sep-2005
6
New template, no content change
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
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