STP8NK85Z STF8NK85Z N-channel 850V - 1.1Ω - 6.7A - TO-220 /TO-220FP Zener - protected SuperMESH™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP8NK85Z 850 V < 1.4 Ω 6.7 A STF8NK85Z 850 V < 1.4 Ω 6.7 A ■ Extremely high dv/dt capability ■ 100% avalange tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatibility 3 1 TO-220 2 TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STP8NK85Z P8NK85Z TO-220 Tube STF8NK85Z F8NK85Z TO-220FP Tube October 2006 Rev 5 1/15 www.st.com 15 Contents STP8NK85Z - STF8NK85Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 2 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STP8NK85Z - STF8NK85Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 850 VGS Gate- source voltage ± 30 ID Drain current (continuous) at TC = 25°C Unit V V 6.7 6.7 (1) A (1) A Drain current (continuous) at TC = 100°C 4.3 4.3 IDM (2) Drain current (pulsed) 26.7 26.7 (1) A PTOT Total dissipation at TC = 25°C 150 35 W Derating factor 1.20 0.28 W/°C ID VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25°C) Tj Tstg Max operating junction temperature Storage temperature 4000 V 4.5 V/ns - 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤6.7 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Symbol Thermal data Parameter Value Unit TO-220 TO-220FP 0.83 3.6 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Symbol °C/W Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 6.7 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 350 mJ 3/15 Electrical ratings Table 4. Symbol BVGSO 1.1 STP8NK85Z - STF8NK85Z Gate-source zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1mA (Open Drain) Min. Typ. 30 Max. Unit V Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/15 STP8NK85Z - STF8NK85Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID =1MA, VGS = 0 Zero Gate voltage Drain current (VGS = 0) IGSS Gate-body leakage Current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 3.35 A Symbol gfs (1) Ciss Coss Crss Typ. Max. Unit 850 V VDS = Max Rating IDSS Table 6. Min. 1 50 µA µA ± 10 µA 3.75 4.5 V 1.1 1.4 Ω Typ. Max. VDS = Max Rating, TC = 125°C 3 Dynamic Parameter Forward transconductance Test conditions VDS = 15v, ID = 3.35 A Input capacitance VDS = 25 V, f = 1 MHz, Output capacitance V =0 Reverse transfer capacitance GS Min. Unit 6 S 1870 190 44 pF pF pF Coss eq. (2) Equivalent output capacitance VDS =0V, VDS = 0V to 680V 75 pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 425 V, ID = 3.35 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) 26 19 58 18 ns ns ns ns tr(Voff) tr tc Off-voltage rise time Fall time Cross-over time VDD = 680 V, ID = 6.7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 20) 12 10 24 ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 680 V, ID = 6.7 A, VGS = 10 V (see Figure 19) 60 12 35 84 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 5/15 Electrical characteristics Table 7. Symbol ISD STP8NK85Z - STF8NK85Z Source drain diode Parameter ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Reverse recovery time Reverse Recovery Charge Reverse Recovery Current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions 6/15 Typ. ISD = 6.7 A, VGS = 0 ISD = 6.7 A, di/dt = 100 A/µs VDD = 35 V, Tj = 25°C (see Figure 20) ISD = 6.7 A, di/dt = 100 A/µs VDD = 35 V, Tj = 150°C (see Figure 20) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Pulse width limited by safe operating area Min. Max. Unit 6.7 26.7 A A 1.6 V 530 4.5 17 ns µC A 690 6.4 17 ns µC A STP8NK85Z - STF8NK85Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 7/15 Electrical characteristics STP8NK85Z - STF8NK85Z Figure 7. Transconductancez Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature 8/15 Figure 8. Static drain-source on resistance Figure 12. Normalized BVDSS vs Temperature STP8NK85Z - STF8NK85Z Figure 13. Normalized on resistance vs temperature Electrical characteristics Figure 14. Source-drain diode forward characteristic Figure 15. Avalanche energy vs temperature 9/15 Test circuit 3 STP8NK85Z - STF8NK85Z Test circuit Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 10/15 STP8NK85Z - STF8NK85Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/15 Package mechanical data STP8NK85Z - STF8NK85Z TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 12/15 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP8NK85Z - STF8NK85Z Package mechanical data TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 13/15 Revision history 5 STP8NK85Z - STF8NK85Z Revision history Table 8. 14/15 Revision history Date Revision Changes 02-Mar-2005 1 First release 16-May-2005 2 Modified value in table 7 08-Sep-2005 3 Final datasheet 09-Feb-2006 4 ECOPACK label 20-Sep-2006 5 New template, no content change STP8NK85Z - STF8NK85Z Please Read Carefully: Information in this document is provided solely in connection with ST products. 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