STPS20120C Power Schottky rectifier Main product characteristics IF(AV) 2 x 10 A VRRM 120 V A1 Tj(max) 175° C A2 VF(typ) 0.54 V K A1 TO-220FPAB STPS20120CFP Feature and benefits ■ High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ K A1 Good trade-off between leakage current and forward voltage drop Description Dual center tap Schottky rectifier suited for high frequency switch mode power supply. IF(AV) IFSM PARM Tstg Tj 1. dPtot --------------dTj A2 K A1 A2 TO-220AB I2PAK STPS20120CT STPS20120CR Part Number Marking STPS20120CT STPS20120CT STPS20120CR STPS20120CR STPS20120CFP STPS20120CFP Absolute ratings (limiting values, per diode) Symbol VRRM IF(RMS) K Order code Packaged in TO-220AB, I2PAK and TO-220FPAB, this device is intended to be used in notebook and LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode. Table 1. A2 K Parameter Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 TO-220AB, I2PAK TO-220FPAB Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature(1) Tc = 150° C Per diode Tc = 145° C Per device Tc = 125° C Per diode Tc = 100° C Per device tp = 10 ms Sinusoidal tp = 1 µs Tj = 25° C Value Unit 120 30 10 20 10 20 150 4600 -65 to + 175 175 V A A A W °C °C 1 - condition to avoid thermal runaway for a diode on its own heatsink < ------------------------Rth ( j – a ) May 2007 Rev 2 1/9 www.st.com 9 Characteristics 1 STPS20120C Characteristics Table 2. Thermal parameters Symbol Rth(j-c) Parameter Value I2PAK / TO-220AB Per diode Total 3 1.8 TO-220FPAB Per diode Total 5.5 4.5 Junction to case I2PAK / TO-220AB Rth(c) Unit Coupling ° C/W 0.6 Total TO-220FPAB 3.5 When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 3. Static electrical characteristics (per diode) Symbol IR(1) Test conditions Reverse leakage current Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C VF(2) Forward voltage drop Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C Min. VR = VRRM Typ. 1.5 Unit 10 µA 5 mA 0.7 IF = 2.5 A 0.54 0.58 0.92 IF = 10 A V 0.7 0.74 1.02 IF = 20 A 0.81 1. Pulse test : tp = 5 ms, δ < 2% 2. Pulse test : tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.62 x IF(AV) + 0.012 IF2(RMS) 2/9 Max. 0.86 STPS20120C Figure 1. Characteristics Average forward power dissipation Figure 2. versus average forward current (per diode) PF(AV)(W) Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) 10 11 9 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Rth(j-a)=Rth(j-c) 10 9 8 δ=1 7 TO-220FPAB 8 Rth(j-a)=15°C/W 7 6 TO-220AB I²PAK 6 5 5 4 4 3 3 T 2 T 2 1 IF(AV)(A) δ=tp/T 0 0 1 2 3 Figure 3. 4 5 6 7 8 9 10 11 1 tp δ=tp/T 0 12 0 13 Normalized avalanche power derating versus pulse duration 25 50 Figure 4. PARM(tp) PARM(1µs) Tamb(°C) tp 75 100 125 150 175 Normalized avalanche power derating versus junction temperature PARM(tp) PARM(25°C) 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 Tj(°C) tp(µs) 0.001 0 0.01 0.1 Figure 5. 1 10 100 1000 Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB / I2PAK) 25 50 Figure 6. 75 100 125 150 Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220FPAB) IM(A) IM(A) 100 140 120 80 100 60 80 Tc=25°C Tc=25°C 60 Tc=75°C Tc=75°C 40 40 Tc=125°C Tc=125°C IM 20 IM t t t(s) δ=0.5 t(s) δ=0.5 0 1.E-03 20 0 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 3/9 Characteristics Figure 7. STPS20120C Relative variation of thermal Figure 8. impedance junction to case versus pulse duration (TO-220AB & I2PAK) Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB) Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 T T 0.2 0.2 Single pulse Single pulse 0.1 δ=tp/T tp(s) 0.1 tp 0.0 tp(s) δ=tp/T tp 0.0 1.E-03 1.E-02 Figure 9. 1.E-01 1.E+00 Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) IR(mA) C(pF) 1.E+01 1000 F=1MHz VOSC=30mVRMS Tj=25°C Tj=150°C 1.E+00 Tj=125°C 1.E-01 Tj=100°C Tj=75°C 1.E-02 100 Tj=50°C 1.E-03 Tj=25°C 1.E-04 VR(V) VR(V) 10 1.E-05 0 10 20 30 40 50 60 70 80 90 100 110 120 Figure 11. Forward voltage drop versus forward current (per diode) IFM(A) 100 Tj=125°C (maximum values) Tj=25°C (maximum values) Tj=125°C (typical values) 10 VFM(V) 1 0.0 4/9 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 STPS20120C 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.8 Nm ● Maximum torque value: 1.0 Nm Table 4. TO-220AB dimensions Dimensions Ref. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 M G1 Millimeters 16.4 typ. 0.645 typ. E G L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam. 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 5/9 Package information STPS20120C I2PAK dimensions Table 5. Dimensions Ref. c2 L2 D L1 A1 Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.028 0.037 b1 1.14 1.70 0.044 0.067 b2 1.14 1.70 0.044 0.067 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 b2 e 2.40 2.70 0.094 0.106 b1 E 10.0 10.4 0.394 0.409 L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055 L b e 6/9 Inches Min. A E Millimeters c STPS20120C Package information Table 6. TO-220FPAB dimensions Dimensions Ref. A B H Dia L6 L2 L7 L3 L5 F1 L4 F G Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 D F2 G1 Millimeters L2 E 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 7/9 Ordering information 3 4 8/9 STPS20120C Ordering information Ordering type Marking Package Weight Base qty Delivery mode STPS20120CT STPS20120CT TO-220AB 2.23 g 50 Tube 2 STPS20120CR STPS20120CR I PAK 1.49 g 50 Tube STPS20120CFP STPS20120CFP TO-220FPAB 2.0 g 50 Tube Revision history Date Revision Description of Changes 18-Feb-2005 1 First issue 03-May-2007 2 Reformatted to current standards. Added TO-220FPAB package. STPS20120C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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