STMICROELECTRONICS STW14NM50FD

STB12NM50FD - STB12NM50FD-1
STP12NM50FD/FP - STW14NM50FD
N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247
FDmesh™ Power MOSFET (with fast diode)
General features
Type
VDSS
RDS(on)
ID
Pw
STB12NM50FD
500V
<0.4Ω
12A
160W
STB12NM50FD-1
500V
<0.4Ω
12A
160W
STP12NM50FD
500V
<0.4Ω
12A
160W
STP12NM50FDFP
500V
<0.4Ω
12A
35W
STW14NM50FD
500V
<0.4Ω
12A
160W
■
100% avalanche tested
■
High dv/dt and avalanche capabilities
■
Low input capacitance and gate charge
■
Low gate input resistance
■
Tight process control and high manufacturing
yields
3
1
3
2
1
TO-220
2
TO-220FP
3
1
D²PAK
D²PAK
3
12
TO-247
I²PAK
Internal schematic diagram
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STB12NM50FD
B12NM50FD
D²PAK
Tape & reel
STB12NM50FD-1
B12NM50FD
I²PAK
Tube
STP12NM50FD
P12NM50FD
TO-220
Tube
STP12NM50FDFP
P12NM50FDFP
TO-220FP
Tube
STW14NM50FD
W14NM50FD
TO-247
Tube
May 2006
Rev 3
1/18
www.st.com
18
Contents
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/
TO-220FP
D²/I²PAK
VDS
VDGR
VGS
TO-247
Drain-source voltage (VGS = 0)
500
V
Drain-gate voltage (RGS = 20KΩ)
500
V
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
12
12(1)
14
A
ID
Drain current (continuous) at TC=100°C
7.5
7.5(1)
8.8
A
Drain current (pulsed)
48
48 (1)
56
A
Total dissipation at TC = 25°C
160
35
160
W
Derating factor
1.28
0.28
1.4
W/°C
IDM
(2)
PTOT
dv/dt(3)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (DC)
TJ
Tstg
20
--
V/ns
2500
Operating junction temperature
Storage temperature
--
-65 to 150
V
°C
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤12A, di/dt ≤400A/µs, VDD =80%V(BR)DSS
Table 2.
Thermal resistance
Value
Symbol
Parameter
TO-220
I²PAK
Rthj-case Thermal resistance junction-case Max
Rthj-a
Thermal resistance junction-ambient Max
Tl
Maximum lead temperature for soldering
purpose
Table 3.
Symbol
Unit
D²PAK TO-220FP TO-247
0.78
62.5
3.57
100
0.77
62.5
300
°C/W
°C/W
°C
Avalanche data
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
6
A
400
mJ
3/18
Electrical characteristics
2
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On/off states
Parameter
Drain-source breakdown
voltage
Test condictions
ID = 1mA, VGS= 0
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±30V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 6A
Symbol
gfs (1)
Ciss
Coss
Crss
Qg
500
3
Unit
V
1
10
µA
µA
±100
nA
4
5
V
0.32
0.4
Ω
Typ.
Max.
Unit
VDS = Max rating @125°C
Parameter
Test condictions
Forward transconductance
VDS =15V, ID = 6A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz,
VGS=0
Qgd
RG
Gate input resistance
VDD=400V, ID = 3A
VGS =10V
(see Figure 11)
f=1 MHz Gate DC Bias= 0
test signal level = 20mV
open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/18
Max.
Dynamic
Total gate charge
Gate-source charge
Gate-drain charge
Qgs
Typ.
VDS = Max rating,
IDSS
Table 5.
Min.
Min.
9.8
S
1000
390
20
pF
pF
pF
12
3
7
nC
nC
nC
2
Ω
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Table 6.
Symbol
td(on)
tr
tr(Voff)
tf
tc
Table 7.
Symbol
Electrical characteristics
Switching times
Parameter
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Test Condictions
Min.
VDD=250 V, ID= 6A,
RG=4.7Ω, VGS=10V
(see Figure 17)
VDD=400 V, ID= 12A,
RG=4.7Ω, VGS=10V
(see Figure 17)
Typ.
Max. Unit
19
10
ns
ns
39
18
29
ns
ns
ns
Source drain diode
Max
Unit
Source-drain current
12
A
ISDM(1)
Source-drain current (pulsed)
48
A
VSD(2)
Forward on voltage
ISD=12A, VGS=0
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A, Tj=25°C
ISD
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test condictions
di/dt = 100A/µs,
VDD=30V, (see Figure 22)
ISD=12A, Tj=150°C
di/dt = 100A/µs,
VDD=30V, (see Figure 22)
Min
Typ.
140
800
11
ns
nC
A
252
1890
15
ns
nC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/18
Electrical characteristics
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220/
D²PAK/I²PAK
Figure 2.
Thermal impedance for TO-220/
D²PAK/I²PAK
Figure 3.
Safe operating areafor TO-220FP
Figure 4.
Thermal impedance for TO-220FP
Figure 5.
Safe operating area for TO-247
Figure 6.
Thermal impedance for TO-247
6/18
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Electrical characteristics
Figure 7.
Output characterisics
Figure 8.
Transfer characteristics
Figure 9.
Transconductance
Figure 10. Static drain-source on resistance
Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
7/18
Electrical characteristics
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Figure 13. Normalized gate threshold voltage
vs temperature
Figure 14. Normalized on resistance vs
temperature
Figure 15. Source-drain diode forward
characteristics
Figure 16. Normalized BVDSS vs temperature
8/18
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
3
Test circuit
Test circuit
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
9/18
Package mechanical data
4
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
10/18
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/18
Package mechanical data
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/18
TYP
5.50
0.216
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
MIN.
4.4
TYP
4.6
0.173
TYP.
0.181
MAX.
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
10.4
0.393
4.88
5.28
0.192
0.208
D1
E
8
10
E1
G
0.315
8.5
0.334
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0º
0.015
4º
3
V2
0.4
1
13/18
Package mechanical data
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
14/18
L5
1 2 3
L4
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Package mechanical data
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
4.40
MIN.
TYP
4.60
0.173
TYP.
MAX.
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
0.181
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
15/18
Packaging mechanical data
5
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
16/18
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
6
Revision history
Revision history
Table 8.
Revision history
Date
Revision
03-May-2006
3
Changes
New template
17/18
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
18/18