TDA7560 4 X 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD 1 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Features Figure 1. Package SUPERIOR OUTPUT POWER CAPABILITY: 4 x 50W/4Ω MAX. 4 x 45W/4Ω EIAJ 4 x 30W/4Ω @ 14.4V, 1KHz, 10% 4 x 80W/2Ω MAX. 4 x 77W/2Ω EIAJ 4 x 55W/2Ω @ 14.4V, 1KHz, 10% MULTIPOWER BCD TECHNOLOGY MOSFET OUTPUT POWER STAGE EXCELLENT 2Ω DRIVING CAPABILITY HI-FI CLASS DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION LOW EXTERNAL COMPONENT COUNT: – INTERNALLY FIXED GAIN (26dB) – NO EXTERNAL COMPENSATION – NO BOOTSTRAP CAPACITORS ON BOARD 0.35A HIGH SIDE DRIVER FLEXIWATT25 Table 1. Order Codes ■ ■ ■ ■ ■ 2 Part Number Package TDA7560 FLEXIWATT25 OUTPUT DC OFFSET DETECTION LOAD DUMP VOLTAGE FORTUITOUS OPEN GND REVERSED BATTERY ESD Description The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio. The fully complementary PChannel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances. 1.1 Protections: OUTPUT SHORT CIRCUIT TO GND, TO VS, ACROSS THE LOAD ■ VERY INDUCTIVE LOADS ■ OVERRATING CHIP TEMPERATURE WITH SOFT THERMAL LIMITER ■ Figure 2. Block Diagram Vcc1 Vcc2 470µF 100nF ST-BY MUTE HSD HSD/VOFFDET OUT1+ IN1 OUT10.1µF PW-GND OUT2+ IN2 OUT2PW-GND 0.1µF OUT3+ IN3 OUT30.1µF PW-GND OUT4+ IN4 OUT4PW-GND 0.1µF AC-GND 0.47µF SVR TAB S-GND 47µF D94AU158C February 2005 Rev. 2 1/11 TDA7560 Figure 3. Pin Connection (Top view) HSD P-GND4 MUTE OUT4- VCC OUT4+ OUT3- OUT3+ P-GND3 IN3 AC-GND IN4 IN2 S-GND IN1 SVR OUT1+ P-GND1 VCC OUT1- ST-BY OUT2+ OUT2- TAB 25 P-GND2 1 D94AU159A Table 2. Absolute Maximum Ratings Symbol Value Unit Operating Supply Voltage 18 V VCC (DC) DC Supply Voltage 28 V VCC (pk) Peak Supply Voltage (for t = 50ms) 50 V Output Peak Current Repetitive (Duty Cycle 10% at f = 10Hz) Non repetitive (t = 100µs) 9 10 A A Power Dissipation Tcase = 70°C 80 W Tj Junction Temperature 150 °C Tstg Storage Temperature -55 to 150 °C Value Unit 1 °C/W VCC IO Ptot Parameter THERMAL DATA Symbol Rth j-case 2/11 Parameter Thermal Resistance Junction to case Max. TDA7560 Table 3. Electrical Characteristcs (Refer to the test and application diagram, VS = 13.2V; RL = 4Ω; Rg = 600Ω; f = 1KHz; Tamb = 25°C; unless otherwise specified). Symbol Parameter Test Condition Quiescent Current RL = ∞ VOS Output Offset Voltage Play Mode dVOS During mute ON/OFF output offset voltage Iq1 Gv dGv Po Voltage Gain Min. Typ. Max. Unit 120 200 320 mA ±60 mV ±60 mV 27 dB ±1 dB 25 26 VS = 13.2V; THD = 10% VS = 13.2V; THD = 1% VS = 14.4V; THD = 10% VS = 14.4V; THD = 1% 23 16 28 20 25 19 30 23 W W W W VS = 13.2V; THD = 10%, 2Ω VS = 13.2V; THD = 1%, 2Ω VS = 14.4V; THD = 10%, 2Ω VS = 14.4V; THD = 1%, 2Ω 42 32 50 40 45 34 55 43 W W W W 41 72 45 77 W W 50 80 W W Channel Gain Unbalance Output Power Po EIAJ EIAJ Output Power (*) VS = 13.7V; RL = 4Ω VS = 13.7V; RL = 2Ω Po max. Max. Output Power (*) VS = 14.4V; RL = 4Ω VS = 14.4V; RL = 2Ω THD Distortion Po = 4W Po = 15W; RL = 2Ω eNo Output Noise "A" Weighted Bw = 20Hz to 20KHz SVR Supply Voltage Rejection f = 100Hz; Vr = 1Vrms 50 70 dB fch High Cut-Off Frequency PO = 0.5W 100 300 KHz 80 100 120 KΩ 60 70 60 - dB dB 0.006 0.015 0.05 0.07 % % 35 50 50 70 µV µV Ri Input Impedance CT Cross Talk f = 1KHz PO = 4W f = 10KHz PO = 4W ISB St-By Current Consumption VSt-By = 1.5V 20 µA Ipin5 St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA VSB out St-By Out Threshold Voltage (Amp: ON) VSB in St-By in Threshold Voltage (Amp: OFF) Mute Attenuation POref = 4W 80 3.5 AM VM out Mute Out Threshold Voltage (Amp: Play) VM in Mute In Threshold Voltage (Amp: Mute) VAM in VS Automute Threshold (Amp: Mute) Att ≥ 80dB; POref = 4W (Amp: Play) Att < 0.1dB; PO = 0.5W Ipin23 Muting Pin Current 3.5 V 1.5 90 V 1.5 6.5 VMUTE = 1.5V (Sourced Current) 7 VMUTE = 3.5V -5 V dB 7 V V 7.5 8 V 12 18 µA 18 µA HSD SECTION Vdropout Iprot Dropout Voltage Current Limits IO = 0.35A; VS = 9 to 16V 0.25 400 0.6 V 800 mA 3/11 TDA7560 Table 3. Electrical Characteristcs (continued) (Refer to the test and application diagram, VS = 13.2V; RL = 4Ω; Rg = 600Ω; f = 1KHz; Tamb = 25°C; unless otherwise specified). Symbol Parameter Test Condition Min. Typ. Max. Unit OFFSET DETECTOR (Pin 26) VM_ON Mute Voltage for DC offset detection enabled Vstby = 5V VOFF Detected Differential Output Offset Vstby = 5V; Vmute = 8V ±2 V25_T Pin 25 Voltage for Detection = TRUE Vstby = 5V; Vmute = 8V VOFF > ±4V 0 V25_F Pin 25 Voltage for Detection = FALSE Vstby = 5V; Vmute = 8V VOFF > ±2V 12 VM_OFF 8 V ±3 6 V ±4 V 1.5 V V (*) Saturated square wave output. Figure 4. Standard Test and Application Circuit C8 0.1µF C7 2200µF Vcc1-2 Vcc3-4 6 R1 20 4 ST-BY 10K R2 9 C9 1µF 8 22 MUTE 47K C10 1µF 5 C1 3 0.1µF 12 IN2 17 C2 0.1µF 19 15 C3 0.1µF 21 14 IN4 S-GND 23 13 C5 0.47µF OUT4 24 16 4/11 OUT3 18 IN3 C4 0.1µF OUT2 2 11 IN1 OUT1 7 10 SVR C6 47µF 25 HSD 1 TAB D95AU335B TDA7560 Figure 5. P.C.B. and component layout of the Figure 4. Components & Top Copper Layer Bottom Copper Layer 5/11 TDA7560 Figure 6. Quiescent current vs. supply voltage. 240 Figure 9. Distortion vs. output Power THD (%) 10 Id (mA) Vi = 0 220 Vs= 14.4 V RL = 4 Ohm 1 RL = 4 Ohm 200 f = 10 KHz 0.1 180 140 8 10 12 Vs (V) 14 16 18 0.001 0.1 1 10 Po (W) Figure 7. Output power vs. supply voltage. 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 f = 1 KHz 0.01 160 Figure 10. Distortion vs. output power Po (W) 10 THD (%) Po-max Vs= 14.4 V 1 RL= 4 Ohm f= 1 KHz RL = 2 Ohm f = 10 KHz THD= 10 % 0.1 8 9 10 11 12 13 14 Vs (V) 15 16 17 18 Figure 8. Output power vs. supply voltage. 130 120 110 100 90 80 70 60 50 40 30 20 10 6/11 f = 1 KHz 0.01 THD= 1 % 0.001 0.1 1 10 Po (W) Figure 11. Distortion vs. frequency. Po (W) 10 THD (%) Po-max 1 RL= 2 Ohm f= 1 KHz Vs = 14.4 V RL = 4 Ohm Po = 4 W THD= 10 % 0.1 THD= 1 % 0.01 8 9 10 11 12 13 14 Vs (V) 15 16 17 18 0.001 10 100 f (Hz) 1000 10000 TDA7560 Figure 12. Distortion vs. frequency. Figure 15. Output attenuation vs. supply volt. OUT ATTN (dB) THD (%) 10 0 1 Vs = 14.4 V RL = 2 Ohm RL = 4 Ohm Po= 4 W ref. -20 Po = 8 W 0.1 -40 -60 0.01 -80 0.001 10 100 f (Hz) 1000 10000 -100 5 6 7 8 9 10 Vs (V) Figure 13. Crosstalk vs. frequency. Figure 16. Output noise vs. source resistance. En (uV) CROSSTALK (dB) 90 80 70 60 50 RL = 4 Ohm Po = 4 W Rg = 600 Ohm 40 30 20 10 100 f (Hz) 1000 10000 Figure 14. Supply voltage rejection vs. freq. 130 120 110 100 90 80 70 60 50 40 30 20 Vs= 14.4 V RL= 4 Ohm 22-22 KHz lin. "A" wgtd 1 10 100 1000 Rg (Ohm) 10000 100000 Figure 17. Power dissipation & efficiency vs. output power (sine-wave operation) SVR (dB) Ptot (W) n (%) 100 90 90 80 80 70 70 60 60 50 50 50 40 40 80 n Vs= 13.2 V 70 RL= 4 x 4 Ohm Rg= 600 Ohm 40 10 100 f (Hz) 1000 10000 60 f= 1 KHz SINE 30 Vripple= 1 Vrms 30 20 90 Ptot 30 20 20 10 10 0 0 2 4 6 0 8 10 12 14 16 18 20 22 24 26 28 30 Po (W) 7/11 TDA7560 Figure 18. Power dissipation vs. ouput power (Music/Speech Simulation) Ptot (W) 30 Vs= 13.2 V RL= 4 x 4 Ohm 25 GAUSSIAN NOISE CLIP START 20 15 10 5 0 3 1 2 3 Po (W) 4 5 6 Figure 19. Power dissipation vs. output power (Music/Speech Simulation) 60 55 50 45 40 35 30 25 20 15 10 5 Ptot (W) Vs= 13.2 V RL= 4 x 2 Ohm GAUSSIAN NOISE CLIP START 0 2 4 6 8 10 Po (W) DC Offset Detector The TDA7560 The TDA7560 integrates a DC offset detector to avoid that an anomalous DC offset on the inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on the outputs which may lead to speakers damage for overheating. The feature is enabled by the MUTE pin and works with the amplifier umuted and with no signal on the inputs. The DC offset detection is signaled out on the HSD pin. 4 Application Hints (ref. to the circuit of fig. 4) 4.1 SVR Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients.To conveniently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS 10µF. 4.2 INPUT STAGE The TDA7560's inputs are ground-compatible and can stand very high input signals (± 8Vpk) without any performances degradation. If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off will amount to 16 Hz. 4.3 STAND-BY AND MUTING STAND-BY and MUTING facilities are both CMOS-COMPATIBLE. In absence of true CMOS ports or microprocessors, a direct connection to Vs of these two pins is admissible but a 470 kOhm equivalent resistance should present between the power supply and the muting and stand-by pins. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms. 4.4 HEATSINK DEFINITION Under normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be deduced from fig. 18, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussian-distributed amplitude was employed for this simulation. Based on that, frequent clipping occurence (worst-case) will cause Pdiss = 26W. Assuming Tamb = 70°C and TCHIP = 150°C as boundary conditions, the heatsink's thermal resistance should be approximately 2°C/W. This would avoid any thermal shutdown occurence even after long-term and full-volume operation. 8/11 TDA7560 5 Package Information Figure 20. Flexiwatt25 (vertical) Mechanical Data & Package Dimensions DIM. A B C D E F (1) G G1 H (2) H1 H2 H3 L (2) L1 L2 (2) L3 L4 L5 M M1 N O R R1 R2 R3 R4 V V1 V2 V3 MIN. 4.45 1.80 0.75 0.37 0.80 23.75 28.90 22.07 18.57 15.50 7.70 3.70 3.60 mm TYP. 4.50 1.90 1.40 0.90 0.39 1.00 24.00 29.23 17.00 12.80 0.80 22.47 18.97 15.70 7.85 5 3.5 4.00 4.00 2.20 2 1.70 0.5 0.3 1.25 0.50 MAX. 4.65 2.00 MIN. 0.175 0.070 1.05 0.42 0.57 1.20 24.25 29.30 0.029 0.014 0.031 0.935 1.139 22.87 19.37 15.90 7.95 0.869 0.731 0.610 0.303 4.30 4.40 0.145 0.142 inch TYP. 0.177 0.074 0.055 0.035 0.015 0.040 0.945 1.150 0.669 0.503 0.031 0.884 0.747 0.618 0.309 0.197 0.138 0.157 0.157 0.086 0.079 0.067 0.02 0.12 0.049 0.019 MAX. 0.183 0.079 OUTLINE AND MECHANICAL DATA 0.041 0.016 0.022 0.047 0.955 1.153 0.904 0.762 0.626 0.313 0.169 0.173 Flexiwatt25 (vertical) 5˚ (T p.) 3˚ (Typ.) 20˚ (Typ.) 45˚ (Typ.) (1): dam-bar protusion not included (2): molding protusion included V C B V H H1 V3 A H2 O H3 R3 L4 R4 V1 R2 L2 N L3 R L L1 V1 V2 R2 D R1 L5 Pin 1 R1 R1 E G G1 F FLEX25ME M M1 7034862 9/11 TDA7560 6 Revision History Table 4. Revision History Date Revision December 2001 1 First Issue February 2005 2 Improved value from 75 to 20µA of the “ST_BY Current Consumption” parameter in the table 3 at the page 3. 10/11 Description of Changes TDA7560 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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