TDA7560 4 x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD PRODUCT PREVIEW SUPERIOR OUTPUT POWER CAPABILITY: 4 x 50W/4Ω MAX. 4 x 45W/4Ω EIAJ 4 x 30W/4Ω @ 14.4V, 1KHz, 10% 4 x 80W/2Ω MAX. 4 x 77W/2Ω EIAJ 4 x 55W/2Ω @ 14.4V, 1KHz, 10% EXCELLENT 2Ω DRIVING CAPABILITY HI-FI CLASS DISTORTION LOW OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DETECTION LOW EXTERNAL COMPONENT COUNT: – INTERNALLY FIXED GAIN (26dB) – NO EXTERNAL COMPENSATION – NO BOOTSTRAP CAPACITORS ON BOARD 0.35A HIGH SIDE DRIVER MULTIPOWER BCD TECHNOLOGY MOSFET OUTPUT POWER STAGE FLEXIWATT25 ORDERING NUMBER: TDA7560 FORTUITOUS OPEN GND REVERSED BATTERY ESD DESCRIPTION The TDA7560 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio The fully complementary P-Channel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances. PROTECTIONS: OUTPUT SHORT CIRCUIT TO GND, TO VS, ACROSS THE LOAD VERY INDUCTIVE LOADS OVERRATING CHIP TEMPERATURE WITH SOFT THERMAL LIMITER LOAD DUMP VOLTAGE BLOCK AND APPLICATION DIAGRAM Vcc1 Vcc2 470µF 100nF ST-BY MUTE HSD HSD OUT1+ IN1 OUT10.1µF PW-GND OUT2+ IN2 OUT20.1µF PW-GND OUT3+ IN3 OUT30.1µF PW-GND OUT4+ IN4 OUT40.1µF PW-GND AC-GND 0.47µF SVR TAB S-GND 47µF D94AU158B November 1999 This is preliminary information on a new product now in development. Details are subject to change without notice. 1/10 TDA7560 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Operating Supply Voltage 18 V VCC (DC) DC Supply Voltage 28 V VCC (pk) Peak Supply Voltage (t = 50ms) 50 V Output Peak Current: Repetitive (Duty Cycle 10% at f = 10Hz) Non Repetitive (t = 100µs) 9 10 A A VCC IO Ptot Parameter Power dissipation, (Tcase = 70°C) 80 W Tj Junction Temperature 150 °C Tstg Storage Temperature – 55 to 150 °C PIN CONNECTION (Top view) HSD P-GND4 MUTE OUT4- V CC OUT4+ OUT3- OUT3+ P-GND3 IN3 AC-GND IN4 IN2 S-GND IN1 SVR OUT1+ P-GND1 V CC OUT1- ST-BY OUT2+ OUT2- TAB 25 P-GND2 1 D94AU159A THERMAL DATA 2/10 Symbol Parameter Rth j-case Thermal Resistance Junction to Case Max. Value Unit 1 °C/W TDA7560 ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 600Ω; RL = 4Ω; Tamb = 25°C; Refer to the test and application diagram, unless otherwise specified.) Symbol Parameter Test Condition Iq1 Quiescent Current RL = ∞ VOS Output Offset Voltage Play Mode dVOS During mute ON/OFF output offset voltage Gv Voltage Gain dGv Channel Gain Unbalance Po Output Power Min. Typ. Max. 120 200 320 mA ±80 mV ±80 mV 27 dB ±1 dB 25 26 Unit VS = VS = VS = VS = 13.2V; 13.2V; 14.4V; 14.4V; THD = 10% THD = 1% THD = 10% THD = 1% 23 16 28 20 25 19 30 23 W W W W VS = VS = VS = VS = 13.2V; 13.2V; 14.4V; 14.4V; THD = 10%, 2Ω THD = 1%, 2Ω THD = 10%, 2Ω THD = 1%, 2Ω 42 32 50 40 45 34 55 43 W W W W 41 75 45 77 W W 50 80 W W Po EIAJ EIAJ Output Power (*) VS = 13.7V; R L = 4Ω VS = 13.7V; R L = 2Ω Po max. Max. Output Power (*) VS = 14.4V; R L = 4Ω VS = 14.4V; R L = 2Ω THD Distortion Po = 4W Po = 10W; RL = 2Ω eNo Output Noise ”A” Weighted Bw = 20Hz to 20KHz SVR Supply Voltage Rejection f = 100Hz; Vr = 1Vrms 50 70 fch High Cut-Off Frequency PO = 0.5W 100 300 Ri Input Impedance 80 100 120 KΩ CT Cross Talk 60 70 60 – – dB dB ISB St-By Current Consumption VSt-By = 1.5V 75 µA Ipin4 St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA VSB out St-By Out Threshold Voltage (Amp: ON) VSB in St-By in Threshold Voltage (Amp: OFF) Mute Attenuation POref = 4W 80 VM out Mute Out Threshold Voltage (Amp: Play) 3.5 VM in Mute In Threshold Voltage (Amp: Mute) VAM in VS Automute Threshold (Amp: Mute) Att ≥ 80dB; POref = 4W (Amp: Play) Att < 0.1dB; PO = 0.5W AM Ipin22 Muting Pin Current f = 1KHz PO = 4W f = 10KHz PO = 4W 0.006 0.015 0.05 0.07 % % 35 50 50 70 µV µV dB KHz 3.5 V 1.5 90 V 1.5 6.5 VMUTE = 1.5V (Sourced Current) 7 VMUTE = 3.5V -5 V dB 7 V V 7.5 8 V 12 18 µA 18 µA 0.6 V 800 mA HSD SECTION Vdropout Iprot Dropout Voltage Current Limits IO = 0.35A; VS = 9 to 16V 0.25 400 (*) Saturated square wave output. 3/10 TDA7560 Figure 1: Standard Test and Application Circuit C8 0.1µF C7 2200µF Vcc1-2 Vcc3-4 6 R1 ST-BY 20 4 10K R2 9 C9 1µF MUTE 7 22 47K C10 1µF 5 C1 IN1 3 0.1µF 12 17 C2 0.1µF 19 15 C3 0.1µF 21 IN4 14 S-GND 23 13 C5 0.47µF OUT4 24 16 4/10 OUT3 18 IN3 C4 0.1µF OUT2 2 11 IN2 OUT1 8 10 SVR C6 47µF 25 HSD 1 TAB D95AU335B TDA7560 Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale) COMPONENTS & TOP COPPER LAYER BOTTOM COPPER LAYER 5/10 TDA7560 Figure 3. Quiescent current vs. supply voltage. Figure 4. Output power vs. supply voltage. Id (mA) 240 Vi = 0 220 RL = 4 Ohm 200 180 160 140 8 10 12 Vs (V) 14 16 18 Figure 5. Output power vs. supply voltage. Po(W) 130 120 Po-max 110 100 RL=2 Ohm 90 THD=10% f=1 KHz 80 70 60 50 THD=1 % 40 30 20 10 8 9 10 11 12 13 14 15 16 17 18 Vs (V) Figure 7. Distortion vs. output power 10 THD(%) 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 Po (W) Po-max RL=4 Ohm f= 1 KHz THD=10 % THD=1 % 8 9 10 11 12 13 14 Vs (V) 15 16 17 18 Figure 6. Distortion vs. output Power THD(%) 10 Vs=14.4 V RL= 4 Ohm 1 f = 10 KHz 0.1 f = 1 KHz 0.01 0.001 0.1 1 10 Po (W) Figure 8. Distortion vs. frequency. 10 THD (%) Vs=14.4 V 1 1 RL= 2 Ohm f = 10 KHz 0.1 0.1 f = 1 KHz 0.01 0.001 0.1 6/10 Vs = 14.4 V RL =4 Ohm Po =4 W 1 Po (W) 0.01 10 0.001 10 100 f (Hz) 1000 10000 TDA7560 Figure 9. Distortion vs. frequency. Figure 10. Crosstalk vs. frequency. THD(%) 10 90 CROSSTALK(dB) 80 1 Vs =14.4 V RL= 2 Ohm 70 Po= 8 W 60 0.1 50 RL= 4 Ohm Po= 4 W Rg= 600 Ohm 40 0.01 30 0.001 10 100 f (Hz) 1000 10000 Figure 11. Supply voltage rejection vs. frequency. SVR(dB) 100 90 20 10 f (Hz) 1000 10000 Figure 12. Output attenuation vs. supply voltage. OUT ATTN (dB) 0 80 100 RL= 4 Ohm Po= 4 W ref. -20 70 -40 60 50 -60 Rg= 600 Ohm 40 Vripple= 1 Vrms -80 30 20 10 100 f (Hz) 1000 10000 Figure 13. Output noise vs. source resistance. -100 5 70 60 10 100 1000 Rg (Ohm) 10000 100000 n (%) 90 80 n Vs=13.2V 70 RL=4 x 4 Ohm 60 f= 1 KHz SINE 50 40 40 Ptot 30 20 20 10 10 0 1 10 50 30 ”A” wgtd 9 Ptot (W) 80 22-22KHz lin. 8 Figure 14. Power dissipation & efficiency vs. output power (sine-wave operation) 90 Vs= 14.4V RL= 4 Ohm 7 Vs (V) En (uV) 130 120 110 100 90 80 70 60 50 40 30 20 6 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Po (W) 7/10 TDA7560 Figure 15. Power dissipation vs. ouput power (Music/Speech Simulation) 30 Figure 16. Power dissipation vs. output power (Music/Speech Simulation) Ptot (W) 60 55 50 45 40 35 30 25 20 15 10 5 Vs= 13.2V RL=4 x 4 Ohm 25 GAUSSIAN NOISE CLIP START 20 15 10 5 0 1 2 3 Po (W) 4 5 6 Ptot (W) Vs= 13.2V RL= 4 x 2 Ohm GAUSSIAN NOISE CLIP START 0 2 4 6 8 10 Po (W) APPLICATION HINTS (ref. to the circuit of fig. 1) SVR Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients.To conveniently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS 10µF. be employed to drive muting and stand-by pins in absence of true CMOS ports or microprocessors. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms. INPUT STAGE The TDA7560’s inputs are ground-compatible and can stand very high input signals (± 8Vpk) without any performances degradation. If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off will amount to 16 Hz. HEATSINK DEFINITION Under normal usage (4 Ohm speakers) the heatsink’s thermal requirements have to be deduced from fig. 15, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussiandistributed amplitude was employed for this simulation. Based on that, frequent clipping occurence (worst-case) will cause Pdiss = 26W. Assuming Tamb = 70°C and TCHIP = 150°C as boundary conditions, the heatsink’s thermal resistance should be approximately 2°C/W. This would avoid any thermal shutdown occurence even after longterm and full-volume operation. STAND-BY AND MUTING STAND-BY and MUTING facilities are both CMOS-COMPATIBLE. If unused, a straight connection to Vs of their respective pins would be admissible. Conventional low-power transistors can 8/10 TDA7560 DIM. A B C D E F (1) G G1 H (2) H1 H2 H3 L (2) L1 L2 (2) L3 L4 L5 M M1 N O R R1 R2 R3 R4 V V1 V2 V3 MIN. 4.45 1.80 0.75 0.37 0.80 23.75 28.90 22.07 18.57 15.50 7.70 3.70 3.60 mm TYP. 4.50 1.90 1.40 0.90 0.39 1.00 24.00 29.23 17.00 12.80 0.80 22.47 18.97 15.70 7.85 5 3.5 4.00 4.00 2.20 2 1.70 0.5 0.3 1.25 0.50 MAX. 4.65 2.00 MIN. 0.175 0.070 1.05 0.42 0.57 1.20 24.25 29.30 0.029 0.014 0.031 0.935 1.138 22.87 19.37 15.90 7.95 0.869 0.731 0.610 0.303 4.30 4.40 0.145 0.142 inch TYP. 0.177 0.074 0.055 0.035 0.015 0.040 0.945 1.150 0.669 0.503 0.031 0.884 0.747 0.618 0.309 0.197 0.138 0.157 0.157 0.086 0.079 0.067 0.02 0.12 0.049 0.019 MAX. 0.183 0.079 OUTLINE AND MECHANICAL DATA 0.041 0.016 0.022 0.047 0.955 1.153 0.904 0.762 0.626 0.313 0.169 0.173 5° (Typ.) 3° (Typ.) 20° (Typ.) 45° (Typ.) Flexiwatt25 (1): dam-bar protusion not included (2): molding protusion included H H1 V3 A H2 O H3 R3 L4 R4 V1 R2 L2 N L3 R L L1 V1 V2 R2 D R1 L5 R1 R1 E G V G1 F M M1 B C V FLEX25ME 9/10 TDA7560 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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