TIP105 ® PNP SILICON POWER DARLINGTON TRANSISTOR ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ DESCRIPTION The TIP105 is a silicon Epitaxial-Base PNP transistor in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear and switching applications. The preferred complementary NPN type is the TIP102. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) -60 V V CEO Collector-Emitter Voltage (I B = 0) -60 V V EBO Emitter-Base Voltage (I C = 0) -5 V IC I CM IB P tot T stg Tj April 2003 Parameter Collector Current Collector Peak Current -8 A -15 A Base Current -1 A Total Dissipation at T case ≤ 25 o C o T amb ≤ 25 C Storage Temperature 80 2 W W Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/5 TIP105 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CEO Collector Cut-off Current (I B = 0) Parameter V CE = -30 V -50 µA I CBO Collector Cut-off Current (I E = 0) V CE = -60 V -50 µA I EBO Emitter Cut-off Current (I C = 0) V EB = -5 V -8 mA VCEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) * Test Conditions I C = -30 mA I C = -3 A I C = -8 A I B = -6 mA I B = -80 mA V BE * Base-Emitter Voltage I C = -8 A V CE = -4 V h FE * DC Current Gain I C = -3 A I C = -8 A I C = -3 A Group R Group O Group Y V CE = -4 V V CE = -4 V V CE = -4 V Forward Voltage of Commutation Diode (I B = 0) Typ. -60 Collector-Emitter Saturation Voltage VF * Min. I F = - I C = 10 A V -2 -2.5 V V -2.8 V 2000 200 18000 2000 4000 8000 5000 9000 18000 -2.8 The product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. Safe Operating Area 2/5 DC Current Gain V TIP105 Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 3/5 TIP105 TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 0.409 L2 16.40 0.645 L4 13.00 14.00 0.511 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 M DIA. 2.60 3.75 0.551 0.154 0.102 3.85 0.147 0.151 P011CI 4/5 TIP105 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5