BDX54F ® SILICON PNP POWER DARLINGTON TRANSISTOR ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BDX54F is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 160 V V CEO Collector-Emitter Voltage (I B = 0) 160 V V EBO Emitter-base Voltage (I C = 0) 5 V Collector Current 8 A Collector Peak Current 12 A Base Current 0.2 A Total Dissipation at T c ≤ 25 o C Storage Temperature 60 W IC I CM IB P tot T stg Tj Max. Operating Junction Temperature January 2000 -65 to 150 o C 150 o C 1/4 BDX54F THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 2.08 70 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Max. Unit I CEO Collector Cut-off Current (I E = 0) Parameter V CE = 80 V 0.5 mA I CBO Collector Cut-off Current (I B = 0) V CB = 160 V 0.2 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 5 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions I C = 50 mA Min. Typ. 160 V V CE(sat) ∗ Collector-emitter Saturation Voltage IC = 2 A I B =10 mA 2 V V BE(sat) ∗ Base-emitter Saturation Voltage IC = 2 A I B =10 mA 2.5 V h FE ∗ DC Current Gain IC = 2 A IC = 3 A V CE = 5 V V CE = 5 V VF∗ Parallel Diode Forward I F = 2 A Voltage 2.5 V h fe ∗ Small Signal Current Gain I C = 0.5 A f = 1MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/4 V CE = 2 V 500 150 20 BDX54F TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. inch 1.27 TYP. MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 0.106 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BDX54F Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4