UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES 1 * High Collector-Emitter voltage: VCEO=-300V(UTC MPSA92) VCEO=-200V(UTC MPSA93) *Collector Dissipation: Pc(max)=625mW TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE VCBO -300 -200 VCEO -300 -200 -5 625 5 -500 1.5 12 150 -55 ~ +150 UNIT Collector-Base Voltage V UTC MPSA92 UTC MPSA93 Collector-Emitter Voltage UTC MPSA92 UTC MPSA93 Emitter-Base Voltage Collector Dissipation (Ta=25°C) Derate Above 25℃ V VEBO Pc Collector Current Collector Dissipation (Tc=25°C) Derate Above 25℃ Ic Pc Junction Temperature Storage Temperature Tj TSTG V mW mW/℃ mA W mW/℃ °C °C ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified) PARAMETER SYMBOL Collector-Base Breakdown Voltage UTC MPSA92 UTC MPSA93 Collector-Emitter Breakdown Voltage UTC MPSA92 UTC MPSA93 Emitter-Base Breakdown Voltage BVCBO Collector Cut-Off Current UTC MPSA92 UTC MPSA93 ICBO UTC BVCEO BVEBO TEST CONDITIONS MIN TYP MAX UNIT Ic=-100µA, IE=0 -300 -200 V -300 -200 -5 V Ic=-1mA, IB=0 IE=-100µA, Ic=0 VCB=-200V, IE=0 VCB=-160V, IE=0 UNISONIC TECHNOLOGIES CO. LTD V -0.25 -0.25 µA 1 QW-R201-019,A UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS MIN Emitter Cut-Off Current IEBO VEB=-3V, Ic=0 DC Current Gain(note) hFE VCE=-10V, Ic=-1mA VCE=-10V, Ic=-10mA VCE=-10V, Ic=-30mA Ic=-20mA, IB=-2mA Ic=-20mA, IB=-2mA VCE=-20V, Ic=-10mA, f=100MHz VCB=-20V, IE=0 f=1MHz Collector-Emitter Saturation Voltage VCE(sat)1 Base-Emitter Saturation Voltage VBE(sat)1 Current Gain Bandwidth Product fT Collector Base Capacitance Ccb UTC MPSA92 UTC MPSA93 Note:Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)1<200mV(Class SIN) TYP MAX UNIT -0.10 µA -0.5 -0.90 V V MHz 6 8 pF 60 80 80 50 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 DC Current Gain Fig.2 Saturation Voltage 3 10 Ic=10*IB 2 10 1 10 0 10 0 -10 1 -10 2 -10 3 -10 VBE(sat) 2 -10 1 -10 2 -10 3 -10 Collector current, Ic(mA) Collector current, Ic(mA) Fig.4 Active-region safe operating area Fig.5 Current Gain Bandwidth product 3 -10 4 -10 CIB 1 10 CCB -1 -10 0 -10 1 -10 2 -10 Collector-Base voltage(V) ms s 0.1m C 1 .0 D 2 -10 MPSA93 MPSA92 1 -10 625mW Thermal limitation Ta=25°C bonding breakdown limitation Tj=150°C 0 -10 1 -10 2 -10 3 -10 Collector-Emitter voltage ( v) UTC Current gain bandwidth product(MHz) 3 10 al m °C er 25 Th c= T 5W n 1. atio it lim Collector current, Ic(mA) 3 -10 1 -10 0 -10 4 -10 VCE(sat) CIB(pF),CCB(pF) VCE(sat),VBE(sat) (mV) DC current Gain,HFE VCE=-10V 1 -10 Fig.3 Capacitance 2 10 4 -10 VCE=-20V f=100MHz 2 10 1 10 0 -10 1 -10 2 -10 Collector current, Ic(mA) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-019,A UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-019,A