TSC ABS8

ABS2 THRU ABS10
Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers
Voltage Range
200 to 1000 Volts
Current
1.0 Ampere
0.012(0.3)
0~10 O
0.010(0.25)
0.028(0.7)
0.024(0.6)
0.006(0.15)
0.002(0.05)
0.252(6.4)
0.236(6.0)
0.006(0.15)
0.177(4.5)
0.028(0.7)
0.128(3.25)
0.193(4.9)
0.055(1.40) MAX.
0.20(5.1)
0.056(1.42)
0.154(3.9)
0.048(1.22)
0.136(3.45)
0.161(4.1)
0.006(0.15)
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction utilizing
molded plastic technique
High temperature soldering guaranteed:
260℃ / 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
High surge current capability
0.002(0.05)
0.169(4.3)
Thin Mini-Dip
Features
DETAIL "A", SCALE=20/1
A
0.033(0.85)
0.026(0.65)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ABS2 ABS4
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
On glass-epoxy P.C.B.
On aluminum substrate
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 0.4A
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage
Typical Thermal resistance Junction to Lead
On aluminum substrate
On Glass-Epoxy substrate
Operating Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
200
140
200
400
280
400
ABS6 ABS8 ABS10 Units
600
420
600
800
560
800
1000
700
1000
V
V
V
I(AV)
0.8
1.0
A
IFSM
30
A
VF
095
V
IR
10
uA
RθJL
RθJA
25
62.5
80
-55 to +150
-55 to +150
TJ
TSTG
- 694 -
℃/W
℃
℃
RATINGS AND CHARACTERISTIC CURVES (ABS2 THRU ABS10)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL FORWARD CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT. (A)
1.6
AVERAGE FORWARD CURRENT. (A)
1.4
1.2
SIN
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
10
Tj=150 0C
1
0.1
0.0
160
O
Tj=25 0C
0.2
LEAD TEMPERATURE. ( C)
0.6
0.8
1.0
FORWARD VOLTAGE. (V)
1.2
1.4
1.6
FIG.4- FORWARD POWER DISSIPATION
FIG.3- MAXIMUM FORWARD CURRENT DERATING
CURVE
2.5
1.6
1.2
FORWARD POWER DISSIPATION (pF)
1.4
ALUMINA SUBSTRATE
50.8mm X 50.8mm
SOLDERING LAND 1mm X 1mm
CONDUCTOR LAYER 20 mm
SUBSTRATE THICKNESS 0.64mm
SIN
1.0
0.8
0.6
0.4
SIN
2.0
Tj=150 0C
1.5
1.0
0.5
0.2
0
0
20
40
60
80
100
120
140
0
0.0
160
0.2
0.4
0.6
0.8
1.0
AVERAGE RECTIFIED FORWARD CURRENT. (A)
O
AMBIENT TEMPERATURE. ( C)
1.2
FIG.5- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
35
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
0.4
- 695 -
30
25
20
IFSM
15
10ms 10ms
1 Cycle
Ta=40 C
NON-REPETITIVE,
Single Half Sine-Wave
SINE(JEDEC
WAVE, Method)
O
Tj = 25 C BEFORE
SURGE CURRENT IS APPLIED
10
5
0
1
10
NUMBER OF CYCLES (CYCLE)
100