TSM2N7002E 60V N-Channel MOSFET SOT-23 SOT-323 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (mA) 3 @ VGS = 10V 300 4 @ VGS = 4.5V 200 Block Diagram ● Low On-Resistance: 3Ω ● Low Input and Output Leakage Application ● Direct Logic-Level Interface: TTL/CMOS ● Solid-State Relays Ordering Information Part No. Package Packing TSM2N7002ECX RF TSM2N7002ECU RF SOT-23 SOT-323 3Kpcs / 7” Reel 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 300 mA IDM 1 A IS 300 mA Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 75 C Operating Junction Temperature 220 mW +150 o TJ, TSTG -55 to +150 o Symbol Limit TL 5 TJ Operating Junction and Storage Temperature Range 350 C C Thermal Performance Parameter Lead Temperature (1/8” from case) Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 357 Unit S o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. c. The power dissipation of the package may result in a continuous drain current. 1/7 Version: A07 TSM2N7002E 60V N-Channel MOSFET Electrical Specifications (Ta = 25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 10µA BVDSS 60 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.0 -- 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1.0 µA 800 1300 -- 500 700 -- -- 1.9 3 -- 2.7 4 On-State Drain Current Drain-Source On-State Resistance VGS = 10V, VDS = 7.5V VGS = 4.5V, VDS = 10V VGS = 10V, ID = 300mA VGS = 4.5V, ID = 200mA ID(ON) RDS(ON) mA Ω Forward Transconductance VDS = 15V, ID = 300mA gfs -- 320 -- mS Diode Forward Voltage IS = 300mA, VGS = 0V VSD -- 0.9 1.2 V Qg -- 0.4 0.6 Qgs -- 0.06 -- Qgd -- 0.06 -- Ciss -- 20 50 Coss -- 11 25 Crss -- 4 5 td(on) -- 7.5 20 tr -- 6 -- td(off) -- 7.5 20 -- 3 -- Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, ID = 250mA, VGS = 4.5V VDS = 25V, VGS = 0V, f = 1.0MHz nC pF c Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 30V, ID = 100mA, VGEN = 10V, RG = 10Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/7 nS Version: A07 TSM2N7002E 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/7 Version: A07 TSM2N7002E 60V N-Channel MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/7 Version: A07 TSM2N7002E 60V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Marking Diagram 2E = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 5/7 Version: A07 TSM2N7002E 60V N-Channel MOSFET SOT-323 Mechanical Drawing DIM A A1 bp C D E e e1 He Lp Q W Θ SOT-323 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.80 1.10 0.0315 0.0433 -0.10 -0.0039 0.30 0.40 0.0118 0.0157 0.10 0.25 0.0039 0.0098 1.80 2.20 0.0709 0.0866 1.15 1.35 0.0453 0.0531 1.30 -0.0512 -0.65 -0.0256 -2.00 2.20 0.0787 0.0866 0.15 0.45 0.0059 0.0177 0.13 0.23 0.0051 0.0091 0.20 -0.0079 -o o 10 -10 -- Marking Diagram 2E = Device Code Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 6/7 Version: A07 TSM2N7002E 60V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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