UTC-IC BT136E

UTC BT136E
TRIAC
TRIACS
DESCRIPTION
Passivated triacs in a plastic envelope, intended for use in
applications requiring high bidirectional transient and blocking
voltage capability and high thermal cycling performance. Typical
applications include motor control, industrial and domestic
lighting, heating and static switching.
1
SYMBOL
MT2
TO-220
G
1:MT1
MT1
2:MT2
3:GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages
BT136-600
BT136-800
RMS on-state current
full sine wave; Tmb ≤107 °C
Non-repetitive peak on-state current
(Full sine wave; Tj = 25 °C prior to surge)
t = 20ms
t = 16.7 ms
I2t for fusing
t = 10 ms
Repetitive rate of rise of on-state current after triggering
ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs
T2+G+
T2+GT2-GT2-G+
SYMBOL
RATINGS
UNIT
VDRM
600*
800
V
IT(RMS)
4
A
25
27
A
ITSM
I2t
dIT /dt
A2s
3.1
50
50
50
10
A/μs
Peak gate voltage
VGM
5
V
Peak gate current
IGM
2
A
Peak gate power
PGM
5
W
Average gate power (over any 20 ms period)
PG(AV)
0.5
W
℃
Storage temperature
Tstg
-40 ~ 150
℃
Operating junction temperature
Tj
125
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch
to the on-state. The rate of rise of current should not exceed 3A/µs.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R401-005,A
UTC BT136E
TRIAC
THERMAL RESISTANCES
PARAMETER
SYMBOL
Thermal resistance Junction to mounting base
Full cycle
Half cycle
Thermal resistance Junction to ambient
(In free air)
MIN
TYP
Rth j-mb
Rth j-a
MAX
UNIT
3.0
3.7
K/W
K/W
60
K/W
ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX UNIT
STATIC CHARACTERISTICS
Gate trigger current
IGT
VD = 12 V; IT = 0.1 A
T2+G+
T2+GT2-GT2-G+
2.5
4.0
5.0
11
10
10
10
25
IL
VD = 12 V; IGT = 0.1 A
T2+G+
T2+GT2-GT2-G+
3.0
10
2.5
4.0
15
20
15
20
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400V ; IT = 0.1 A; Tj =125°C
VD = VDRM(max) ; Tj = 125 °C
2.2
1.4
0.7
0.4
0.1
15
1.7
1.5
Latching current
Holding current
On-state voltage
Gate trigger voltage
IH
VT
VGT
Off-state leakage current
ID
0.25
0.5
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
Critical rate of rise of Off-state
voltage
Gate controlled turn-on time
UTC
dVD /dt
VDM = 67% VDRM(max) ; Tj =125°C;
exponential waveform; gate open
circuit
50
V/µs
tgt
ITM = 6 A; VD= VDRM(max) ; IG=0.1A;
dIG/dt=5A/µs
2
µs
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-005,A
UTC BT136E
TRIAC
Tmb(max)/C
8 Ptot/W
7
101
3
104
α=180
107
120
110
90
60
113
30
116
2
119
1
122
α
6
α
5
4
125
5
4
2
3
IT(RMS)/A
Fig.1. Maximum on-state dissipation,Ptot,versus rms
on-state current,IT(RMS)where α=conduction angle.
0
0
1
5
IT(RMS)/A
107℃
4
3
2
1
0
-50
0
50
100
150
Tmb/C
Fig.4. Maximum permissible rms current lT(RMS),
versus mounting base temperature Tmb
12IT(RMS)/A
1000 ITSM/A
ITSM
IT
10
time
T
8
Tj initial=25℃max
100
6
dIT/dt limit
4
T2-G+ quadrant
10
10us
100us
2
1ms
10ms
100ms
0
0.01
30
ITSM/A
1.6
ITSM
IT
25
0.1
1
10
surge duration /S
Fig. 5.Maximum permissible repetitive rms on-state
current lT(RMS),versus surge duration,for sinusoidal
currents,f=50HZ;Tmb≦107℃
T/s
Fig.2.Maximum Permissible non-repetitive peak
on-state Current ITSM,versus pulse width tp, for
sinusoidal currents,tp≦20ms
VGT(Tj)
VGT(25℃)
1.4
T
20
time
1.2
Tj initial=25℃max
15
1
10
0.8
5
0.6
0
0
10
100
1000
Number of cycles at 50Hz
Fig3.Maximum Permissible non-repetitive peak
on-state current ITSM,versus number of cycles,for
sinusoidal currents,f=50HZ.
UTC
0.4
-50
0
50
100
0
50
100
150
150
Tj/℃
Fig.6. Normalised gate trigger voltage
.
VGT(Tj)/VGT(25℃),versus junctiontemperature Tj
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R401-005,A
UTC BT136E
TRIAC
IGT(Tj)
3 IGT(25℃)
2.5
8
1.5
6
1
4
0.5
2
0
50
Tj/℃
100
Tj=125℃
Tj=25℃
10
2
0
-50
IT/A
12
T2+G+
T2+GT2-GT2-G+
150
0
0
Fig. 7.Normalised gate trigger Current
IGT(Tj)/IGT(25℃),versus junction temperature Tj.
3
typ
max
Vo=1.27V
Rs=0.091Ohms
0.5
1
1.5
VT/V
2
2.5
3
Fig.10.Typical and maximum on-state characteristic.
IL(Tj)
IL (25℃)
10
Zth j-mb(K/W )
unidirectional
2.5
bidirectional
1
2
1.5
1
tp
PD
0.1
0.5
t
0
-50
0
50
100
150
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp/s
Tj/℃
Fig.11.Transient thermal impedance Zthj-mb,versus
pulse width tp.
Fig.8.Normalised latching Current IL(Tj)/IL(25℃),
versus junction temperature Tj
IH(Tj)
3 IH (25℃)
1000
dVD/dt(V/us)
2.5
2
1.5
10
1
0.5
0
-50
0
50
100
150
Tj/℃
Fig. 9.Normalised holding current IH (Tj)/IH (25℃),
versus junction temperature Tj.
UTC
1
0
50
100
150
Tj/C
Fig.12.Typical,critical rate of rise of off-satate
voltage,dV D/dt versus junction
temperature Tj
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R401-005,A
UTC BT136E
TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R401-005,A