UTC BT136E TRIAC TRIACS DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. 1 SYMBOL MT2 TO-220 G 1:MT1 MT1 2:MT2 3:GATE ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak off-state voltages BT136-600 BT136-800 RMS on-state current full sine wave; Tmb ≤107 °C Non-repetitive peak on-state current (Full sine wave; Tj = 25 °C prior to surge) t = 20ms t = 16.7 ms I2t for fusing t = 10 ms Repetitive rate of rise of on-state current after triggering ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs T2+G+ T2+GT2-GT2-G+ SYMBOL RATINGS UNIT VDRM 600* 800 V IT(RMS) 4 A 25 27 A ITSM I2t dIT /dt A2s 3.1 50 50 50 10 A/μs Peak gate voltage VGM 5 V Peak gate current IGM 2 A Peak gate power PGM 5 W Average gate power (over any 20 ms period) PG(AV) 0.5 W ℃ Storage temperature Tstg -40 ~ 150 ℃ Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch to the on-state. The rate of rise of current should not exceed 3A/µs. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-005,A UTC BT136E TRIAC THERMAL RESISTANCES PARAMETER SYMBOL Thermal resistance Junction to mounting base Full cycle Half cycle Thermal resistance Junction to ambient (In free air) MIN TYP Rth j-mb Rth j-a MAX UNIT 3.0 3.7 K/W K/W 60 K/W ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS Gate trigger current IGT VD = 12 V; IT = 0.1 A T2+G+ T2+GT2-GT2-G+ 2.5 4.0 5.0 11 10 10 10 25 IL VD = 12 V; IGT = 0.1 A T2+G+ T2+GT2-GT2-G+ 3.0 10 2.5 4.0 15 20 15 20 VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400V ; IT = 0.1 A; Tj =125°C VD = VDRM(max) ; Tj = 125 °C 2.2 1.4 0.7 0.4 0.1 15 1.7 1.5 Latching current Holding current On-state voltage Gate trigger voltage IH VT VGT Off-state leakage current ID 0.25 0.5 mA mA mA V V V mA DYNAMIC CHARACTERISTICS Critical rate of rise of Off-state voltage Gate controlled turn-on time UTC dVD /dt VDM = 67% VDRM(max) ; Tj =125°C; exponential waveform; gate open circuit 50 V/µs tgt ITM = 6 A; VD= VDRM(max) ; IG=0.1A; dIG/dt=5A/µs 2 µs UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-005,A UTC BT136E TRIAC Tmb(max)/C 8 Ptot/W 7 101 3 104 α=180 107 120 110 90 60 113 30 116 2 119 1 122 α 6 α 5 4 125 5 4 2 3 IT(RMS)/A Fig.1. Maximum on-state dissipation,Ptot,versus rms on-state current,IT(RMS)where α=conduction angle. 0 0 1 5 IT(RMS)/A 107℃ 4 3 2 1 0 -50 0 50 100 150 Tmb/C Fig.4. Maximum permissible rms current lT(RMS), versus mounting base temperature Tmb 12IT(RMS)/A 1000 ITSM/A ITSM IT 10 time T 8 Tj initial=25℃max 100 6 dIT/dt limit 4 T2-G+ quadrant 10 10us 100us 2 1ms 10ms 100ms 0 0.01 30 ITSM/A 1.6 ITSM IT 25 0.1 1 10 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50HZ;Tmb≦107℃ T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp, for sinusoidal currents,tp≦20ms VGT(Tj) VGT(25℃) 1.4 T 20 time 1.2 Tj initial=25℃max 15 1 10 0.8 5 0.6 0 0 10 100 1000 Number of cycles at 50Hz Fig3.Maximum Permissible non-repetitive peak on-state current ITSM,versus number of cycles,for sinusoidal currents,f=50HZ. UTC 0.4 -50 0 50 100 0 50 100 150 150 Tj/℃ Fig.6. Normalised gate trigger voltage . VGT(Tj)/VGT(25℃),versus junctiontemperature Tj UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R401-005,A UTC BT136E TRIAC IGT(Tj) 3 IGT(25℃) 2.5 8 1.5 6 1 4 0.5 2 0 50 Tj/℃ 100 Tj=125℃ Tj=25℃ 10 2 0 -50 IT/A 12 T2+G+ T2+GT2-GT2-G+ 150 0 0 Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25℃),versus junction temperature Tj. 3 typ max Vo=1.27V Rs=0.091Ohms 0.5 1 1.5 VT/V 2 2.5 3 Fig.10.Typical and maximum on-state characteristic. IL(Tj) IL (25℃) 10 Zth j-mb(K/W ) unidirectional 2.5 bidirectional 1 2 1.5 1 tp PD 0.1 0.5 t 0 -50 0 50 100 150 0.01 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp/s Tj/℃ Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. Fig.8.Normalised latching Current IL(Tj)/IL(25℃), versus junction temperature Tj IH(Tj) 3 IH (25℃) 1000 dVD/dt(V/us) 2.5 2 1.5 10 1 0.5 0 -50 0 50 100 150 Tj/℃ Fig. 9.Normalised holding current IH (Tj)/IH (25℃), versus junction temperature Tj. UTC 1 0 50 100 150 Tj/C Fig.12.Typical,critical rate of rise of off-satate voltage,dV D/dt versus junction temperature Tj UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R401-005,A UTC BT136E TRIAC UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-005,A