UTC BT150 SCRs DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SYMBOL 1 A K TO-220 G 1: CATHODE 2: ANODE 3: GATE ABSOLUTE MAXIMUM RATINGS. PARAMETER Repetitive peak off-state voltages BT150-500 BT150-650 BT150-800 Average on-state current (half sine wave; Tmb ≤113 °C) SYMBOL VDRM , VRRM IT(AV) RATING UNIT 500* 650* 800 2.5 V A 4 A RMS on-state current IT(RMS) (all conduction angles) Non-repetitive peak on-state current (half sine wave; Tj = 25 °C prior to surge) A ITSM 35 t = 10 ms 38 t = 8.3 ms I2t for fusing (t = 10 ms) I2t 6.1 A2s Repetitive rate of rise of on-state current after triggering A/μs dIT /dt 50 (ITM = 10 A; IG = 50 mA; dIG /dt = 50 mA/ms) Peak gate current IGM 2 A Peak gate voltage VGM 5 V Peak reverse gate voltage VRGM 5 V Peak gate power (over any 20 ms period) PGM 5 W Average gate power PG(AV) 0.5 W ℃ Storage temperature Tstg -40~150 ℃ Operating junction temperature Tj 125** *Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/µs. ** Note: operation above 110℃ may require the use of a gate to cathode resistor of 1kΩ or less. UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-008,B UTC BT150 THERMAL RESISTANCES PARAMETER SYMBOL Thermal resistance Junction to mounting base Thermal resistance Junction to ambient In free air MIN Rth j-mb Rth j-a TYP MAX UNIT 2.5 K/W K/W 60 STATIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER SYMBOL Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage IGT IL IH VT VGT Off-state leakage current I D , IR CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = VDRM(max) ; IT = 0.1 A; Tj = 110 °C VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 °C MIN TYP MAX UNIT 200 10 6 1.8 1.5 mA mA MA V 0.1 15 0.17 0.10 1.23 0.4 0.2 0.1 0.5 mA TYP MAX UNIT V DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER SYMBOL Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated Turn-off time UTC dVD /dt tgt tq CONDITIONS VDM = 67% VDRM(max) ; Tj = 125 °C; exponential waveform; RGK = 100Ω ITM = 10 A; VD = VDRM(max) ; IG = 5mA; dIG /dt = 0.2A/µs VD = 67% VDRM(max) ; Tj = 125 °C; ITM = 8A; VR = 10V; dITM /dt = 10 A/μs; dVD /dt = 2V/μs; RGK = 1kΩ MIN 50 V/µs 2 µs 100 µs UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-008,B UTC BT150 6 Ptot/W Tmb(max)/C conduction form angle factor degrees a 4 30 2.8 60 2.2 90 1.9 120 1.57 180 5 4 3 110 1.9 2.2 a=1.57 115 2.8 117.5 2 120 1 α 0.5 1 1.5 2 30 ITSM T T time Tj initial=25℃max 20 10 122.5 2.5 3 125 0 1 IF(AV)/A Fig.1. Maximum on-state dissipation,Ptot,versus average on-state current,IT(AV),where a=form factor=IT(RMS)/IT(AV). 1000 ITSM/A IT 112.5 4 0 0 40 10 1000 100 Number of half cycles at 50Hz Fig4.Maximum Permissible non-repetitive peak on-state current ITSM,versus number of cycles,for sinusoidal currents,f=50Hz. ITSM/A 12 IT(RMS)/A 10 8 dIT/dt limit 100 6 ITSM IT T 4 time 2 Tj initial=25℃max 10 10us 5 100us 10ms 1ms T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp, for sinusoidal currents,tp≒10ms IT(RMS)/A 0 0.01 10 0.1 1 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50Hz;Tmb ≦113℃ 1.6 113℃ 4 VGT(Tj) VGT(25℃) 1.4 1.2 3 1 2 0.8 1 0.6 0 -50 0 50 Tmb/C 100 150 Fig.3. Maximum permissible rms current lT(RMS), versus mounting base temperature Tmb UTC 0.4 -50 0 50 100 0 50 100 150 150 Tj/℃ Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25℃,versus junction temperature Tj. UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-008,B UTC BT150 IGT(Tj) IGT(25℃) 3 2.5 10 2 8 1.5 6 1 4 0.5 2 0 -50 50 100 150 Tj/C Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25℃),versus junction temperature Tj. 3 IT/A 2 0 IL(Tj) IL(25℃) Tj=125℃ Tj=25℃ typ Vo=1.26V Rs=0.099Ω 0 0 0.5 1 1.5 VT/V max 2 2.5 3 Fig.10.Typical and maximum on-state characteristic. 10 Zth j-mb(K/W) 2.5 1 2 1.5 1 P 0.1 D 0.5 t 0 -50 0 50 Tj/C 100 150 0.01 10us IH(Tj) IH(25℃) 0.1ms 1ms 10ms 0.1s tp/s 1s 10s Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. Fig.8.Normalised latching Current IL(Tj)/IL(25℃), versus junction temperature Tj 3 tp 1000 dVD/dt(V/us) 2.5 RGK=100Ω 100 2 1.5 10 1 0.5 0 -50 50 100 150 Tj/C Fig. 9.Normalised holding current IH(Tj)/IH(25℃), versus junction temperature Tj. UTC 0 1 0 50 100 150 Tj/C Fig.12.Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-008,B UTC BT150 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R301-008,B