BT134 series ! GENERAL DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate MAX. BT134- VDRM PIN CONFIGURATION UNIT 600 Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current IT(RMS) ITSM PINNING - TO126 Triacs logic level 600 V 4 25 A A SYMBOL tab T2 T1 G 1 23 2 LIMITING VALUES L SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) ITSM RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature CONDITIONS full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ over any 20 ms period MIN. MAX. UNIT - 6001 V - 4 A - 25 27 3.1 A A A2s -40 - 50 50 50 10 2 5 5 0.5 150 125 A/µs A/µs A/µs A/µs A V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. June 2001 1 Rev 1.400 BT134 series ! Triacs logic level THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 60 3.0 3.7 - K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER IGT Gate trigger current IL Latching current IH Holding current VT VGT On-state voltage Gate trigger voltage ID Off-state leakage current CONDITIONS MIN. BT134VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C TYP. MAX. UNIT ... ...F - 5 8 11 30 35 35 35 70 25 25 25 70 mA mA mA mA - 7 16 5 7 5 20 30 20 30 15 20 30 20 30 15 mA mA mA mA mA 0.25 1.4 0.7 0.4 1.70 1.5 - V V V - 0.1 0.5 mA MIN. TYP. MAX. UNIT DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER dVD/dt Critical rate of rise of off-state voltage dVcom/dt Critical rate of change of commutating voltage tgt Gate controlled turn-on time June 2001 CONDITIONS BT134VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 4 A; dIcom/dt = 1.8 A/ms; gate open circuit ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs 2 ... 100 ...F 50 250 - V/µs - - 50 - V/µs - - 2 - µs Rev 1.400 BT134 series ! 8 Ptot / W Tmb(max) / C Triacs logic level 5 101 IT(RMS) / A 104 7 6 = 180 1 107 C 4 107 120 5 110 90 60 4 3 113 30 3 116 2 119 1 122 2 1 0 0 1 2 3 IT(RMS) / A 125 5 4 0 -50 50 Tmb / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. 1000 0 ITSM / A 12 IT(RMS) / A ITSM IT 10 T time 8 Tj initial = 25 C max 100 6 dIT /dt limit 4 T2- G+ quadrant 2 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. 30 ITSM / A BT136 T 1.4 time Tj initial = 25 C max 1.2 15 1 10 0.8 5 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. June 2001 VGT(Tj) VGT(25 C) I TSM IT 20 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C. 1.6 25 0.1 1 surge duration / s 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.400 BT134 series ! 3 IGT(Tj) IGT(25 C) Triacs logic level 12 Tj = 125 C Tj = 25 C T2+ G+ T2+ GT2- GT2- G+ 2.5 2 typ 10 max Vo = 1.27 V Rs = 0.091 ohms 8 6 1.5 1 4 0.5 2 0 -50 0 50 Tj / C 100 0 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IT / A IL(Tj) IL(25 C) 10 Zth j-mb (K/W) unidirectional 2.5 bidirectional 1 2 1.5 0.1 1 P D tp t 0.5 0 -50 0 50 Tj / C 100 0.01 10us 150 1ms 10ms 0.1s 1s 10s tp / s Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dVcom/dt (V/us) IH(Tj) IH(25C) 1000 off-state dV/dt limit 2.5 BT136 SERIES 100 2 BT136...F SERIES 1.5 10 1 0.5 0 -50 dIcom/dt = 5.1 3.9 A/ms 0 50 Tj / C 100 1 150 0 Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. June 2001 3 50 2.3 1.8 100 1.4 150 Tj / C Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. 4 Rev 1.400