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BT134 series
GENERAL DESCRIPTION
SYMBOL
Glass passivated triacs in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
T2
SOT82
TO-126
T1
G
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX. MAX. MAX. UNIT
V DRM
BT134BT134BT134Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
500
500F
500G
500
600
600F
600G
600
800
800F
800G
800
V
4
25
4
25
4
25
A
A
IT(RMS)
ITSM
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
CONDITIONS
MIN.
-
full sine wave; Tmb ≤ 107 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
T2+ GT2- GT2- G+
over any 20 ms period
MAX.
-500
5001
-600
6001
UNIT
-800
800
V
-
4
A
-
25
27
3.1
A
A
A2s
-40
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
2014-6-13
1
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BT134 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
100
3.0
3.7
-
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
IGT
Gate trigger current
IL
Latching current
IH
Holding current
VT
VGT
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
CONDITIONS
MIN.
BT134VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
VD = VDRM(max);
Tj = 125 ˚C
TYP.
MAX.
UNIT
...
...F
...G
-
5
8
11
30
35
35
35
70
25
25
25
70
50
50
50
100
mA
mA
mA
mA
-
7
16
5
7
5
20
30
20
30
15
20
30
20
30
15
30
45
30
45
30
mA
mA
mA
mA
mA
0.25
1.4
0.7
0.4
1.70
1.5
-
V
V
V
-
0.1
0.5
mA
MIN.
TYP.
MAX.
UNIT
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
dVD/dt
Critical rate of rise of
off-state voltage
dVcom/dt
Critical rate of change of
commutating voltage
tgt
Gate controlled turn-on
time
2014-6-13
CONDITIONS
BT134VDM =67% VDRM(max);
Tj = 125 ˚C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 95 ˚C;
IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
ITM = 6 A; VD = VDRM(max);
IG = 0.1 A;
dIG/dt = 5 A/µs;
2
...
100
...F
50
...G
200
250
-
V/µs
-
-
10
50
-
V/µs
-
-
-
2
-
µs
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BT134 series
8
BT136
Ptot / W
Tmb(max) / C
5
101
IT(RMS) / A
BT136
104
7
6
= 180
1
107 C
4
107
120
5
110
90
60
4
3
113
30
3
116
2
119
1
122
2
1
0
0
1
2
3
IT(RMS) / A
125
5
4
0
-50
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
50
Tmb / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
BT136
ITSM / A
0
12
BT136
IT(RMS) / A
ITSM
IT
10
T
time
8
Tj initial = 25 C max
100
6
dIT /dt limit
4
T2- G+ quadrant
2
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
30
ITSM / A
BT136
T
Tj initial = 25 C max
1.2
1
10
0.8
5
0.6
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
2014-6-13
BT136
1.4
time
15
0
VGT(Tj)
VGT(25 C)
I TSM
IT
20
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 107˚C.
1.6
25
0.1
1
surge duration / s
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
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BT134 series
3
IGT(Tj)
IGT(25 C)
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ GT2- GT2- G+
2.5
2
8
1
4
0.5
2
50
Tj / C
100
0
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
IL(Tj)
IL(25 C)
max
Vo = 1.27 V
Rs = 0.091 ohms
6
0
typ
10
1.5
0
-50
BT136
IT / A
12
BT136
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
10
TRIAC
BT136
Zth j-mb (K/W)
unidirectional
2.5
bidirectional
1
2
1.5
0.1
1
P
D
tp
0.5
t
0
-50
0
50
Tj / C
100
0.01
10us
150
IH(Tj)
IH(25C)
1ms
10ms
0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
1000
TRIAC
dVcom/dt (V/us)
off-state dV/dt limit
BT134...G SERIES
2.5
BT134 SERIES
100
2
BT134...F SERIES
1.5
10
1
0.5
0
-50
dIcom/dt = 5.1
A/ms
0
50
Tj / C
100
1
150
3
50
2.3
1.8
100
1.4
150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
2014-6-13
0
3.9
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
4
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