UNISONIC TECHNOLOGIES CO., LTD 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. 1 TO - 126 *Pb-free plating product number: 2SB1151L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead free 2SB1151-T60-T 2SB1151L-T60-T Package Packing TO-126 Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., LTD 1 QW-R204-022,A 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V DC IC -5 A Collector Current -8 Pulse(Note 3) ICP Base Current IB -1 A Ta=25℃ 1.5 Power Dissipation PD W Tc=25℃ 20 Junction Temperature TJ 125 Operating Temperature TOPR 0 ~ +70 Storage Temperature TSTG -40 ~ +150 Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2.The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from -40℃~ 85℃. 3.PW ≤10ms, Duty Cycle ≤50% ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SYMBOL ICBO IEBO VCE(sat) VBE(sat) hFE 1 hFE 2 hFE 3 TEST CONDITIONS VCB=-50V, IE=0 VEB=-7V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-1V, IC=-0.1A VCE=-1V, IC=-2A VCE=-2V, IC=-5A MIN TYP MAX UNIT -10 µA -10 µA -0.14 -0.3 V -.0.9 -1.2 V 60 160 50 400 OUTPUT Turn On Time Switching Time Storage Time Fall Time tON 0 IB1 tSTG tF IB2 INPUT 20µsec -IB1=IB2=0.2A DUTY CYCLE≤ 1% IB1 0.15 1 0.78 2.5 0.18 1 5Ω IB2 µS VCC=-10V Pulse test : PW ≤350 µS, Duty Cycle ≤2% Pulse CLASSIFICATION OF hFE2 RANK RANGE O 160 ~ 320 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 200 ~ 400 2 QW-R204-022,A 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS PD - Ta dT - T C 160 TC =Ta INFINTE HEAT SINK 140 15 10 100 S/ b 80 60 40 0 50 100 150 200 0 250 0 25 50 Ambient Temperature, Ta (℃) -1 -0.5 * SINGLE NONREPETIVE PULSED T a =25℃ CURVES MUST BE DERATED LINERLY WITH INCREASE IN TEMPERATURE -0.1 -1 -3 -5 VCEO( MAX) -0.3 -10 2m 10 s* m s 20 0m * s -10 -30 -50 Collector Current, IC（A） IC (DC)MAX. -3 -8 -6 VCEO (SUS) -4 -2 0 -100 Collector-Emitter Voltage, VCE（V） -20 -4 Dc Current Gain, h FE 0m A IB=-40mA I B=-30mA IB=-20mA IB = -20 Collector Current, I C（A） -6 IB=-10mA -2 IB =0mA 0 -0.4 -0.8 -1.2 -1.6 -2.0 Collector-Emitter Voltage, VCE（V） UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -60 -80 -100 h FE - IC A 50m 0mA mA 1 0 I B= =- 10 I =- 8 B IB IB =-60mA -8 -40 Collector-Emitter Voltage, VCE（V） I C - VCE -10 100 125 150 175 200 Reverse Bias Safe Operating Area d ite m Li n ed io it a t im ip L iss S/b D Collector Current, I C（A） -5 I C (Pulse) MAX. 75 Case Temperature, T C (℃) Safe Oerating Area -10 ite d d it e m Li 20 0 Lim n 5 120 io at IC Derating, dT (%) 20 ip ss Di Power Dissipation, PD (W) 25 1K 500 300 VCE=-2V 100 50 30 VCE=-1V 10 5 3 1 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 Collector Current, I C (A) 3 QW-R204-022,A 2SB1151 PNP EPITAXIAL SILICON TRANSISTOR Staturation Voltage, VBE(Sat), VCE(Sat) (V) TYPICAL CHARACTERISTICS VBE(Sat) , VCE(Sat) - IC -10 -5 -3 IC/I B=10 VBE(sat) -1 -0.5 -0.2 -0.1 -0.05 -0.03 -0.01 VCE(sat) -0.03 -0.1 -0.3 -1 -3 -10 Collector Current, I C (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R204-022,A