UNISONIC TECHNOLOGIES CO., LTD UF450 Power MOSFET 12 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 The UF450 uses advanced UTC technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. FEATURES * RDS(ON) = 0.4Ω@VGS = 10V * Ultra low gate charge (max. 120nC ) * Low reverse transfer capacitance ( CRSS = typical 240pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability TO-247 *Pb-free plating product number: UF450L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UF450-T47-T UF450L-T47-T www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-247 Pin Assignment 1 2 3 G D S Packing Tube 1 of 7 QW-R502-185.A UF450 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Avalanche Current Single Pulse Avalanche Energy (Note 2) Power Dissipation (TC=25℃) SYMBOL RATINGS UNIT VGSS ±20 V ID 12 A IDM 48 A IAR 12 A EAS 8.0 mJ 190 W PD Peak Diode Recovery dv/dt (Note 2) dv/dt 3.5 V/ns ℃ Junction Temperature TJ +150 ℃ Strong Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP θJA θjC ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified) Junction-to- Ambient Junction-to-Case MAX 30 0.83 UNIT ℃/W ℃/W PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS =0 V, ID =1.0 mA 500 Drain-Source Leakage Current IDSS VDS=400V,VGS =0 V 25 Gate-Source Leakage Current IGSS VDS =0 V, VGS = ±20V ±100 Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25℃, ID=1.0mA 0.78 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250 µA 2.0 4.0 VGS =10V, ID =7.75A 400 Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID =12A 500 DYNAMIC PARAMETERS Input Capacitance CISS 2700 VDS= 25V, VGS =0V, Output Capacitance COSS 600 f=1.0MHz 240 Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG 55 120 VDS =250V, VGS =10V, Gate Source Charge QGS 5.0 19 ID =12A 27 70 Gate Drain Charge QGD Turn-ON Delay Time tD(ON) 35 VDD=250V, ID =12A, Turn-ON Rise Time tR 190 RG =2.35Ω Turn-OFF Delay Time tD(OFF) 170 Turn-OFF Fall-Time tF 130 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS IS=12A,VGS=0V, TJ =25℃ 1.7 Drain-Source Diode Forward Voltage VSD Maximum Continuous Drain-Source Diode IS 12 Forward Current Maximum Pulsed Drain-Source Diode ISM 48 Forward Current IF=12 A, dI/dt≤100A/µs, Reverse Recovery Time tRR 1600 TJ =25℃,VDD≤50V (Note3) Reverse Recovery Charge QRR 14 Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. VDD = 50V, starting TJ = 25℃, Peak IL = 12A, ISD ≤ 12, di/dt ≤ 130A/µs,VDD≤ 500V, TJ≤150℃Suggested RG =2.35Ω 3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT V µA nA V/℃ V mΩ pF nC ns V A ns µc 2 of 6 QW-R502-185.A UF450 Power MOSFET TEST CIRCUITS AND WAVEFORMS Switching Time Test Circuit VGS VDS RD Switching Time Waveforms VDS 90 DUT RG + V - DD VGS=10V 10 VGS td(on) Pulse Width≤1µs Duty Cycle≤0.1 td(off) tf Unclamped Inductive Waveforms Unclamped Inductive Test Circuit VGS tr VDS L V(BR)DSS 15V tP Driver DUT RG VDD + - VGS =10V 0V tP IAS 0.01Ω IAS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-185.A UF450 Power MOSFET TYPICAL CHARACTERISTICS Typical Output Characteristics Typical Output Characteristics 4.5,5.0,5.5,6.0,7.0,8.0,10,15V Drain Current,ID (A) Drain Current,ID (A) 4.5,5.0,5.5,6.0,7.0,8.0,10,15V 101 101 4.5V 4.5V 100 100 100 20μs Pulse Width TC=25℃ 101 Drain to Source Voltage,VDS (V) 100 Normalized Drain to Source OnResistance,RDS(ON) Drain Current,ID (A) Typical Transfer Characteristics 150℃ 101 25℃ 100 VDS=50V 20μs Pulse Width 101 Drain to Source Voltage,VDS (V) Normalized On-Resistance vs. Temperature 3.0 ID=12A 2.5 2.0 1.5 1.0 0.5 VGS=10V 0.0 -50 -40 -20 0 20 40 60 80 100 120140 160 Junction Temperature,TJ (℃) 10 Single Pulse Energy,EAS (mJ) 5 7 8 9 6 Gate to Source Voltage,VGS (V) Drain Current,ID (A) 4 20μs Pulse Width TC=150℃ UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-185.A UF450 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Capacitance (pF) Gate to Source Voltage,VGS (V) 103 Maximum Safe Operating Area 150℃ 1 10 Drain Current,ID (A) Reverse Drain Current,IS (A) Body-Diode Characteristics 25℃ 10 0 102 10μs 100μs 10 1ms 10ms 1 10-1 0.4 VGS=0V 0.6 0.8 1.0 1.2 Body Diode Forward Voltage,VSD (V) RDS(ON) Limited TC=25℃ TJ=150℃ Single Pulse 0.1 1 102 10 Drain to Source Voltage,VDS (V) 103 Maximum Effective Transient Thermal Impedance,Junction-to-Case 10 Thermal Response, ZthJC In descending order D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse 1 PDM 0.1 t 1 10 -2 t 2 1.Duty Factor,D=t1/t2 2.Peak TJ=PDM.ZthJC+TC 10-3 10-5 10-4 10-3 10-2 0.1 Rectangular Pulse Duration,t1 (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 10 5 of 6 QW-R502-185.A UF450 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-185.A