UTC-IC UF450

UNISONIC TECHNOLOGIES CO., LTD
UF450
Power MOSFET
12 Amps, 500 Volts
N-CHANNEL POWER
MOSFET
„
DESCRIPTION
1
The UF450 uses advanced UTC technology to provide
excellent RDS(ON), low gate charge and operation with low
gate voltages. This device is suitable for use as a load
switch, in PWM applications, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.
„
FEATURES
* RDS(ON) = 0.4Ω@VGS = 10V
* Ultra low gate charge (max. 120nC )
* Low reverse transfer capacitance ( CRSS = typical 240pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
„
TO-247
*Pb-free plating product number: UF450L
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UF450-T47-T
UF450L-T47-T
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
Package
TO-247
Pin Assignment
1
2
3
G
D
S
Packing
Tube
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QW-R502-185.A
UF450
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Avalanche Current
Single Pulse Avalanche Energy (Note 2)
Power Dissipation (TC=25℃)
SYMBOL
RATINGS
UNIT
VGSS
±20
V
ID
12
A
IDM
48
A
IAR
12
A
EAS
8.0
mJ
190
W
PD
Peak Diode Recovery dv/dt (Note 2)
dv/dt
3.5
V/ns
℃
Junction Temperature
TJ
+150
℃
Strong Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
θJA
θjC
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
Junction-to- Ambient
Junction-to-Case
„
MAX
30
0.83
UNIT
℃/W
℃/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0 V, ID =1.0 mA
500
Drain-Source Leakage Current
IDSS
VDS=400V,VGS =0 V
25
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25℃, ID=1.0mA
0.78
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =250 µA
2.0
4.0
VGS =10V, ID =7.75A
400
Static Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID =12A
500
DYNAMIC PARAMETERS
Input Capacitance
CISS
2700
VDS= 25V, VGS =0V,
Output Capacitance
COSS
600
f=1.0MHz
240
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
55
120
VDS =250V, VGS =10V,
Gate Source Charge
QGS
5.0
19
ID =12A
27
70
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
35
VDD=250V, ID =12A,
Turn-ON Rise Time
tR
190
RG =2.35Ω
Turn-OFF Delay Time
tD(OFF)
170
Turn-OFF Fall-Time
tF
130
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS=12A,VGS=0V, TJ =25℃
1.7
Drain-Source Diode Forward Voltage
VSD
Maximum Continuous Drain-Source Diode
IS
12
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
48
Forward Current
IF=12 A, dI/dt≤100A/µs,
Reverse Recovery Time
tRR
1600
TJ =25℃,VDD≤50V (Note3)
Reverse Recovery Charge
QRR
14
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. VDD = 50V, starting TJ = 25℃, Peak IL = 12A, ISD ≤ 12, di/dt ≤ 130A/µs,VDD≤ 500V,
TJ≤150℃Suggested RG =2.35Ω
3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
4. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
UNIT
V
µA
nA
V/℃
V
mΩ
pF
nC
ns
V
A
ns
µc
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QW-R502-185.A
UF450
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Switching Time Test Circuit
VGS
VDS
RD
Switching Time Waveforms
VDS
90
DUT
RG
+
V
- DD
VGS=10V
10
VGS
td(on)
Pulse Width≤1µs Duty Cycle≤0.1
td(off) tf
Unclamped Inductive Waveforms
Unclamped Inductive Test Circuit
VGS
tr
VDS
L
V(BR)DSS
15V
tP
Driver
DUT
RG
VDD +
-
VGS =10V
0V
tP
IAS
0.01Ω
IAS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-185.A
UF450
„
Power MOSFET
TYPICAL CHARACTERISTICS
Typical Output Characteristics
Typical Output Characteristics
4.5,5.0,5.5,6.0,7.0,8.0,10,15V
Drain Current,ID (A)
Drain Current,ID (A)
4.5,5.0,5.5,6.0,7.0,8.0,10,15V
101
101
4.5V
4.5V
100
100
100
20μs Pulse Width
TC=25℃
101
Drain to Source Voltage,VDS (V)
100
Normalized Drain to Source OnResistance,RDS(ON)
Drain Current,ID (A)
Typical Transfer Characteristics
150℃
101
25℃
100
VDS=50V
20μs Pulse Width
101
Drain to Source Voltage,VDS (V)
Normalized On-Resistance vs. Temperature
3.0
ID=12A
2.5
2.0
1.5
1.0
0.5
VGS=10V
0.0
-50 -40 -20 0 20 40 60 80 100 120140 160
Junction Temperature,TJ (℃)
10
Single Pulse Energy,EAS (mJ)
5
7
8
9
6
Gate to Source Voltage,VGS (V)
Drain Current,ID (A)
4
20μs Pulse Width
TC=150℃
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-185.A
UF450
Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Capacitance (pF)
Gate to Source Voltage,VGS (V)
„
103
Maximum Safe Operating Area
150℃
1
10
Drain Current,ID (A)
Reverse Drain Current,IS (A)
Body-Diode Characteristics
25℃
10
0
102
10μs
100μs
10
1ms
10ms
1
10-1
0.4
VGS=0V
0.6
0.8
1.0
1.2
Body Diode Forward Voltage,VSD (V)
RDS(ON)
Limited
TC=25℃
TJ=150℃
Single Pulse
0.1
1
102
10
Drain to Source Voltage,VDS (V)
103
Maximum Effective Transient Thermal Impedance,Junction-to-Case
10
Thermal Response, ZthJC
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pulse
1
PDM
0.1
t
1
10
-2
t
2
1.Duty Factor,D=t1/t2
2.Peak TJ=PDM.ZthJC+TC
10-3
10-5
10-4
10-3
10-2
0.1
Rectangular Pulse Duration,t1 (s)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
1
10
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QW-R502-185.A
UF450
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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