UNISONIC TECHNOLOGIES CO., LTD 30N06 Power MOSFET 30 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products. FEATURES * RDS(ON) = 40mΩ@VGS = 10 V * Ultra low gate charge ( typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability *Pb-free plating product number: 30N06L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Package Normal Lead Free Plating 30N06-TA3-T 30N06L-TA3-T TO-220 30N06-TF3-T 30N06L-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 8 QW-R502-087.B 30N06 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate to Source Voltage RATINGS UNIT 60 V ±20 V TC = 25℃ 30 A Continuous Drain Current ID TC = 100℃ 21.3 A Pulsed Drain Current (Note 1) IDM 120 A Single Pulsed (Note 2) EAS 300 mJ Avalanche Energy 8 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 7.5 V/ns TO-220 79 W Power Dissipation PD TO-220F 45 W/℃ Junction Temperature TJ +150 ℃ Operation Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL TO-220 TO-220F TO-220 TO-220F θJA θJC RATING 62 62 1.9 2.7 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge SYMBOL BVDSS IDSS IGSS VGS = 0 V, ID = 250 µA VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V MIN TYP MAX UNIT 60 10 100 -100 △BVDSS/△TJ ID =250 µA, Referenced to 25℃ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 15 A VGS = 0 V, VDS = 25 V, f = 1MHz VDD = 30V, ID =15 A, VGS=10V (Note 4, 5) VDS = 60V, VGS = 10 V, ID = 24A (Note 4, 5) 0.06 2.0 32 V µA nA nA V/℃ 4.0 40 V mΩ 800 300 80 pF pF pF 12 79 50 52 20 6 9 ns ns ns ns nC nC nC 30 2 of 8 QW-R502-087.B 30N06 Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A Maximum Continuous Diode Forward Current Drain-Source IS Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 30A, dIF / dt = 100 A/µs (Note4) Reverse Recovery Charge QRR Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25℃ 3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃ 4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 5. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 40 70 1.4 V 30 A 120 A ns µC 3 of 8 QW-R502-087.B 30N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-087.B 30N06 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-087.B 30N06 TYPICAL CHARACTERISTICS Transfer Characteristics 101 10-1 101 100 Drain-Source Voltage, VDS (V) 150℃ 101 Note: 1. VDS=25V 2. 20µs Pulse Test 100 2 3 4 5 6 7 8 9 10 Gate-Source Voltage, VGS (V) Gate-to-Source Voltage, VGS (V) Reverse Drain Current, ISD (A) Drain-Source On-Resistance, RDS(ON) (mΩ) 100 4.5V 102 25 ℃ VGS Top: 15V 10V 8V 7V 102 6V 5.5V 5V Bottorm: 4.5V Drain Current, ID (A) Drain Current, ID (A) On-State Characteristics Capacitance (pF) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-087.B 30N06 Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) TYPICAL CHARACTERISTICS(Cont.) Maximum Drain Current vs. Case Temperature Maximum Safe Operating 30 100µs 10 10ms 1ms DC 1 *Note: 1. Tc=25℃ 2. TJ=150℃ 3. Single Pulse 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) Drain Current, ID (A) 100 Operation in This Area by RDS (ON) Drain Current , ID,(A) Power MOSFET 20 10 0 25 50 75 100 125 150 Case Temperature, TC (℃) Transient Thermal Response Curve 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse *Note: 1. ZθJC (t) = 0.88℃/W Max. 2. Duty Factor, D=t1/t2 3. TJ -TC=PDM×ZθJC (t) 10 1 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-087.B 30N06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-087.B