CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage FEATURES: • Low rDS(ON) (140mΩ TYP @ VGS=4.5V) • High voltage (VDS=100V) • Logic level compatibility • 2kV ESD protection SYMBOL VDS VGS 100 UNITS V 20 V Continuous Drain Current (Steady State) ID 2.0 A Maximum Pulsed Drain Current, tp=10μs IDM PD 7.0 A 1.2 W TJ, Tstg ΘJA -55 to +150 °C 104 °C/W Gate-Source Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP VGS=20V, VDS=0 IGSSF, IGSSR IDSS VDS=100V, VGS=0 BVDSS VGS(th) VSD VGS=0, ID=250μA VGS=VDS, ID=250μA MAX 100 UNITS nA 100 nA 2.1 2.5 V 100 1.5 V VGS=0, IS=1.0A VGS=10V, ID=2.0A 1.1 V rDS(ON) 125 300 mΩ rDS(ON) VGS=4.5V, ID=1.0A 140 350 mΩ Crss 48 Ciss VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz Coss Qg(tot) VDS=25V, VGS=0, f=1.0MHz VDS=80V, VGS=5.0V, ID=2.0A Qgs ton VDS=80V, VGS=5.0V, ID=2.0A VDS=80V, VGS=5.0V, ID=2.0A VDD=50V, VGS=5.0V, ID=3.5A toff RG=4.7Ω 50 Qgd pF 550 pF 45 pF 6.0 nC 1.2 nC 3.0 nC 32 ns ns R1 (19-March 2013) CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-89 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER R1 (19-March 2013) w w w. c e n t r a l s e m i . c o m CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R1 (19-March 2013) w w w. c e n t r a l s e m i . c o m