FREESCALE MRF7S21110HR3

Freescale Semiconductor
Technical Data
Document Number: MRF7S21110H
Rev. 1, 7/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7S21110HR3
MRF7S21110HSR3
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1100 mA, Pout = 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 17.3 dB
Drain Efficiency — 32.5%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW
Peak Tuned Output Power
• Pout @ 1 dB Compression Point w 110 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 33 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465- 06, STYLE 1
NI - 780
MRF7S21110HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S21110HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Operating Junction
Temperature (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 109 W CW
Case Temperature 78°C, 33 W CW
RθJC
0.37
0.41
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21110HR3 MRF7S21110HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.7 Adc)
VDS(on)
0.05
0.1
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
7.95
—
pF
Output Equivalent Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
613
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
232
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 33 W Avg., f = 2112.5 MHz and f =
2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
16.5
17.3
19.5
dB
Drain Efficiency
ηD
31
32.5
39
%
PAR
5.7
6.1
6.5
dB
ACPR
- 48
- 38
- 35
dBc
IRL
—
- 15
—
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
MRF7S21110HR3 MRF7S21110HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth @ 90 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
10
—
Gain Flatness in 60 MHz Bandwidth @ Pout = 33 W Avg.
GF
—
0.325
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 110 W CW
Φ
—
0.772
—
°
Delay
—
1.9
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 110 W CW,
f = 2140 MHz, Six Sigma Window
ΔΦ
—
39.7
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.011
—
dB/°C
ΔP1dB
—
0.028
—
dBm/°C
Average Group Delay @ Pout = 110 W CW, f = 2140 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MRF7S21110HR3 MRF7S21110HSR3
RF Device Data
Freescale Semiconductor
3
R2
VBIAS
VSUPPLY
+
R1
C2
+
C3
C4
C5
C6
C8
+
+
C9
C10
+
C11
+
C12
C13
C14
Z6
Z5
Z7
RF
INPUT
Z1
Z2
Z3
Z9
Z11
Z12
C7
Z4
C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
RF
OUTPUT
Z10
DUT
1.280″ x 0.084″ Microstrip
0.856″ x 0.084″ Microstrip
0.240″ x 0.280″ Microstrip
0.420″ x 0.880″ Microstrip
0.950″ x 0.0395″ Microstrip
0.526″ x 0.0940″ Microstrip
0.480″ x 1.050″ Microstrip
Z8
Z9
Z10
Z11
Z12
PCB
0.370″ x 0.201″ Microstrip
0.386″ x 0.084″ Microstrip
0.196″ x 0.242″ Microstrip
0.105″ x 0.084″ Microstrip
1.267″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF7S21110HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21110HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
15 pF, Chip Capacitor
ATC100B150JT500XT
ATC
C2
47 μF, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
C3
8.2 pF, Chip Capacitor
ATC100B8R2CT500XT
ATC
C4, C13
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C5
1 μF, 50 V Tantalum Capacitor
T491C105K050AT
Kemet
C6
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C7
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C8
6.8 pF Chip Capacitor
ATC100B6R8BT500XT
ATC
C9, C10
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C11
0.1 μF Chip Capacitor
C1206C104K5RAC
Kemet
C12
100 μF, 50 V Electrolytic Capacitor
MCR63V477M13X26
Multicomp
C14
470 μF, 63 V Electrolytic Capacitor
MCR50V107M8X11
Multicomp
R1
1 KΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 Ω, 1/3 W Chip Resistor
CRCW121010R0FKEA
Vishay
MRF7S21110HR3 MRF7S21110HSR3
4
RF Device Data
Freescale Semiconductor
R1
C5
C8
R2
C6
C13
C14
C9
C10
C3
C11
C4
C1
CUT OUT AREA
C2
C12
C7
Figure 2. MRF7S21110HR3(HSR3) Test Circuit Component Layout
MRF7S21110HR3 MRF7S21110HSR3
RF Device Data
Freescale Semiconductor
5
17.4
Gps, POWER GAIN (dB)
17.2
17
35
Gps
34
ηD
33
16.8
32
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1100 mA
16.6 Single−Carrier W−CDMA, 3.84 MHz Channel
16.4 Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
16.2
16
0
−0.5
−4
−1
PARC
−1.5
15.8
15.6
2060
0
−8
−12
−16
−2
IRL
2080
2100
2120
2140
2160
2180
−2.5
2220
2200
−20
IRL, INPUT RETURN LOSS (dB)
36
PARC (dB)
17.6
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
50
Gps
16.2
49
ηD
48
16
47
15.8
46
VDD = 28 Vdc, Pout = 70 W (Avg.), IDQ = 1100 mA
15.6
Single−Carrier W−CDMA, 3.84 MHz Channel
15.4 Bandwidth, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
15.2
PARC
15
IRL
14.8
2060 2080 2100 2120 2140 2160 2180
−2
−2.5
−3
0
PARC (dB)
Gps, POWER GAIN (dB)
16.4
−4
−8
−12
−3.5
2200
−4
2220
−16
IRL, INPUT RETURN LOSS (dB)
16.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 33 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 70 Watts Avg.
19
−10
Gps, POWER GAIN (dB)
18
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1650 mA
1375 mA
1100 mA
17
825 mA
16
550 mA
15
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
14
13
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
IDQ = 550 mA
−30
825 mA
−40
1375 mA
350 mA
−50
1100 mA
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
300
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S21110HR3 MRF7S21110HSR3
6
RF Device Data
Freescale Semiconductor
−10
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, IDQ = 1100 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
100
0
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 1100 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−10
−20
−30
IM3−L
IM3−U
−40
IM5−U
IM5−L
IM7−U
−50
IM7−L
−60
10
1
400
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
1
60
Ideal
0
55
−1
50
−2 −1 dB = 31.27 W
45
−3
−2 dB = 45.15 W
Actual
−3 dB = 75 W
−4
VDD = 28 Vdc, IDQ = 1100 mA
f = 2140 MHz, Input Signal PAR = 7.5 dB
−5
20
40
60
40
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
35
30
100
80
Pout, OUTPUT POWER (WATTS)
19
VDD = 28 Vdc, IDQ = 1100 mA, f = 2140 MHz, Single−Carrier
W−CDMA, Input Signal PAR = 7.5 dB, ACPR @
±5 MHz Offset in 3.84 MHz Integrated Bandwidth
−10
18
−20
Uncorrected, Upper and Lower
−30
DPD Corrected
No Memory Correction
−40
−50
−60
38
40
42
44
46
48
Gps
25_C 60
TC = −30_C
17
85_C 50
25_C
16
40
85_C
15
30
14
20
13
DPD Corrected
with Memory Correction
−70
36
70
−30_C
VDD = 28 Vdc
IDQ = 1100 mA
f = 2140 MHz
ηD
12
50
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
1
10
100
ηD, DRAIN EFFICIENCY (%)
0
Gps, POWER GAIN (dB)
ACPR, UPPER AND LOWER RESULTS (dBc)
Figure 9. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
10
0
300
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
MRF7S21110HR3 MRF7S21110HSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
108
18
IDQ = 1100 mA
f = 2140 MHz
MTTF (HOURS)
Gps, POWER GAIN (dB)
17
16
15
107
106
14
28 V
VDD = 24 V
32 V
105
13
0
40
80
120
160
200
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 33 W Avg., and ηD = 32.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.01
0.001
−60
−70
−80
−ACPR in 3.84 MHz
Integrated BW
−90
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−ACPR in 3.84 MHz
Integrated BW
−100
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21110HR3 MRF7S21110HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zload
f = 2220 MHz
f = 2060 MHz
f = 2220 MHz
f = 2060 MHz
Zsource
VDD = 28 Vdc, IDQ = 1100 mA, Pout = 33 W Avg.
f
MHz
Zsource
W
Zload
W
2060
2.2 - j5.1
2.3 - j4.0
2080
2.2 - j5.0
2.2 - j3.9
2100
2.1 - j4.9
2.1 - j3.8
2120
2.1 - j4.8
2.1 - j3.7
2140
2.1 - j4.7
2.0 - j3.5
2160
2.0 - j4.5
2.0 - j3.4
2180
2.0 - j4.4
2.0 - j3.3
2200
2.0 - j4.3
1.8 - j3.1
2220
2.0 - j4.2
1.8 - j3.0
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S21110HR3 MRF7S21110HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
R
(INSULATOR)
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
B
S
(LID)
H
(LID)
M
T A
M
B
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF7S21110HR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
(FLANGE)
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF7S21110HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF7S21110HR3 MRF7S21110HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2007
• Initial Release of Data Sheet
1
July 2008
• Added Input Signal in front of PAR for consistency throughout data sheet p. 2, 6, 7, 8
• Corrected Table 4, Typical Performances, Output Power Variation over Temperature value from 0.276 to
0.028, p. 3
• Updated Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test
Signal, to better represent production test signal, p. 8
MRF7S21110HR3 MRF7S21110HSR3
RF Device Data
Freescale Semiconductor
11
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MRF7S21110HR3 MRF7S21110HSR3
Document Number: MRF7S21110H
Rev. 1, 7/2008
12
RF Device Data
Freescale Semiconductor