Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 44 Watts Avg., Full Frequency Band, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW Output Power • Pout @ 1 dB Compression Point w 150 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2110 - 2170 MHz, 44 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465- 06, STYLE 1 NI - 780 MRF7S21150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S21150HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 147 W CW Case Temperature 75°C, 45 W CW RθJC 0.33 0.37 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007, 2009. All rights reserved. RF Device Data Freescale Semiconductor MRF7S21150HR3 MRF7S21150HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 348 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1350 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1350 mAdc, Measured in Functional Test) VGG(Q) 4.5 5.4 6.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) 0.1 0.15 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.9 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 590 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 320 — pF Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, Pout = 44 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 16.5 17.5 19.5 dB Drain Efficiency ηD 29 31 — % PAR 5.7 6.1 — dB ACPR — - 37 - 35 dBc IRL — - 15 -9 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S21150HR3 MRF7S21150HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, 2110 - 2170 MHz Bandwidth Video Bandwidth @ 120 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) VBW MHz — 10 — Gain Flatness in 60 MHz Bandwidth @ Pout = 44 W Avg. GF — 0.418 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 150 W CW Φ — 36.5 — ° Delay — 2.82 — ns Part - to - Part Insertion Phase Variation @ Pout = 150 W CW, f = 2140 MHz, Six Sigma Window ΔΦ — 1.45 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.013 — dB/°C ΔP1dB — 0.007 — dBm/°C Average Group Delay @ Pout = 150 W CW, f = 2140 MHz Output Power Variation over Temperature ( - 30°C to +85°C) MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 3 R1 VBIAS VSUPPLY Z28 + R2 C6 Z30 C9 C8 C11 Z27 Z26 Z29 R3 Z25 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z9 C1 Z11 Z12 Z13 Z15 Z16 Z17 Z18 Z19 Z20 C12 C5 C2 RF Z21 Z22 Z23 Z24 OUTPUT DUT C4 Z31 Z14 C3 Z32 R4 C10 Z1 Z2 Z3 Z4* Z5* Z6 Z7 Z8 Z9 Z10 Z11 0.980″ x 0.138″ Microstrip 0.461″ x 0.066″ Microstrip 0.534″ x 0.458″ Microstrip 0.138″ x 0.126″ Microstrip 0.536″ x 0.126″ Microstrip 0.147″ x 0.126″ Microstrip 0.060″ x 0.513″ Microstrip 0.151″ x 0.630″ Microstrip 0.112″ x 0.630″ Microstrip 0.337″ x 0.957″ Microstrip 0.176″ x 0.957″ Microstrip Z12 Z13 Z14 Z15* Z16* Z17* Z18 Z19 Z20, Z21 Z22 Z23 C7 0.178″ x 0.067″ Microstrip 0.039″ x 0.095″ Microstrip 0.079″ x 0.060″ Microstrip 0.168″ x 0.095″ Microstrip 0.113″ x 0.095″ Microstrip 0.128″ x 0.095″ Microstrip 0.079″ x 0.215″ Microstrip 0.020″ x 0.095″ Microstrip 0.070″ x 0.215″ Microstrip 0.392″ x 0.067″ Microstrip 0.370″ x 0.089″ Microstrip Z24 Z25 Z26 Z27 Z28 Z29, Z31 Z30, Z32 PCB 0.096″ x 0.138″ Microstrip 0.335″ x 0.066″ Microstrip 0.069″ x 0.080″ Microstrip 0.466″ x 0.040″ Microstrip R = 0.526″ α = 60° Microstrip Butterfly 0.825″ x 0.066″ Microstrip R = 0.526″ α = 60° Microstrip Butterfly Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning Figure 1. MRF7S21150HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21150HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 0.7 pF Chip Capacitor ATC100B0R7BT500XT ATC C2, C3 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4, C12 0.2 pF Chip Capacitors ATC100B0R2BT500XT ATC C5 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C6, C7, C8 10 μF Chip Capacitors C5750X5R1H106M TDK C9, C10 100 nF Chip Capacitors C1206C104K2RAC Kemet C11 220 μF, 63 V Electrolytic Capacitor, Axial 222212018221 Vishay BC Components R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay R4 2.2 Ω, 1/4 W Chip Resistor CRCW12062R20FKEA Vishay MRF7S21150HR3 MRF7S21150HSR3 4 RF Device Data Freescale Semiconductor VGS C8 VDD C6 R1 C9 R2 R3 MRF7S21150H/S Rev. 7 C1 CUT OUT AREA C4 C11 C2 C12 C5 C3 R4 C10 C7 Figure 2. MRF7S21150HR3(HSR3) Test Circuit Component Layout MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 5 17.5 Gps 32 Gps, POWER GAIN (dB) 17 31 16.5 30 VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1350 mA Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 16 15.5 29 15 0 −4 −0.5 −8 −1 14.5 PARC 14 13.5 −1.5 2080 2100 2120 2140 2160 2180 −2.5 2220 2200 −16 −20 −2 IRL 13 2060 −12 −24 IRL, INPUT RETURN LOSS (dB) 33 ηD PARC (dB) 18 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 42 17 Gps, POWER GAIN (dB) 41 ηD 16.5 40 39 Gps 16 38 VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1350 mA Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 15.5 15 37 −3 14.5 14 −5 −2.5 PARC (dB) 17.5 PARC 13.5 13 2060 −3.5 2080 2100 2120 2140 2160 2180 −4.5 2220 2200 −15 −20 −4 IRL −10 −25 IRL, INPUT RETURN LOSS (dB) 18 ηD, DRAIN EFFICIENCY (%) Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 44 Watts Avg. f, FREQUENCY (MHz) Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 75 Watts Avg. 19 −10 18 1690 mA 17 1350 mA 16 1010 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) Gps, POWER GAIN (dB) IDQ = 2020 mA 15 675 mA 14 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing 13 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 −30 IDQ = 675 mA 2020 mA −40 1010 mA 1690 mA −50 1350 mA −60 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 300 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF7S21150HR3 MRF7S21150HSR3 6 RF Device Data Freescale Semiconductor −10 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, IDQ = 1350 mA f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −20 −30 −40 −50 3rd Order −60 5th Order 7th Order −70 1 10 100 0 VDD = 28 Vdc, Pout = 120 W (PEP), IDQ = 1350 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −10 −20 IM3−U −30 IM3−L IM5−U −40 IM5−L −50 IM7−U IM7−L −60 1 300 10 80 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 45 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 1 Ideal 0 40 35 −1 −1 dB = 39.58 W −2 30 −2 dB = 54.29 W −3 25 Actual −3 dB = 72.73 W VDD = 28 Vdc, IDQ = 1350 mA f = 2140 MHz, Input Signal PAR = 7.5 dB −4 20 −5 20 30 40 50 60 ηD, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 70 15 80 Pout, OUTPUT POWER (WATTS) 19 VDD = 28 Vdc, IDQ = 1350 mA, f = 2140 MHz Single−Carrier W−CDMA, Input Signal PAR = 7.5 dB, ACPR @ ±5 MHz Offset in 3.84 MHz, Integrated Bandwidth −35 −40 Uncorrected, Upper and Lower −45 DPD Corrected No Memory Correction −50 −55 −60 Gps 18 TC = −30_C 25_C 85_C 50 25_C 17 40 85_C 16 30 15 20 14 DPD Corrected with Memory Correction −65 38 60 −30_C VDD = 28 Vdc IDQ = 1350 mA f = 2140 MHz ηD 10 13 40 42 44 46 48 50 Pout, OUTPUT POWER (dBm) Figure 10. Digital Predistortion Correction versus ACPR and Output Power 1 10 100 ηD, DRAIN EFFICIENCY (%) −30 Gps, POWER GAIN (dB) ACPR, UPPER AND LOWER RESULTS (dBc) Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power 0 300 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 108 18 17 MTTF (HOURS) Gps, POWER GAIN (dB) IDQ = 1350 mA f = 2140 MHz 16 107 106 15 VDD = 24 V 14 0 100 28 V 32 V 105 200 300 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain versus Output Power This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 44 W Avg., and ηD = 31%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature W - CDMA TEST SIGNAL 100 −10 3.84 MHz Channel BW −20 10 1 −40 Input Signal −50 0.1 (dB) PROBABILITY (%) −30 0.01 −70 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 2 4 6 −60 −80 −ACPR in 3.84 MHz Integrated BW −90 8 10 PEAK−TO−AVERAGE (dB) Figure 14. CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal −ACPR in 3.84 MHz Integrated BW −100 −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 15. Single - Carrier W - CDMA Spectrum MRF7S21150HR3 MRF7S21150HSR3 8 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 2220 MHz Zload Zsource f = 2060 MHz f = 2060 MHz f = 2220 MHz VDD = 28 Vdc, IDQ = 1350 mA, Pout = 44 W Avg. f MHz Zsource W Zload W 2060 2.72 - j5.08 1.14 - j2.89 2080 3.10 - j5.17 1.11 - j2.75 2100 3.43 - j5.39 1.08 - j2.62 2120 3.66 - j5.74 1.04 - j2.50 2140 3.72 - j6.17 1.00 - j2.39 2160 3.59 - j6.59 0.96 - j2.28 2180 3.33 - j6.91 0.93 - j2.17 2200 2.98 - j7.10 0.89 - j2.05 2220 2.62 - j7.17 0.86 - j1.93 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 9 61 60 59 58 57 62 61 Ideal P6dB = 54.68 dBm (294 W) P6dB = 55.47 dBm (352 W) Ideal 60 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P3dB = 54.05 dBm (254 W) 56 55 54 53 P1dB = 53.1 dBm (200 W) Actual 52 51 50 VDD = 28 Vdc, IDQ = 1350 mA, Pulsed CW 12 μsec(on), 10% Duty Cycle, f = 2140 MHz 32 33 34 35 36 37 38 39 40 41 42 P3dB = 54.94 dBm (311 W) P1dB = 54.1 dBm (257 W) 56 55 Actual 54 53 52 VDD = 32 Vdc, IDQ = 1350 mA, Pulsed CW 12 μsec(on), 10% Duty Cycle, f = 2140 MHz 51 50 49 31 59 58 57 43 32 33 34 35 36 37 38 39 40 41 42 43 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 32 V Test Impedances per Compression Level Test Impedances per Compression Level P3dB Zsource Ω Zload Ω 4.66 - j8.05 0.53 - j2.26 Figure 17. Pulsed CW Output Power versus Input Power @ 28 V P3dB Zsource Ω Zload Ω 4.66 - j8.05 0.64 - j2.17 44 Figure 18. Pulsed CW Output Power versus Input Power @ 32 V MRF7S21150HR3 MRF7S21150HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A M B M ccc M T A M M aaa M T A M (LID) B S (LID) ccc H R (INSULATOR) M T A M B M (INSULATOR) B M C F E A T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF7S21150HR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF7S21150HSR3 MRF7S21150HR3 MRF7S21150HSR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2007 • Initial Release of Data Sheet 1 Apr. 2009 • Corrected ESD structures to reflect current testing results. Changed HBM from 3A to 1C, p. 2 • Updated Fig. 14, CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal, to better represent production test signal, p. 8 MRF7S21150HR3 MRF7S21150HSR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007, 2009. All rights reserved. MRF7S21150HR3 MRF7S21150HSR3 Document Number: RF Device Data MRF7S21150H Rev. 1, 4/2009 Freescale Semiconductor 13