< HVIC > M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81740FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications. PIN CONFIGURATION (TOP VIEW) FEATURES ●Floating Supply Voltage ････････600v ●Output Current ････････ ±3.25A (Typ.) ●Two Input Type ････････IN/SD ●Internally Set Deadtime ●3.3v And 5v Input Logic Compartible. ●Half Bridge Driver ●Undervoltage Lockout ●SOP-8 Package 1. IN 8.V B 2. SD 7.HO 3. GND 6.V S 4. LO 5.Vcc Outline:8P2S (Pb Free) APPLICATIONS MOSFET and IGBT gate driver for Lighting, refrigerator, air-conditioner, washing machine, inverter and general purpose. BLOCK DIAGRAM HV LEVEL SHIFT VREG IN INTER LOCK VREG/VCC LEVEL SHIFT 1 UV DETECT FILTER 7 HO 6 VS 5 VCC 4 LO 3 GND RQ R S UV DETECT FILTER 5V 2 VB PULSE GEN DEAD TIME SD 8 VREG/VCC LEVEL SHIFT DELAY Publication Date :April 2012 1 <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER TYPICAL CONNECTION ( General Purpose) up to 600V Vcc To Controller VCC VB IN HO SD VS COM LO To Load Publication Date : April 2012 2 <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER TYPICAL CONNECTION ( In Unipolar Modulation PWM Application) up to 600V IC1 IC2 SD Vs HO Ua Load LO Ub Vs LO SEQUENCE ( SD is used as low side input terminal) IC1_IN IC1_SD IC2_IN IC2_SD IC1_HO IC1_LO IC2_HO IC2_LO Ua - Ub Publication Date : April 2012 3 M81740FP IN M81740FP HO IN SD <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise specified) Symbol VB VS VBS VHO VCC VLO Parameter Test conditions VIN High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage (IN & SD) dVS/dt Pd Kθ Rth(j-c) Tj Topr Tstg TL Allowable Offset Voltage Transient Package Power Dissipation Linear Derating Factor Junction-Case Thermal Resistance Junction Temperature Operation Temperature Storage Temperature Solder Heatproof VBS=VB-VS Ta= 25 °C ,On Board Ta> 25 °C ,On Board RoHS Correspondence Ratings Unit -0.3 ~ 624 VB-24 ~ VB+0.3 -0.3 ~ 24 VS-0.3 ~ VB+0.3 -0.3 ~ 24 -0.3 ~ Vcc+0.3 V V V V V V -0.3 ~ Vcc+0.3 V ±50 0.6 4.8 50 -40 ~ +150 -40 ~ +125 -50 ~ +150 255:10s,max 260 V/ns W mW/°C °C/W ℃ ℃ ℃ ℃ RECOMMENDED OPERATING CONDITIONS Symbol VB VS VBS VHO VCC VLO VIN Parameter Test conditions High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Supply Voltage High Side Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage (IN & SD) VB>10V VBS=VB-VS Min. VS+10 -5 10 VS 10 0 0 * For proper operation, the device should be used within the recommended conditions Package Power Dissipation Pd (W) THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 Temperature Ta(oC) Publication Date : April 2012 4 Limits Typ. — — — — — — — Max. VS+20 500 20 VB 20 VCC 5 Unit V V V V V V V <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER ELECTRICAL CHARACTERISTICS (Ta=25°C,VCC=VBS(=VB-VS)=15V, unless otherwise specified) Symbol Min. — — 0.2 13.8 — — 0.8 — 0.8 — — 7.0 0.3 — 7.0 0.3 — Limits Typ.* — 0.2 0.6 14.4 — 2.2 1.6 2.2 1.6 25 — 8.4 0.5 7.5 8.4 0.5 7.5 Max. 1.0 0.5 1.0 — 0.2 2.7 — 2.7 — 60 5 9.8 — — 9.8 — — VO = 0V, PW < 10s 2.3 3.25 — A VO = 15V, PW < 10s 2.3 3.25 — A — — 900 ns — — 400 ns — — — — — — — — 0 0 — — — — 270 90 40 60 35 60 35 ns ns ns ns ns ns ns 280 400 520 ns — 0 50 ns Parameter IFS IBS ICC VOH VOL VIH(IN) VIL(IN) VIH(SD) VIL(SD) IIH IIL VBSuvr VBSuvh tVBSuv VCCuvr VCCuvh tVCCuv Test conditions Floating Supply Leakage Current VBS Standby Current VCC Standby Current High Level Output Voltage Low Level Output Voltage High Level Input Threshold Voltage (VIN) Low Level Input Threshold Voltage (VIN) High Level Input Threshold Voltage (VSD) Low Level Input Threshold Voltage (VSD) High Level Input Bias Current Low Level Input Bias Current VBS Supply UV Reset Voltage VBS Supply UV Hysteresis Voltage VBS Supply UV Filter Time VCC Supply UV Reset Voltage VCC Supply UV Hysteresis Voltage VCC Supply UV Filter Time Output High Level Short Circuit Pulsed Current Output Low Level Short Circuit Pulsed Current IOH IOL tdLH Turn-On Propagation Delay tdHL Turn-Off Propagation Delay VB = VS = 600V IN = 0V or 5V IN = 0V or 5V IO = 0mA, LO, HO IO = 20mA, LO, HO VIN = 5V ,VSD=0V VIN = 0V ,VSD=5V CL = 1000pF between HO-VS, LO-GND VIN = 0～5V CL = 1000pF between HO-VS , LO-GND VIN = 0～5V Shut Down Propagation Delay Turn-On Propagation Delay Matching Turn-Off Propagation Delay Matching High Side Turn-On Rise Time High Side Turn-Off Fall Time Low Side Turn-On Rise Time Low Side Turn-Off Fall Time Dead Time LO Turn-Off to HO Turn-On & tDEAD HO Turn-Off to LO Turn-On ⊿ｔDEAD Dead Time Matching ｔSD ⊿tdLH ⊿tdHL trH tfH trL tfL |tdLH(HO)-tdLH(LO)| |tdHL(HO)-tdHL(LO)| CL = 1000pF between HO-VS CL = 1000pF between HO-VS CL = 1000pF between LO-GND CL = 1000pF between LO-GND CL = 1000pF between HO-VS, LO-GND VIN = 0～5V |tDEAD(LO-HO)-tDEAD(HO-LO)| * Typ. is not specified. INPUT/OUTPUT TIMING DIAGRAM IN 50% SD 50% trH tfL tfH 90% trL 90% 10% 10% tSD 90% HO LO HO 90% 90% LO tdHL(LO) tdLH(HO) 10% tDEAD (LO-HO) 10% tDEAD (HO-LO) tdHL(HO) tdLH(LO) Publication Date : April 2012 5 50% Unit A mA mA V V V V V V A A V V s V V s <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER FUNCTION TIMING DIAGRAM 1 IN SD HO LO FUNCTION TIMING DIAGRAM 2 UVreset Vcc UVreset UV trip UV trip UV reset voltage UV trip voltage UV trip UVreset UVreset UV reset voltage UV trip voltage VB UV reset voltage UV trip voltage IN tVBSuv tVccuv HO tVccuv LO Publication Date : April 2012 6 <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER 1. HO has positive logic with reference to IN. LO has negative logic with reference to IN. 2. Output signal (HO) is triggered by the edge of input signal. 3. Logic During UV(VCC, VBS) Error Error Signal UV error (VCC) HO LO HO is locked at “L” level as long as UV error for VCC is detected. After VCC exceeds VCC UV reset level, the lock for HO is removed and responds to IN signal. LO is locked at “L” level as long as UV error for VCC is detected. After VCC exceeds VCC UV reset level, the lock for LO is removed and responds to IN signal. (VCC>VBS) UV error (VBS) HO is locked at “L” level as long as UV error for VBS is detected. After VBS UV reset level, the lock for HO is removed following an “L” state of the IN signal, and then HO responds to the input. LO is independent of VBS to respond to IN. *IF UV error for VCC is detected when HO is in “H” level and the falling speed of VCC is exceeds 0.03V/μs, the off signal for HO might not be transmitted from low side to high side and then HO stays “H”. 4. Supply start up sequence Please start up VCC supply and VBS supply in that order, and, please shut down VBS supply and VCC supply in that order. Please start up VCC supply and VBS supply with gentle slope. If you start up supply with sharp slope, there is some possibility that HO or LO outputs “H” for a moment. If VCC supply is less than 10V(outside of RECOMMENDED OPERATING CONDITIONS), there is some possibility that output does not change in response to input. Please evaluate carefully about supply start up or restart after shut down in your application systems. Publication Date : April 2012 7 <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER PACKAGE OUTLINE Publication Date : April 2012 8 <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER Main Revision for this Edition Revision No. Date Pages Points A 2012.01.26 - New B 2012.04.10 - “PRELIMINARY” was deleted. “Notice: This is not a final specification. Some parametric limits are subject to change.” was deleted. 4 “Storage Temperature” was changed to “-50 ~ +150 ℃”. 5 Min. and Max. Limits of tDEAD was added. Publication Date : April 2012 9 <HVIC> M81740FP HIGH VOLTAGE HALF BRIDGE DRIVER Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any thirdparty’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2012 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : April 2012 10