MITSUBISHI M81719FP

MITSUBISHI SEMICONDUCTORS <HVIC>
M81719FP
RY
INA
ELIM
on. ange.
ificati
h
l spec ct to c
a finaare subje
t
o
n
is
its
is
m
h
li
T
e:
tric
Notice parame
Som
PR
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81719FP is high voltage Power MOSFET and IGBT module driver for half bridge applications.
PIN CONFIGURATION (TOP VIEW)
FEATURES
¡FLOATING SUPPLY VOLTAGE ................................. 600V
¡OUTPUT CURRENT .............................. +120mA/–250mA
¡HALF BRIDGE DRIVER
¡UNDERVOLTAGE LOCKOUT
¡SOP-8 PACKAGE
APPLICATIONS
MOSFET and IGBT module inverter driver for Automotive,
PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC-servomotor and general purpose.
1. VCC
8. VB
2. HIN
7. HO
3. LIN
6. VS
4. GND
5. LO
Outline:8P2S
BLOCK DIAGRAM
HV
LEVEL
SHIFT
VREG
HIN
2
FILTER
VREG/VCC
LEVEL
SHIFT
3
FILTER
VREG/VCC
LEVEL
SHIFT
VB
7
HO
6
VS
1
VCC
5
LO
4
GND
RQ
INTER
LOCK
R
S
PULSE
GEN
UV DETECT
FILTER
LIN
8
UV DETECT
FILTER
DELAY
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
RY
INA
ELIM
M81719FP
on. ange.
ificati
h
l spec ct to c
a finaare subje
t
o
n
is
its
is
m
h
li
T
e:
tric
Notice parame
Som
PR
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
Symbol
VB
VS
VBS
VHO
VCC
VLO
VIN
Pd
Kq
Rth(j-c)
Tj
Topr
Tstg
Parameter
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
Test conditions
Ratings
–0.5 ~ 624
Unit
V
V
V
VB–24 ~ VB+0.5
–0.5 ~ 24
VS–0.5 ~ VB+0.5
VBS = VB–VS
V
V
V
V
–0.5 ~ 24
–0.5 ~ VCC+0.5
–0.5 ~ VCC+0.5
0.6
6.0
HIN, LIN
Ta = 25°C, On Board
Ta > 25°C, On Board
W
mW/°C
°C/W
°C
°C
50
–20 ~ 125
–20 ~ 100
–40 ~ 125
°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Test conditions
VB
High Side Floating Supply Absolute Voltage
VS
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
VBS
VHO
VCC
VLO
VIN
10
VS
VBS = VB–VS
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Min.
VS+10
0
HIN, LIN
Limits
Typ.
—
—
—
10
0
—
—
—
0
—
Max.
VS+20
500
Unit
V
V
20
VB
V
V
20
VCC
7
V
V
V
* For proper operation, the device should be used within the recommended conditions.
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
Package Power Dissipation Pd (W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75
100
125
150
Temperature Ta (°C)
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
RY
INA
ELIM
M81719FP
on. ange.
ificati
h
l spec ct to c
a finaare subje
t
o
n
is
its
is
m
h
li
T
e:
tric
Notice parame
Som
PR
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified)
Symbol
Parameter
Test conditions
Limits
Typ.*
—
Max.
1.0
0.2
0.5
mA
Unit
IFS
Floating Supply Leakage Current
VB = VS = 600V
Min.
—
IBS
VBS Standby Current
HIN = LIN = 0V
—
ICC
VCC Standby Current
HIN = LIN = 0V
0.2
0.6
1.0
mA
VOH
High Level Output Voltage
IO = –20mA, LO, HO
13.6
14.2
—
V
VOL
Low Level Output Voltage
IO = 20mA, LO, HO
—
0.3
0.6
V
VIH
High Level Input Threshold Voltage
HIN, LIN
2.7
—
—
V
VIL
Low Level Input Threshold Voltage
HIN, LIN
—
—
0.8
V
IIH
High Level Input Bias Current
VIN = 5V
—
5
20
µA
IIL
Low Level Input Bias Current
VIN = 0V
—
—
2
µA
VBSuvr
VBS Supply UV Reset Voltage
8.0
8.9
9.8
V
VBSuvt
VBS Supply UV Trip Voltage
7.4
8.2
9.0
V
VBSuvh
VBS Supply UV Hysteresis Voltage
0.4
0.6
—
V
tVBSuv
VBS Supply UV Filter Time
—
7.5
—
µs
VCCuvr
VCC Supply UV Reset Voltage
8.0
8.9
9.8
V
VCCuvt
VCC Supply UV Trip Voltage
7.4
8.2
9.0
V
VCCuvh
VCC Supply UV Hysteresis Voltage
0.4
0.6
—
V
tVCCuv
VCC Supply UV Filter Time
—
7.5
—
µs
IOH
Output High Level Short Circuit Pulsed Current
VO = 0V, VIN = 5V, PW < 10µs**
120
200
—
mA
IOL
Output Low Level Short Circuit Pulsed Current
VO = 15V, VIN = 0V, PW < 10µs**
250
350
—
mA
ROH
Output High Level On Resistance
IO = –20mA, ROH = (VOH–VO)/IO
—
40
70
Ω
ROL
Output Low Level On Resistance
IO = 20mA, ROL = VO/IO
—
15
30
Ω
tdLH(HO)
High Side Turn-On Propagation Delay
CL = 1000pF between HO-VS
—
250
350
ns
tdHL(HO)
High Side Turn-Off Propagation Delay
CL = 1000pF between HO-VS
—
250
350
ns
trH
High Side Turn-On Rise Time
CL = 1000pF between HO-VS
—
130
220
ns
tfH
High Side Turn-Off Fall Time
CL = 1000pF between HO-VS
—
50
80
ns
tdLH(LO)
Low Side Turn-On Propagation Delay
CL = 1000pF between LO-GND
—
250
350
ns
tdHL(LO)
Low Side Turn-Off Propagation Delay
CL = 1000pF between LO-GND
—
250
350
ns
trL
Low Side Turn-On Rise Time
CL = 1000pF between LO-GND
—
130
220
ns
tfL
Low Side Turn-Off Fall Time
CL = 1000pF between LO-GND
—
50
80
ns
∆tdLH
Delay Matching, High Side and Low Side Turn-On
|tdLH(HO)–tdLH(LO)|
—
0
30
ns
∆tdHL
Delay Matching, High Side and Low Side Turn-Off
|tdHL(HO)–tdHL(LO)|
—
0
30
ns
CONVEX PULSE
60
80
100
ns
CONCAVE PULSE
110
150
190
ns
CONVEX PULSE
60
80
100
ns
CONCAVE PULSE
110
150
190
ns
—
—
100
ns
tinon
Input Filter Time (ON)
tinoff
Input Filter Time (OFF)
∆PWIO
I/O Pulse Width Difference
|PW(IN)–PW(OUT)|
µA
* Typ. is not specified.
** It is recommended not to input short pulse continuously.
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
RY
INA
ELIM
M81719FP
on. ange.
ificati
h
l spec ct to c
a finaare subje
t
o
n
is
its
is
m
h
li
T
e:
tric
Notice parame
Som
PR
HIGH VOLTAGE HALF BRIDGE DRIVER
TIMING REQUIREMENT
IN
50%
tdLH
50%
tr
tdHL
90%
OUT
tf
90%
10%
10%
FUNCTION TABLE (X: H or L)
HIN
LIN
VBS UV
VCC UV
HO
LO
L
L
H
H
X
X
L
H
L
H
L
H
L
H
X
X
H
H
H
H
L
L
H
H
H
H
H
H
H
H
L
L
L
L
H
H
L
L
L
L
L
H
L
H
L
H
L
L
Behavioral state
LO = HO = Low
LO = High
HO = High
LO = HO = High
HO = Low, VBS UV tripped
LO = High, VBS UV tripped
LO = Low, VCC UV tripped
HO = LO = Low, VCC UV tripped
Note : “L” state of VBS UV, VCC UV means that UV trip voltage.
TIMING DIAGRAM
1.Input/Output Timing Diagram
HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.)
Because there is not interlock circuit, in the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO)
become “H”.
HIN
LIN
HO
LO
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
RY
INA
ELIM
M81719FP
on. ange.
ificati
h
l spec ct to c
a finaare subje
t
o
n
is
its
is
m
h
li
T
e:
tric
Notice parame
Som
PR
HIGH VOLTAGE HALF BRIDGE DRIVER
2.VCC (VBS) Supply Under Voltage Lockout Timing Diagram
When VCC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output
signal becomes “L”. And then, when VCC Supply Voltage is higher than UV Reset Voltage, output signal LO becomes
“H”.
VCCuvh
VCC
VCCuvr
VCCuvt
tVCCuv
LO
LIN
When VCC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output
signal becomes “L”. And then, when VCC Supply Voltage is higher than UV Reset Voltage, input signal (LIN) is L; output
signal HO becomes “H”.
VBS(H)
LIN(L)
VCCuvh
VCC
VCCuvr
VCCuvt
tVCCuv
HO
HIN
When VBS Supply Voltage keeps lower UV Trip Voltage (VBSuvt = VBSuvr–VBSuvh) for VBS Supply UV Filter Time, output
signal becomes “L”. And then, VBS Supply Voltage is higher than UV Reset Voltage, output signal HO keeps “L” until
next input signal HIN is “H”.
VBSuvh
VBS
VBSuvr
VBSuvt
tVBSuv
HO
HIN
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
RY
INA
ELIM
M81719FP
on. ange.
ificati
h
l spec ct to c
a finaare subje
t
o
n
is
its
is
m
h
li
T
e:
tric
Notice parame
Som
PR
HIGH VOLTAGE HALF BRIDGE DRIVER
3.Allowable Supply Voltage Transient
It is recommended that supplying VCC firstly and supplying VBS secondly. In the case of shutting off supply voltage, shutting off VBS firstly and shutting off VCC secondly. At the time of starting VCC and VBS, power supply should be increased
slowly. If it is increased rapidly, output signal (HO or LO) may be “H”.
Consideration
As for this product, the terminal of low voltage part and high-voltage part is very clear (The Fifth: LO, The Sixth: VS).
Therefore, pin insulation space distance should be taken enough.
PACKAGE OUTLINE
e
8
b2
E
Recommended Mount Pad
1
Symbol
F
4
A
D
G
b
x
M
A2
e
A1
y
L
L1
HE
e1
I2
5
c
z
Z1
Detail G
Detail F
A
A1
A2
b
c
D
E
e
HE
L
L1
z
Z1
x
y
b2
e1
I2
Dimension in Millimeters
Min
Nom
Max
–
–
1.9
0.05
–
–
–
1.5
–
0.35
0.4
0.5
0.13
0.15
0.2
4.8
5.0
5.2
4.2
4.4
4.6
–
1.27
–
5.9
6.2
6.5
0.2
0.4
0.6
–
0.9
–
–
0.595
–
–
–
0.745
–
–
0.25
–
–
0.1
0°
–
10°
–
0.76
–
–
5.72
–
1.27
–
–
Mar. 2006