Si7489DP Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET PowerPAK SO-8 S 6.15 mm S 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7489DP-T1-E3 (Lead (Pb)-free) Si7489DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Limit - 100 ± 20 IDM TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)d, e V - 28a - 24.9a - 7.8b, c - 6.2b, c - 40 ID Continuous Source-Drain Diode Current Unit - 28a - 4.3b, c - 35 61 83 53 5.2b, c 3.3b, c - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Parameter b, f t ≤ 10 s Steady State Symbol RthJA RthJC Typical 19 1.2 Maximum 24 1.5 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 °C/W. Document Number: 73436 S09-0271-Rev. C, 16-Feb-09 www.vishay.com 1 Si7489DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 5.5 -1 -3 V ± 100 nA VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≥ 5 V, VGS = - 10 V RDS(on) V - 113 - 40 µA A VGS = - 10 V, ID = - 7.8 A 0.033 0.041 VGS = - 4.5 V, ID = - 7.3 A 0.038 0.047 VDS = - 15 V, ID = - 7.8 A 38 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 4600 VDS = - 50 V, VGS = 0 V, f = 1 MHz 230 VDS = - 50 V, VGS = - 10 V, ID = - 7.8 A 106 160 54 81 175 VDS = - 50 V, VGS = - 4.5 V, ID = - 7.8 A VDD = - 50 V, RL = 8.1 Ω ID ≅ - 6.2 A, VGEN = - 10 V, Rg = 1 Ω Turn-On Delay Time 20 30 165 tf 100 150 td(on) 42 65 160 240 100 150 100 150 VDD = - 50 V, RL = 8.1 Ω ID ≅ - 6.2 A, VGEN = - 4.5 V, Rg = 1 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 25 110 td(off) Fall Time nC Ω 4 15 tr Rise Time Turn-Off Delay Time 14 26 f = 1 MHz td(on) Turn-On Delay Time pF ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage TC = 25 °C IS - 28 ISM - 40 IS = - 6.2 A VSD - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 60 90 ns Body Diode Reverse Recovery Charge Qrr 150 225 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C 46 14 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73436 S09-0271-Rev. C, 16-Feb-09 Si7489DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 40 16 VGS = 10 thru 4 V 30 I D - Drain Current (A) I D - Drain Current (A) 35 25 20 15 10 3V 12 8 TA = 125 °C 4 25 °C 5 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 - 55 °C 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.042 3.0 3.5 7000 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 6000 0.040 VGS = 4.5 V 0.038 0.036 VGS = 10 V 5000 4000 3000 2000 Coss 0.034 1000 0.032 Crss 0 0 5 10 15 20 25 30 35 40 0 10 ID - Drain Current (A) 20 40 50 60 70 80 125 150 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.3 10 ID = 7.8 A 2.0 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 30 VDS = 50 V 6 VDS = 80 V 4 2 ID = 7.8 A 1.7 VGS = 10 V, 4.5 V 1.4 1.1 0.8 0 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73436 S09-0271-Rev. C, 16-Feb-09 100 120 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7489DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 R DS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 1 ID = 7.8 A 0.07 TA = 125 °C 0.06 0.05 0.04 TA = 25 °C 0.03 0.02 0.00 0.2 0.4 0.6 0.8 1.0 2 1.2 3 4 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 35 2.2 30 ID = 250 µA 7 8 9 10 25 1.8 Power (W) VGS(th) (V) 6 On-Resistance vs. Gate-to-Source Voltage 2.4 2.0 5 VGS - Gate-to-Source Voltage (V) 1.6 20 15 1.4 10 1.2 5 1.0 0.8 - 50 - 25 0 25 50 75 100 125 150 0 0.01 175 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 10 Limited by RDS(on)* 100 µs I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 0.1 10 s DC TA = 25 °C Single Pulse 0.01 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73436 S09-0271-Rev. C, 16-Feb-09 Si7489DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 35 100 30 80 Package Limited Power (W) ID - Drain Current (A) 25 20 15 60 40 10 20 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 IC - Peak Avalanche Current (A) 100 10 TA = L · IA BV - V DD 1 0.000001 0.00001 0.0001 0.001 0.01 TA - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73436 S09-0271-Rev. C, 16-Feb-09 www.vishay.com 5 Si7489DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-2 10-1 1 10 Square Wave Pulse Duration (s) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73436. www.vishay.com 6 Document Number: 73436 S09-0271-Rev. C, 16-Feb-09 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8, (Single/Dual) L H E2 K E4 θ D4 W 1 M 1 Z 2 D5 D2 e 2 D1 D 2 D 3 4 θ 4 b 3 L1 E3 θ A1 Backside View of Single Pad H K E2 E4 L 1 D1 D5 2 D2 Detail Z K1 2 E1 E D3 (2x) D4 c A θ 3 4 Notes 1. Inch will govern. 2 Dimensions exclusive of mold gate burrs. 3. Dimensions exclusive of mold flash and cutting burrs. E3 Backside View of Dual Pad MILLIMETERS DIM. MIN. A 0.97 A1 b 0.33 c 0.23 D 5.05 D1 4.80 D2 3.56 D3 1.32 D4 D5 E 6.05 E1 5.79 E2 (for AL product) 3.30 E2 (for other product) 3.48 E3 3.68 E4 (for AL product) E4 (for other product) e K (for AL product) K (for other product) K1 0.56 H 0.51 L 0.51 L1 0.06 0° W 0.15 M ECN: C13-0702-Rev. K, 20-May-13 DWG: 5881 Revison: 20-May-13 b D2 INCHES NOM. MAX. MIN. NOM. MAX. 1.04 0.41 0.28 5.15 4.90 3.76 1.50 0.57 typ. 3.98 typ. 6.15 5.89 3.48 3.66 3.78 0.58 typ. 0.75 typ. 1.27 BSC 1.45 typ. 1.27 typ. 0.61 0.61 0.13 0.25 0.125 typ. 1.12 0.05 0.51 0.33 5.26 5.00 3.91 1.68 0.038 0 0.013 0.009 0.199 0.189 0.140 0.052 0.044 0.002 0.020 0.013 0.207 0.197 0.154 0.066 6.25 5.99 3.66 3.84 3.91 0.238 0.228 0.130 0.137 0.145 0.71 0.71 0.20 12° 0.36 0.022 0.020 0.020 0.002 0° 0.006 0.041 0.016 0.011 0.203 0.193 0.148 0.059 0.0225 typ. 0.157 typ. 0.242 0.232 0.137 0.144 0.149 0.023 typ. 0.030 typ. 0.050 BSC 0.057 typ. 0.050 typ. 0.024 0.024 0.005 0.010 0.005 typ. 1 0.246 0.236 0.144 0.151 0.154 0.028 0.028 0.008 12° 0.014 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single 0.260 (6.61) 0.150 (3.81) 0.050 0.174 (4.42) 0.154 (1.27) 0.026 (0.66) (3.91) 0.024 (0.61) 0.050 0.032 0.040 (1.27) (0.82) (1.02) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72599 Revision: 21-Jan-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000