VISHAY SI7489DP_13

Si7489DP
Vishay Siliconix
P-Channel 100-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
0.041 at VGS = - 10 V
- 28
0.047 at VGS = - 4.5 V
- 28
VDS (V)
- 100
Qg (Typ.)
54 nC
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
PowerPAK SO-8
S
6.15 mm
S
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
Bottom View
D
Ordering Information: Si7489DP-T1-E3 (Lead (Pb)-free)
Si7489DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Limit
- 100
± 20
IDM
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
V
- 28a
- 24.9a
- 7.8b, c
- 6.2b, c
- 40
ID
Continuous Source-Drain Diode Current
Unit
- 28a
- 4.3b, c
- 35
61
83
53
5.2b, c
3.3b, c
- 55 to 150
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
19
1.2
Maximum
24
1.5
Unit
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
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1
Si7489DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 100
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
5.5
-1
-3
V
± 100
nA
VDS = - 100 V, VGS = 0 V
-1
VDS = - 100 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≥ 5 V, VGS = - 10 V
RDS(on)
V
- 113
- 40
µA
A
VGS = - 10 V, ID = - 7.8 A
0.033
0.041
VGS = - 4.5 V, ID = - 7.3 A
0.038
0.047
VDS = - 15 V, ID = - 7.8 A
38
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
4600
VDS = - 50 V, VGS = 0 V, f = 1 MHz
230
VDS = - 50 V, VGS = - 10 V, ID = - 7.8 A
106
160
54
81
175
VDS = - 50 V, VGS = - 4.5 V, ID = - 7.8 A
VDD = - 50 V, RL = 8.1 Ω
ID ≅ - 6.2 A, VGEN = - 10 V, Rg = 1 Ω
Turn-On Delay Time
20
30
165
tf
100
150
td(on)
42
65
160
240
100
150
100
150
VDD = - 50 V, RL = 8.1 Ω
ID ≅ - 6.2 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
25
110
td(off)
Fall Time
nC
Ω
4
15
tr
Rise Time
Turn-Off Delay Time
14
26
f = 1 MHz
td(on)
Turn-On Delay Time
pF
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
TC = 25 °C
IS
- 28
ISM
- 40
IS = - 6.2 A
VSD
- 0.8
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
60
90
ns
Body Diode Reverse Recovery Charge
Qrr
150
225
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C
46
14
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
40
16
VGS = 10 thru 4 V
30
I D - Drain Current (A)
I D - Drain Current (A)
35
25
20
15
10
3V
12
8
TA = 125 °C
4
25 °C
5
2V
0
0.0
0.5
1.0
1.5
2.0
2.5
- 55 °C
0
0.0
3.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.042
3.0
3.5
7000
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
6000
0.040
VGS = 4.5 V
0.038
0.036
VGS = 10 V
5000
4000
3000
2000
Coss
0.034
1000
0.032
Crss
0
0
5
10
15
20
25
30
35
40
0
10
ID - Drain Current (A)
20
40
50
60
70
80
125
150
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.3
10
ID = 7.8 A
2.0
8
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
30
VDS = 50 V
6
VDS = 80 V
4
2
ID = 7.8 A
1.7
VGS = 10 V, 4.5 V
1.4
1.1
0.8
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
100
120
0.5
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
R DS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Current (A)
40
TJ = 150 °C
10
TJ = 25 °C
1
ID = 7.8 A
0.07
TA = 125 °C
0.06
0.05
0.04
TA = 25 °C
0.03
0.02
0.00
0.2
0.4
0.6
0.8
1.0
2
1.2
3
4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
35
2.2
30
ID = 250 µA
7
8
9
10
25
1.8
Power (W)
VGS(th) (V)
6
On-Resistance vs. Gate-to-Source Voltage
2.4
2.0
5
VGS - Gate-to-Source Voltage (V)
1.6
20
15
1.4
10
1.2
5
1.0
0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.01
175
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
10
Limited by
RDS(on)*
100 µs
I D - Drain Current (A)
1 ms
10 ms
1
100 ms
1s
0.1
10 s
DC
TA = 25 °C
Single Pulse
0.01
0.001
0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
35
100
30
80
Package Limited
Power (W)
ID - Drain Current (A)
25
20
15
60
40
10
20
5
0
0
0
25
50
75
100
125
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating
150
IC - Peak Avalanche Current (A)
100
10
TA =
L · IA
BV - V DD
1
0.000001
0.00001
0.0001
0.001
0.01
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
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5
Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-2
10-1
1
10
Square Wave Pulse Duration (s)
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73436.
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Document Number: 73436
S09-0271-Rev. C, 16-Feb-09
Package Information
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Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
E3
Backside View of Dual Pad
MILLIMETERS
DIM.
MIN.
A
0.97
A1
b
0.33
c
0.23
D
5.05
D1
4.80
D2
3.56
D3
1.32
D4
D5
E
6.05
E1
5.79
E2 (for AL product)
3.30
E2 (for other product)
3.48
E3
3.68
E4 (for AL product)
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
0.56
H
0.51
L
0.51
L1
0.06

0°
W
0.15
M
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
b
D2
INCHES
NOM.
MAX.
MIN.
NOM.
MAX.
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.48
3.66
3.78
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.137
0.144
0.149
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
1
0.246
0.236
0.144
0.151
0.154
0.028
0.028
0.008
12°
0.014
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
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15
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000